发表论文
(1) Silicon: quantum dot photovoltage triodes, NATURE COMMUNICATIONS, 2021, 第 13 作者(2) Graphene-induced positive shift of the flat band voltage in recessed gate AlGaN/GaN structures, APPLIED PHYSICS LETTERS, 2021, 第 8 作者(3) Optimized JFET regions of 4H-SiC VDMOS with reduced on-resistance and improved gate oxide reliability, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2020, 第 6 作者(4) 带有修调的分段曲率补偿带隙基准电路, Piecewise curvature compensated bandgap reference circuit with trimming procedure, 哈尔滨工业大学学报, 2020, 第 5 作者(5) PbS colloidal quantum dots patterning technique with low vertical leakage current for the photodetection applications, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2020, 第 9 作者(6) Plasma-enhanced atomic layer deposition of SiO2 for channel isolation of colloidal quantum dots phototransistors, SUPERLATTICES AND MICROSTRUCTURES, 2019, 第 9 作者(7) Corrigendum to "Effects of polycrystalline AlN film on the dynamic performance of AlGaN/GaN high electron mobility transistors" Mat. Des. 148(2018) 1–7, MATERIALS & DESIGN, 2019, 第11作者(8) 高阻硅基GaN晶片上MIS栅结构GaN HEMT射频器件研制, Research of MIS Gate GaN HEMT RF Devices on GaN Epitaxially-grown on High Resistance Si Substrate, 微波学报, 2019, 第 5 作者(9) Band alignment regulation of HfO2/SiC heterojunctions induced by PEALD with in situ NH3-plasma passivation, PHYSICS LETTERS A, 2019, 第 9 作者(10) 带有固定延迟时间的IGBT去饱和过流检测电路, IGBT DESAT Overcurrent Detection Circuit with Fixed Delay Time, 半导体技术, 2019, 第 5 作者(11) Ambipolar Graphene-Quantum Dot Phototransistors with CMOS Compatibility, ADVANCED OPTICAL MATERIALS, 2018, 其他(合作组作者)(12) 基于IGBT栅极米勒平台的新型电流过载检测技术, IGBT over-load detection technique via Miller plateau voltage monitoring, 仪器仪表学报, 2018, 第 5 作者(13) p-GaN在不同掩膜和刻蚀气体中的ICP刻蚀, Inductively Coupled Plasma Etching of p-GaN Using Different Masks and Etching Gases, 半导体技术, 2018, 第 7 作者(14) Enhanced interfacial and electrical characteristics of 4H-SiC MOS capacitor with lanthanum silicate passivation interlayer, APPLIED SURFACE SCIENCE, 2017, 第 10 作者(15) Performance Improvement and Current Collapse Suppression of Al2O3/AlGaN/GaN HEMTs Achieved by Fluorinated Graphene Passivation, IEEE ELECTRON DEVICE LETTERS, 2017, 第 9 作者(16) 退火温度对Au / Ti / 4H-SiC肖特基接触特性的影响, Effects of Annealing Temperature on the Characteristics of Au / Ti / 4H-SiC Schottky Contact, 半导体技术, 2017, 第 4 作者(17) Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3, RSC ADVANCES, 2017, 第 8 作者(18) Morphology improvement of SiC trench by inductively coupled plasma etching using Ni/Al2O3 bilayer mask, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017, 第 10 作者(19) Negative differential resistance in the I-V curves of Al2O3/AlGaN/GaN MIS structures, RSC ADVANCES, 2016, 第 9 作者(20) Semiconductor-like nanofilms assembled with AlN and TiN laminations for nearly ideal graphene-based heterojunction devices, JOURNAL OF MATERIALS CHEMISTRY C, 2016, 第 8 作者(21) 一种快速转换的过温保护电路, A Fast-Transition Over-Thermal Protection Circuit, 半导体技术, 2016, 第 3 作者(22) Controlled direct growth of Al2O3-doped HfO2 films on graphene by H2O-based atomic layer deposition, PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2015, 第 3 作者(23) Direct growth of sb2te3 on graphene by atomic layer deposition, RSC ADVANCES, 2015, 第 8 