基本信息
徐应强  男  博导  中国科学院半导体研究所
电子邮件: yingqxu@semi.ac.cn
通信地址: 北京市海淀区清华东路甲35号
邮政编码: 100083

招生信息

   
招生专业
080903-微电子学与固体电子学
招生方向


专利与奖励

   
专利成果
[1] 林芳祁, 牛智川, 徐应强, 王国伟, 李农, 周文广, 蒋洞微, 蒋俊锴, 常发冉, 陈伟强, 李勇. 双色异质结光电晶体管及其制备方法. CN: CN114335232B, 2023-04-14.
[2] 周文广, 牛智川, 徐应强, 王国伟, 蒋洞微, 吴东海, 蒋俊锴, 常发冉, 李农, 林芳祁, 崔素宁, 陈伟强. 一种短波双色红外探测器及其制备方法. CN: CN114122185B, 2023-02-17.
[3] 蒋俊锴, 牛智川, 徐应强, 王国伟, 蒋洞微, 常发冉, 李勇, 崔素宁, 陈伟强. 周期渐变超晶格宽光谱红外探测器及其制备方法. CN: CN114582996A, 2022-06-03.
[4] 崔素宁, 牛智川, 蒋洞微, 王国伟, 徐应强, 吴东海, 郝宏玥, 陈伟强, 蒋俊锴. 近-远红外宽光谱超晶格探测器. CN: CN114464632A, 2022-05-10.
[5] 崔素宁, 牛智川, 蒋洞微, 王国伟, 徐应强, 吴东海, 郝宏玥, 陈伟强, 蒋俊锴. 近-远红外宽光谱超晶格探测器. CN: CN114464632A, 2022-05-10.
[6] 林芳祁, 牛智川, 徐应强, 王国伟, 李农, 周文广, 蒋洞微, 蒋俊锴, 常发冉, 陈伟强, 李勇. 双色异质结光电晶体管及其制备方法. CN: CN114335232A, 2022-04-12.
[7] 周文广, 牛智川, 徐应强, 王国伟, 蒋洞微, 吴东海, 蒋俊锴, 常发冉, 李农, 林芳祁, 崔素宁, 陈伟强. 一种短波双色红外探测器及其制备方法. CN: CN114122185A, 2022-03-01.
[8] 周文广, 牛智川, 徐应强, 王国伟, 蒋洞微. 红外探测器及其制备方法. CN: CN113972296A, 2022-01-25.
[9] 王天放, 牛智川, 杨成奥, 张宇, 徐应强, 陈益航, 张一, 尚金铭, 刘冰. 多波长集成单模激光种子源. CN: CN113540973A, 2021-10-22.
[10] 郝宏玥, 牛智川, 徐应强, 王国伟, 蒋洞微. 一种红外探测器及其制备方法. CN: CN113488558A, 2021-10-08.
[11] 牛智川, 李农, 刘冰, 徐应强, 王国伟, 蒋洞微, 吴东海, 郝宏玥, 赵有文, 朱小贵, 何胜. 在GaSb衬底上生长InAs层的生长速度测定方法. CN: CN113358677A, 2021-09-07.
[12] 郝宏玥, 徐应强, 牛智川, 王国伟, 蒋洞微. 焦平面红外探测器芯片、探测器和制备方法. CN: CN113130676A, 2021-07-16.
[13] 陈伟强, 牛智川, 蒋洞微, 崔素宁, 李勇, 蒋俊锴, 王国伟, 徐应强. 利用钝化层负电化抑制侧壁漏电流的探测器的制备方法. CN: CN113113511A, 2021-07-13.
[14] 崔素宁, 蒋洞微, 李勇, 陈伟强, 蒋俊锴, 王国伟, 徐应强, 牛智川. 互补势垒超晶格长波红外探测器. CN: CN113035992A, 2021-06-25.
[15] 郝宏玥, 徐应强, 牛智川, 王国伟, 蒋洞微. GaSb焦平面红外探测器的制备方法及GaSb焦平面红外探测器. CN: CN113013289A, 2021-06-22.
[16] 何小武, 牛智川, 张宇, 徐应强, 陈昊, 孙宝权, 窦秀明, 尚向军, 倪海桥, 任正伟, 刘汗青. 量子点单光子源、制备方法及其器件的制备方法. CN: CN111525005B, 2021-06-18.
[17] 张一, 牛智川, 张宇, 徐应强, 杨成奥, 谢圣文, 邵福会, 尚金铭. 一种中红外锑化物量子级联激光器及其制备方法. CN: CN111431033B, 2021-04-09.
[18] 张一, 牛智川, 张宇, 徐应强, 杨成奥, 谢圣文, 邵福会, 尚金铭. 一种中红外波长全覆盖可调谐光模块. CN: CN111244757B, 2021-03-05.
[19] 张一, 牛智川, 张宇, 徐应强, 杨成奥, 谢圣文, 邵福会, 尚金铭. 单片集成级联量子阱宽调谐中红外激光器及制备方法. CN: CN112366514A, 2021-02-12.
[20] 杨成奥, 牛智川, 张宇, 徐应强, 谢圣文, 张一, 尚金铭, 黄书山, 袁野, 苏向斌, 邵福会. 单片集成双波长半导体激光器及其制备方法. CN: CN111276867B, 2021-01-29.
[21] 张一, 牛智川, 张宇, 徐应强, 杨成奥, 谢圣文, 邵福会, 尚金铭. 中红外超晶格带间跃迁激光器及其制备方法. CN: CN108988125B, 2020-04-21.
[22] 蒋志, 牛智川, 徐应强, 王国伟, 蒋洞微, 孙姚耀, 郭春妍, 贾庆轩, 常发冉. 基于锑化物的可见光-中红外探测器及其制备方法. CN: CN108899379B, 2019-10-25.
[23] 向伟, 王国伟, 徐应强, 郝宏玥, 蒋洞微, 任正伟, 贺振宏, 牛智川. 一种雪崩光电二极管及其制作方法. CN: CN110190148A, 2019-08-30.
[24] 郭春妍, 魏思航, 蒋洞微, 王国伟, 徐应强, 汪韬, 牛智川. 红外探测器光陷阱结构的制备方法. CN: CN109802004A, 2019-05-24.
[25] 杨成奥, 牛智川, 张宇, 徐应强, 谢圣文, 张一, 尚金铭. 片上集成半导体激光器结构及其制备方法. CN: CN109586159A, 2019-04-05.
[26] 郭春妍, 孙姚耀, 蒋志, 郝宏玥, 吕粤希, 王国伟, 徐应强, 汪韬, 牛智川. 可见光拓展的中波红外探测器单元器件及其制备方法. CN: CN109524499A, 2019-03-26.
[27] 谢圣文, 牛智川, 张宇, 徐应强, 邵福会, 杨成奥, 张一, 尚金铭, 黄书山, 袁野, 苏向斌. 基于数字合金势垒的量子阱结构、外延结构及其制备方法. CN: CN109217109A, 2019-01-15.
[28] 张一, 牛智川, 张宇, 徐应强, 杨成奥, 谢圣文, 邵福会, 尚金铭. 渐变掺杂宽波导带间级联激光器及其制备方法. CN: CN109149368A, 2019-01-04.
[29] 蒋志, 牛智川, 徐应强, 王国伟, 蒋洞微, 孙姚耀, 郭春妍, 贾庆轩, 常发冉. 基于锑化物的可见光-中红外探测器及其制备方法. CN: CN108899379A, 2018-11-27.
[30] 蒋志, 牛智川, 王国伟, 徐应强, 孙姚耀, 韩玺, 蒋洞微. 一种分子束外延生长长波红外超晶格界面的优化方法. CN: CN108648987A, 2018-10-12.
[31] 吕粤希, 孙姚耀, 郭春妍, 王国伟, 徐应强, 牛智川. 基于AlInAsSb体材料作倍增区的雪崩光电二极管及其制备方法. CN: CN107170847A, 2017-09-15.
[32] 杨成奥, 张宇, 廖永平, 徐应强, 牛智川. 单模GaSb基半导体激光器及其制备方法. CN: CN106953235A, 2017-07-14.
[33] 向伟, 王国伟, 徐应强",null,"蒋洞微",null,null,"牛智川. 一种雪崩光电二极管及其制作方法. CN: CN104465853B, 2017-01-11.
[34] 孙姚耀, 韩玺, 王国伟, 徐应强, 牛智川. 铟砷锑和铟镓砷锑双波段红外探测器及制备方法. CN: CN106298993A, 2017-01-04.
[35] 廖永平, 张宇, 魏思航, 郝宏玥, 徐应强, 牛智川. 一种大功率1.8‑4μm半导体激光器及其制备方法. CN: CN106300015A, 2017-01-04.
[36] 郝宏玥, 徐应强, 王国伟, 向伟, 韩玺, 蒋洞微, 牛智川. InAs/GaSb超晶格光子晶体红外探测器及其制备方法. CN: CN106024931A, 2016-10-12.
[37] 韩玺, 徐应强, 王国伟, 向伟, 郝宏玥, 牛智川. 一种双通道宽光谱探测器及其制备方法. CN: CN105957918A, 2016-09-21.
[38] 向伟, 王国伟, 徐应强, 郝宏玥, 韩玺, 任正伟, 贺振宏, 牛智川. 单势垒型InGaAsSb红外探测器. CN: CN105932092A, 2016-09-07.
[39] 杨成奥, 张宇, 廖永平, 魏思航, 徐应强, 牛智川. 一种半导体激光器及其制备方法. 中国: CN105161976A, 2015-12-16.
[40] 杨成奥, 张宇, 廖永平, 徐应强, 牛智川. 一种集成半导体激光器的制备方法. CN: CN105098595A, 2015-11-25.
[41] 张立春, 王国伟, 张宇, 徐应强, 倪海桥, 牛智川. 一种高电阻温度系数氧化钒薄膜的制备方法. CN: CN104611670A, 2015-05-13.
[42] 向伟, 王国伟, 徐应强",null,"蒋洞微",null,null,"牛智川. 一种雪崩光电二极管及其制作方法. CN: CN104465853A, 2015-03-25.
[43] 郝宏玥, 王国伟, 向伟, 蒋洞微, 邢军亮, 徐应强, 牛智川. 一种半导体光电器件的表面钝化方法. CN: CN104409525A, 2015-03-11.
[44] 蒋洞微, 向伟, 王娟, 邢军亮, 王国伟, 徐应强, 任正伟, 贺振宏, 牛智川. InAs/GaSb超晶格红外光电探测器及其制备方法. CN: CN103887360A, 2014-06-25.
[45] 邢军亮, 张宇, 徐应强, 王国伟, 王娟, 向伟, 任正伟, 牛智川. 带间级联激光器及其制备方法. CN: CN103579904A, 2014-02-12.
