080903-微电子学与固体电子学
085400-电子信息

微电子学与固体电子学
半导体材料与光电子器件

1989-02--1994-05   瑞典哥德堡大学   博士学位
1985-09--1988-06   复旦大学   硕士学位
1981-09--1985-06   复旦大学   学士学位

   

2012-12~2018-12,中国科学院上海微系统与信息技术研究所, 研究员
2012-12~2019-12,上海科技大学, 特聘教授
2008-12~2028-11,瑞典查尔姆斯理工大学, 教授
1999-06~2008-11,瑞典查尔姆斯理工大学, 副教授
1994-07~1999-05,瑞典查尔姆斯理工大学, 研究助理
1989-02~1994-05,瑞典哥德堡大学, 博士学位
1985-09~1988-06,复旦大学, 硕士学位
1981-09~1985-06,复旦大学, 学士学位

半导体器件物理学

   

（ 1 ） 一种基于铋元素的GaAs基室温红外发光材料及其制备方法, 2018, 第 1 作者, 专利号: CN 2015106270367

（ 2 ） 一种基于稀铋磷化物材料的中间带太阳能电池结构, 2017, 第 1 作者, 专利号: ZL2015.1.0149341.X

（ 3 ） 一种二维锡烯材料的制备方法, 2017, 第 2 作者, 专利号: 201610436234.X

（ 4 ） 一种单片原位形成图形衬底的方法, 2017, 第 2 作者, 专利号: ZL2013.1.0629211.7

（ 5 ） 基于硅基三维纳米线阵列的全环栅互补金属-氧化物-半导体场效应晶体管, 2017, 第 1 作者, 专利号: ZL2013.1.0736928.1

（ 6 ） 一种基于稀铋磷化物材料的多结太阳能电池结构, 2017, 第 1 作者, 专利号: ZL2015.1.0151566.9

（ 7 ） 一种边发射半导体激光器腔面的非解理制备方法, 2016, 第 2 作者, 专利号: ZL2013.1.0703155.7

（ 8 ） 基于铋元素的非矩形III-V族半导体量子阱的制备方法, 2016, 第 1 作者, 专利号: ZL2013.1.0264472.3

（ 9 ） 一种发光二极管及光学相干层析成像系统, 2016, 第 2 作者, 专利号: ZL2014.1.0052014.8

（ 10 ） 一种III-VOI结构的制备方法, 2016, 第 5 作者, 专利号: ZL 2012.1.0559716.6

（ 11 ） 一种GaAsOI结构及III-VOI结构的制备方法”, 2015, 第 5 作者, 专利号: ZL2012.1.0559663.8

（ 12 ） Graphene fabrication by CVD using liquid catalysts一种液态催化剂辅助化学气相沉积制备石墨烯的方法, 2015, 第 1 作者, 专利号: No.201210096785.8

（ 13 ） 单片集成具有晶格失配的晶体模板及其制作方法, 2014, 第 1 作者, 专利号: No.201110394410.5

（ 14 ） A method for graphene synthesis一种制备石墨烯的方法, 2013, 第 1 作者, 专利号: No.201210120753.7

（ 15 ） 一种提高稀铋半导体材料稳定性的而方法, 2013, 第 1 作者, 专利号: ZL201310264486.5

   

