基本信息
赵梅  女  硕导  中国科学院高能物理研究所
电子邮件: zhaomei@ihep.ac.cn
通信地址: 北京市石景山区玉泉路19号乙中科院高能所
邮政编码:

研究领域

APD探测器,硅像素探测器,以及高压CMOS探测器,碳化硅探测器

招生信息

   
招生专业
082703-核技术及应用
招生方向
APD/SiPM探测器设计
硅像素探测器
SiC探测器设计

教育背景

2008-08--2014-01   清华大学   博士
2004-08--2008-07   清华大学   本科/学士

工作经历

工作简历
2018-12~2019-12,法国马赛粒子物理研究中心, 访问学者
2016-12~现在, 中国科学院高能物理研究所, 副研究员
2014-04~2016-12,中国科学院高能物理研究所, 助理研究员

专利与奖励

奖励信息
(1) 清华大学光华二等奖学金, 二等奖, 研究所(学校), 2011
(2) 微电子所Cadence奖学金, 三等奖, 研究所(学校), 2010
(3) 研究生社会工作三等奖学金, 三等奖, 研究所(学校), 2009
(4) 清华大学综合优秀三等奖, 三等奖, 研究所(学校), 2009
(5) 清华大学学业优秀奖学金, 三等奖, 研究所(学校), 2008
(6) 清华大学学业优秀二等奖, 二等奖, 研究所(学校), 2007
(7) 清华大学学业优秀三等奖, 三等奖, 研究所(学校), 2005
专利成果
( 1 ) 一种具有应变沟道的CMOS器件结构及其形成方法, 发明, 2012, 第 1 作者, 专利号: CN101859771B
( 2 ) 一种半导体栅结构及其形成方法, 发明, 2015, 第 1 作者, 专利号: CN103165433B
( 3 ) 半导体结构及其制造方法, 发明, 2016, 第 1 作者, 专利号: CN102201435B
( 4 ) 金属源漏结构及其形成方法, 发明, 2016, 第 1 作者, 专利号: CN103594518B
( 5 ) 一种半导体栅结构及其形成方法, 发明, 2016, 第 1 作者, 专利号: CN103151255B
( 6 ) 半导体结构及其制造方法, 发明, 2014, 第 1 作者, 专利号: US8860143B2
( 7 ) 具有含碳绝缘层的肖特基势垒晶体管及其制备方法, 发明, 2014, 第 3 作者, 专利号: CN102569418B
( 8 ) 具有SiGeSn源漏的MOSFET及其形成方法, 发明, 2017, 第 3 作者, 专利号: CN103839980B
( 9 ) 具有隧穿介质层的栅控肖特基结场效应晶体管及形成方法, 发明, 2013, 第 3 作者, 专利号: CN102148255B
( 10 ) 具有隧穿介质层的栅控肖特基结场效应晶体管及形成方法, 发明, 2015, 第 3 作者, 专利号: US9006088B2
( 11 ) 多晶薄膜制备方法、多晶薄膜及由其制备的薄膜晶体管, 发明, 2016, 第 3 作者, 专利号: CN102646602B
( 12 ) GeSn层及其形成方法, 发明, 2016, 第 3 作者, 专利号: US9299566B2
( 13 ) 多晶薄膜制备方法、多晶薄膜及由其制备的薄膜晶体管, 发明, 2014, 第 3 作者, 专利号: US8785938B2