[46] 张宇, 邢军亮, 徐应强, 任正伟, 牛智川. 一种具有W型有源区结构的带间级联激光器. CN: CN103545713A, 2014-01-29.
[47] 邢军亮, 张宇, 徐应强, 王国伟, 王娟, 向伟, 任正伟, 牛智川. InSb/GaSb量子点结构器件及生长方法. CN: CN103441181A, 2013-12-11.
[48] 倪海桥, 丁颖, 徐应强, 李密锋, 喻颖, 査国伟, 徐建新, 牛智川. 基于半导体超短脉冲激光器的太赫兹源设备. CN: CN103368042A, 2013-10-23.
[49] 邢军亮, 张宇, 王国伟, 王娟, 王丽娟, 任正伟, 徐应强, 牛智川. 双波长锑化物应变量子阱半导体激光器及其制备方法. CN: CN103078252A, 2013-05-01.
[50] 贺继方, 尚向军, 倪海桥, 王海莉, 李密峰, 朱岩, 王莉娟, 喻颖, 贺正宏, 徐应强, 牛智川. 在衬底上生长异变缓冲层的方法. CN: CN102194671A, 2011-09-21.
[51] 迂修, 张宇, 王国伟, 徐应强, 徐云, 宋国峰. “W”型锑化物二类量子阱的外延生长方法. CN: CN102157903A, 2011-08-17.
[52] 张宇, 王国伟, 汤宝, 任正伟, 徐应强, 牛智川, 陈良惠. HPT结构的InAs/GaSb超晶格红外光电探测器. CN: CN101814545A, 2010-08-25.
[53] 王国伟, 汤宝, 周志强, 任正伟, 徐应强, 牛智川. 一种InAs/GaSb超晶格红外光电探测器及其制作方法. CN: CN101777601A, 2010-07-14.
[54] 汤宝, 周志强, 郝瑞亭, 任正伟, 徐应强, 牛智川. GaAs基InAs/GaSb超晶格近红外光电探测器及其制作方法. CN: CN101576413A, 2009-11-11.
[55] 周志强, 郝瑞亭, 汤 宝, 任正伟, 徐应强, 牛智川. GaAs基InAs/GaSb超晶格红外光电探测器及其制作方法. CN: CN101562210A, 2009-10-21.
[56] 郝瑞亭, 周志强, 任正伟, 徐应强, 牛智川. 一种在砷化镓衬底上外延生长锑化镓的方法. CN: CN101207022A, 2008-06-25.
[57] 郝瑞亭, 周志强, 任正伟, 徐应强, 牛智川. 一种在砷化镓衬底上外延生长锑化镓的方法. CN: CN101148776A, 2008-03-26.
[58] 牛智川, 倪海桥, 徐晓华, 徐应强, 张纬, 韩勤, 吴荣汉. 气态束源炉瞬态开关控制真空装置. CN: CN1255572C, 2006-05-10.
[59] 牛智川, 徐晓华, 倪海桥, 徐应强, 韩勤, 吴荣汉. 高铟组分镓砷/铟镓砷量子阱结构及其制备方法. CN: CN1624996A, 2005-06-08.

出版信息

   
发表论文
[1] Wang, Tianfang, Yang, Chengao, Chen, Yihang, Shi, Jianmei, Yu, Hongguang, Su, Xiangbin, Zhang, Yu, Zhao, Youwen, Tong, Cunzhu, Wu, Donghai, Xu, Yingqiang, Ni, Haiqiao, Niu, Zhichuan. High power GaSb-based superluminescent diode with cascade cavity suppression waveguide geometry and ultra-low antireflection coating. APPLIED PHYSICS LETTERS[J]. 2023, 123(2): http://dx.doi.org/10.1063/5.0157235.
[2] Jiang, Junkai, Chang, Faran, Zhou, Wenguang, Li, Nong, Chen, Weiqiang, Jiang, Dongwei, Hao, Hongyue, Wang, Guowei, Wu, Donghai, Xu, Yingqiang, Niu, ZhiChuan. High-performance extended short-wavelength infrared PBn photodetectors based on InAs/GaSb/AlSb superlattices. CHINESE PHYSICS B[J]. 2023, 32(3): 589-593, http://dx.doi.org/10.1088/1674-1056/acaa2e.
[3] Cao, Qingchen, Wu, Yuyang, Zhao, Yunhao, Xu, Yingqiang, Niu, Zhichuan, Shi, Yi, Liu, Yongsheng, Liu, Xianhu, Zhang, Xuefeng, Che, Renchao. Fine modulation of the energy band strategy to control the carrier confinement capability of digital alloys. NANOTECHNOLOGY[J]. 2023, 34(3): [4] Zhou, Wenguang, Liang, Yan, Li, Nong, Chang, Faran, Jiang, Junkai, Chen, Weiqiang, Jiang, Dongwei, Hao, Hongyue, Wu, Donghai, Wang, Guowei, Xu, Yingqiang, Niu, Zhichuan. High responsivity short-wavelength dual-band photodetector based on AlInAsSb digital alloy. INFRARED PHYSICS & TECHNOLOGY[J]. 2023, 133: http://dx.doi.org/10.1016/j.infrared.2023.104763.
[5] Zhou Wenguang, Jiang Dongwei, Shang Xiangjun, Wu Donghai, Chang Faran, Jiang Junkai, Li Nong, Lin Fangqi, Chen Weiqiang, Hao Hongyue, Liu Xuelu, Tan Pingheng, Wang Guowei, Xu Yingqiang, Niu Zhichuan. On the origin of carrier localization in AlInAsSb digital alloy. CHINESE PHYSICS. B[J]. 2023, 32(8): http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=7538895&detailType=1.
[6] Cui, SuNing, Chen, WeiQiang, Jiang, DongWei, Wu, DongHai, Wang, GuoWei, Xu, YingQiang, Niu, ZhiChuan. Dark current simulation and analysis for InAs/GaSb long wavelength infrared barrier detectors. INFRARED PHYSICS & TECHNOLOGY[J]. 2022, 121: http://dx.doi.org/10.1016/j.infrared.2021.104006.
[7] Liang, Yan, Perumalveeramalai, Chandrasekar, Lin, Guochen, Su, Xiangbin, Zhang, Xiaoming, Feng, Shuai, Xu, Yingqiang, Li, Chuanbo. A review on III-V compound semiconductor short wave infrared avalanche photodiodes. NANOTECHNOLOGYnull. 2022, 33(22): http://dx.doi.org/10.1088/1361-6528/ac5442.
[8] 徐应强. 液氮生态系统与中国现代能源体系构建. 学术前沿. 2022, 66-75, http://lib.cqvip.com/Qikan/Article/Detail?id=7107781414.
[9] 林芳祁, 李农, 周文广, 蒋俊锴, 常发冉, 李勇, 崔素宁, 陈伟强, 蒋洞微, 郝宏玥, 王国伟, 徐应强, 牛智川. Growth of high material quality InAs/GaSb type-II superlattice for long-wavelength infrared range by molecular beam epitaxy. 中国物理B[J]. 2022, 31: 098504-, https://iopscience.iop.org/article/10.1088/1674-1056/ac615d.
[10] Xu, XueYue, Jiang, JunKai, Chen, WeiQiang, Cui, SuNing, Zhou, WenGuang, Li, Nong, Chang, FaRan, Wang, GuoWei, Xu, YingQiang, Jiang, DongWei, Wu, DongHai, Hao, HongYue, Niu, ZhiChuan. Wet etching and passivation of GaSb-based very long wavelength infrared detectors. CHINESE PHYSICS B[J]. 2022, 31(6): 132-136, http://dx.doi.org/10.1088/1674-1056/ac4cc1.
[11] Xu Yingqiang. Research on character of molecular beam epitaxial GaSb thermophotovoltaic (TPV) cells. 红外与激光工程. 2021, [12] Ma, Xiaole, Guo, Jie, Hao, Ruiting, Wei, Guoshuai, Chang, Faran, Li, Yong, Li, Xiaoming, Jiang, Dongwei, Wang, Guowei, Xu, Yingqiang, Niu, Zhichuan. Growth and photo-electronic characteristics of short/mid wave dual-band infrared detectors based on GaSb bulk and InAs/GaSb superlattices. OPTICAL MATERIALS EXPRESS[J]. 2021, 11(2): 585-591, https://www.webofscience.com/wos/woscc/full-record/WOS:000615987600015.
[13] Wei GuoShuai, Hao RuiTing, Guo Jie, Ma XiaoLe, Li XiaoMing, Li Yong, Chang FaRan, Zhuang Yu, Wang GuoWei, Xu YingQiang, Niu ZhiChuan, Wang Yao. High quality strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy. JOURNALOFINFRAREDANDMILLIMETERWAVES[J]. 2021, 40(5): 595-604, http://dx.doi.org/10.11972/j.issn.1001-9014.2021.05.005.
[14] 徐应强. 高倍增低暗电流AlInAsSb四元数字合金雪崩光电二极管. 红外与毫米波学报. 2021, [15] Jiang, JunKai, Li, Yong, Chang, FaRan, Cui, SuNing, Chen, WeiQiang, Jiang, DongWei, Wang, GuoWei, Xu, YingQiang, Niu, ZhiChuan, Che, Renchao, Zhang, Chuanjie, Huang, Li. MBE growth of mid-wavelength infrared photodetectors based on high quality InAs/AlAs/InAsSb superlattice. JOURNAL OF CRYSTAL GROWTH[J]. 2021, 564: http://dx.doi.org/10.1016/j.jcrysgro.2021.126109.
[16] 牛智川, 徐应强, 张宇, 杨成奥, 陈益航, 王天放, 余红光, 石建美. 第四代半导体锑化物低维结构中红外激光器:从原理到器件. 科技纵览[J]. 2021, 74-77, http://lib.cqvip.com/Qikan/Article/Detail?id=7106297587.
[17] Xu Yingqiang. GaSb-based type-I quantum well cascade diode lasers emitting at nearly 2-µm wavelength with digitally grown AlGaAsSb gradient layers. Chinese Physics B. 2021, [18] 张一, 杨成奥, 尚金铭, 陈益航, 王天放, 张宇, 徐应强, 刘冰, 牛智川. 半导体带间级联激光器研究进展. 光学学报[J]. 2021, 41(1): 211-227, http://lib.cqvip.com/Qikan/Article/Detail?id=7104409807.
[19] Zheng DaNong, Su XiangBin, Xu YingQiang, Niu ZhiChuan. High gain and low dark current AlInAsSb avalanche photodiodes grown by quaternary digital alloys. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2021, 40(2): 172-177, http://dx.doi.org/10.11972/j.issn.1001-9014.2021.02.006.
[20] 郑大农, 苏向斌, 徐应强, 牛智川. 分子束外延生长的GaSb热光伏电池器件特性研究. 红外与激光工程[J]. 2021, 50(3): 299-306, http://lib.cqvip.com/Qikan/Article/Detail?id=7104356071.