（1） The electron-phonon interaction at deep Bi2Te3-semiconductor interfaces from Brillouin light scattering, The electron-phonon interaction at deep Bi2Te3-semiconductor interfaces from Brillouin light scattering, Sci. Rep., 2017, 第 5 作者
（2） Induced unconventional superconductivity on the surface states of Bi2Te3 topological insulator, Induced unconventional superconductivity on the surface states of Bi2Te3 topological insulator, Nat. Comm., 2017, 第 7 作者
（3） Effect of Annealing on the Structural Properties of GeSn Thin Film Grown by MBE, Effect of Annealing on the Structural Properties of GeSn Thin Film Grown by MBE, AIP Adv., 2017, 通讯作者
（4） Photoluminescence of InGaAs/GaAsBi/InGaAs type-II quantum wells grown by gas source molecular beam epitaxy, Photoluminescence of InGaAs/GaAsBi/InGaAs type-II quantum wells grown by gas source molecular beam epitaxy, Semicond. Sic. Technol., 2017, 通讯作者
（5） Designof high-Q compact passive ring resonators via incorporating a loss-compensated structure for high performance angular velocity sensing in monolithic integrated-optical-gyroscopes, Designof high-Q compact passive ring resonators via incorporating a loss-compensated structure for high performance angular velocity sensing in monolithic integrated-optical-gyroscopes, IEEE Sensors J., 2017, 通讯作者
（6） Novel type II InGaAs/GaAsBi quantum well for longer wavelength emission, Novel type II InGaAs/GaAsBi quantum well for longer wavelength emission, J. Alloy Compounds, 2017, 通讯作者
（7） Bi2Te3 photoconductive detectors on Si, Bi2Te3 photoconductive detectors on Si, Appl. Phys. Lett., 2017, 通讯作者
（8） High-Transparency Al/Bi2Te3 Double-Barrier Heterostructures, High-Transparency Al/Bi2Te3 Double-Barrier Heterostructures, IEEE Trans. Appl. Supercond., 2017, 第 5 作者
（9） Electronic and Optical Properties of Arsenene Under Uniaxial Strain, Electronic and Optical Properties of Arsenene Under Uniaxial Strain, IEEE J. Sel. Top. Quantum Electron., 2017, 通讯作者
（10） Spin injection and helicity control of surface spin photocurrent in a three dimensional topological insulator, Spin injection and helicity control of surface spin photocurrent in a three dimensional topological insulator, Nat. Comm., 2017, 第 3 作者
（11） Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application, Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application, Crystals 7, 2017, 通讯作者
（12） Highly tensile-strained sub-monolayer Ge nanostructure on GaSb studied by scanning tunneling microscopy, Highly tensile-strained sub-monolayer Ge nanostructure on GaSb studied by scanning tunneling microscopy, Mater. Res. Exp., 2017, 通讯作者
（13） Negative thermal quenching of below-bandgap photoluminescence in InPBi, Negative thermal quenching of below-bandgap photoluminescence in InPBi, Appl. Phys. Lett., 2017, 通讯作者
（14） Growth and electrical properties of high-quality InGaAsBi thin films using gas source molecular beam epitaxy, Growth and electrical properties of high-quality InGaAsBi thin films using gas source molecular beam epitaxy, Jpn. J. Appl. Phys., 2017, 第 4 作者
（15） Structural properties of GeSn thin films grown by molecular beam epitaxy, Structural properties of GeSn thin films grown by molecular beam epitaxy, AIP Adv., 2017, 通讯作者
（16） Tunable band gaps in stanene/MoS2 heterostructures, Tunable band gaps in stanene/MoS2 heterostructures, J. Mat. Sci., 2017, 通讯作者
（17） Structural and elastic properties of zinc-blende and wurtzite InN1-xBix alloys, Structural and elastic properties of zinc-blende and wurtzite InN1-xBix alloys, J. Alloy Compound., 2017, 通讯作者
（18） The effect of Bi composition on the electrical properties of InP1-xBix, The effect of Bi composition on the electrical properties of InP1-xBix, Sci. China-Phys. Mech. Astron., 2017, 第 10 作者
（19） Facile synthesis of highly graphitized nitrogen-doped carbon dots and carbon sheets with solid-state white-light emission, Facile synthesis of highly graphitized nitrogen-doped carbon dots and carbon sheets with solid-state white-light emission, Mat. Lett., 2017, 通讯作者
（20） Efficiency improvement of GaInP solar cells by broadband omnidirectional antireflection through dielectric composite nanostructures, Efficiency improvement of GaInP solar cells by broadband omnidirectional antireflection through dielectric composite nanostructures, Sol. Energy Mater. Sol. Cells, 2017, 通讯作者
（21） 1.142 µm GaAsBi/GaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy, 1.142 µm GaAsBi/GaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy, ACS Photonics, 2017, 通讯作者
