黄森  男  硕导  中国科学院微电子研究所
电子邮件: huangsen@ime.ac.cn
通信地址: 北京市朝阳区北土城西路3号
邮政编码: 100029

研究领域

III族氮化物半导体功率电子器件的先进制备工艺,电路模块设计及器件物理研究

1, 高性能GaN基功率电子和射频微波器件研究:Si基GaN基电子器件增强型技术;高频GaN基功率器件设计;GaN基功率电子器件先进微纳加工和CMOS兼容工艺;新结构,新机理GaN基HEMT和MIS-HEMT器件研制。

2, III族氮化物电子器件器件物理研究:介质层/氮化物界面态物理机制和抑制技术;GaN基功率器件高压应力和动态强场下的可靠性失效机理; III族氮化物电子器件先进表征技术与深能级物理研究。




招生信息

   
招生专业
080903-微电子学与固体电子学
085208-电子与通信工程
招生方向
GaN基功率与射频器件
GaN基功率器件与集成
GaN基电子器件物理与表征

教育背景

2004-09--2009-07   北京大学   凝聚态物理博士

工作经历

   
工作简历
2009-08~2012-08,香港科技大学, 博士后

教授课程

学术道德与学术写作规范-分论

专利与奖励

   
奖励信息
(1) CSMANTECH国际会议最佳学生论文奖, 特等奖, 其他, 2014
(2) CSMANTECH国际会议最佳学生论文奖, 特等奖, 其他, 2013
专利成果
[1] 黄森, 冯超, 栾田田, 蒋其梦, 魏珂, 王鑫华, 刘新宇. MIS晶体管. CN202311358353.4, 2023-10-19.
[2] 张寒, 黄森, 蒋其梦, 王鑫华, 魏珂, 刘新宇. 低栅漏电的增强型GaN HEMT 及其制备方法. CN202311337414.9, 2023-10-16.
[3] 王鑫华, 刘新宇, 高润华, 邢湘杰, 黄森, 魏珂. 一种薄膜半导体与金刚石复合衬底及其制造方法. CN: CN116705594A, 2023-09-05.
[4] 王鑫华, 邢湘杰, 高润华, 刘新宇, 黄森, 魏珂. 一种基于临时载体的SiC/金刚石复合衬底制造方法. CN: CN116666199A, 2023-08-29.
[5] 蒋其梦, 王宇豪, 黄森, 王鑫华, 刘新宇. 晶体管制备方法及晶体管. CN: CN116544112A, 2023-08-04.
[6] 黄森, 金昊, 蒋其梦, 王鑫华, 刘新宇. 氮化镓基CMOS制备方法及氮化镓基CMOS结构. CN: CN116544189A, 2023-08-04.
[7] 黄森, 施雯, 王鑫华, 魏珂, 刘新宇. 基于氮化镓基增强型器件的探测器及其制作方法. CN: CN112345614B, 2023-07-21.
[8] 黄森, 蒋其梦, 戴心玥, 王鑫华, 刘新宇. 折叠沟道氮化镓基场效应晶体管及其制备方法. CN202310431333.9, 2023-04-21.
[9] 何晓强, 魏珂, 刘果果, 郑英奎, 黄森, 王鑫华, 张一川, 张昇, 张睿哲. 一种高线性HEMT器件及其制备方法. CN: CN115966603A, 2023-04-14.
[10] 刘春雨, 王鑫华, 黄森, 魏珂, 刘新宇. GaN MIS-HEMT大信号PSPICE模型的建模方法及模型. CN: CN109933897B, 2023-04-07.
[11] 赵瑞, 黄森, 毕岚, 王鑫华, 魏珂, 刘新宇. GaN基功率晶体管结构及其制备方法. CN: CN111312815B, 2023-03-31.
[12] 刘新宇, 黄森, 黄健, 王鑫华, 颜呈祥. GaN基欧姆接触结构及其制备方法、HEMT器件和电子设备. CN: CN115295622A, 2022-11-04.
[13] 张尚伟, 魏珂, 张昇, 陈晓娟, 张一川, 郑英奎, 黄森, 王鑫华, 刘新宇. 一种半导体器件及其制造方法. CN: CN115132837A, 2022-09-30.
[14] 王鑫华, 刘新宇, 黄森, 魏珂. 一种复合衬底及其制备方法和氮化镓器件. CN202210994473.2, 2022-08-18.
[15] 栾田田, 黄森, 刘新宇, 蒋其梦, 王鑫华, 魏珂. 氮化镓基增强型射频器件及其制备方法. CN202210915204.2, 2022-08-02.
[16] 王鑫华, 刘新宇, 黄森, 魏珂, 蒋其梦, 殷海波, 樊捷, 邓可心, 景冠军. 一种基于介质图形化技术的氮化镓器件及其制备方法. CN: CN114628513A, 2022-06-14.
[17] 母凤文, 王鑫华, 黄森, 魏珂, 刘新宇. 一种多层半导体材料结构及制备方法. CN: CN114628229A, 2022-06-14.
[18] 蒋其梦, 姬源, 黄森, 王鑫华, 刘新宇. 横向氮化镓基功率器件及其制备方法. CN2022106284834, 2022-06-06.