出版信息

   
发表论文
[1] Kewei Wu, Xuewei Jia, Tao Yang, Mengzhao Li, Wei Wang, Mei Zhao, Zhijun Liang, Joo Guimaraes da Costa, Yunyun Fan, Han Cui, Alissa Howard, Gregor Kramberger, Xin Shi, Yuekun Heng, Yuhang Tan, Bo Liu, Yuan Feng, Shuqi Li, Mengran Li, Chengjun Yu, Xuan Yang, Mingjie Zhai, Gaobo Xu, Gangping Yan, Qionghua Zhai, Mingzheng Ding, Jun Luo, Huaxiang Yin, Junfeng Li. Design and testing of LGAD sensor with shallow carbon implantation. NUCLEAR INST. AND METHODS IN PHYSICS RESEARCH, A. 2023, 1046: http://dx.doi.org/10.1016/j.nima.2022.167697.
[2] Tao Yang, Kewei Wu, Mei Zhao, Xuewei Jia, Yuhang Tan, Suyu Xiao, Kai Liu, Xiyuan Zhang, Congcong Wang, Mengzhao Li, Yunyun Fan, Shuqi Li, Chengjun Yu, Han Cui, Hao Zeng, Mingjie Zhai, Shuiting Xin, Maoqiang Jing, Gangping Yan, Qionghua Zhai, Mingzheng Ding, Gaobo Xu, Huaxiang Yin, Gregor Kramberger, Zhijun Liang, Joo Guimares da Costa, Xin Shi. Leakage current simulations of Low Gain Avalanche Diode with improved Radiation Damage Modeling. NUCLEAR INST. AND METHODS IN PHYSICS RESEARCH, A. 2022, 1040: http://dx.doi.org/10.1016/j.nima.2022.167111.
[3] Feng, Yuan, Huang, Xinhui, Yu, Chengjun, Jia, Xuewei, Li, Shuqi, Li, Mengzhao, Fan, Yunyun, Liang, Zhijun, Sun, Weiyi, Wu, Kewei, Zhao, Mei, da Costa, Joao Guimaraes, Xu, Gaobo. Study of the Acceptor Removal Effect of LGAD. IEEE TRANSACTIONS ON NUCLEAR SCIENCE[J]. 2022, 69(12): 2324-2329, http://dx.doi.org/10.1109/TNS.2022.3221482.
[4] Zhang, X, Zhao, Mei, Zhang, L, Yang, T, da Costa, J Guimara, Liang, Z, Shi, X, Jia, X. Design of AC-coupled low gain avalanche diodes (AC-LGADs): a 2D TCAD simulation study. JOURNAL OF INSTRUMENTATION[J]. 2022, 17(9): [5] Li, Mengzhao, Fan, Yunyun, Jia, Xuewei, Cui, Han, Liang, Zhijun, Zhao, Mei, Yang, Tao, Wu, Kewei, Li, Shuqi, Yu, Chengjun, Liu, Bo, Wang, Wei, Yang, Xuan, Tan, Yuhang, Shi, Xin, da Costa, J G, Heng, Yuekun, Xu, Gaobo, Zhai, Qionghua, Yan, Gangping, Ding, Mingzheng, Luo, Jun, Yin, Huaxiang, Li, Junfeng, Howard, Alissa, Kramberger, Gregor. Effects of shallow carbon and deep N++ layer on the radiation hardness of IHEP-IME LGAD sensors. IEEE TRANS. ON NUCLEAR SCIENCE[J]. 2022, 69: 1098-, [6] Zhao, Mei, Jia, Xuewei, Wu, Kewei, Yang, Tao, Li, Mengzhao, Fan, Yunyun, Yan, Gangping, Wang, Wei, Li, Mengran, Xu, Gaobo, Ding, Mingzheng, Yin, Huaxiang, Luo, Jun, Li, Junfeng, Shi, Xin, Liang, Zhijun, da Costa, Joao Guimaraes. Low Gain Avalanche Detectors with good time resolution developed by IHEP and IME for ATLAS HGTD project. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT[J]. 2022, 1033: http://dx.doi.org/10.1016/j.nima.2022.166604.
[7] Yuhang Tan, Tao Yang, Kai Liu, Congcong Wang, Xiyuan Zhang, Mei Zhao, Xiaochuan Xia, Hongwei Liang, Ruiliang Xu, Yu Zhao, Xiaoshen Kang, Chenxi Fu, Weimin Song, Zhenzhong Zhang, Ruirui Fan, Xinbo Zou, Xin Shi. Timing Performance Simulation for 3D 4H-SiC Detector. MICROMACHINES[J]. 2021, 13(46): https://doaj.org/article/3924f7c8a63048779f0ca48eb4484f29.
[8] Li, M, Fan, Y, Liu, B, Cui, H, Jia, X, Li, S, Yu, C, Yang, X, Wang, W, Zhai, M, Yang, T, Wu, K, Tan, Y, Xiao, S, Zhao, M, Shi, X, Liang, Z, Heng, Y, da Costa, J Guimaraes, Zhang, X, Han, D, Howard, A, Kramberger, G. The performance of IHEP-NDL LGAD sensors after neutron irradiation. JOURNAL OF INSTRUMENTATION[J]. 2021, 16(8): http://dx.doi.org/10.1088/1748-0221/16/08/P08053.