[21] 常发冉, 蒋志, 王国伟, 李勇, 崔素宁, 蒋洞微, 徐应强, 牛智川. 锑化物超晶格长波红外焦平面探测器研究进展. 中国科学:物理学、力学、天文学[J]. 2021, 51(2): 28-45, https://www.sciengine.com/doi/10.1360/SSPMA-2020-0307.
[22] 马润泽, 张晓明, 冯帅, 郑军, 徐应强, 李传波. 红外光电探测技术研究现状及展望(特邀). 光子学报[J]. 2021, 50(10): 253-268, http://lib.cqvip.com/Qikan/Article/Detail?id=7105791274.
[23] Zhang, Yi, Yang, ChengAo, Shang, JinMing, Chen, YiHang, Wang, TianFang, Zhang, Yu, Xu, YingQiang, Liu, Bing, Niu, ZhiChuan. GaSb-based type-I quantum well cascade diode lasers emitting at nearly 2-mu m wavelength with digitally grown AlGaAsSb gradient layers*. CHINESE PHYSICS B[J]. 2021, 30(9): [24] Wang, Tianfang, Yang, Chengao, Zhang, Yi, Chen, Yihang, Shang, Jinming, Zhang, Yu, Xu, Yingqiang, Niu, Zhichuan. High spectral purity GaSb-based blazed grating external cavity laser with tunable single-mode operation around 1940nm. OPTICS EXPRESS[J]. 2021, 29(21): 33864-33873, http://dx.doi.org/10.1364/OE.439255.
[25] Ma XiaoLe, Guo Jie, Hao RuiTing, Wei GuoShuai, Wang GuoWei, Xu YingQiang, Niu ZhiChuan. Mid-/Short-Wave dual-band infrared detector based on InAs/GaSb superlattice/GaSb bulk materials. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2021, 40(5): 569-575, [26] Wei, Guoshuai, Hao, Ruiting, Li, Xiaoming, Wang, Yunpeng, Fang, Shuiliu, Guo, Jie, Ma, Xiaole, Ren, Yang, Li, Junbin, Kong, JinCheng, Wang, Guowei, Xu, Yingqiang, Wu, Donghai, Niu, Zhichuan. Performance and electron radiation damage of InAs/GaSb long-wave infrared detectors based on P pi MN design. JOURNAL OF APPLIED PHYSICS[J]. 2021, 130(7): [27] Li, Nong, Chen, Weiqiang, Zheng, Danong, Sun, Ju, Jia, Qingxuan, Jiang, Junkai, Wang, Guowei, Jiang, Dongwei, Xu, Yingqiang, Niu, Zhichuan. The investigations to eliminate the bias dependency of quantum efficiency of InGaAsSb nBn photodetectors for extended short wavelength infrared detection. INFRARED PHYSICS & TECHNOLOGY[J]. 2020, 111: http://dx.doi.org/10.1016/j.infrared.2020.103461.
[28] Zhang, Xuan, Jia, QingXuan, Sun, Ju, Jiang, DongWei, Wang, GuoWei, Xu, YingQiang, Niu, ZhiChuan. High-performance midwavelength infrared detectors based on InAsSb nBn design. CHINESE PHYSICS B[J]. 2020, 29(6): 549-552, http://lib.cqvip.com/Qikan/Article/Detail?id=7102153237.
[29] 袁野, 柴小力, 杨成奥, 张一, 尚金铭, 谢圣文, 李森森, 张宇, 徐应强, 宿星亮, 牛智川. 2.75μm中红外GaSb基五元化合物势垒量子阱激光器. 中国激光[J]. 2020, 47(7): 295-299, http://lib.cqvip.com/Qikan/Article/Detail?id=7102611276.
[30] Xu Yingqiang. MBE growth of high quality AlInSb/GaSb compound bufer. Optical and Quantum Electronics. 2020, [31] Cui, SuNing, Jiang, DongWei, Sun, Ju, Jia, QingXuan, Li, Nong, Zhang, Xuan, Li, Yong, Chang, FaRan, Wang, GuoWei, Xu, YingQiang, Niu, ZhiChuan. Investigation of active-region doping on InAs/GaSb long wave infrared detectors. CHINESE PHYSICS B[J]. 2020, 29(4): 516-522, http://lib.cqvip.com/Qikan/Article/Detail?id=7101531622.
[32] 齐通通, 郭杰, 王国伟, 郝瑞亭, 徐应强, 常发然. Sb浸润界面对InAs/InAsSb超晶格晶体结构和探测器性能的影响. 材料导报[J]. 2020, 34(S01): 86-89, http://lib.cqvip.com/Qikan/Article/Detail?id=7102066319.
[33] 蒋洞微, 徐应强, 王国伟, 牛智川. 基于锑化物二类超晶格的多色红外探测器研究进展. 人工晶体学报[J]. 2020, 49(12): 2211-2220, http://lib.cqvip.com/Qikan/Article/Detail?id=7103807709.
[34] Xu Yingqiang. MBE Growth of High Quality InSb Thin Films on GaAs Substrates with AlInSb/GaSb as Compound Buffer Layers. CHINESE PHYSICS B. 2020, [35] Yuan Ye, Su XiangBin, Yang Chengao, Zhang Yi, Shang JinMing, Xie ShengWen, Zhang Yu, Ni HaiQiao, Xu YingQiang, Nil ZhiChuan. Molecular beam epitaxial growth of InAs quantum dots on GaAs for high characteristics temperature lasers. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2020, 39(6): 667-670, https://www.webofscience.com/wos/woscc/full-record/WOS:000603449000001.
[36] 袁野, 苏向斌, 杨成奥, 张一, 尚金铭, 谢圣文, 张宇, 倪海桥, 徐应强, 牛智川. 利用分子束外延在GaAs基上生长高特征温度的InAs量子点激光器. 红外与毫米波学报[J]. 2020, 39(6): 667-670, http://lib.cqvip.com/Qikan/Article/Detail?id=7103711717.
[37] 杨成奥, 张一, 尚金铭, 陈益航, 王天放, 佟海保, 任正伟, 张宇, 徐应强, 牛智川. 2~4μm中红外锑化物半导体激光器研究进展(特邀). 红外与激光工程[J]. 2020, 49(12): 155-163, http://lib.cqvip.com/Qikan/Article/Detail?id=7103953811.
[38] Yong Li, Xiaoming Li, Ruiting Hao, Jie Guo, Yunpeng Wang, Abuduwayiti Aierken, Yu Zhuang, Faran Chang, Kang Gu, Guoshuai Wei, Xiaole Ma, Guowei Wang, Yingqiang Xu, Zhichuan Niu. MBE growth of high quality AlInSb/GaSb compound buffer layers on GaAs substrates. OPTICAL AND QUANTUM ELECTRONICS[J]. 2020, 52(3): 138-, https://www.webofscience.com/wos/woscc/full-record/WOS:000517159800002.
[39] Xie Shengwen, Zhang Yu, Yang Chengao, Huang Shushan, Yuan Ye, Zhang Yi, Shang Jinming, Shao Fuhui, Xu Yingqiang, Ni Haiqiao, Niu Zhichuan. High performance GaSb based digital-grown InGaSb/AlGaAsSb mid-infrared lasers and bars. 中国物理B:英文版[J]. 2019, 411-414, http://lib.cqvip.com/Qikan/Article/Detail?id=90718776504849574849485255.
[40] Xie Shengwen, Niu Zhichuan, Yang ChengAo, Zhang Yi, Shang JinMing, Shao FuHui, Zhang Yu, Xu Yingqiang, Zhu J, Chen W, Zhang Z, Zhong M, Wang P, Qiu J. Micro-stripe broad-area Infrared diode lasers without deterioration of output power. 14TH NATIONAL CONFERENCE ON LASER TECHNOLOGY AND OPTOELECTRONICS (LTO 2019)null. 2019, 11170: [41] Xie, Shengwen, Yang, Chengao, Huang, ShuShan, Yuan, Ye, Zhang, Yi, Shang, Jinming, Cai, Chenyuan, Zhang, Yu, Xu, Yingqiang, Ni, Haiqiao, Niu, Zhichuan. 2.1 mu m InGaSb quantum well lasers exhibiting the maximum conversion efficiency of 27.5% with digitally grown AlGaAsSb barriers and gradient layers. SUPERLATTICES AND MICROSTRUCTURES[J]. 2019, 130: 339-345, http://dx.doi.org/10.1016/j.spmi.2019.05.002.
[42] Chang Faran, Hao Ruiting, Qi Tongtong, Zhao Qichen, Liu Xinxing, Li Yong, Gu Kang, Guo Jie, Wang Guowei, Xu Yingqiang, Niu Zhichuan. High material quality growth of AlInAsSb thin films on GaSb substrate by molecular beam epitaxy. 中国物理B:英文版[J]. 2019, 449-453, http://lib.cqvip.com/Qikan/Article/Detail?id=90718776504849574850485451.
[43] Yang, ChengAo, Xie, ShengWen, Zhang, Yi, Shang, JinMing, Huang, ShuShan, Yuan, Ye, Shao, FuHui, Zhang, Yu, Xu, YingQiang, Niu, ZhiChuan. High-power, high-spectral-purity GaSb-based laterally coupled distributed feedback lasers with metal gratings emitting at 2 mu m. APPLIED PHYSICS LETTERS[J]. 2019, 114(2): [44] Zhang Yi, Shao FuHui, Yang ChengAo, Xie ShengWen, Huang ShuShan, Yuan Ye, Shang JinMing, Zhang Yu, Xu YingQiang, Ni HaiQiao, Niu ZhiChuan, Zhu J, Chen W, Zhang Z, Zhong M, Wang P, Qiu J. Optimum growth parameters of InAs/AlSb superlattices for interband cascade lasers. 14TH NATIONAL CONFERENCE ON LASER TECHNOLOGY AND OPTOELECTRONICS (LTO 2019)null. 2019, 11170: [45] Chenyuan Cai, Yunhao Zhao, Shengwen Xie, Xuebing Zhao, Yu Zhang, Yingqiang Xu, Chongyun Liang, Zhichuan Niu, Yi Shi, Yuesheng Li, Renchao Che. Heterointerface‐Driven Band Alignment Engineering and its Impact on Macro‐Performance in Semiconductor Multilayer Nanostructures. Small[J]. 2019, 15(27): https://www.doi.org/10.1002/smll.201900837.
[46] Guo, Chunyan, Jiang, Zhi, Jiang, Dongwei, Wang, Guowei, Xu, Yingqiang, Wang, Tao, Tian, Jinshou, Wu, Zhaoxin, Niu, Zhichuan. Sulfide treatment passivation of mid-/long-wave dual-color infrared detectors based on type-II InAs/GaSb superlattices. OPTICAL AND QUANTUM ELECTRONICS[J]. 2019, 51(3): http://ir.opt.ac.cn/handle/181661/31209.