[19] 黄森, 王鑫华, 刘新宇, 王元琨, 魏珂. GaN-BASED SUPERJUNCTION VERTICAL POWER TRANSISTOR AND MANUFACTURING METHOD THEREOF. US16/635,323, 2021-09-14.
[20] 黄森, 施雯, 王鑫华, 魏珂, 刘新宇. 基于氮化镓基增强型器件的探测器及其制作方法. CN: CN112345614A, 2021-02-09.
[21] 郭富强, 黄森, 王鑫华, 魏珂, 刘新宇. 氮化镓基电子器件及其制作方法. CN: CN112259459A, 2021-01-22.
[22] 汪宁, 黄森, 王鑫华, 王大海. 一种基于石英玻璃外延GaN的工艺改进方法. CN: CN111540668A, 2020-08-14.
[23] 王鑫华, 刘新宇, 黄森, 蒋浩杰, 魏珂, 殷海波, 樊捷. 一种匹配氮化镓材料的低界面态复合介质结构及制备方法. CN: CN111509036A, 2020-08-07.
[24] 汪宁, 黄森, 王鑫华, 王大海. 一种基于硅衬底外延GaN的工艺改进方法. CN: CN111508838A, 2020-08-07.
[25] 赵瑞, 黄森, 毕岚, 王鑫华, 魏珂, 刘新宇. GaN基功率晶体管结构及其制备方法. CN: CN111312815A, 2020-06-19.
[26] 刘新宇, 王成森, 殷海波, 黄森, 王鑫华, 魏珂, 黄健, 张超, 吴耀辉. 一种氮化镓电子器件的复合介质结构. CN: CN210467851U, 2020-05-05.
[27] 刘新宇, 王成森, 殷海波, 黄森, 王鑫华, 魏珂, 黄健, 张超, 吴耀辉. 一种氮化镓电子器件的复合介质结构及制备方法. CN: CN110491939A, 2019-11-22.
[28] 刘新宇, 王成森, 黄森, 王鑫华, 康玄武, 魏珂, 黄健. GaN基垂直型功率晶体管器件. CN: CN209119111U, 2019-07-16.
[29] 黄森, 王鑫华, 刘新宇, 魏珂, 施雯. P型沟道GaN基结构及电子器件. CN: CN109962100A, 2019-07-02.
[30] 刘春雨, 王鑫华, 黄森, 魏珂, 刘新宇. GaN MIS-HEMT大信号PSPICE模型的建模方法及模型. CN: CN109933897A, 2019-06-25.
[31] 王元琨, 黄森, 王鑫华, 殷海波, 魏珂, 刘新宇. GaN基超结型垂直功率晶体管及其制作方法. CN: CN109888012A, 2019-06-14.
[32] 刘新宇, 王成森, 王鑫华, 王泽卫, 黄森, 康玄武, 魏珂, 黄健. 一种基于纳米沟道阵列的薄势垒GaN SBD器件. CN: CN208873725U, 2019-05-17.
[33] 黄森, 刘新宇, 王鑫华, 魏珂. 增强型GaN基高电子迁移率晶体管及其制备方法. CN: CN105845723B, 2019-03-15.
[34] 刘新宇, 王成森, 黄森, 王鑫华, 康玄武, 魏珂, 黄健. GaN基垂直型功率晶体管器件及其制作方法. CN: CN108807542A, 2018-11-13.
[35] 刘新宇, 黄森, 王鑫华, 康玄武, 魏珂. 一种GaN基增强型功率电子器件及其制作方法. CN: CN108598164A, 2018-09-28.
[36] 王鑫华, 刘新宇, 黄森, 魏珂, 蒋浩杰, 李俊峰, 王文武. 一种匹配(Al,In)GaN材料的超低界面态界面结构及其制备方法. CN: CN108565221A, 2018-09-21.
[37] Huang, Sen, Liu, Xinyu, Wang, Xinhua, Wei, Ke, Bao, Qilong, Wang, Wenwu, Zhao, Chao. GaN-based power electronic device and method for manufacturing the same. US: US10062775(B2), 2018-08-28.
[38] 康玄武, 刘新宇, 黄森, 王鑫华, 魏珂. 一种横向氮化镓功率整流器件及其制作方法. CN: CN108365018A, 2018-08-03.
[39] 康玄武, 刘新宇, 郑英奎, 黄森, 王鑫华, 魏珂. 一种垂直结构的氮化镓功率二极管器件及其制作方法. CN: CN108198758A, 2018-06-22.
[40] 康玄武, 刘新宇, 郑英奎, 黄森, 王鑫华, 魏珂. 一种垂直结构的氮化镓功率二极管器件及其制作方法. CN: CN108198865A, 2018-06-22.
[41] 黄森, 刘新宇, 王鑫华, 康玄武, 魏珂. GaN基单片功率变换器及其制作方法. CN: CN108022925A, 2018-05-11.
