基本信息
王建禄 男 博导 上海技术物理研究所
电子邮件:jlwang@mail.sitp.ac.cn
通信地址:上海市玉田路500号
邮政编码:200083
研究领域
新型光电探测材料与器件
招生信息
物理学,材料科学,微电子与固体电子学,光学
招生专业
080903-微电子学与固体电子学
070205-凝聚态物理
070205-凝聚态物理
招生方向
非制冷红外探测,新型存储器,有机光电子材料与器件
磁电耦合,量子调控
磁电耦合,量子调控
教育背景
2007-05--2010-01 中国科学院上海技术物理研究所 博士
学历
博士研究生
学位
博士
工作经历
2017.09-至今 中科院上海技术物理研究所 研究员
工作简历
2012-09--今 中国科学院上海技术物理研究所 副研究员
2010-03--2012-09 中国科学院上海技术物理研究所 助理研究员
2010-03--2012-09 中国科学院上海技术物理研究所 助理研究员
社会兼职
2012-10--今 上海物理学会会员
2012-05--今 Applied Surface Science、红外与毫米波学报和Optics Communications审稿人
2012-05--今 Applied Surface Science、红外与毫米波学报和Optics Communications审稿人
专利与奖励
奖励信息
(1) 上海技术物理研究所青年标兵提名奖,研究所(学校)级,2012
(2) 上海技术物理研究所创新项目二等奖,二等奖,研究所(学校)级,2011
(3) 上海市优秀毕业生,部委级,2010
(4) 中国科学院朱李月华优秀博士奖学金,其他级,2010
(2) 上海技术物理研究所创新项目二等奖,二等奖,研究所(学校)级,2011
(3) 上海市优秀毕业生,部委级,2010
(4) 中国科学院朱李月华优秀博士奖学金,其他级,2010
专利成果
(1) 一种高灵敏非制冷红外探测器 ,发明,2011,第1作者,专利号:CN 102003998 B
(2) PVDF有机聚合物薄膜电容器的光刻制备方法,发明,2011,第4作者,专利号:CN 101777424 B
(3) PVDF有机聚合物薄膜电容器,发明,2011,第4作者,专利号:CN 101752087 B
(4) 一种晶硅太阳电池及其制备方法,发明,2011,第4作者,专利号:201110008571.6
(5) 一种铁电隧道结室温红外探测器及制备方法 ,发明,2012,第2作者,专利号:2012100073711.2
(6) 一种背面点接触晶体硅太阳电池及制备方法,发明,2011,第5作者,专利号:201110187549.2
(7) 一种PVDF基有机铁电聚合物纳米线的制备方法,发明,2013,第2作者,专利号:201310469956.1
(8) 一种PVDF基有机铁电聚合物超晶格制备方法,发明,2014,第1作者,专利号:20140020895.5
(2) PVDF有机聚合物薄膜电容器的光刻制备方法,发明,2011,第4作者,专利号:CN 101777424 B
(3) PVDF有机聚合物薄膜电容器,发明,2011,第4作者,专利号:CN 101752087 B
(4) 一种晶硅太阳电池及其制备方法,发明,2011,第4作者,专利号:201110008571.6
(5) 一种铁电隧道结室温红外探测器及制备方法 ,发明,2012,第2作者,专利号:2012100073711.2
(6) 一种背面点接触晶体硅太阳电池及制备方法,发明,2011,第5作者,专利号:201110187549.2
(7) 一种PVDF基有机铁电聚合物纳米线的制备方法,发明,2013,第2作者,专利号:201310469956.1
(8) 一种PVDF基有机铁电聚合物超晶格制备方法,发明,2014,第1作者,专利号:20140020895.5
出版信息
发表论文
[1] Chen, Yan, Wang, Xudong, Wu, Guangjian, Wang, Zhen, Fang, Hehai, Lin, Tie, Sun, Shuo, Shen, Hong, Hu, Weida, Wang, Jianlu, Sun, Jinglan, Meng, Xiangjian, Chu, Junhao. High-Performance Photovoltaic Detector Based on MoTe2/MoS2 Van der Waals Heterostructure. SMALL[J]. 2018, 14(9): https://www.webofscience.com/wos/woscc/full-record/WOS:000426524600015.[2] Wang, Jianlu, Hu, Weida. Recent progress on integrating two-dimensional materials with ferroelectrics for memory devices and photodetectors. CHINESE PHYSICS B[J]. 2017, 26(3): http://202.127.2.71:8080/handle/181331/12288.[3] Tian, Hongzheng, Wang, Xudong, Zhu, Yuankun, Liao, Lei, Wang, Xianying, Wang, Jianlu, Hu, Weida. High performance top-gated ferroelectric field effect transistors based on two-dimensional ZnO nanosheets. APPLIED PHYSICS LETTERS[J]. 2017, 110(4): https://www.webofscience.com/wos/woscc/full-record/WOS:000392837300048.[4] Liu, Chunsen, Yan, Xiao, Wang, Jianlu, Ding, Shijin, Zhou, Peng, Zhang, David Wei. Eliminating overerase Behavior by Designing Energy Band in High-Speed Charge-Trap Memory Based on WSe2. SMALL[J]. 2017, 13(17): https://www.webofscience.com/wos/woscc/full-record/WOS:000400452200014.