基本信息
蔡勇  男  博导  中国科学院苏州纳米技术与纳米仿生研究所
email: Ycai2008@sinano.ac.cn
address: 苏州工业园区独墅湖高教区若水路398号
postalCode: 215125

招生信息

   
招生专业
080903-微电子学与固体电子学
085400-电子信息
招生方向
宽禁带半导体器件
高频器件

教育背景

1998-09--2003-07   北京大学   理学博士
1989-09--1993-07   东南大学   工学学士

工作经历

   
工作简历
2008-12~现在, 中国科学院苏州纳米技术与纳米仿生研究所, 研究员
2006-08~2008-11,香港应用科技研究院, 经理
2003-07~2006-07,香港科技大学, 博士后
1998-09~2003-07,北京大学, 理学博士
1993-08~1998-08,南京电子器件研究所, 助理工程师
1989-09~1993-07,东南大学, 工学学士

出版信息

   
发表论文
(1) High Temperature Characteristics of GaN-based Inverter Integrated with Enhancement-mode (E-mode) MOSFET and Depletion-mode (D-mode) HEMT, IEEE Electron Device Lett., 2014, 通讯作者
(2) 300°C operation of normally-off AlGaN/GaN MOSFET with low leakage current and high on/off current ratio, IET Electronics Letters, 2014, 通讯作者
(3) Yield analysis of large-area high-power single-chip GaN-based light-emitting diodes with network design, Physica Status Solidi(RRL), 2014, 通讯作者
(4) Single-chip InGaN Green Light-emitting diodes with 3W optical output power,  IET Electronics Letters, 2014, 通讯作者
(5) Double-Gate AlGaN/GaN HEMT with improved Dynamic Performance, IEEE Electron Device Lett., 2013, 通讯作者
(6) Electrical and Optical Properties of a High-Voltage Large Area Blue Light-Emitting Diode, Japanese Journal of Applied Physics, 2013, 通讯作者
(7) 5.3A/400V normally-off AlGaN/GaN-on-Si MOS-HEMT with High threshold voltage and large gate swing, IEE Electronics Letters, 2013, 通讯作者
(8) Dynamic Characterizations of AlGaN/GaN HEMTs with Field-plates using a Double-gate Structure, IEEE Electron Device Lett., 2013, 通讯作者
(9) High-responsivity, low-noise, room-temperature, self-mixing terahertz detector realized using floating antennas on a GaN-based field-effect transistor, APPLIED PHYSICS LETTERS, 2012, 第 4 作者
(10) Enhancement-Mode Operation of Nano-Channel Array (NCA) AlGaN/GaN HEMTs, IEEE Electron Device Lett., 2012, 通讯作者
(11) Enhancement-Mode InAlN/GaN MISHEMT with Low Gate Leakage Current, Journal of Semiconductors, 2012, 通讯作者
(12) ICP刻蚀GaN侧壁倾角的控制, 固体电子研究与进展, 2012, 通讯作者
(13) Probing and modelling the localized self-mixing in a GaN/AlGaN field-effect terahertz detector, APPLIED PHYSICS LETTERS, 2012, 通讯作者
(14) Low-Temperature ZnO TFTs Fabricated by Reactive Sputtering of Metallic Zinc Target, Electron Device, IEEE Transactions on, 2012, 第 2 作者
(15) Threshold Voltage’s Dependence on Channel Width in Nano-Channel Array AlGaN/GaN HEMTs, physica status solidi (c), 2011, 通讯作者
(16) Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using a Nano-Channel Array Structure, 中国物理快报, 2011, 通讯作者
(17) Analysis on the new mechanisms of low resistance stacked Ti/Al Ohmic contact structure on AlGaN/GaN HEMTs, JOURNAL OF PHYSICS D: APPLIED PHYSICS, 2010, 通讯作者
(18) Temperature Dependence and Thermal Stability of Planar-Integrated Enhancement/Depletion-mode AlGaN/GaN HEMTs and Digital Circuits, Solid State Electronics, 2009, 第 2 作者
(19) Fabrication of Large-area Suspended MEMS Structures Using GaN-on-Si Platform, IEEE Electron Device Lett, 2009, 第 4 作者
(20) Chemical Vapor Deposition of Diamond Films on Patterned GaN Substate via a Thin Silicon Nitride Protective Layer, Crystal Growth and Design, 2008, 通讯作者
(21) Integration of Enhancement and Depletion-mode AlGaN/GaN MIS-HFETs by Fluoride-based Plasma Treatment, Phys. Stat. Sol. (a), 2007, 第 2 作者
(22) 1.9-GHz Low Noise Amplifier Using High-Linearity and Low-Noise Composite-Channel HEMTs, Microwave and Optical Technology Lett, 2007, 第 2 作者
(23) High Temperature Operation of AlGaN/GaN HEMTs Direct-Coupled FET Logic (DCFL) Integrated Circuits, IEEE Electron Device Lett, 2007, 第 1 作者
(24) Device Isolation by Plasma Treatment for Planar Integration of Enhancement/Depletion-Mode AlGaN/GaN High Electron Mobility Transistors, Jpn J. Appl. Phys, 2007, 第 2 作者
(25) A Low Phase-Noise X-Band MMIC VCO Using High-Linearity and Low-Noise Composite-Channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs, IEEE Trans. Microwave Theory and Techniques, 2007, 第 2 作者
(26) DC and RF Characteristics of AlGaN/GaN/InGaN/GaN Double-Heterojunction HEMTs, IEEE Trans. Electron Devices, 2007, 第 4 作者
(27) Enhancement-Mode Si3N4/AlGaN/GaN MISHFETs,  IEEE Electron Device Letters, 2007, 第 2 作者
(28) Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-based Plasma Treatment: From Depletion Mode to Enhancemend Mode, IEEE Trans. Electron Devices, 2006, 第 1 作者
(29) Planar Integration of E/D-Mode AlGaN/GaN HEMTs Using Fluoride-Based Plasma Treatment, IEEE Electron Device Letters, 2006, 第 2 作者
(30) Monolithically Integrated Enhancement/Depletion-Mode AlGaN/GaN HEMT Inverters and Ring Oscillators Using CF4 Plasma Treatment, IEEE Trans. Electron Devices, 2006, 第 1 作者
(31) Enhancement-Mode AlGaN/GaN HEMTs on Silicon Substrate, IEEE Trans. on Electron Devices, 2006, 第 2 作者
(32) High-Performance Enhancement-Mode AlGaN/GaN HEMTs using Fluoride-based Plasma Treatment, IEEE Electron Device Letters, 2005, 第 1 作者
(33) III-Nitride Metal-Insulator-Semiconductor Heterojunction Field-Effect Transistors Using Sputtered AlON Thin Films, Appl. Phys. Lett, 2005, 第 1 作者