[47] Yang, ChengAo, Xie, ShengWen, Huang, ShuShan, Yuan, Ye, Zhang, Yi, Shang, JinMing, Zhang, Yu, Xu, YingQiang, Niu, ZhiChuan. High-Power Laterally Coupled Distributed Feedback Lasers With Metal Gratings Around 2 mu m. IEEE PHOTONICS TECHNOLOGY LETTERS[J]. 2019, 31(3): 210-213, https://www.webofscience.com/wos/woscc/full-record/WOS:000457326700003.
[48] Qi, TongTong, Guo, Jie, Hao, RuiTing, Liu, Yu, Chang, FaRan, Jiang, Zhi, He, XiaoWu, Jiang, DongWei, Wang, GuoWei, Xu, YingQiang, Niu, ZhiChuan. Growth and characterization of type-II superlattice photodiodes with cutoff wavelength of 12 mu m on 4-in. wafer. OPTICAL AND QUANTUM ELECTRONICS[J]. 2019, 51(9): https://www.webofscience.com/wos/woscc/full-record/WOS:000482439200001.
[49] Jiang, Zhi, Sun, YaoYao, Guo, ChunYan, Lv, YueXi, Hao, HongYue, Jiang, DongWei, Wang, GuoWei, Xu, YingQiang, Niu, ZhiChuan. High quantum efficiency long-/long-wave dual-color type-II InAs/GaSb infrared detector. CHINESE PHYSICS B[J]. 2019, 28(3): [50] Zhao, Yunhao, Cai, Chenyuan, Zhang, Yi, Zhao, Xuebing, Xu, Yingqiang, Liang, Chongyun, Niu, Zhichuan, Shi, Yi, Che, Renchao. Control of electron tunnelling by fine band engineering of semiconductor potential barriers. NANOSCALE[J]. 2019, 11(44): 21376-21385, http://dx.doi.org/10.1039/c9nr03268a.
[51] Guo, Chunyan, Sun, Yaoyao, Jia, Qingxuan, Jiang, Zhi, Jiang, Dongwei, Wang, Guowei, Xu, Yingqiang, Wang, Tao, Tian, Jinshou, Wu, Zhaoxin, Niu, Zhichuan. Wide spectrum responsivity detectors from visible to mid-infrared based on antimonide. INFRARED PHYSICS & TECHNOLOGY[J]. 2019, 96: 1-6, http://dx.doi.org/10.1016/j.infrared.2018.10.037.
[52] Xie, ShengWen, Zhang, Yu, Yang, ChengAo, Huang, ShuShan, Yuan, Ye, Zhang, Yi, Shang, JinMing, Shao, FuHui, Xu, YingQiang, Ni, HaiQiao, Niu, ZhiChuan. High performance GaSb based digital-grown InGaSb/AlGaAsSb mid-infrared lasers and bars. CHINESE PHYSICS B[J]. 2019, 28(1): http://lib.cqvip.com/Qikan/Article/Detail?id=90718776504849574849485255.
[53] Xu Yingqiang. High-power, high-spectral-purity GaSb-based laterally coupled distributed feedback lasers with metal gratings emitting at 2 lm. APPLIED PHYSICS LETTERS. 2019, [54] Nong Li, Ju Sun, Qingxuan Jia, Yifeng Song, Dongwei Jiang, Guowei Wang, Yingqiang Xu, Zhichuan Niu. High performance nBn detectors based on InGaAsSb bulk materials for short wavelength infrared detection. AIP ADVANCES[J]. 2019, 9(10): https://doaj.org/article/63b313fa56c34f339a947f103ec14e2f.
[55] 牛智川, 徐应强, 张宇, 倪海桥, 杨成奥, 谢圣文, 尚金铭, 张一, 袁野, 陈益航, 蒋俊凯. 第四代半导体拂化物低维结构外延晶圆材料与激光器技术. 科技纵览[J]. 2019, 65-67, http://lib.cqvip.com/Qikan/Article/Detail?id=7100847243.
[56] Su, XiangBin, Ding, Ying, Ma, Ben, Zhang, KeLu, Chen, ZeSheng, Li, JingLun, Cui, XiaoRan, Xu, YingQiang, Ni, HaiQiao, Niu, ZhiChuan. Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-mu m Quantum Dot Lasers. NANOSCALE RESEARCH LETTERS[J]. 2018, 13: https://www.webofscience.com/wos/woscc/full-record/WOS:000426313300002.
[57] 黄书山, 杨成奥, 张宇, 谢圣文, 廖永平, 柴小力, 徐应强, 牛智川. 利用高阶DBR实现简单的2.0μm GaSb激光器. 红外与毫米波学报[J]. 2018, 37(6): 653-656, http://lib.cqvip.com/Qikan/Article/Detail?id=7000993146.
[58] 崔晓然, 吕红亮, 李金伦, 苏向斌, 徐应强, 牛智川. GaAs基InAs/AlSb二维电子气结构的生长优化. 红外与毫米波学报[J]. 2018, 37(4): 385-388, http://lib.cqvip.com/Qikan/Article/Detail?id=675956422.
[59] Luo Hao, Yang ChengAo, Xie Shengwen, Chai Xiaoli, Huang Shushan, Zhang Yu, Xu Yingqiang, Niu Zhichuan. High order DBR GaSb based single longitude mode diode lasers at 2 μm wavelength. 半导体学报:英文版[J]. 2018, 39(10): 104007-1, http://lib.cqvip.com/Qikan/Article/Detail?id=676530430.
[60] Li, Xiang, Wang, Hong, Qiao, Zhongliang, Guo, Xin, Wang, Wanjun, Ng, Geok Ing, Zhang, Yu, Xu, Yingqiang, Niu, Zhichuan, Tong, Cunzhu, Liu, Chongyang. Investigation of regime switching from mode locking to Q-switching in a 2 mu m InGaSb/GaAsSb quantum well laser. OPTICS EXPRESS[J]. 2018, 26(7): 8289-8295, http://dx.doi.org/10.1364/OE.26.008289.
[61] 谢圣文, 杨成奥, 黄书山, 袁野, 邵福会, 张一, 尚金铭, 张宇, 徐应强, 倪海桥, 牛智川. 2μm GaSb基大功率半导体激光器研究进展. 红外与激光工程[J]. 2018, 47(5): 0503003-1, http://lib.cqvip.com/Qikan/Article/Detail?id=675275066.
[62] Zhang, Yi, Cheng, FuHui, Yang, Cheng Ao, Xie, ShengWen, Huang, ShuShan, Yuan, Ye, Shang, JinMing, Zhang, Yu, Xu, YingQiang, Ni, HaiQiao, Niu, ZhiChuan. Room-temperature continuous-wave interband cascade laser emitting at 3.45 mu m. CHINESE PHYSICS B[J]. 2018, 27(12): https://www.webofscience.com/wos/woscc/full-record/WOS:000454122000007.
[63] Huang Shushan, Zhang Yu, Yang Chengao, Xie Shengwen, Xu Yingqiang, Ni Haiqiao, Niu Zhichuan. Performance Improvement of 2.0 mu m GaSb Laser Diode by Facet Coating. CHINESE JOURNAL OF LASERS-ZHONGGUO JIGUANG[J]. 2018, 45(9): [64] Cui XiaoRan, Lyu HongLiang, Li JinLun, Su XiangBin, Xu YingQiang, Niu ZhiChuan. Growth optimization of GaAs-based InAs/AlSb 2DEG structure. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2018, 37(4): 385-388, https://www.webofscience.com/wos/woscc/full-record/WOS:000448285000001.
[65] Hao Luo, Cheng'ao Yang, Shengwen Xie, Xiaoli Chai, Shushan Huang, Yu Zhang, Yingqiang Xu, Zhichuan Niu. High order DBR GaSb based single longitude mode diode lasers at 2 μm wavelength. 半导体学报:英文版[J]. 2018, 39(10): 58-63, http://lib.cqvip.com/Qikan/Article/Detail?id=676530430.
[66] Guo, Chunyan, Sun, Yaoyao, Jia, Zhe, Jiang, Zhi, Lv, Yuexi, Hao, Hongyue, Han, Xi, Dong, Yinan, Jiang, Dongwei, Wang, Guowei, Xu, Yingqiang, Wang, Tao, Tian, Jinshou, Wu, Zhaoxin, Niu, Zhichuan. Visible-extended mid-infrared wide spectrum detector based on InAs/GaSb type-II superlattices (T2SL). INFRARED PHYSICS & TECHNOLOGY[J]. 2018, 89: 147-153, http://ir.opt.ac.cn/handle/181661/30808.
[67] 张一, 张宇, 杨成奥, 谢圣文, 邵福会, 尚金铭, 黄书山, 袁野, 徐应强, 倪海桥, 牛智川. 3~4μm锑化物带间级联激光器研究进展(特邀). 红外与激光工程[J]. 2018, 47(10): 1003003-1, http://lib.cqvip.com/Qikan/Article/Detail?id=7000867872.
[68] 黄书山, 张宇, 杨成奥, 谢圣文, 徐应强, 倪海桥, 牛智川. 镀膜对2.0μm锑化物激光器性能的提升. 中国激光[J]. 2018, 45(9): 0901005-1, http://lib.cqvip.com/Qikan/Article/Detail?id=676417832.
[69] Han, Xi, Jiang, Dongwei, Wang, Guowei, Hao, Hongyue, Sun, Yaoyao, Jiang, Zhi, Lv, Yuexi, Guo, Chunyan, Xu, Yingqiang, Niu, Zhichuan. Small-pixel long wavelength infrared focal plane arrays based on InAs/GaSb Type-II superlattice. INFRARED PHYSICS & TECHNOLOGY[J]. 2018, 89: 35-40, http://dx.doi.org/10.1016/j.infrared.2017.12.004.
[70] Huang ShuShan, Yang ChengAo, Zhang Yu, Xie Shengwen, Liao YongPing, Chai XiaoLi, Xu YingQiang, Niu ZhiChuan. A simple approach to obtain 2.0 mu m GaSb laser by using high-order distributed Bragg reflector. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2018, 37(6): 653-656, https://www.webofscience.com/wos/woscc/full-record/WOS:000455098300002.
[71] Guo Chunyan, Lv Yuexi, Zheng Danong, Sun Yaoyao, Jiang Zhi, Jiang Dongwei, Wang Guowei, Xu Yingqiang, Wang Tao, Tian Jinshou, Wu Zhaoxin, Niu Zhichuan, Zhang X, Li B, Yu C, Zhang X. Surface passivation of 1550nm AlxInyAsSb avalanche photodiode. OPTOELECTRONIC DEVICES AND INTEGRATION VIInull. 2018, 10814: http://ir.opt.ac.cn/handle/181661/30864.
