基本信息
艾尔肯·阿不都瓦衣提 男 博导 云南师范大学
email: erkin@ms.xjb.ac.cn
address: 乌鲁木齐市北京南路40-1号
postalCode: 830011
email: erkin@ms.xjb.ac.cn
address: 乌鲁木齐市北京南路40-1号
postalCode: 830011
招生信息
招生专业
080903-微电子学与固体电子学080901-物理电子学
招生方向
新型光电材料与器件,辐射物理
教育背景
2005-04--2008-12 芬兰阿尔托大学微纳米系 博士1999-09--2002-06 中国科学院新疆理化技术研究所 硕士1992-09--1997-07 北京大学技术物理系 学士
工作经历
工作简历
2015-01~现在, 中国科学院新疆理化技术研究所, 研究员2009-01~2014-12,芬兰阿尔托大学微纳米系, 博士后2005-04~2008-12,芬兰阿尔托大学微纳米系, 博士2002-07~2005-03,中国科学院新疆理化技术研究所, 助理研究员1999-09~2002-06,中国科学院新疆理化技术研究所, 硕士1997-09~1999-08,中国科学院新疆物理所, 实习研究员1992-09~1997-07,北京大学技术物理系, 学士
出版信息
发表论文
(1) Effects of proton irradiation on upright metamorphic GaInP/GaInAs/Ge triple junction solar cells, Solar Energy Materials and Solar Cells, 2018, 第 1 作者(2) Electron irradiation study of room-temperature wafer-bonded four-junction solar cell grown by MBE, Solar Energy Materials and Solar Cells, 2017, 第 6 作者(3) 1-MeV electron irradiation effects on InGaAsP/InGaAs double-junction solar cell and its component subcells, SCIENCE CHINA Information Sciences, 2017, 第 4 作者(4) 1MeV电子辐照下晶格匹配与晶格失配GaInP/GaInAs/Ge三结太阳电池辐射效应研究, 发光学报, 2017, 第 2 作者(5) Yield and leakage currents of large area lattice matched InP/InGaAs heterostructures, Journal of Applied Physics, 2014, 116:083105, 2014, 第 2 作者(6) Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces, Applied Surface Science, 2014, 314:570-574, 2014, 第 4 作者(7) Temperature dependence of droop onset in optically pumped intrinsic InGaAs/InP heterostructures, Applied Physics Letters, 2013, 102:081123, 2013, 第 2 作者(8) Optical properties of electron beam andgamma-ray irradiated InGaAs/GaAs quantum well and quantum dot structures, Radiation Physics and Chemistry, 2012, 83:42-47, 2012, 第 1 作者(9) Characterization of InGaAs/GaNAsstrain-compensated quantum dot solar cells, Physica Status Solidi (c), 2012, 9:972-974, 2012, 通讯作者(10) Enhanced 1.3 μm luminescence from InGaAs self-assembled quantum dots with a GaAsN strain-compensating layer, Semiconductor Science and Technology, 2011, 26:085029, 2011, 第 2 作者(11) GaAs surface passivation by plasma enhanced atomiclayer deposited aluminum nitrides, Applied Surface Science, 2010, 256:7434-7437, 2010, 第 3 作者(12) InAs island-to-ring transformation by a partial capping layer, Journal of Crystal Growth, 2008, 310:5077, 2008, 第 1 作者(13) Transformation of InAs islands to quantum ring structures by metalorganic vapor phase epitaxy, Nanotechnology, 2008, 19:245304, 2008, 第 1 作者(14) Self-assembled InAs island formation on GaAs (110) by metalorganic vapor phase epitaxy, Applied Surface Science, 2008, 254:2072, 2008, 第 1 作者(15) Passivation of GaAs surface by atomic-layer-deposited titanium nitride, Applied Surface Science, 2008, 254:5385, 2008, 第 2 作者(16) Growth and surface passivation of near-surface InGaAs quantum wells on GaAs (110), Journal of Crystal Growth, 2007, 309:18, 2007, 第 1 作者(17) GaAs surface passivation by ultra-thin epitaxial GaP layer and surface As-P exchange, Applied Surface Science, 2007, 253:6232, 2007, 第 1 作者(18) Effect of surface states on carrier dynamics in InGaAsP/InP stressor quantum dots, Nanotechnology, 2006, 17:2181, 2006, 通讯作者(19) Comparison of epitaxial thin layer GaN and InP passivations on InGaAs/GaAs near-surface quantum wells, Applied Physics Letter, 2006, 88:221112, 2006, 第 1 作者
科研活动
科研项目
( 1 ) ****, 负责人, 国家任务, 2015-01--2018-04( 2 ) 稀氮Ga(In)AsN材料的光电特性辐射损伤研究, 负责人, 研究所自主部署, 2015-01--2019-12( 3 ) 空间用高效四结太阳电池器件及辐射加固方法研究, 负责人, 国家任务, 2016-01--2020-12