[5] Xue, Shuai, Zhao, XiaoLin, Wang, JianLu, Tian, BoBo, Huang, Hai, Meng, CaiMin, Liu, Lan, Ye, Lei, Sun, JingLan, Meng, XiangJian, Zhang, XiaoDong, Chu, JunHao. Preparation of La0.67Ca0.23Sr0.1MnO3 thin films with interesting electrical and magnetic properties via pulsed-laser deposition. SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY[J]. 2017, 60(2): https://www.webofscience.com/wos/woscc/full-record/WOS:000394526000016.[6] Wang, Xudong, Liu, Chunsen, Chen, Yan, Wu, Guangjian, Yan, Xiao, Huang, Hai, Wang, Peng, Tian, Bobo, Hong, Zhenchen, Wang, Yutao, Sun, Shuo, Shen, Hong, Lin, Tie, Hu, Weida, Tang, Minghua, Zhou, Peng, Wang, Jianlu, Sun, Jinglan, Meng, Xiangjian, Chu, Junhao, Li, Zheng. Ferroelectric FET for nonvolatile memory application with two-dimensional MoSe2 channels. 2D MATERIALS[J]. 2017, 4(2): https://www.webofscience.com/wos/woscc/full-record/WOS:000396010900005.[7] Wu, Guangjian, Wang, Xudong, Wang, Peng, Huang, Hai, Chen, Yan, Sun, Shuo, Shen, Hong, Lin, Tie, Wang, Jianlu, Zhang, Shangtao, Bian, Lifeng, Sun, Jinglan, Meng, Xiangjian, Chu, Junhao. Visible to short wavelength infrared In2Se3-nanoflake photodetector gated by a ferroelectric polymer. NANOTECHNOLOGY[J]. 2016, 27(36): http://ir.sinano.ac.cn/handle/332007/4637.[8] Zheng, Dingshan, Wang, Jianlu, Hu, Weida, Liao, Lei, Fang, Hehai, Guo, Nan, Wang, Peng, Gong, Fan, Wang, Xudong, Fan, Zhiyong, Wu, Xing, Meng, Xiangjian, Chen, Xiaoshuang, Lu, Wei. When Nanowires Meet Ultrahigh Ferroelectric Field-High-Performance Full-Depleted Nanowire Photodetectors. NANO LETTERS[J]. 2016, 16(4): 2548-2555, https://www.webofscience.com/wos/woscc/full-record/WOS:000374274600062.[9] Chen, Yan, Wang, Xudong, Wang, Peng, Huang, Hai, Wu, Guangjian, Tian, Bobo, Hong, Zhenchen, Wang, Yutao, Sun, Shuo, Shen, Hong, Wang, Jianlu, Hu, Weida, Sun, Jinglan, Meng, Xiangjian, Chu, Junhao. Optoelectronic Properties of Few-Layer MoS2 FET Gated by Ferroelectric Relaxor Polymer. ACS APPLIED MATERIALS & INTERFACES[J]. 2016, 8(47): 32083-32088, http://dx.doi.org/10.1021/acsami.6b10206.[10] Gong, Fan, Luo, Wenjin, Wang, Jianlu, Wang, Peng, Fang, Hehai, Zheng, Dingshan, Guo, Nan, Wang, Jingli, Luo, Man, Ho, Johnny C, Chen, Xiaoshuang, Lu, Wei, Liao, Lei, Hu, Weida. High-Sensitivity Floating-Gate Phototransistors Based on WS2 and MoS2. ADVANCED FUNCTIONAL MATERIALS[J]. 2016, 26(33): 6084-6090, https://www.webofscience.com/wos/woscc/full-record/WOS:000383609100014.[11] Zheng, Dingshan, Fang, Hehai, Wang, Peng, Luo, Wenjin, Gong, Fan, Ho, Johnny C, Chen, Xiaoshuang, Lu, Wei, Liao, Lei, Wang, Jianlu, Hu, Weida. High-Performance Ferroelectric Polymer Side-Gated CdS Nanowire Ultraviolet Photodetectors. ADVANCED FUNCTIONAL MATERIALS[J]. 2016, 26(42): 7690-7696, https://www.webofscience.com/wos/woscc/full-record/WOS:000388166700016.[12] Wang, Xudong, Tang, Minghua, Chen, Yan, Wu, Guangjian, Huang, Hai, Zhao, Xiaolin, Tian, Bobo, Wang, Jianlu, Sun, Shuo, Shen, Hong, Lin, Tie, Sun, Jinglan, Meng, Xiangjian, Chu, Junhao. Flexible graphene field effect transistor with ferroelectric polymer gate. OPTICAL AND QUANTUM ELECTRONICS[J]. 