[72] Shao, FuHui, Zhang, Yi, Su, XiangBin, Xie, ShengWen, Shang, JinMing, Zhao, YunHao, Cai, ChenYuan, Che, RenChao, Xu, YingQiang, Ni, HaiQiao, Niu, ZhiChuan. 1.3-mu m InAs/GaAs quantum dots grown on Si substrates. CHINESE PHYSICS B[J]. 2018, 27(12): https://www.webofscience.com/wos/woscc/full-record/WOS:000454127600005.
[73] Lu, Zefeng, Wang, Lijie, Zhang, Yu, Shu, Shili, Tian, Sicong, Tong, Cunzhu, Hou, Guanyu, Chai, Xiaoli, Xu, Yingqiang, Ni, Haiqiao, Niu, Zhichuan, Wang, Lijun. High-power GaSb-based microstripe broad-area lasers. APPLIED PHYSICS EXPRESS[J]. 2018, 11(3): https://www.webofscience.com/wos/woscc/full-record/WOS:000425960100001.
[74] 李翔, 汪宏, 乔忠良, 张宇, 徐应强, 牛智川, 佟存柱, 刘重阳. 2μm InGaSb/AlGaAsSb量子阱激光器理想因子的研究. 红外与激光工程[J]. 2018, 47(5): 0503001-1, http://lib.cqvip.com/Qikan/Article/Detail?id=675275064.
[75] 黄书山, 杨成奥, 张宇, 谢圣文, 廖永平, 柴小力, 徐应强, 牛智川. 利用高阶DBR实现简单的2.0μm GaSb激光器. 红外与毫米波学报[J]. 2018, 37(6): 653-656, http://lib.cqvip.com/Qikan/Article/Detail?id=7000993146.
[76] 杨成奥, 谢圣文, 黄书山, 袁野, 张一, 尚金铭, 张宇, 徐应强, 牛智川. 锑化物中红外单模半导体激光器研究进展. 红外与激光工程[J]. 2018, 47(5): 0503002-1, http://lib.cqvip.com/Qikan/Article/Detail?id=675275065.
[77] Lyu, Yuexi, Han, Xi, Sun, Yaoyao, Jiang, Zhi, Guo, Chunyan, Xiang, Wei, Dong, Yinan, Cui, Jie, Yao, Yuan, Jiang, Dongwei, Wang, Guowei, Xu, Yingqiang, Niu, Zhichuan. Digitally grown AlInAsSb for high gain separate absorption, grading, charge, and multiplication avalanche photodiodes. JOURNAL OF CRYSTAL GROWTH[J]. 2018, 482: 70-74, http://dx.doi.org/10.1016/j.jcrysgro.2017.10.035.
[78] Hao, Hongyue, Wang, Guowei, Han, Xi, Jiang, Dongwei, Sun, Yaoyao, Guo, Chunyan, Xiang, Wei, Xu, Yingqiang, Niu, Zhichuan. Extended-wavelength InGaAsSb infrared unipolar barrier detectors. AIP ADVANCES[J]. 2018, 8(9): https://doaj.org/article/bf85970b59f74b3c80c3fdbddff8e58e.
[79] 尚金铭, 张宇, 杨成奥, 谢圣文, 黄书山, 袁野, 张一, 邵福会, 徐应强, 牛智川. GaSb基光泵浦半导体碟片激光器的研究进展(特邀). 红外与激光工程[J]. 2018, 47(10): 1003004-1, http://lib.cqvip.com/Qikan/Article/Detail?id=7000867873.
[80] 张一, 邵福会, 杨成奥, 谢圣文, 黄书山, 袁野, 尚金铭, 张宇, 徐应强, 倪海桥, 牛智川. Room-temperature continuous-wave interband cascade laser emitting at 3.45 μm. 中国物理B[J]. 2018, 27(12): 124207-1, http://lib.cqvip.com/Qikan/Article/Detail?id=6100082061.
[81] Huang Shushan, Zhang Yu, Liao Yongping, Yang Chengao, Chai Xiaoli, Xu Yingqiang, Ni Haiqiao, Niu Zhichuan. High-Power Single-Spatial-Mode GaSb Tapered Laser around 2.0μm with Very Small Lateral Beam Divergence. 中国物理快报:英文版[J]. 2017, 34(8): 084202-1, http://lib.cqvip.com/Qikan/Article/Detail?id=673110257.
[82] Dongwei Jiang, Xi Han, Hongyue Hao, Yaoyao Sun, Zhi Jiang, Yuexi Lv, Chunyan Guo, Guowei Wang, Yingqiang Xu, Yang Yu, Zhichuan Niu. Significantly extended cutoff wavelength of very long-wave infrared detectors based on InAs/GaSb/InSb/GaSb superlattices. APPL. PHYS. LETT.[J]. 2017, 111: 161101-, http://ir.semi.ac.cn/handle/172111/28590.
[83] Jiang, Dongwei, Han, Xi, Hao, Hongyue, Sun, Yaoyao, Jiang, Zhi, Lv, Yuexi, Guo, Chunyan, Wang, Guowei, Xu, Yingqiang, Yu, Yang, Niu, Zhichuan. Significantly extended cutoff wavelength of very long-wave infrared detectors based on InAs/GaSb/InSb/GaSb superlattices. APPLIED PHYSICS LETTERS[J]. 2017, 111(16): [84] Han, Xi, Xiang, Wei, Hao, HongYue, Jiang, DongWei, Sun, YaoYao, Wang, GuoWei, Xu, YingQiang, Niu, ZhiChuan. Very long wavelength infrared focal plane arrays with 50% cutoff wavelength based on type-II InAs/GaSb superlattice. CHINESE PHYSICS B[J]. 2017, 26(1): https://www.webofscience.com/wos/woscc/full-record/WOS:000402763600003.
[85] Zhao, Yunhao, Liu, Lu, Bi, Han, Han, Xi, Zhao, Xuebing, Ni, Haiqiao, Xu, Yingqiang, Niu, Zhichuan, Che, Renchao. Quantum efficiency optimization by maximizing wave function overlap in type-II superlattice photodetectors. NANOSCALE[J]. 2017, 9(33): 11833-11840, http://dx.doi.org/10.1039/c7nr04319h.
[86] Jiang Zhi, Han Xi, Sun YaoYao, Guo ChunYan, Lv YueXi, Hao HongYue, Jiang DongWei, Wang GuoWei, Xu YingQiang, Niu ZhiChuan. Bias-selectable mid-/long-wave dual band infrared focal plane array based on Type-II InAs/GaSb superlattice. INFRARED PHYSICS AND TECHNOLOGY[J]. 2017, 86: 159-164, http://dx.doi.org/10.1016/j.infrared.2017.08.024.
[87] Hao Hongyue, Xiang Wei, Wang Guowei, Xu Yingqiang, Han Xi, Sun Yaoyao, Jiang Dongwei, Zhang Yu, Liao Yongping, Wei Sihang, Niu Zhichuan. Etching mask optimization of InAs/GaSb superlattice mid-wavelength infared 640×512 focal plane array. CHINESE PHYSICS. B[J]. 2017, 26(4): 047303-1, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=5967261&detailType=1.
[88] 黄书山, 张宇, 廖永平, 杨成奥, 柴小力, 徐应强, 倪海桥, 牛智川. High-Power Single-Spatial-Mode GaSb Tapered Laser around 2.0μm with Very Small Lateral Beam Divergence. 中国物理快报:英文版[J]. 2017, 34(8): 084202-1, http://lib.cqvip.com/Qikan/Article/Detail?id=673110257.
[89] Huang, ShuShan, Zhang, Yu, Liao, YongPing, Yang, ChengAo, Chai, XiaoLi, Xu, YingQiang, Ni, HaiQiao, Niu, ZhiChuan. High-Power Single-Spatial-Mode GaSb Tapered Laser around 2.0 mu m with Very Small Lateral Beam Divergence. CHINESE PHYSICS LETTERS[J]. 2017, 34(8): https://www.webofscience.com/wos/woscc/full-record/WOS:000412909200014.
[90] Hao, HongYue, Xiang, Wei, Wang, GuoWei, Xu, YingQiang, Han, Xi, Sun, YaoYao, Jiang, DongWei, Zhang, Yu, Liao, YongPing, Wei, SiHang, Niu, ZhiChuan. Etching mask optimization of InAs/GaSb superlattice mid-wavelength infared 640 x 512 focal plane array. CHINESE PHYSICS B[J]. 2017, 26(4): https://www.webofscience.com/wos/woscc/full-record/WOS:000400908800003.
[91] Bi, Han, Han, Xi, Liu, Lu, Zhao, Yunhao, Zhao, Xuebing, Wang, Guowei, Xu, Yingqiang, Niu, Zhichuan, Shi, Yi, Che, Renchao. Atomic Mechanism of Interfacial-Controlled Quantum Efficiency and Charge Migration in InAs/GaSb Superlattice. ACS APPLIED MATERIALS & INTERFACES[J]. 2017, 9(32): 26642-26647, http://dx.doi.org/10.1021/acsami.7b08397.
[92] 郝瑞亭, 任洋, 刘思佳, 郭杰, 王国伟, 徐应强, 牛智川. GaSb衬底上分子束外延生长的低温GaSb薄膜的低缺陷表面. 红外与毫米波学报[J]. 2017, 36(2): 135-138, http://lib.cqvip.com/Qikan/Article/Detail?id=671931026.
[93] Hao Ruiting, Ren Yang, Liu Sijia, Guo Jie, Wang Guowei, Xu Yingqiang, Niu Zhichuan. GaSb衬底上分子束外延生长的低温GaSb薄膜的低缺陷表面. 红外与毫米波学报[J]. 2017, 36(2): 135-138, http://lib.cqvip.com/Qikan/Article/Detail?id=671931026.
[94] Chai Xiaoli, Zhang Yu, Liao Yongping, Huang Shushan, Yang Chengao, Sun Yaoyao, Xu Yingqiang, Niu Zhichuan. High power GaSb - based 2.6 μm room- temperature laser diodes with InGaAsSb /AlGaAsSb type I quantum - wells. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2017, 36(3): 257-260, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=6017571&detailType=1.
[95] Sun Yaoyao, Han Xi, Hao Hongyue, Jiang Dongwei, Guo Chunyan, Jiang Zhi, Lv Yuexi, Wang Guowei, Xu Yingqiang, Niu Zhichuan ⇑. 320 _ 256 Short-/Mid-Wavelength dual-color infrared focal plane arrays based on Type-II InAs/GaSb superlattice. INFRARED PHYSICS & TECHNOLOGY[J]. 2017, 82: 140–143-, http://ir.semi.ac.cn/handle/172111/28586.