（22） Quasiparticle and optical properties of strained stanene and stanane, Quasiparticle and optical properties of strained stanene and stanane, Sci. Rep., 2017, 通讯作者
（23） Theoretical Investigation of Biaxially Tensile-Strained Germanium Nanowires, Theoretical Investigation of Biaxially Tensile-Strained Germanium Nanowires, Nanoscale Res. Lett., 2017, 通讯作者
（24） Incorporation of Bi atoms in InP studied at the atomic scale by cross-sectional scanning tunneling microscopy, Incorporation of Bi atoms in InP studied at the atomic scale by cross-sectional scanning tunneling microscopy, Phys. Rev. Mater., 2017, 通讯作者
（25） Vapor-solid-solid grown Ge nanowires at integrated circuit compatible temperature by molecular beam epitaxy, Vapor-solid-solid grown Ge nanowires at integrated circuit compatible temperature by molecular beam epitaxy, J. Appl. Phys., 2017, 通讯作者
（26） Closing the bandgap for III-V nitrides toward mid-infrared and THz applications, Closing the bandgap for III-V nitrides toward mid-infrared and THz applications, Sci. Rep., 2017, 通讯作者
（27） Electronic and excitonic properties of two-dimensional and bulk InN crystals, Electronic and excitonic properties of two-dimensional and bulk InN crystals, RSC Adv., 2017, 通讯作者
（28） Influence of Growth Conditions on Bi Concentration in GaAsBi Thin Films Grown by GSMBE, Influence of Growth Conditions on Bi Concentration in GaAsBi Thin Films Grown by GSMBE, J. Mat. Sci. Eng, 2017, 通讯作者
（29） Nanoscale distribution of Bi atoms in InP1−xBix, Nanoscale distribution of Bi atoms in InP1−xBix, Sci. Rep., 2017, 通讯作者
（30） Structural, electronic, vibrational and optical properties of Bi-n clusters, Structural, electronic, vibrational and optical properties of Bi-n clusters, Mod. Phys. Lett., 2017, 通讯作者
（31） Growth mode of tensile-strained Ge quantum dots grown by molecular beam epitaxy, Growth mode of tensile-strained Ge quantum dots grown by molecular beam epitaxy, J. Phys. D, 2017, 通讯作者
（32） Auger recombination at low temperatures in InGaAs/InAlAs quantum well probed by photoluminescence, Auger recombination at low temperatures in InGaAs/InAlAs quantum well probed by photoluminescence, J. Lumin, 2016, 第 4 作者
（33） Growth and material properties of InPBi thin films using gas source molecular beam epitaxy, Growth and material properties of InPBi thin films using gas source molecular beam epitaxy, J. Alloys Compounds, 2016, 通讯作者
（34） Detailed study of the influence of InGaAs matrix on the strain reduction in the InAs dot-in-well structure, Detailed study of the influence of InGaAs matrix on the strain reduction in the InAs dot-in-well structure, Nanoscale Res. Lett, 2016, 通讯作者
（35） Bi-induced acceptor level responsible for partial compensation of native free electron density in InP1-xBix dilute bismide alloys, Bi-induced acceptor level responsible for partial compensation of native free electron density in InP1-xBix dilute bismide alloys, J. Phys. D-Appl. Phys, 2016, 通讯作者
（36） Heteroepitaxy growth of GaAsBi on Ge(100) substrate by gas source molecular beam epitaxy, Heteroepitaxy growth of GaAsBi on Ge(100) substrate by gas source molecular beam epitaxy, Appl. Phys. Exp, 2016, 通讯作者
（37） The effect of Bi-In hetero-antisite defects in In1-xPBix alloy, The effect of Bi-In hetero-antisite defects in In1-xPBix alloy, Mod. Phys. Lett. B, 2016, 通讯作者
（38） Influence of GaAsBi matrix on optical and structural properties of InAs quantum dots, Influence of GaAsBi matrix on optical and structural properties of InAs quantum dots, Nanoscale Res. Lett., 2016, 通讯作者
（39） Anomalous photoluminescence in InP1-xBix, Anomalous photoluminescence in InP1-xBix, Sci. Rep, 2016, 通讯作者
（40） Bismuth-content-dependent polarized Raman spectrum of InPBi alloy, Bismuth-content-dependent polarized Raman spectrum of InPBi alloy, Chin. Phys. B, 2016, 通讯作者
（41） Structural properties and phase transition of Na adsorption on monolayer MoS2, Structural properties and phase transition of Na adsorption on monolayer MoS2, Nanoscale Res. Lett., 2016, 通讯作者
（42） Optical properties and band bending of InGaAs/GaAsBi/InGaAs type-II quantum well grown by gas source molecular beam epitaxy, Optical properties and band bending of InGaAs/GaAsBi/InGaAs type-II quantum well grown by gas source molecular beam epitaxy, J. Appl. Phys., 2016, 通讯作者
（43） Structural and electronic properties of two-dimensional hybrid stanene and graphene heterostructure, Structural and electronic properties of two-dimensional hybrid stanene and graphene heterostructure, Nanoscale Res. Lett., 2016, 通讯作者