作者(24) Fluorinated graphene in interface engineering of ge-based nanoelectronics, ADVANCED FUNCTIONAL MATERIALS, 2015, 第 6 作者(25) Property transformation of graphene with Al2O3 films deposited directly by atomic layer deposition, APPLIED PHYSICS LETTERS, 2014, 第 6 作者(26) Al2O3-Gd2O3 double-films grown on graphene directly by H2O-assisted atomic layer deposition, RSC ADVANCES, 2014, 第 9 作者(27) Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2014, 第 9 作者(28) Experimental Investigation on Alloy Scattering in sSi/Si0.5Ge0.5/sSOI Quantum-Well p-MOSFET, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 第 7 作者(29) Effects of rapid thermal annealing on properties of HfAlO films directly deposited by ALD on graphene, MATERIALS LETTERS, 2014, 第 8 作者(30) Properties of HfO2/La2O3 nanolaminate films grown on an AlGaN/GaN heterostructure by plasma enhanced atomic layer deposition, RSC ADVANCES, 2014, 第 10 作者(31) Improvement of Al2O3 Films on Graphene Grown by Atomic Layer Deposition with Pre-H2O Treatment, ACS APPLIED MATERIALS & INTERFACES, 2014, 第 9 作者(32) Multi-Gates SOI LDMOS for Improved on-state Performance, 2014 IEEE 26TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD), 2014, 第 3 作者(33) PEALD HfO_2栅介质薄膜的界面优化及其特性表征, Interface Optimization and Characterization of PEALD HfO_2 Gate Dielectric Film, 半导体技术, 2013, 第 6 作者(34) Total-Dose Radiation Response of HfLaO Films Prepared by Plasma Enhanced Atomic Layer Deposition, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2013, 第 8 作者(35) ON-Resistance Degradation Induced by Hot-Carrier Injection in SOI SJ-LDMOS, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 第 6 作者(36) Characterization of HfO2/La2O3 layered stacking deposited on Si substrate, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2013, 第 7 作者(37) Competitive Si and La effect in HfO2 phase stabilization in multi-layer (La2O3)(0.08)(HfO2) films, APPLIED PHYSICS LETTERS, 2013, 第 3 作者(38) 采用水基原子层沉积工艺在石墨烯上沉积A12O3介质薄膜研究, Studies on H2O-based Atomic Layer Deposition of Al2O3 Dielectric on Pristine Graphene, 无机材料学报, 2012, 第 8 作者(39) Properties of a Ni-FUSI gate formed by the EBV method and one-step RTA, Properties of a Ni-FUSI gate formed by the EBV method and one-step RTA, JOURNAL OF SEMICONDUCTORS, 2012, 第 7 作者(40) 薄膜SOl上大于600 V LDMOS器件的研制, Study of LDMOS Device over 600 V on Thin Film SOI, 半导体技术, 2012, 第 6 作者(41) 薄膜SOI上大于600 V LDMOS器件的研制, 半导体技术, 2012, 第 6 作者(42) Plasma enhanced atomic layer deposition of HfO2 with in situ plasma treatment, MICROELECTRONIC ENGINEERING, 2012, 第 7 作者(43) Realization of 850 V breakdown voltage LDMOS on Simbond SOI, MICROELECTRONIC ENGINEERING, 2012, 第 6 作者(44) 基于SCR的SOI ESD保护器件研究, SCR based ESD protection in SOI technologies, 功能材料与器件学报, 2012, 第 7 作者(45) 采用水基原子层沉积工艺在石墨烯上沉积Al_2O_3介质薄膜研究, 无机材料学报, 2012, 第 8 作者(46) Al_2O_3对应变SiGe上HfO_2薄膜的热稳定性和电学可靠性的影响(英文), Effects of Al_2O_3 on Thermal Stability and Electrical Reliability of HfO_2 Film on Strained SiGe, 稀有金属材料与工程, 2011, 第 6 作者(47) Effects of Al2O3 on Thermal Stability and Electrical Reliability of HfO2 Film on Strained SiGeOriginal, XIYOU JINSHU CAILIAO YU GONGCHENG/RARE METAL MATERIALS AND ENGINEERING., 2011, 第 6 作者(48) 反转胶lift—Off工艺制备堆栈电感, Fabrication of stacked inductor by inversion photoresist lift - off process, 功能材料与器件学报, 2010, 第 6 作者(49) A novel GAAC FinFET transistor: device analysis, 3D TCAD simulation, and fabrication, A novel GAAC FinFET transistor: device analysis, 3D TCAD simulation, and fabrication, JOURNAL OF SEMICONDUCTORS, 2009, 第 4 作者(50) 一种新型混合晶向积累型圆柱体共包围栅互补金属氧化物场效应晶体管, A novel accumulation mode complementary GAAC FinFETs inverter with hybrid orientation SOl substrate, 科学通报, 2009, 第 7 作者(51) Engineering of interfacial layer between HfAl 2O 5 dielectric film and Si with a Ti-capping layer, THIN SOLID FILMS, 2008, 第 4 作者(52) 适用于按比例缩小至亚10nm的圆柱体全包围栅场效应管仿真(英文), 半导体学报, 2008, 第 5 作者(53) 适用于按比例缩小至亚10nm的圆柱体全包围栅场效应管仿真, Simulation of Gate-All-Around Cylindrical Transistors for Sub-10 Nanometer Scaling, 半导体学报, 2008, 第 5 作者(54) 适用于按比例缩小至亚10nm的圆柱体全包围栅场效应管仿真, Simulation of Gate-All-Around Cylindrical Transistors for Sub-10 Nanometer Scaling, 半导体学报, 2008, 第 5 作者(55) SOI LDMOS功率器件的研究与制备, Design and Fabrication of LDMOS Power Device on SOI Substrate, 微处理机, 2007, 第 4 作者(56) 氮元素对高k铪基介电薄膜总剂量抗辐射性能的影响研究, Effects of nitrogen element on total-dose irradiation response of high-k Hf-based dielectric films, 核技术, 2007, 第 5 作者(57) Effects of nitrogen element on total-dose irradiation response of high-k Hf-based dielectric films, HE JISHU/NUCLEAR TECHNIQUES, V 30, N 8, AUGUST, 2007, 2007, 第 5 作者(58) 适合基站放大器应用的图形化SOI LDMOSFET的设计与分析, A Novel LDMOS Power Amplifier in Patterned-SOI Technology for Base Station Applications, 温州师范学院学报, 2006, 第 4 作者(59) 离子束增强沉积法制备二氧化铪薄膜, Investigation of Hafnium Dioxide Film Synthesized by lon Beam Enhanced Deposition, 半导体技术, 2006, 第 2 作者(60) 利用改善的体连接技术制备SOILDMOSFET, Improved Body Contact Technology for SOI LDMOSFET Fabrication, 半导体技术, 2006, 第 3 作者(61) 高性能HfAlO介质薄膜的制备, Preparation of High-Quality Hf-Aluminate Films by EB-PVD, 稀有金属材料与工程, 2006, 第 3 作者(62) 适合基站放大器应用的图形化SOILDMOSFET的设计与分析, 温州师范学院学报(自然科学版), 2006, 第 4 作者(63) Characteristics of HfxSiyO films grown on Si0.8Ge0.2 layer by electron-beam evaporation, APPLIED PHYSICS LETTERS, 2006, (64) 新型PSOI LDMOSFET的结构优化, Optimization of PSOI LDMOSFET Structure, 半导体技术, 2006, 第 3 作者(65) CH4+Ar混合等离子体注入新工艺, 压电与声光, 2005, 第 2 作者(66) 高性能图形化SOI功率器件的研制, Fabrication of high performance patterned SO1 power device, 功能材料与器件学报, 2005, 第 4 作者(67) 高温碳离子注入形成碳化硅埋层的结构研究, 功能材料与器件学报, 2004, 第 2 作者(68) 新型图形化 SOI LDMOS结构的性能分析(英文), 半导体学报, 2004, 第 4 作者(69) 在SOI材料上制备高质量的氧化铪薄膜, 功能材料, 2004, 第 3 作者(70) 新型图形化SOI LDMOS结构的性能分析, 半导体学报, 2004, 第 4 作者(71) 用IBED方法在SOI上制备高质量的氧化铪薄膜, 第十三届全国半导体集成电路、硅材料学术会论文集, 2003, 第 3 作者(72) 电绝缘用ta-C薄膜的微观结构与电学特性, 功能材料与器件学报, 2003, 第 2 作者(73) Ge—SiO2薄膜的结构及其发光特性的研究, 功能材料与器件学报, 2002, 第 5 作者(74) 低剂量SOI圆片的无损电学表征测试, 功能材料与器件学报, 2002, 第 2 作者(75) Tetrahedral amorphous-carbon thin films for silicon-on-insulator application, APPLIED PHYSICS LETTERS, 2002, (76) 硅基氧化物薄膜的结构及光吸收特性的研究, 功能材料, 2002, 第 6 作者(77) 退火温度对Ge-SiO_2簿膜的结构和发光特性的影响, 第四届中国功能材料及其应用学术会议论文集, 2001, 第 5 作者(78) 铝掺杂对硅基薄膜电致发光的影响, 科学通报, 2001, 第 4 作者(79) OPTICAL PROBING OF FREE-CARRIER PLASMA EFFECTS OF MEV ION-IMPLANTED SILICON, CHINESE PHYSICS LETTERS, 1995, 通讯作者(80) 高能离子注入硅形成导电埋层的光学表征, 中国科学(A辑 数学 物理学 天文学 技术科学), 1994, 第 1 作者(81) 氧离子和氮离子共注人硅形成绝缘埋层的微观结构及其光学性质, 电子科学学刊, 1991, 第 1 作者(82) 氧离子和氮离子共注入硅形成SOI结构的俄歇能谱研究, 半导体学报, 1991, 第 1 作者(83) SIMNI和SIMOX多层结构及其光学性质的研究, 中国科学(A辑 数学 物理学 天文学 技术科学), 1990, 第 2 作者