[96] Li, Xiang, Wang, Hong, Qiao, Zhongliang, Liao, Yongping, Zhang, Yu, Xu, Yingqiang, Niu, Zhichuan, Tong, Cunzhu, Liu, Chongyang. Temperature- and current-dependent spontaneous emission study on 2 mu m InGaSb/AlGaAsSb quantum well lasers. JAPANESE JOURNAL OF APPLIED PHYSICS[J]. 2017, 56(5): https://www.webofscience.com/wos/woscc/full-record/WOS:000399887100001.
[97] Sun, Yaoyao, Wang, Guowei, Han, Xi, Xiang, Wei, Jiang, Dongwei, Jiang, Zhi, Hao, Hongyue, Lv, Yuexi, Guo, Chunyan, Xu, Yingqiang, Niu, Zhichuan. 320 x 256 high operating temperature mid-infrared focal plane arrays based on type-II InAs/GaSb superlattice. SUPERLATTICES AND MICROSTRUCTURES[J]. 2017, 111: 783-788, https://www.webofscience.com/wos/woscc/full-record/WOS:000415768800085.
[98] 韩玺, 蒋洞微, 王国伟, 张宇, 倪海桥, 徐应强. 锑化物纳米结构的中红外激光器与探测器的新进展. 中国基础科学[J]. 2017, 19(6): 41-46, http://lib.cqvip.com/Qikan/Article/Detail?id=674390034.
[99] 柴小力, 张宇, 廖永平, 黄书山, 杨成奥, 孙姚耀, 徐应强, 牛智川. 高功率GaSb基2.6微米InGaAsSb/AlGaAsSbⅠ型量子阱室温工作激光器(英文). 红外与毫米波学报[J]. 2017, 36(3): 257-260, http://lib.cqvip.com/Qikan/Article/Detail?id=672553521.
[100] Liao YongPing, Zhang Yu, Yang ChengAo, Huang ShuShan, Chai XiaoLi, Wang CuoWei, Xu YingQiang, Ni HaiQiao, Niu ZhiChuan. High-power, high-efficient GaSb-based quantum well laser diodes emitting at 2 mu m. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2016, 35(6): 672-675, https://www.webofscience.com/wos/woscc/full-record/WOS:000392261700007.
[101] Li, Junbin, Wu, Xiaoguang, Wang, Guowei, Xu, Yingqiang, Niu, Zhichuan, Zhang, Xinhui. Photoexcitation-induced carrier dynamics in an undoped InAs/GaSb quantum well. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2016, 49(14): http://ir.semi.ac.cn/handle/172111/28059.
[102] Rong, Jiamin, Xing, Enbo, Zhang, Yu, Wang, Lijie, Shu, Shili, Tian, Sicong, Tong, Cunzhu, Chai, Xiaoli, Xu, Yingqiang, Ni, Haiqiao, Niu, Zhichuan, Wang, Lijun. Low lateral divergence 2 mu m InGaSb/AlGaAsSb broad-area quantum well lasers. OPTICS EXPRESS[J]. 2016, 24(7): 7246-7252, http://ir.ciomp.ac.cn/handle/181722/57168.
[103] 廖永平, 张宇, 杨成奥, 黄书山, 柴小力, 王国伟, 徐应强, 倪海桥, 牛智川. 大功率高效率2μm锑化镓基量子阱激光器. 红外与毫米波学报[J]. 2016, 35(6): 672-675, http://lib.cqvip.com/Qikan/Article/Detail?id=670914813.
[104] Yang, ChengAo, Zhang, Yu, Liao, YongPing, Xing, JunLiang, Wei, SiHang, Zhang, LiChun, Xu, YingQiang, Ni, HaiQiao, Niu, ZhiChuan. 2-mu m single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth-free shallow-etched gratings by interference lithography. CHINESE PHYSICS B[J]. 2016, 25(2): [105] 马文全, 张艳华, 徐应强, 王琦. 兼容集成中的新型材料系探索与特殊超晶格结构研究年度报告. 科技创新导报[J]. 2016, 13(1): 176-176, http://lib.cqvip.com/Qikan/Article/Detail?id=669338463.
[106] Yang Chengao, Zhang Yu, Liao Yongping, Xing Junliang, Wei Sihang, Zhang Lichun, Xu Yingqiang, Ni Haiqiao, Niu Zhichuan. 2-μm single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth-free shallow-etched gratings by interference lithography. CHINESE PHYSICS B[J]. 2016, 25(2): 024204-, http://ir.semi.ac.cn/handle/172111/27995.
[107] Xiang, Wei, Wang, Guowei, Hao, Hongyue, Liao, Yongping, Han, Xi, Zhang, Lichun, Xu, Yingqiang, Ren, Zhengwei, Ni, Haiqiao, He, Zhenhong, Niu, Zhichuan. InAs homoepitaxy and InAs/AlSb/GaSb resonant interband tunneling diodes on InAs substrate. JOURNAL OF CRYSTAL GROWTH[J]. 2016, 443: 85-89, http://dx.doi.org/10.1016/j.jcrysgro.2016.03.021.
[108] Dongwei Jiang, Wei Xiang, Fengyun Guo, Hongyue Hao, Xi Han, Xiaochao Li, Guowei Wang, Yingqiang Xu, Qingjiang Yu, Zhichuan Niu. Very high quantum efficiency in InAs/GaSb superlattice for very long wavelength detection with cutoff of 21 µm. APPLIEDPHYSICSLETTERS[J]. 2016, 108(12): 121110-, http://ir.semi.ac.cn/handle/172111/27829.
[109] Jiamin Rong, Enbo Xing, Yu Zhang, Lijie Wang, Shili Shu, Sicong Tian, Cunzhu Tong, Xiaoli Chai, Yingqiang Xu, Haiqiao Ni, Zhichuan Niu, Lijun Wang. Low lateral divergence 2 μm InGaSb/ AlGaAsSb broad-area quantum well lasers. OPTICS EXPRESS[J]. 2016, 24(7): 7246-7252, http://ir.semi.ac.cn/handle/172111/27821.
[110] Ren Yang, Hao Ruiting, Liu Sijia, Guo Jie, Wang Guowei, Xu Yingqiang, Niu Zhichuan. High Lattice Match Growth of InAsSb Based Materials by Molecular Beam Epitaxy. 中国物理快报:英文版[J]. 2016, 33(12): 128101-1, http://lib.cqvip.com/Qikan/Article/Detail?id=670952843.
[111] Jiang Dongwei, Xiang Wei, Guo Fengyun, Hao Hongyue, Han Xi, Li Xiaochao, Wang Guowei, Xu Yingqiang, Yu Qingjiang, Niu Zhichuan. Low Crosstalk Three-Color Infrared Detector by Controlling the Minority Carriers Type of InAs/GaSb Superlattices for Middle-Long and Very-Long Wavelength. 中国物理快报:英文版[J]. 2016, 048502-01, http://lib.cqvip.com/Qikan/Article/Detail?id=668549858.
[112] 郝宏玥, 向伟, 王国伟, 徐应强, 任正伟, 韩玺, 贺振宏, 廖永平, 魏思航, 牛智川. Wet Chemical Etching of Antimonide-Based Infrared Materials. 中国物理快报:英文版[J]. 2015, 102-105, http://lib.cqvip.com/Qikan/Article/Detail?id=666304873.
[113] Hao HongYue, Xiang Wei, Wang GuoWei, Xu YingQiang, Ren ZhengWei, Han Xi, He ZhenHong, Liao YongPing, Wei SiHang, Niu ZhiChuan. Wet Chemical Etching of Antimonide-Based Infrared Materials. CHINESE PHYSICS LETTERS[J]. 2015, 32(10): http://lib.cqvip.com/Qikan/Article/Detail?id=666304873.
[114] 向伟, 王国伟, 徐应强, 郝宏玥, 蒋洞微, 任正伟, 贺振宏, 牛智川. 中波InAs/GaSb超晶格红外焦平面探测器. 航空兵器[J]. 2015, 49-51, http://lib.cqvip.com/Qikan/Article/Detail?id=664034870.
[115] Wang Guowei, Xu Yingqiang, Niu Zhichuan, Liao Yongping, Zhang Yu, Xing Junliang, Wei Sihang, Hao Hongyue. High power laser diodes of 2 μm AlGaAsSb/InGaSb type I quantum-wells. JOURNAL OF SEMICONDUCTORS[J]. 2015, 36(5): 054007-01, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=5456446&detailType=1.
[116] 郝瑞亭, 郭杰, 刘颖, 缪彦美, 徐应强. GaSb/GaAs异质结热光伏电池材料的MBE生长. 人工晶体学报[J]. 2014, 43(5): 1076-1079,1085, https://d.wanfangdata.com.cn/periodical/rgjtxb98201405010.
[117] Jiang, Dongwei, Guo, Fengyun, Xiang, Wei, Hao, Yuehong, Wang, Guowei, Xu, Yingqiang, Yu, Qingjiang, Niu, Zhichuan, Zhao, Liancheng, Guina, M, Gong, H, Niu, Z, Lu, J. Very long-wavelength (similar to 20 mu m) InAs/GaSb superlattice infrared detector with double InSb-like interfaces. INTERNATIONAL SYMPOSIUM ON OPTOELECTRONIC TECHNOLOGY AND APPLICATION 2014: INFRARED TECHNOLOGY AND APPLICATIONSnull. 2014, 9300: [118] Xing Junliang, Zhang Yu, Liao Yongping, Wang Juan, Xiang Wei, Hao Hongyue, Xu Yingqiang, Niu Zhichuan. Investigation of interfaces in AlSb/InAs/Ga0.71In0.29Sb quantum wells by photoluminescence. JOURNAL OF APPLIED PHYSICS[J]. 2014, 116(12): http://ir.semi.ac.cn/handle/172111/26134.
[119] Xing Junliang, Zhang Yu, Liao Yongping, Wang Juan, Xiang Wei, Xu Yingqiang, Wang Guowei, Ren Zhengwei, Niu Zhichuan. Room-Temperature Operation of 2.4 μm InGaAsSb/AlGaAsSb Quantum-Well Laser Diodes with Low-Threshold Current Density. CHINESE PHYSICS LETTERS[J]. 2014, 31(5): 54204-1, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=5163529&detailType=1.
[120] Xing JunLiang, Zhang Yu, Xu YingQiang, Wang GuoWei, Wang Juan, Xiang Wei, Ni HaiQiao, Ren ZhengWei, He ZhenHong, Niu ZhiChuan. High quality above 3-mu m mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy. CHINESE PHYSICS B[J]. 2014, 23(1): http://ir.semi.ac.cn/handle/172111/26445.
[121] Wang, Juan, Xing, JunLiang, Xiang, Wei, Wang, GuoWei, Xu, YingQiang, Ren, ZhengWei, Niu, ZhiChuan. Investigation of high hole mobility In0.41Ga0.59Sb/Al0.91Ga0.09Sb quantum well structures grown by molecular beam epitaxy. APPLIED PHYSICS LETTERS[J]. 2014, 104(5): http://ir.semi.ac.cn/handle/172111/26013.