（44） External electric field effect on exciton binding energy in InGaAsP/InP cylindrical quantum wires, External electric field effect on exciton binding energy in InGaAsP/InP cylindrical quantum wires, Phys. B Condensed Mat., 2016, 通讯作者
（45） Photoluminescence probing of interface evolution with annealing in InGa(N)As/GaAs single quantum wells, J. Appl. Phys., 2015, 通讯作者
（46） Bismuth effects on electronic levels in GaSb(Bi)/AlGaSb quantum wells probed by infrared photoreflectance, Chin. Phys. Lett., 2015, 通讯作者
（47） Thermoelectric properties of SnSe compound, J. Alloys and Compound, 2015, 通讯作者
（48） Novel InGaPBi Single Crystal Grown by Molecular Beam Epitaxy, Appl. Phys. Exp., 2015, 通讯作者
（49） Effect of rapid thermal annealing on InP1-xBix grown by molecular beam epitaxy, Semicond. Sci. Technol., 2015, 通讯作者
（50） Raman spectroscopy of epitaxial topological insulator Bi2Te3 thin films on GaN substrates, Mod. Phys. Lett. B, 2015, 通讯作者
（51） Growth of semiconductor alloy InGaPBi on InP by molecular beam epitaxy, Semicond. Sci. Technol, 2015, 通讯作者
（52） Raman Scattering studies of dilute InP1-xBix alloys reveal unusually strong oscillator strength for Bi-induced modes, Semicond. Sci. Technol., 2015, 通讯作者
（53） Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy, Nanoscale Res. Lett., 2014, 通讯作者
（54） Mobility enhancement in tensile-strained Ge grown on InAlP metamorphic templates, Appl. Surf. Sci, 2014, 通讯作者
（55） Mobility enhancement in tensile-strained Ge grown on InAlP metamorphic templates, Appl. Surf. Sci, 2014, 通讯作者
（56） Thermoelectric properties of quaternary (Bi,Sb)2(Te,Se)3 compound, J. Alloys and Compound, 2014, 通讯作者
（57） First-principles study on electronic and magnetic properties of (Mn,Fe)-codoped ZnO, J. Magnetism and Magnetic Mat, 2014, 通讯作者
（58） Strain induced composition profile in InGaN/GaN core-shell nanowires, Solid State Commun., 2014, 通讯作者
（59） Investigation on structural, electronic and magnetic properties of Mn-doped Ga12N12 clusters, J. Mat. Sci., 2014, 通讯作者
（60） Magnetic properties in (Mn,Fe)-codoped ZnO nanowire, Thin Solid Film, 2014, 通讯作者
（61） Strain and localization effects in InGaAs(N) quantum wells: tuning the magnetic response, J. Appl. Phys., 2014, 通讯作者
（62） Contactless electronreflectance and theoretical studies of band gap and spin-orbit splitting in InP1-xBix dilute bismide with x≤0.034, Appl. Phys. Lett., 2014, 通讯作者
（63） Template-less Synthesis of Hollow Carbon Nanospheres for White Light-Emitting Diodes, Mat. Lett., 2014, 通讯作者
（64） Point defect balance in epitaxial GaSb, Appl. Phys. Lett., 2014, 通讯作者
（65） InPBi single crystals grown by molecular beam epitaxy, Sci. Rep., 2014, 通讯作者
（66） Structural and electronic properties of InPBi alloys, Mod. Phys. Lett., 2014, 通讯作者
（67） Electronic and optical properties of InGaAs/GaAs quantum dots with tunable aspect-ratio, Mod. Phys. Lett., 2014, 通讯作者
（68） A novel semiconductor compatible path for nano-graphene synthesis using CBr4 precursor and Ga catalyst, Sci. Rep, 2014, 通讯作者
（69） Vanadium doping on magnetic properties of H-passivated ZnO, J. Mat. Sci., 2014, 通讯作者
（70） Structural and electronic properties of Wurtzite GaX (X=N, P, As, Sb, Bi) under in-plain biaxial strains, Superlatt. Microstruct., 2014, 通讯作者
（71） Phase transition of bismuth telluride thin films grown by MBE, Appl. Phys. Exp. 7, 2014, 通讯作者
（72） Raman enhancement by graphene-Ga2O3 2D bilayer film, Nanoscale Res. Lett., 2014, 通讯作者
（73） Bismuth alloying properties in GaAs nanowires, J. Solid State Chem., 2013, 通讯作者
（74） Structural properties and energetics of GaAs nanowires, Physica E-Low-Dimensional Systems & Nanostructures, 2013, 通讯作者
（75） A theoretical investigation on thermoelectric performance of ternary (Bi1-xSbx)2Te3 compound, J. Mat. Sci., 2013, 通讯作者
（76） Growth optimization, strain compensation and structure design of InAs/GaSb type-II superlattices for mid-wavelength infrared imaging, Cryst. Structure Theory and Appl. 2, 2013, 通讯作者
（77） Shallow-terrace-like interface in dilute-bismuth GaSb/AlGaSb single quantum wells evidenced by photoluminescence, J. Appl. Phys., 2013, 通讯作者
（78） Molecular beam epitaxy growth of InSb1-xBix thin films, J. Cryst. Growth, 2013, 通讯作者
（79） High quality strain-compensated multiple InAs/AlGaNAs quantum dot layers grown by MBE, Phys. Status Solidi, 2013, 通讯作者
（80） Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photoluminescence, Chinese Physics B 22, 2013, 通讯作者
（81） Chemical vapor deposition of graphene on liquid metal catalysts, Carbon 53, 2013, 通讯作者
（82） Electronic Structure and Thermoelectric Properties of Bi2(Te1-xSex)3 compound, Solid State Commun., 2013, 通讯作者