[42] 王鑫华, 王泽卫, 黄森, 魏珂, 刘新宇. 基于应变调控的增强型GaN基FinFET结构. CN: CN107919386A, 2018-04-17.
[43] 黄森, 刘新宇, 王鑫华, 康玄武, 魏珂. GaN基单片功率逆变器及其制作方法. CN: CN107887383A, 2018-04-06.
[44] 王鑫华, 黄森, 魏珂, 刘新宇. GaN与Si异质键合结构. CN: CN107768347A, 2018-03-06.
[45] 黄森, 刘新宇, 康玄武, 王鑫华, 魏珂. 增强型GaN基功率晶体管器件及其制作方法. CN: CN106783612A, 2017-05-31.
[46] 黄森, 刘新宇, 王鑫华, 康玄武, 魏珂. 一种GaN基增强型电子器件的材料结构. CN: CN106783945A, 2017-05-31.
[47] 康玄武, 刘新宇, 黄森, 王鑫华, 魏珂. 氮化镓基功率开关器件及其制作方法. CN: CN106601798A, 2017-04-26.
[48] 康玄武, 刘新宇, 黄森, 王鑫华, 魏珂. 氮化镓基功率二极管及其制作方法. CN: CN106601825A, 2017-04-26.
[49] 黄森, 刘新宇, 王鑫华, 康玄武, 魏珂. GaN基HEMT器件栅极结构. CN: CN106549051A, 2017-03-29.
[50] 刘新宇, 康玄武, 王鑫华, 黄森, 魏珂. GaN增强型器件制备方法及形成的GaN增强型器件. CN: CN106206295A, 2016-12-07.
[51] 黄森, 刘新宇, 王鑫华, 魏珂. Semiconductor Device and Method for Manufacturing the Same. US15/333,674, 2016-09-25.
[52] 刘新宇, 康玄武, 王鑫华, 黄森, 魏珂, 王文武, 侯瑞兵. 氮化镓器件介质生长方法及系统. CN: CN105957824A, 2016-09-21.
[53] Liu Xinyu, Huang Sen, Wang Xinhua, Wei Ke, Wang Wenwu, Li Junfeng, Zhao Chao. Low Interface State Device and Method for Manufacturing the Same. CN: US20160268124A1, 2016-09-15.
[54] 黄森, 刘新宇, 王鑫华, 魏珂, 包琦龙, 王文武, 赵超. 一种GaN基功率电子器件及其制备方法. CN: CN105895526A, 2016-08-24.
[55] 刘新宇, 王鑫华, 黄森, 魏珂, 王文武, 侯瑞兵. 面向GaN器件的介质生长系统及其操作方法. CN: CN105470169A, 2016-04-06.
[56] 黄森, 刘新宇, 王鑫华, 魏珂, 包琦龙, 罗军, 赵超. 一种III族氮化物电子器件低温欧姆接触的制作方法. CN: CN105390382A, 2016-03-09.
[57] 刘新宇, 黄森, 王鑫华, 魏珂. III族氮化物低损伤刻蚀方法. CN: CN105355550A, 2016-02-24.
[58] 黄森, 刘新宇, 王鑫华, 魏珂. 一种GaN基增强型功率电子器件及其制备方法. CN: CN105355555A, 2016-02-24.
[59] 王鑫华, 黄森, 魏珂, 刘新宇. GaN基器件中阻止欧姆接触铝元素横向扩散的方法. CN: CN105206524A, 2015-12-30.
[60] 刘新宇, 黄森, 王鑫华, 魏珂, 王文武, 李俊峰, 赵超. 低界面态器件及其制造方法. CN: CN104658894A, 2015-05-27.
[61] , , , . PASSIVATION OF GROUP III-NITRIDE HETEROJUNCTION DEVICES. CN: US20150111371A1, 2015-04-23.
[62] 魏珂, 刘果果, 孔欣, 樊杰, 黄森, 刘新宇. 一种降低背孔工艺中对等离子体刻蚀机腔体污染的方法. CN: CN103730348A, 2014-04-16.
[63] 魏珂, 刘果果, 孔欣, 樊杰, 黄森, 刘新宇. 一种提高背孔工艺中金属Ni掩膜选择比的方法. CN: CN103730340A, 2014-04-16.
[64] 黄森, 刘新宇, 王鑫华, 魏珂, 刘果果, 章晋汉, 郑英奎, 陈向东, 张昊翔, 封飞飞, 万远涛. GaN基高电子迁移率晶体管的低温无金欧姆接触的制作方法. CN: CN103606516A, 2014-02-26.
[65] 王鑫华, 刘新宇, 黄森, 郑英奎, 魏珂, 陈向东, 张昊翔, 封飞飞, 万远涛. 一种通过瞬态电流谱提取缺陷时间常数的方法. CN: CN103593581A, 2014-02-19.