[122] Hao Hongyue, Xiang Wei, Wang Guowei, Jiang Dongwei, Xu Yingqiang, Ren Zhengwei, He Zhenhong, Niu Zhichuan, Guina M, Gong H, Niu Z, Lu J. Sulfurizing Method for Passivation Used in InAs/GaSb Type-II Superlattice Photodetectors. INTERNATIONAL SYMPOSIUM ON OPTOELECTRONIC TECHNOLOGY AND APPLICATION 2014: INFRARED TECHNOLOGY AND APPLICATIONSnull. 2014, 9300: [123] Xing Junliang, Zhang Yu, Xu Yingqiang, Wang Guowei, Wang Juan, Xiang Wei, Ni Haiqiao, Ren Zhengwei, He Zhenhong, Niu Zhichuan. High quality above 3-μm mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy. CHINESE PHYSICS. B[J]. 2014, 23(1): 017805-1, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=5044609&detailType=1.
[124] Xing JunLiang, Zhang Yu, Liao YongPing, Wang Juan, Xiang Wei, Xu YingQiang, Wang GuoWei, Ren ZhengWei, Niu ZhiChuan. Room-Temperature Operation of 2.4 mu m InGaAsSb/AlGaAsSb Quantum-Well Laser Diodes with Low-Threshold Current Density. CHINESE PHYSICS LETTERS[J]. 2014, 31(5): http://ir.semi.ac.cn/handle/172111/26316.
[125] Wang HongPei, Wang GuangLong, Yu Ying, Xu YingQiang, Ni HaiQiao, Niu ZhiChuan, Gao FengQi. Properties of delta doped GaAs/A1(chi)Ga(1-chi) As 2DEG with embedded InAs quantum dots. ACTA PHYSICA SINICA[J]. 2013, 62(20): https://www.webofscience.com/wos/woscc/full-record/WOS:000327189800059.
[126] 王红培, 王广龙, 喻颖, 徐应强, 倪海桥, 牛智川, 高凤岐. 内嵌InAs量子点的δ掺杂GaAs/Al_x Ga_(1-x) As二维电子气特性分析. 物理学报[J]. 2013, 62(20): 207303-1, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=4963952&detailType=1.
[127] Wang HongPei, Wang GuangLong, Ni HaiQiao, Xu YingQiang, Niu ZhiChuan, Gao FengQi. Quantum-dot gated field effect enhanced single-photon detectors. ACTA PHYSICA SINICA[J]. 2013, 62(19): https://www.webofscience.com/wos/woscc/full-record/WOS:000327007700030.
[128] 王国伟, 牛智川, 徐应强, 王娟, 邢军亮. 长波段InAs/GaSb超品格材料的分子束外延研究. 航空兵器[J]. 2013, 33-37, http://lib.cqvip.com/Qikan/Article/Detail?id=45722438.
[129] Wang, Juan, Wang, GuoWei, Xu, YingQiang, Xing, JunLiang, Xiang, Wei, Tang, Bao, Zhu, Yan, Ren, ZhengWei, He, ZhenHong, Niu, ZhiChuan. Molecular beam epitaxy growth of high electron mobility InAs/AlSb deep quantum well structure. JOURNAL OF APPLIED PHYSICS[J]. 2013, 114(1): https://www.webofscience.com/wos/woscc/full-record/WOS:000321716000014.
[130] Wang Guowei, Xiang Wei, Xu Yingqiang, Zhang Liang, Peng Zhenyu, Lu Yanqiu, Si Junjie, Wang Juan, Xing Junliang, Ren Zhengwei, Niu Zhichuan. Growth and fabrication of a mid-wavelength infrared focal plane array based on type-II InAs/GaSb superlattices. JOURNAL OF SEMICONDUCTORS[J]. 2013, 34(11): 114012-, http://ir.semi.ac.cn/handle/172111/24579.
[131] Wang HongPei, Wang GuangLong, Ni HaiQiao, Xu YingQiang, Niu ZhiChuan, Gao FengQi. Quantum-dot gated field effect enhanced single-photon detectors. ACTA PHYSICA SINICA[J]. 2013, 62(19): https://www.webofscience.com/wos/woscc/full-record/WOS:000327007700030.
[132] 史衍丽, 何雯瑾, 张卫锋, 王羽, 袁俊, 莫境辉, 冯江敏, 胡锐, 邓功荣, 徐应强, 牛智川. 新型Sb基二类超晶格红外探测器. 红外与激光工程[J]. 2012, 41(12): 3141-3144, http://lib.cqvip.com/Qikan/Article/Detail?id=44614991.
[133] Zhan Feng, He JiFang, Shang XiangJun, Li MiFeng, Ni HaiQiao, Xu YingQiang, Niu ZhiChuan. An effective reflectance method for designing broadband antireflection films coupled with solar cells. CHINESE PHYSICS B[J]. 2012, 21(3): 458-462, http://lib.cqvip.com/Qikan/Article/Detail?id=41287257.
[134] 陈燕, 邓爱红, 汤宝, 王国伟, 徐应强, 牛智川. 掺Te的GaSb薄膜分子束外延生长及缺陷特性. 红外与毫米波学报[J]. 2012, 31(4): 298-301, http://lib.cqvip.com/Qikan/Article/Detail?id=42993492.
[135] Zhang, Yu, Wang, Yongbin, Xu, Yingqiang, Xu, Yun, Niu, Zhichuan, Song, Guofeng. High-temperature (T = 80 °c) operation of a 2 μm InGaSb - AlGaAsSb quantum well laser. JOURNAL OF SEMICONDUCTORS[J]. 2012, 33(4): 044006-, http://www.irgrid.ac.cn/handle/1471x/622156.
[136] Shi, Yanli, He, Wenjin, Zhang, Weifeng, Wang, Yu, Yuan, Jun, Mo, Jinghui, Feng, Jiangmin, Hu, Rui, Deng, Gongrong, Xu, Yingqiang, Niu, Zhichuan. Novel Sb-based type-II superlattices infrared detectors. HONGWAI YU JIGUANG GONGCHENG/INFRARED AND LASER ENGINEERING[J]. 2012, 41(12): 3141-3144, http://ir.semi.ac.cn/handle/172111/24042.
[137] Wang, Guowei, Xu, Yingqiang, Wang, Lijuan, Ren, Zhengwei, He, Zhenhong, Xing, Junliang, Niu, Zhichuan. Complete fabrication study of InAs/GaSb superlattices for long-wavelength infrared detection. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2012, 45(26): http://ir.semi.ac.cn/handle/172111/23559.
[138] Zhang Yu, Wang Yongbin, Xu Yingqiang, Xu Yun, Niu Zhichuan, Song Guofeng. High-temperature (T =80℃) operation of a 2 μm InGaSb_AlGaAsSb quantum well laser. JOURNAL OF SEMICONDUCTORS[J]. 2012, 33(4): 044006-1, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=4701832&detailType=1.
[139] 徐应强, 汤宝, 王国伟, 任正伟, 牛智川. 2~5μm InAs/GaSb超晶格红外探测器. 红外与激光工程[J]. 2011, 40(8): 1403-1406, http://lib.cqvip.com/Qikan/Article/Detail?id=39135806.
[140] He JiFang, Wang HaiLi, Shang XiangJun, Li MiFeng, Zhu Yan, Wang LiJuan, Yu Ying, Ni HaiQiao, Xu YingQiang, Niu ZhiChuan. GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2011, 44(33): http://ir.semi.ac.cn/handle/172111/22685.
[141] Xu, Yingqiang, Tang, Bao, Wang, Guowei, Ren, Zhengwei, Niu, Zhichuan. 2-5m InAs/GaSb superlattices infrared photodetector. HONGWAI YU JIGUANG GONGCHENG/INFRARED AND LASER ENGINEERING[J]. 2011, 40(8): 1403-1406, http://ir.semi.ac.cn/handle/172111/23051.
[142] Xu Yingqiang. 2-5 um InAs/GaSb superlattices infrared photodetector. Infrared and Laser Engineering. 2011, [143] He Jifang, Shang Xiangjun, Li Mifeng, Zhu Yan, Chang Xiuying, Ni Haiqiao, Xu Yingqiang, Niu Zhichuan. Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy. 半导体学报[J]. 2011, 32(4): 043004-1, http://lib.cqvip.com/Qikan/Article/Detail?id=37388629.
[144] Niu Zhichuan, He Jifang, Yu Ying, Ni Haiqiao, Xu Yingqiang, Wang Juan, He Zhenhong, Li Mifeng, Zhu Yan. GaAs-based long-wavelength InAs bilayer quantum dots grown by molecular beam epitaxy. 半导体学报[J]. 2011, 32(8): 083001-1, http://lib.cqvip.com/Qikan/Article/Detail?id=38899780.
[145] Wang GuoWei, Xu YingQiang, Guo Jie, Tang Bao, Ren ZhengWei, He ZhenHong, Niu ZhiChuan. Growth and Characterization of GaSb-Based Type-II InAs/GaSb Superlattice Photodiodes for Mid-Infrared Detection. CHINESE PHYSICS LETTERS[J]. 2010, 27(7): http://ir.semi.ac.cn/handle/172111/13477.
[146] 郝瑞亭, 申兰先, 邓书康, 杨培志, 涂洁磊, 廖华, 徐应强, 牛智川. MBE方法在GaAs(001)衬底上外延生长GaSb膜. 功能材料[J]. 2010, 734-736, http://lib.cqvip.com/Qikan/Article/Detail?id=33666672.
[147] Hao, Ruiting, Deng, Shukang, Shen, Lanxian, Yang, Peizhi, Tu, Jielei, Liao, Hua, Xu, Yingqiang, Niu, Zhichuan. Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers. THINSOLIDFILMS[J]. 2010, 519(1): 228-230, http://dx.doi.org/10.1016/j.tsf.2010.08.001.
[148] 王鹏飞, 熊永华, 王海莉, 黄社松, 倪海桥, 徐应强, 贺振宏, 牛智川. GaAs-Based Metamorphic Long-Wavelength InAs Quantum Dots Grown by Molecular Beam Epitaxy. 中国物理快报:英文版[J]. 2009, 26(6): 262-265, http://lib.cqvip.com/Qikan/Article/Detail?id=30538485.
[149] Tang Bao, Xu YingQiang, Zhou ZhiQiang, Hao RuiTing, Wang GuoWei, Ren ZhengWei, Niu ZhiChuan. GaAs Based InAs/GaSb Superlattice Short Wavelength Infrared Detectors Grown by Molecular Beam Epitaxy. CHINESE PHYSICS LETTERS[J]. 2009, 26(2): http://lib.cqvip.com/Qikan/Article/Detail?id=29553102.