2016, 48(7): https://www.webofscience.com/wos/woscc/full-record/WOS:000379174800001.[13] Huang, Hai, Wang, Xudong, Wang, Peng, Wu, Guangjian, Chen, Yan, Meng, Caimin, Liao, Lei, Wang, Jianlu, Hu, Weida, Shen, Hong, Lin, Tie, Sun, Jinglan, Meng, Xiangjian, Chen, Xiaoshuang, Chu, Junhao. Ferroelectric polymer tuned two dimensional layered MoTe2 photodetector. RSC ADVANCES[J]. 2016, 6(90): 87416-87421, https://www.webofscience.com/wos/woscc/full-record/WOS:000384232600080.[14] Su, Meng, Yang, Zhenyu, Liao, Lei, Zou, Xuming, Ho, Johnny C, Wang, Jingli, Wang, Jianlu, Hu, Weida, Xiao, Xiangheng, Jiang, Changzhong, Liu, Chuansheng, Guo, Tailiang. Side-Gated In2O3 Nanowire Ferroelectric FETs for High-Performance Nonvolatile Memory Applications. ADVANCED SCIENCE[J]. 2016, 3(9): https://www.webofscience.com/wos/woscc/full-record/WOS:000384732300012.[15] B B Tian, J L Wang, S Fusil, Y Liu, X L Zhao, S Sun, H Shen, T Lin, J L Sun, C G Duan, M Bibes, A Barthlmy, B Dkhil, V Garcia, X J Meng, J H Chu. Tunnel electroresistance through organic ferroelectrics. NATURE COMMUNICATIONS[J]. 2016, 7(1): https://doaj.org/article/2ee6601f124c451f8e59846a21af4207.[16] Tian, Bo Bo, Liu, Yang, Chen, Liu Fang, Wang, Jian Lu, Sun, Shuo, Shen, Hong, Sun, Jing Lan, Yuan, Guo Liang, Fusil, Stephane, Garcia, Vincent, Dkhil, Brahim, Meng, Xiang Jian, Chu, Jun Hao. Space-charge Effect on Electroresistance in Metal-Ferroelectric-Metal capacitors. SCIENTIFIC REPORTS[J]. 2015, 5: https://www.webofscience.com/wos/woscc/full-record/WOS:000366454200001.[17] Wang, Xudong, Wang, Peng, Wang, Jianlu, Hu, Weida, Zhou, Xiaohao, Guo, Nan, Huang, Hai, Sun, Shuo, Shen, Hong, Lin, Tie, Tang, Minghua, Liao, Lei, Jiang, Anquan, Sun, Jinglan, Meng, Xiangjian, Chen, Xiaoshuang, Lu, Wei, Chu, Junhao. Ultrasensitive and Broadband MoS2 Photodetector Driven by Ferroelectrics. ADVANCED MATERIALS[J]. 2015, 27(42): 6575-+, https://www.webofscience.com/wos/woscc/full-record/WOS:000364700200002.[18] Tian, B B, Bai, X F, Liu, Y, Gemeiner, P, Zhao, X L, Liu, B L, Zou, Y H, Wang, X D, Huang, H, Wang, J L, Sun, Sh, Sun, J L, Dkhil, B, Meng, X J, Chu, J H. beta phase instability in poly(vinylidene fluoride/trifluoroethylene) thin films near beta relaxation temperature. APPLIED PHYSICS LETTERS[J]. 2015, 106(9): https://www.webofscience.com/wos/woscc/full-record/WOS:000351069900040.[19] Zhao, X L, Tian, B B, Liu, B L, Wang, J L, Han, L, Sun, J L, Meng, X J, Chu, J H. Self-polarization in ultrathin Langmuir-Blodgett polymer films. THIN SOLID FILMS[J]. 2014, 551: 171-173, http://dx.doi.org/10.1016/j.tsf.2013.11.106.[20] Zhao, X L, Wang, J L, Liu, B L, Tian, B B, Zou, Y H, Sun, S, Sun, J L, Meng, X J, Chu, J H. Enhanced dielectric and ferroelectric properties in the artificial polymer multilayers. APPLIED PHYSICS LETTERS[J]. 2014, 104(8): https://www.webofscience.com/wos/woscc/full-record/WOS:000332619100090.[21] Jinglan Sun. 3. Transition of the polarization switching from extrinsic to intrinsic in the ultrathin polyvinylidene fluoride homopolymer films. APPLIED PHYSICS LETTERS. 