基本信息
蔡勇 男 博导 中国科学院苏州纳米技术与纳米仿生研究所
email: Ycai2008@sinano.ac.cn
address: 苏州工业园区独墅湖高教区若水路398号
postalCode: 215125
email: Ycai2008@sinano.ac.cn
address: 苏州工业园区独墅湖高教区若水路398号
postalCode: 215125
招生信息
招生专业
080903-微电子学与固体电子学085400-电子信息
招生方向
宽禁带半导体器件高频器件
教育背景
1998-09--2003-07 北京大学 理学博士1989-09--1993-07 东南大学 工学学士
工作经历
工作简历
2008-12~现在, 中国科学院苏州纳米技术与纳米仿生研究所, 研究员2006-08~2008-11,香港应用科技研究院, 经理2003-07~2006-07,香港科技大学, 博士后1998-09~2003-07,北京大学, 理学博士1993-08~1998-08,南京电子器件研究所, 助理工程师1989-09~1993-07,东南大学, 工学学士
出版信息
发表论文
(1) High Temperature Characteristics of GaN-based Inverter Integrated with Enhancement-mode (E-mode) MOSFET and Depletion-mode (D-mode) HEMT, IEEE Electron Device Lett., 2014, 通讯作者(2) 300°C operation of normally-off AlGaN/GaN MOSFET with low leakage current and high on/off current ratio, IET Electronics Letters, 2014, 通讯作者(3) Yield analysis of large-area high-power single-chip GaN-based light-emitting diodes with network design, Physica Status Solidi(RRL), 2014, 通讯作者(4) Single-chip InGaN Green Light-emitting diodes with 3W optical output power, IET Electronics Letters, 2014, 通讯作者(5) Double-Gate AlGaN/GaN HEMT with improved Dynamic Performance, IEEE Electron Device Lett., 2013, 通讯作者(6) Electrical and Optical Properties of a High-Voltage Large Area Blue Light-Emitting Diode, Japanese Journal of Applied Physics, 2013, 通讯作者(7) 5.3A/400V normally-off AlGaN/GaN-on-Si MOS-HEMT with High threshold voltage and large gate swing, IEE Electronics Letters, 2013, 通讯作者(8) Dynamic Characterizations of AlGaN/GaN HEMTs with Field-plates using a Double-gate Structure, IEEE Electron Device Lett., 2013, 通讯作者(9) High-responsivity, low-noise, room-temperature, self-mixing terahertz detector realized using floating antennas on a GaN-based field-effect transistor, APPLIED PHYSICS LETTERS, 2012, 第 4 作者(10) Enhancement-Mode Operation of Nano-Channel Array (NCA) AlGaN/GaN HEMTs, IEEE Electron Device Lett., 2012, 通讯作者(11) Enhancement-Mode InAlN/GaN MISHEMT with Low Gate Leakage Current, Journal of Semiconductors, 2012, 通讯作者(12) ICP刻蚀GaN侧壁倾角的控制, 固体电子研究与进展, 2012, 通讯作者(13) Probing and modelling the localized self-mixing in a GaN/AlGaN field-effect terahertz detector, APPLIED PHYSICS LETTERS, 2012, 通讯作者(14) Low-Temperature ZnO TFTs Fabricated by Reactive Sputtering of Metallic Zinc Target, Electron Device, IEEE Transactions on, 2012, 第 2 作者(15) Threshold Voltage’s Dependence on Channel Width in Nano-Channel Array AlGaN/GaN HEMTs, physica status solidi (c), 2011, 通讯作者(16) Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using a Nano-Channel Array Structure, 中国物理快报, 2011, 通讯作者(17) Analysis on the new mechanisms of low resistance stacked Ti/Al Ohmic contact structure on AlGaN/GaN HEMTs, JOURNAL OF PHYSICS D: APPLIED PHYSICS, 2010, 通讯作者(18) Temperature Dependence and Thermal Stability of Planar-Integrated Enhancement/Depletion-mode AlGaN/GaN HEMTs and Digital Circuits, Solid State Electronics, 2009, 第 2 作者(19) Fabrication of Large-area Suspended MEMS Structures Using GaN-on-Si Platform, IEEE Electron Device Lett, 2009, 第 4 作者(20) Chemical Vapor Deposition of Diamond Films on Patterned GaN Substate via a Thin Silicon Nitride Protective Layer, Crystal Growth and Design, 2008, 通讯作者(21) Integration of Enhancement and Depletion-mode AlGaN/GaN MIS-HFETs by Fluoride-based Plasma Treatment, Phys. Stat. Sol. (a), 