“Lattice Engineering, Technologies and Applications”, Pan Stanford, 2013-01, 第 1 作者

   

（ 1 ） 绝缘体上III-V族化合物衬底材料制备技术研究, 负责人, 中国科学院计划, 2013-01--2015-12
（ 2 ） 2.8-4.0微米室温高性能半导体激光器材料和器件制备研究, 负责人, 国家任务, 2014-01--2018-12
（ 3 ） 中科院****创新人才, 负责人, 中国科学院计划, 2013-01--2015-12
（ 4 ） 应用于非制冷激光器的新型稀铋半导体材料研究, 负责人, 国家任务, 2013-10--2018-12
（ 5 ） 微纳系统材料、制造与器件物理, 参与, 国家任务, 2014-01--2016-12
（ 6 ） III-V和Ge集成高迁移率材料工程, 参与, 中国科学院计划, 2013-01--2015-12

（1）TBD   20th International Conference on Transparent Optical Networks   2018-07-01
（2）Near infrared GaAsBi quantum well lasers   SPIE Photonics Europe 2018. Strassbourg   2018-04-22
（3）Light emitting devices of dilute bismides   8th International Workshop on Bi-containing Semiconductors   2017-07-23
（4）Novel group IV nano-and micro-structures for light sources on silicon   2017 IEEE Photonics Society Summer Topicals Meeting Series   2017-07-10
（5）Electrically pumped GaAsBi laser diodes   19th International Conference on Transparent Optical Networks   2017-07-02
（6）Recent progress on dilute bismides   Global Congress & Expo on Materials Science and Nanoscience   2016-10-24
（7）Dilute III-PBi and III-SbBi for IR applications   18th International Conference on Transparent Optical Networks   2016-07-10
（8）III-V light emitters on Ge and Si substrates   International Union of Materials Research Societies – International Conference on Electronic Materials (IUMRS-ICEM2016)   2016-07-04