[9] Shi X, Ayoub M K, da Costa J Barreiro Guimares, Cui H, Kiuchi R, Fan Y, Han S, Huang Y, Jing M, Liang Z, Liu B, Liu J, Lyu F, Qi B, Ran K, Shan L, Shi L, Tan Y, Wu K, Xiao S, Yang T, Yang Y, Yu C, Zhao M, Zhuang X, Garca L Castillo, Gkougkousis E L, Grieco C, Grinstein S, Leite M, Saito G T, Howard A, Cindro V, Kramberger G, Mandi I, Miku M, dAmen G, Giacomini G, Rossi E, Tricoli A, Chen H, Ge J, Li C, Liang H, Yang X, Zhao L, Zhao Z, Zheng X, Atanov N, Davydov Y, GrosseKnetter J, Lange J, Quadt A, Schwickardi M, Alderweireldt S, Ferreira A S C, Guindon S, Kuwertz E, Rizzi C, Christie S, Galloway Z, Gee C, Jin Y, Labitan C, Lockerby M, Mazza S M, MartinezMckinney F, Padilla R, Ren H, Sadrozinski H F W, Schumm B, Seiden A, Wilder M, Wyatt W, Zhao Y, Han D, Zhang X. Radiation Campaign of HPK Prototype LGAD sensors for the High-Granularity Timing Detector (HGTD). 2020, http://arxiv.org/abs/2004.13895.
[10] 田飞飞, 刘浩, 赵梅. 关于未引入新技术内容的补附图重新确定申请日的思考. 中国科技信息[J]. 2020, 27-29, http://lib.cqvip.com/Qikan/Article/Detail?id=7103239544.
[11] Wu, K, Zhao, M, Yang, T, da Costa, Joao Guimaraes, Liang, Z, Shi, X, IHEP HGTD Collaboration. Design and fabrication of Low Gain Avalanche Detectors (LGAD): a TCAD simulation study. JOURNAL OF INSTRUMENTATION[J]. 2020, 15(3): https://www.webofscience.com/wos/woscc/full-record/WOS:000528039600008.
[12] Fan, Y Y, Alderweireldt, S, Agapopoulou, C, Atanov, N, Ayoub, M Kassem, Caforio, D, Chen, H, Christie, S, da Costa, J G, Cui, H, dAmen, G, Davydov, Y, Kiuchi, R, Ferreira, A S C, Galloway, Z, Garau, M, Garcia, L C, Ge, J, Gee, C, Giacomini, G, Gkoukousis, V, Grieco, C, Guindon, S, Han, D, Han, S, Huang, Y, Jin, Y, Jing, M, Kuwertz, E, Labitan, C, Leite, M, Li, B, Liang, H, Liang, Z, Liu, B, Liu, J, Lockerby, M, Lyu, F, Makovec, N, Mazza, S M, MartinezMckinney, F, Nikolic, I, Padilla, R, Qi, B, Ran, K, Ren, H, Rizzi, C, Rossi, E, Sacerdoti, S, Sadrozinski, H F W, Saito, G T, Schumm, B, Seiden, A, Shan, L, Shi, L, Tan, Y, Tricoli, A, TrincazDuvoid, S, Wilder, M, Wu, K, Wyatt, W, Shi, X, Yang, T, Yang, Y, Yu, C, Zhang, X, Zhao, L, Zhao, M, Zhao, Y, Zhao, Z, Zheng, X, Zhuang, X. Radiation hardness of the low gain avalanche diodes developed by NDL and IHEP in China. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT[J]. 2020, 984: http://dx.doi.org/10.1016/j.nima.2020.164608.
[13] Wu, K, Zhao, M, Yang, T, da Costa, Joao Guimaraes, Liang, Z, Shi, X. Design of Low Gain Avalanche Detectors (LGAD) with 400 keV ion implantation energy for multiplication layer fabrication. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT[J]. 2020, 984: http://dx.doi.org/10.1016/j.nima.2020.164558.
[14] Zhao, Mei, Liu, Lei, Liang, Renrong, Wang, Jing, Xu, Jun. Novel Sn-assisted nitridation of Ge/HfO2 interface and improved electrical properties of the MOS capacitor. JAPANESE JOURNAL OF APPLIED PHYSICS[J]. 2014, 53(4): http://ir.ihep.ac.cn/handle/311005/225049.
[15] Zhao Mei, Liang Renrong, Wang Jing, Xu Jun. Effective interface passivation of a Ge/HfO2 gate stack using ozone pre-gate treatment and ozone ambient annealing. JOURNAL OF SEMICONDUCTORS[J]. 2013, 34(6): 066005-1, [16] Zhao Mei, Liang RenRong, Wang Jing, Xu Jun. Effect of Er ion implantation on the physical and electrical properties of TiN/HfO2 gate stacks on Si substrate. SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY[J]. 2013, 56(7): 1384-1388, https://www.webofscience.com/wos/woscc/full-record/WOS:000320502800021.
[17] Zhao, Mei, Liang, Renrong, Wang, Jing, Xu, Jun. Improved electrical properties of Ge metal-oxide-semiconductor devices with HfO2 gate dielectrics using an ultrathin GeSnOx film as the surface passivation layer. APPLIED PHYSICS LETTERS[J]. 2013, 102(14): https://www.webofscience.com/wos/woscc/full-record/WOS:000318268800065.