2007, 第 2 作者(22) 1.9-GHz Low Noise Amplifier Using High-Linearity and Low-Noise Composite-Channel HEMTs, Microwave and Optical Technology Lett, 2007, 第 2 作者(23) High Temperature Operation of AlGaN/GaN HEMTs Direct-Coupled FET Logic (DCFL) Integrated Circuits, IEEE Electron Device Lett, 2007, 第 1 作者(24) Device Isolation by Plasma Treatment for Planar Integration of Enhancement/Depletion-Mode AlGaN/GaN High Electron Mobility Transistors, Jpn J. Appl. Phys, 2007, 第 2 作者(25) A Low Phase-Noise X-Band MMIC VCO Using High-Linearity and Low-Noise Composite-Channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs, IEEE Trans. Microwave Theory and Techniques, 2007, 第 2 作者(26) DC and RF Characteristics of AlGaN/GaN/InGaN/GaN Double-Heterojunction HEMTs, IEEE Trans. Electron Devices, 2007, 第 4 作者(27) Enhancement-Mode Si3N4/AlGaN/GaN MISHFETs, IEEE Electron Device Letters, 2007, 第 2 作者(28) Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-based Plasma Treatment: From Depletion Mode to Enhancemend Mode, IEEE Trans. Electron Devices, 2006, 第 1 作者(29) Planar Integration of E/D-Mode AlGaN/GaN HEMTs Using Fluoride-Based Plasma Treatment, IEEE Electron Device Letters, 2006, 第 2 作者(30) Monolithically Integrated Enhancement/Depletion-Mode AlGaN/GaN HEMT Inverters and Ring Oscillators Using CF4 Plasma Treatment, IEEE Trans. Electron Devices, 2006, 第 1 作者(31) Enhancement-Mode AlGaN/GaN HEMTs on Silicon Substrate, IEEE Trans. on Electron Devices, 2006, 第 2 作者(32) High-Performance Enhancement-Mode AlGaN/GaN HEMTs using Fluoride-based Plasma Treatment, IEEE Electron Device Letters, 2005, 第 1 作者(33) III-Nitride Metal-Insulator-Semiconductor Heterojunction Field-Effect Transistors Using Sputtered AlON Thin Films, Appl. Phys. Lett, 2005, 第 1 作者
科研活动
科研项目
( 1 ) GaN电力电子器件研究, 负责人, 研究所自主部署, 2011-04--2013-10( 2 ) 新一代功率器件氮化镓复合材料外延技术研发, 负责人, 地方任务, 2012-05--2014-05
参与会议
(1)High voltage single chip blue LED with 10W light output power 1. Wei Wang, Yong Cai, Hong-juan Huang, Wei Huang, Hai-ou Li, Bao-shun Zhang 2013-05-12(2)提高AlGaN/GaN HEMT 关态击穿电压的纳米沟道阵列结构 第十七届全国化合物半导体材料、微波器件和光电器件学术会议 3. 顾国栋,蔡勇,冯志红,王越,于国浩,董志华,曾春红,张宝顺 2012-11-12(3)栅源场板AlGaN/GaN-HEMT动态特性分析 第十七届全国化合物半导体材料、微波器件和光电器件学术会议 2. 于国浩,王越,曾春红,董志华,蔡勇,张宝顺, 2012-11-12(4)Electrical and Optical Properties of a Large Area Blue Light Emitting Diode 4. Wei Wang, Yong Cai, Wei Huang, Hai Ou Li, and Bao Shun Zhang 2012-10-14(5)4W light Output Single Chip Blue Light Emitting Diode (LED) 5. WANG Wei, CAI Yong, ZHANG Bao-shun, Huang Wei, Li Hai-ou 2012-07-22(6)402V/5.3A常关型Si衬底AlGaN/GaN功率开关器件 2012年全国半导体器件技术、产业发展研讨会 6. 董志华,谭庶欣,蔡勇,于国浩,王越,陈洪维,刘胜厚,赵德胜,候克玉,曾春红,薛璐,徐吉程,陈敬,张宝顺 2012-07-10(7)关态耐压1000V的AlGaN/GaN HEMT器件 2012年全国半导体器件技术、产业发展研讨会 7. 于国浩,蔡勇,王越,董志华,顾国栋,杨霏,冯志红,张宝顺 2012-07-10(8)超大功率蓝光LED热性能分析 2012年全国半导体器件技术、产业发展研讨会 王玮,蔡勇,黄伟,李海鸥,张宝顺 2012-07-10(9)CHARACTERIZATION OF GAN CANTILEVERS FABRICATED WITHGAN-ON-SILICON PLATFORM 1、J.N. Lv, Z.C. Yang, G.Z. Yan, Y. Cai, B.S. Zhang, and K.J. Chen 2011-01-23(10)Monolithic Integration of Enhancement- and Depletion-mode AlGaN/GaN HEMTs for GaN Digital Integrated Circuits Y. Cai, Z. Cheng, C. W. Tang, K. J. Chen, and K. M. Lau 2005-12-04(11)Al0.3Ga0.7N/Al0.05Ga0.95N/GaN Composite-Channel HEMTs with Enhanced Linearity 19、J. Liu, Y. G. Zhou, R. M. Chu, Y. Cai, K. J. Chen, and K. M. Lau 2004-12-13