[150] Guo Jie, Sun WeiGuo, Peng ZhenYu, Zhou ZhiQiang, Xu YingQiang, Niu ZhiChuan. Interfaces in InAs/GaSb Superlattices Grown by Molecular Beam Epitaxy. CHINESE PHYSICS LETTERS[J]. 2009, 26(4): 221-224, http://lib.cqvip.com/Qikan/Article/Detail?id=29805501.
[151] 郭杰, 孙维国, 彭震宇, 周志强, 徐应强, 牛智川. InAs/GaSbⅡ型超晶格的拉曼和光致发光光谱. 红外与激光工程[J]. 2009, 278-281, http://lib.cqvip.com/Qikan/Article/Detail?id=30194066.
[152] ZHOU ZhiQiang, XU YingQiang, HAO RuiWing, TANG Sao, REN ZhengWei, NIU ZhiChuan. Molecular Beam Epitaxy of GaSb on GaAs Substrates with A1Sb Buffer Layers. CHINESE PHYSICS LETTERS[J]. 2009, 26(1): 343-345, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=3563494&detailType=1.
[153] Wang PengFei, Xiong YongHua, Wang HaiLi, Huang SheSong, Ni HaiQiao, Xu YingQiang, He ZhenHong, Niu ZhiChuan. GaAs-Based Metamorphic Long-Wavelength InAs Quantum Dots Grown by Molecular Beam Epitaxy. CHINESE PHYSICS LETTERS[J]. 2009, 26(6): 262-265, http://lib.cqvip.com/Qikan/Article/Detail?id=30538485.
[154] Zhou ZhiQiang, Xu YingQiang, Hao RuiTing, Tang Bao, Ren ZhengWei, Niu ZhiChuan. Molecular Beam Epitaxy of GaSb on GaAs Substrates with AlSb Buffer Layers. CHINESE PHYSICS LETTERS[J]. 2009, 26(1): http://lib.cqvip.com/Qikan/Article/Detail?id=29552966.
[155] Guo Jie, Chen HuiJuan, Sun WeiGuo, Hao RuiTing, Xu YingQiang, Niu ZhiChuan. Comparison of short period InAs/GaSb superlattices on GaSb and GaAs substrates. SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES[J]. 2009, 52(1): 23-27, http://ir.semi.ac.cn/handle/172111/7409.
[156] 周志强, 徐应强, 郝瑞亭, 汤宝, 任正伟, 牛智川. Molecular Beam Epitaxy of GaSb on GaAs Substrates with AlSb Buffer Layers. 中国物理快报:英文版[J]. 2009, 26(1): 343-345, http://lib.cqvip.com/Qikan/Article/Detail?id=29552966.
[157] Zhou, Zhiqiang, Xu, Yingqiang, Hao, Ruiting, Tang, Bao, Ren, Zhengwei, Niu, Zhichuan. Long-wavelength light emission from self-assembled heterojunction quantum dots. JOURNAL OF APPLIED PHYSICS[J]. 2008, 103(9): http://ir.semi.ac.cn/handle/172111/6672.
[158] 郝瑞亭, 徐应强, 周志强, 任正伟, 牛智川. 2~3μmGaAs基InAs/GaSb超晶格材料. 红外与激光工程[J]. 2007, 35-37, http://lib.cqvip.com/Qikan/Article/Detail?id=1001092648.
[159] Wu BingPeng, Wu DongHai, Ni HaiQiao, Huang SheSong, Zhan Feng, Xiong YongHua, Xu YingQiang, Niu ZhiChuan. Optimization of metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy. CHINESE PHYSICS LETTERS[J]. 2007, 24(12): 3543-3546, http://lib.cqvip.com/Qikan/Article/Detail?id=25952324.
[160] 赵欢, 杜云, 倪海桥, 张石勇, 韩勤, 徐应强, 牛智川, 吴荣汉. 室温连续激射1.59μm GaInNAsSb量子阱激光器. 半导体学报[J]. 2007, 486-488, http://lib.cqvip.com/Qikan/Article/Detail?id=1001096817.
[161] 郝瑞亭, 徐应强, 周志强, 任正伟, 牛智川. GaAs基GaSb体材料及InAs/GaSb超晶格材料的MBE生长. 半导体学报[J]. 2007, 28(7): 1088-1091, http://lib.cqvip.com/Qikan/Article/Detail?id=24955630.
[162] Hao, Ruiting, Xu, Yingqiang, Zhou, Zhiqiang, Ren, Zhengwei, Ni, Haiqiao, He, Zhenhong, Niu, Zhichuan. MBE growth of very short period InAs/GaSb type-II superlattices on (001) GaAs substrates. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2007, 40(21): 6690-6693, http://ir.semi.ac.cn/handle/172111/9212.
[163] Hao, Ruiting, Xu, Yingqiang, Zhou, Zhiqiang, Ren, Zhengwei, Ni, Haiqiao, He, Zhenhong, Niu, Zhichuan. Growth of GaSb layers on GaAs (001) substrate by molecular beam epitaxy. JOURNALOFPHYSICSDAPPLIEDPHYSICS[J]. 2007, 40(4): 1080-1084, http://ir.semi.ac.cn/handle/172111/9558.
[164] 吴兵鹏, 吴东海, 倪海桥, 黄社松, 詹峰, 熊永华, 徐应强, 牛智川. Optimization of Metamorphic InGaAs Quantum Wells on GaAs Grown by Molecular Beam Epitaxy. 中国物理快报:英文版[J]. 2007, 24(12): 3543-3546, http://lib.cqvip.com/Qikan/Article/Detail?id=25952324.
[165] Zhao Huan, Xu YingQiang, Ni HaiQiao, Han Qin, Wu RongHan, Niu ZhiChuan. Enhancement of photoluminescence intensity of GaInNAs/GaAs quantum wells by two-step rapid thermal annealing. CHINESE PHYSICS LETTERS[J]. 2006, 23(9): 2579-2582, http://ir.semi.ac.cn/handle/172111/10422.
[166] 肖红领, 王晓亮, 韩勤, 王军喜, 张南红, 徐应强, 刘宏新, 曾一平, 李晋闽, 吴荣汉. Ⅴ/Ⅲ比和生长温度对RF-MBE InN表面形貌的影响. 半导体学报[J]. 2005, 16-19, http://lib.cqvip.com/Qikan/Article/Detail?id=1000267810.
[167] 苗振华, 徐应强, 张石勇, 吴东海, 赵欢, 牛智川. 快速热退火对高应变InGaAs/GaAs量子阱的影响. 半导体学报[J]. 2005, 26(9): 1749-1752, http://lib.cqvip.com/Qikan/Article/Detail?id=20260620.
[168] 徐应强. 1.3-1.55 m GaInNAs 多量子阱共振腔增强型探测器. 2005, http://ir.semi.ac.cn/handle/172111/5421.
[169] 张石勇, 徐应强, 任正伟, 牛智川, 吴荣汉. 快速热退火对MBE生长的InGaNAs材料结构的影响. 半导体学报[J]. 2005, 36-38, http://lib.cqvip.com/Qikan/Article/Detail?id=1000267815.
[170] 徐晓华, 牛智川, 倪海桥, 徐应强, 张纬, 贺正宏, 韩勤, 吴荣汉, 江德生. 分子束外延生长的(GaAs1-xSbx/InyGa1-yAs)/GaAs量子阱光致发光谱研究. 物理学报[J]. 2005, 54(6): 2950-2954, http://lib.cqvip.com/Qikan/Article/Detail?id=15727378.
[171] 牛智川, 韩勤, 倪海桥, 杨晓红, 徐应强, 杜云, 张石勇, 彭红玲, 赵欢, 吴东海, 李树英, 贺振宏, 任正伟, 吴荣汉. 1.3μm GaAs基GaInNAs量子阱生长与激光器研制. 半导体学报[J]. 2005, 26(9): 1860-1864, http://lib.cqvip.com/Qikan/Article/Detail?id=20260642.
[172] Du Yun, Zhang Shiyong, Peng Hongling, Zhao Huan, Wu Donghai, Li Shuying, He Zhenhong, Ren Zhengwei, Wu Ronghan, Niu Zhichuan, Han Qin, Ni Haiqiao, Yang Xiaohong, Xu Yingqiang. 1.3μm GaAs基GaInNAs量子阱生长与激光器研制. 半导体学报[J]. 2005, 26(9): 1860-1864, http://lib.cqvip.com/Qikan/Article/Detail?id=20260642.
[173] 倪海桥, 徐晓华, 张纬, 徐应强, 牛智川, 吴荣汉. N,Sb和单分子层数对GaAs/GaInNAsSb超晶格性能的影响. 物理学报[J]. 2004, 53(5): 1474-1482, http://ir.semi.ac.cn/handle/172111/17265.
[174] 倪海桥, 徐晓华, 张纬, 徐应强, 牛智川, 吴荣汉. GaAs/GaInNAsSb超晶格性能的影响. 物理学报[J]. 2004, 53(5): 1474-1482, http://lib.cqvip.com/Qikan/Article/Detail?id=9797041.
[175] Zhang Ruikang, Zhou Zhen, Huang Yongqing, Ren Xiaomin, Yang Xiaohong, Xu Yingqiang, Zhang Wei, Dv Yun, Niu zhichuan, Wu Ronghan. Micromechanical Tunable Optical Filter. 半导体学报[J]. 2003, 24(4): 347-350, http://ir.semi.ac.cn/handle/172111/17721.
[176] 张瑞康, 徐应强. 1.3μmGaInNAs量子阱RCE光探测器. 光子学报[J]. 2002, 31(3): 303-307, http://lib.cqvip.com/Qikan/Article/Detail?id=6096713.
[177] Zhang Ruikang, Zhong Yuan, Xu Yingqiang, Zhang Wei, Du Yun, Huang Yongqing, Ren Xiaomin, Pan Zhang, Lin Yaowang. 3μm GaInNAs/GasAs Quantum Well Resonant Cavity Enhanced Photodetector. 光子学报[J]. 2002, 31(3): 303-307, http://ir.semi.ac.cn/handle/172111/18025.
[178] 潘钟, 李联合, 徐应强, 张伟, 林耀望, 张瑞康, 钟源, 任晓敏. GaInNAs/GaAs Multiple-Quantum Well Resonant-Cavity-Enhanced Photodetectors at 1.3μm. 中国物理快报:英文版[J]. 2001, 18(9): 1249-, http://download.archive.nstl.gov.cn:80/download/getArticle.do?md=550838a8b6ebd954457838100d6b280f8a55080640dbd70e2366bae3e0bc71f7a833bfafd5b6d7eff8a514db8b8aca7d86be640917790ca00418874784ae040a.
[179] 杜云, 林耀望, 徐应强, 潘钟, 李联合. 分子束外延生长高应变单量子阱激光器(英文). 半导体学报[J]. 2001, 22(9): 1097-, http://ir.semi.ac.cn/handle/172111/18635.