2014, [22] Liu, B L, Tian, B B, Geiger, S, Hu, Z G, Zhao, X L, Zou, Y H, Wang, J L, Sun, J L, Sun, S, Dkhil, B, Meng, X J, Chu, J H. The intermediate temperature T* revealed in relaxor polymers. APPLIED PHYSICS LETTERS[J]. 2014, 104(22): https://www.webofscience.com/wos/woscc/full-record/WOS:000337161700054.[23] Tian, B B, Zhao, X L, Liu, B L, Wang, J L, Han, Li, Sun, J L, Meng, X J, Chu, J H. Abnormal polarization switching of relaxor terpolymer films at low temperatures. APPLIED PHYSICS LETTERS[J]. 2013, 102(7): https://www.webofscience.com/wos/woscc/full-record/WOS:000315596700054.[24] Wang Jianlu. ransition from relaxor to ferroelectric-like phase in poly(vinylidene?uoride-tri?uoroethylene-chloro?uoroethylene) terpolymer ultrathin films.. Appl. Phys. Lett.. 2011, [25] Liu, P F, Wang, J L, Meng, X J, Yang, J, Dkhil, B, Chu, J H. Huge electrocaloric effect in Langmuir-Blodgett ferroelectric polymer thin films. NEW JOURNAL OF PHYSICS[J]. 2010, 12: http://202.127.1.142/handle/181331/2130.[26] Wang Jianlu. The optical dispersion of Langmuir-Blodgett terploymer films. Ferroelectrics. 2010, [27] Meng, X J, Dkhil, B, Liu, P F, Wang, J L, Sun, J L, Chu, J H. Threshold fields in the dc bias dependence of dielectric responses of relaxor ferroelectric terpolymer films. JOURNAL OF APPLIED PHYSICS[J]. 2009, 106(10): http://202.127.1.142/handle/181331/1559.[28] Meng, X J, Wang, J L, Xu, H S, Sun, J L, Chu, J H. The effect of ac field amplitude on the relaxor behaviors in Langmuir-Blodgett terpolymer films. JOURNAL OF APPLIED PHYSICS[J]. 2009, 106(11): [29] Wang, J L, Meng, X J, Yuan, S Z, Yang, J, Sun, J L, Xu, H S, Chu, J H. High electric tunability of relaxor ferroelectric Langmuir-Blodgett terpolymer films. APPLIED PHYSICS LETTERS[J]. 2008, 93(19): http://202.127.1.142/handle/181331/1269.
科研活动
科研项目
(1) 弛豫铁电聚合物薄膜电学特性研究,主持,研究所(学校)级,2012-06--2014-06
(2) 二维弛豫铁电聚合物的相变研究,主持,国家级,2012-01--2014-12
(3) 高热释电系数弛豫铁电聚合物薄膜电学特性研究,主持,研究所(学校)级,2010-03--2011-02
(2) 二维弛豫铁电聚合物的相变研究,主持,国家级,2012-01--2014-12
(3) 高热释电系数弛豫铁电聚合物薄膜电学特性研究,主持,研究所(学校)级,2010-03--2011-02
参与会议
(1) Tunneling electrical resistance in LaNiO3/P(VDF-TrFE)/Au junctions,2012-11,Jianlu Wang, Xiangjian Meng, Chungang Duan, Anquan Jiang,Jinglan Sun, JuhhaoChu
(2) Transition from relaxor to ferroelectric-like phase in PVDF-based terpolymer ultrathin films,2011-06,Wang, J.L., Yuan S.Z., Tian L., Meng, X.J., Sun, J.L. and Chu, J. H
(3) Transition from relaxor to ferroelectric-like phase in PVDF-based terpolymer ultrathin films,2011-06,Wang, J.L., Yuan S.Z., Tian L., Meng, X.J., Sun, J.L. and Chu, J. H
(2) Transition from relaxor to ferroelectric-like phase in PVDF-based terpolymer ultrathin films,2011-06,Wang, J.L., Yuan S.Z., Tian L., Meng, X.J., Sun, J.L. and Chu, J. H
(3) Transition from relaxor to ferroelectric-like phase in PVDF-based terpolymer ultrathin films,2011-06,Wang, J.L., Yuan S.Z., Tian L., Meng, X.J., Sun, J.L. and Chu, J. H