出版信息

   
发表论文
[1] 黄森, 张寒, 郭富强, 王鑫华, 蒋其梦, 魏珂, 刘新宇. 面向下一代GaN功率技术的超薄势垒AlGaN/GaN异质结功率器件. 电子与封装[J]. 2023, 23(1): 010102-1, http://lib.cqvip.com/Qikan/Article/Detail?id=7108775330.
[2] Kexin Deng, Sen Huang, Xinhua Wang, Qimeng Jiang, Haibo Yin, Jie Fan, Guanjun Jing, Ke Wei, Yingkui Zheng, Jingyuan Shi, Xinyu Liu. Insight into the suppression mechanism of bulk traps in Al2O3 gate dielectric and its effect on threshold voltage instability in Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors. APPLIED SURFACE SCIENCE[J]. 2023, 638(4): 158000-, http://dx.doi.org/10.1016/j.apsusc.2023.158000.
[3] Deng, Kexin, Wang, Xinhua, Huang, Sen, Li, Pengfei, Jiang, Qimeng, Yin, Haibo, Fan, Jie, Wei, Ke, Zheng, Yingkui, Shi, Jingyuan, Liu, Xinyu. Effective Suppression of Amorphous Ga2O and Related Deep Levels on the GaN Surface by High-Temperature Remote Plasma Pretreatments in GaN-Based Metal-Insulator-Semiconductor Electronic Devices. ACS APPLIED MATERIALS & INTERFACES[J]. 2023, 15(20): 25058-25065, http://dx.doi.org/10.1021/acsami.3c03094.
[4] Feng, Chao, Jiang, Qimeng, Huang, Sen, Wang, Xinhua, Liu, Xinyu. Gate-Bias-Accelerated V-TH Recovery on Schottky-Type p-GaN Gate AlGaN/GaN HEMTs. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2023, 70(9): 4591-4595, http://dx.doi.org/10.1109/TED.2023.3297568.
[5] 黄怡菲, 蒋其梦, 黄森, 王鑫华, 刘新宇. Characterization of Electrical Switching Safe Operation Area on Schottky-Type P-GaN Gate HEMTs. IEEE Transactions on Power Electronics[J]. 2023, 38(7): 8977-8989, [6] Kexin Deng, Xinhua Wang, Sen Huang, Qimeng Jiang, Haibo Yin, Jie Fan, Guanjun Jing, Yingjie Wang, Tiantian Luan, Ke Wei, Yingkui Zheng, Jingyuan Shi, Xinyu Liu. Effective suppression of deep interface states and dielectric trapping in SiNx/GaN metal-insulator-semiconductor structures by a SiOxNy interfacial layer grown by plasma-enhanced atomic layer deposition. APPLIED SURFACE SCIENCE[J]. 2023, 607: 154937-, http://dx.doi.org/10.1016/j.apsusc.2022.154937.
[7] Luan, Tiantian, Jiang, Qimeng, Huang, Sen, Wang, Xinhua, Jin, Hao, Guo, Fuqiang, Yao, Yixu, Fan, Jie, Yin, Haibo, Wei, Ke, Li, Yankui, Jiang, Haojie, Li, Junfeng, Liu, Xinyu. Investigation of trapping/de-trapping dynamics of surface states in AlGaN/GaN high-electron mobility transistors based on dual-gate structures. MICROELECTRONIC ENGINEERING[J]. 2023, 269: 111916-, http://dx.doi.org/10.1016/j.mee.2022.111916.