科研活动

   
科研项目
( 1 ) 基于高压CMOS工艺的像素探测器关键技术研究, 主持, 国家级, 2016-01--2018-12
( 2 ) 基于CMOS工艺的SiPM /APD阵列探测器件研制, 主持, 市地级, 2017-01--2017-12
( 3 ) CEPC 物理研究和探测器关键技术预研, 参与, 市地级, 2016-01--2018-12
( 4 ) 用于顶点探测器的高分辨低功耗SOI像素芯片的若干关键问题的研究, 参与, 国家级, 2016-01--2018-12
( 5 ) 低温极低噪声读出芯片及相关技术, 参与, 国家级, 2017-01--2019-12
( 6 ) 探测器关键技术预研, 参与, 国家级, 2016-06--2020-12
( 7 ) 高时间分辨率的低增益雪崩二极管研制, 主持, 市地级, 2019-01--2020-12
( 8 ) ATLAS实验探测器Phase 2升级, 参与, 国家级, 2020-01--2024-12
( 9 ) 高能环形正负电子对撞机关键技术研发与验证, 参与, 国家级, 2018-07--2023-06
( 10 ) 用于粒子探测的高时空分辨率硅雪崩探测器关键技术研究, 主持, 国家级, 2022-01--2025-12
参与会议
(1)Carbon doped low gain avalanche devices with improved radiation hardness for ATLAS HGTD project   2021年全国辐射探测微电子学术交流会(NME’2021)   2021-11-26
(2)Radiation hard ultra-fast LGAD sensor R & D   2021-11-25
(3)Ongoing development on LGAD    2021-11-08
(4)Timing and spatial performance of IHEP AC-LGADs   2021-09-12
(5)Development of IHEP low gain avalanche devices for ATLAS HGTD project   中国物理学会高能物理分会第十三届全国粒子物理学术会议(2021)   2021-08-16
(6)Measurement results of IHEP-IMEv1 low gain avalanche devices and IHEP-IMEv2 sensor design for ATLAS HGTD   2021-05-24
(7)Simulation and testing results of the low gain avalanche diodes developed by IHEP and IME in China   2020-11-18
(8)IHEP LGAD Sensor Design for ATLAS HGTD   2019-12-14
(9)MCP-PMT BASE电路初步研究结果   光电倍增管研制第十四次合作组会   2014-09-25
(10)Enhanced Hole Mobility of Ge/GeSn pMOSFETs with a GeSnO Interface Layer and a NiGe Schottky Source/Drain   2014-09-22
(11)Researches on underwater changeable scheme for Electronics part    JUNO合作组会   2014-07-29
(12)Effects of Sulfur Passivation on Ge/GeSn MOS Capacitors with HfO2 Gate Dielectric   2013-10-27
(13)Improved electrical properties of Ge metal-oxide-semiconductor devices with HfO2 gate dielectrics using an ultrathin GeSnO x film as the surface passivation layer    2013-09-24