科研活动

   
科研项目
( 1 ) GaN电力电子器件研究, 负责人, 研究所自主部署, 2011-04--2013-10
( 2 ) 新一代功率器件氮化镓复合材料外延技术研发, 负责人, 地方任务, 2012-05--2014-05
参与会议
(1)High voltage single chip blue LED with 10W light output power   1. Wei Wang, Yong Cai, Hong-juan Huang, Wei Huang, Hai-ou Li, Bao-shun Zhang   2013-05-12
(2)提高AlGaN/GaN HEMT 关态击穿电压的纳米沟道阵列结构   第十七届全国化合物半导体材料、微波器件和光电器件学术会议   3. 顾国栋,蔡勇,冯志红,王越,于国浩,董志华,曾春红,张宝顺   2012-11-12
(3)栅源场板AlGaN/GaN-HEMT动态特性分析   第十七届全国化合物半导体材料、微波器件和光电器件学术会议   2. 于国浩,王越,曾春红,董志华,蔡勇,张宝顺,   2012-11-12
(4)Electrical and Optical Properties of a Large Area Blue Light Emitting Diode   4. Wei Wang, Yong Cai, Wei Huang, Hai Ou Li, and Bao Shun Zhang   2012-10-14
(5)4W light Output Single Chip Blue Light Emitting Diode (LED)   5. WANG Wei, CAI Yong, ZHANG Bao-shun, Huang Wei, Li Hai-ou   2012-07-22
(6)402V/5.3A常关型Si衬底AlGaN/GaN功率开关器件   2012年全国半导体器件技术、产业发展研讨会   6. 董志华,谭庶欣,蔡勇,于国浩,王越,陈洪维,刘胜厚,赵德胜,候克玉,曾春红,薛璐,徐吉程,陈敬,张宝顺   2012-07-10
(7)关态耐压1000V的AlGaN/GaN HEMT器件   2012年全国半导体器件技术、产业发展研讨会   7. 于国浩,蔡勇,王越,董志华,顾国栋,杨霏,冯志红,张宝顺   2012-07-10
(8)超大功率蓝光LED热性能分析   2012年全国半导体器件技术、产业发展研讨会   王玮,蔡勇,黄伟,李海鸥,张宝顺   2012-07-10
(9)CHARACTERIZATION OF GAN CANTILEVERS FABRICATED WITHGAN-ON-SILICON PLATFORM   1、J.N. Lv, Z.C. Yang, G.Z. Yan, Y. Cai, B.S. Zhang, and K.J. Chen   2011-01-23
(10)Monolithic Integration of Enhancement- and Depletion-mode AlGaN/GaN HEMTs for GaN Digital Integrated Circuits   Y. Cai, Z. Cheng, C. W. Tang, K. J. Chen, and K. M. Lau   2005-12-04
(11)Al0.3Ga0.7N/Al0.05Ga0.95N/GaN Composite-Channel HEMTs with Enhanced Linearity   19、J. Liu, Y. G. Zhou, R. M. Chu, Y. Cai, K. J. Chen, and K. M. Lau   2004-12-13