[8] Li, Yuchen, Huang, Sen, Wang, Xinhua, Jiang, Qimeng, Liu, Xinyu. Investigation of ON-State Breakdown Mechanism in AlGaN/GaN HEMTs with AlGaN Back Barrier. ELECTRONICS[J]. 2022, 11(9): 1331-, http://dx.doi.org/10.3390/electronics11091331.
[9] Jin, Hao, Jiang, Qimeng, Huang, Sen, Wang, Xinhua, Wang, Yingjie, Ji, Zhongchen, Dai, Xinyue, Feng, Chao, Fan, Jie, Wei, Ke, Liu, Jianxun, Zhong, Yaozong, Sun, Qian, Liu, Xinyu. An Enhancement-Mode GaN p-FET With Improved Breakdown Voltage. IEEE ELECTRON DEVICE LETTERS[J]. 2022, 43(8): 1191-1194, [10] Jing, Guanjun, Wang, Xinhua, Huang, Sen, Jiang, Qimeng, Deng, Kexin, Wang, Yuhao, Li, Yankui, Fan, Jie, Wei, Ke, Liu, Xinyu. Mechanism of Linearity Improvement in GaN HEMTs by Low Pressure Chemical Vapor Deposition-SiNx Passivation. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2022, 69(12): 6610-6615, [11] Mu, Fengwen, Xu, Bin, Wang, Xinhua, Gao, Runhua, Huang, Sen, Wei, Ke, Takeuchi, Kai, Chen, Xiaojuan, Yin, Haibo, Wang, Dahai, Yu, Jiahan, Suga, Tadatomo, Shiomi, Junichiro, Liu, Xinyu. A novel strategy for GaN-on-diamond device with a high thermal boundary conductance. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2022, 905: http://dx.doi.org/10.1016/j.jallcom.2022.164076.
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科研活动

   
科研项目
( 1 ) 基于极化电荷补偿界面态钝化理论的GaN基功率开关可靠性及增强技术研究, 主持, 国家级, 2015-01--2018-12
( 2 ) Si基GaN增强型电力电子器件研究, 参与, 国家级, 2016-01--2020-12
( 3 ) GaN基功率器件与界面态物理, 主持, 部委级, 2016-08--2021-07
( 4 ) Si衬底上氮化物半导体异质结构材料和功率电子器件相关物理问题研究, 主持, 国家级, 2017-01--2021-12
( 5 ) 中国科学院青年创新促进会人才项目, 主持, 部委级, 2016-01--2019-12
( 6 ) 智能功率器件与系统, 主持, 市地级, 2018-01--2020-12
( 7 ) GaN基功率电子器件, 主持, 国家级, 2019-01--2021-12
( 8 ) 新型氮化镓电力电子元件技术开发, 主持, 院级, 2016-01--2020-12
( 9 ) Si基GaN功率芯片与CMOS工艺电路融合技术, 主持, 国家级, 2019-12--2024-12

指导学生

已指导学生

王元琨  硕士研究生  085209-集成电路工程  

现指导学生

向兰兰  硕士研究生  085208-电子与通信工程  

李敏  硕士研究生  085208-电子与通信工程  

赵瑞  硕士研究生  085208-电子与通信工程  

邓可心  硕士研究生  080903-微电子学与固体电子学  

施雯  硕士研究生  080903-微电子学与固体电子学  

刘洋  硕士研究生  085209-集成电路工程  

田野  硕士研究生  085209-集成电路工程  

郭富强  硕士研究生  085209-集成电路工程