基本信息
黎大兵 男 博导 长春光学精密机械与物理研究所
电子邮件:lidb@ciomp.ac.cn
通信地址:长春市东南湖大路3888号
邮政编码:130033

研究领域

GaN基光电子材料与器件

招生信息

招收有志于从事GaN研究,具有物理,材料,和电子背景的学生。
招生专业
070205-凝聚态物理
招生方向
GaN基半导体材料MOCVD生长,GaN基紫外光电子器件

教育背景

2001-09--2004-07 中国科学院研究生院(中科院半导体所) 博士
1998-08--2001-03 吉林大学 硕士
1994-08--1998-07 吉林大学 学士
出国学习工作
2004年~2008年 日本三重大学 博士后、JSPS外国人特别研究员

工作经历

2007年至今 中国科学院长春光学精密机械与物理研究所

教授课程

半导体材料与光电子学

专利与奖励

   
奖励信息
(1) 吉林省自然科学学术成果奖,一等奖,省级,2013
(2) 中国科学院青年促进会会员,院级级,2011
(3) 卢嘉锡青年人才奖,院级级,2009
(4) Young Scientist Award,其他级,2006

出版信息

   
发表论文
[1] Yuxuan Chen, Ke Jiang, Xiaojuan Sun, Zi-Hui Zhang, Shanli Zhang, Jianwei Ben, Bingxiang Wang, Long Guo, Dabing Li. Optimizing metal/n-AlGaN contact by recessed AlGaN heterostructure with polarization effect. Nanoscale Advances[J]. 2023, [2] Jiang, Nianlei, Chen, Yang, Lv, Bingchen, Jiang, Ke, Zhang, Shanli, Lu, Shunpeng, Li, Shaojuan, Tao, Tao, Sun, Xiaojuan, Li, Dabing. Plasmonic-enhanced efficiency of AlGaN-based deep ultraviolet LED by graphene/Al nanoparticles/graphene hybrid structure. Optics Letters[J]. 2023, 48(12): 3175-3178, https://opg.optica.org/ol/fulltext.cfm?uri=ol-48-12-3175&id=531326.
[3] Zang, Hang, Liu, Mingrui, Jia, Yuping, Jiang, Ke, Ben, Jianwei, Chen, Yang, Lv, Shunpeng, Sun, Xioajuan, Li, Dabing. Tunable piezoelectric and ferroelectric responses of Al1-xScxN: The role of atomic arrangement. 中国科学 物理学 力学 天文学[J]. 2023, 66(7): 277711-, [4] Hang Zang, Zhiming Shi, JianWei Ben, Ke Jiang, Shanli Zhang, Liu, Mingrui, Tong Wu, Yuping Jia, Xiaojuan Sun, Dabing Li. Growth Mechanism and Electronic Property of Stacking Mismatch Boundaries in Wurtzite III-Nitride Materials. Physical Review B[J]. 2023, 107: 165308-, [5] Yang, Changjin, Liang, Lei, Qin, Li, Tang, Hui, Lei, Yuxin, Jia, Peng, Chen, Yongyi, Wang, Yubing, Song, Yu, Qiu, Cheng, Zheng, Chuantao, Zhao, Huan, Li, Xin, Li, Dabing, Wang, Lijun. Advances in silicon-based, integrated tunable semiconductor lasers. NANOPHOTONICS[J]. 2023, 12(2): [6] Zang, Hang, Ben, Jianwei, Jiang, Ke, Chen, Yang, Zhang, Shanli, Liu, Mingrui, Wu, Tong, Jia, Yuping, Sun, Xiaojuan, Li, Dabing. Growth mechanism and electronic properties of stacking mismatch boundaries in wurtzite III-nitride material. Physical Review B[J]. 2023, 107(16): 165308-, [7] Xianjun Wang, Ke Jiang, Xiaojuan Sun, Zi-Hui Zhang, Yuxuan Chen, Bingxiang Wang, Dabing Li. Valence subbands profile regulation in AlGaN quantum well based on k∙p theory. Physica Scripta[J]. 2023, [8] Chunyue Zhang, Ke Jiang, Xiaojuan Sun, Dabing Li. Recent progress on AlGaN based deep ultraviolet light-emit- 2ting diodes below 250 nm. Crystals[J]. 2022, [9] Liu, Mingrui, Yue, Jianing, Meng, Jianchao, Shao, Tingna, Yao, Chunli, Sun, Xiaojuan, Nie, Jiacai, Li, Dabing. Sign reversal of planar Hall effect with temperature in La-doped Sr2IrO4 films. APPLIED PHYSICS LETTERS[J]. 2022, 122(2): http://dx.doi.org/10.1063/5.0134002.
[10] Fu, Danyang, Lei, Dan, Li, Zhe, Zhang, Gang, Huang, Jiali, Sun, Xiaojuan, Wang, Qikun, Li, Dabing, Wang, Jiang, Wu, Liang. Toward Phi 56 mm Al-Polar AlN Single Crystals Grown by the Homoepitaxial PVT Method. CRYSTAL GROWTH & DESIGN[J]. 2022, 22(5): 3462-3470, http://dx.doi.org/10.1021/acs.cgd.2c00240.
[11] Chen, Yang, Zang, Hang, Ben, Jianwei, Zhang, Shanli, Jiang, Ke, Shi, Zhiming, Jia, Yuping, Liu, Mingrui, Sun, Xiaojuan, Li, Dabing. AlGaN UV Detector with Largely Enhanced Heat Dissipation on Mo Substrate Enabled by van der Waals Epitaxy. CRYSTAL GROWTH & DESIGN[J]. 2022, 23: 1162-1171, [12] Shi, Zhiming, Zang, Hang, Ma, Xiaobao, Yang, Yuxin, Jiang, Ke, Chen, Yang, Jia, Yuping, Sun, Xiaojuan, Li, Dabing. Grain boundary-driven magnetism in aluminum nitride. APPLIED PHYSICS LETTERS[J]. 2022, 121(24): [13] Chen, Yang, Zang, Hang, Zhang, Shanli, Shi, Zhiming, Ben, Jianwei, Jiang, Ke, Jia, Yuping, Liu, Mingrui, Li, Dabing, Sun, Xiaojuan. Van der Waals Epitaxy of c-Oriented Wurtzite AlGaN on Polycrystalline Mo Substrates for Enhanced Heat Dissipation. ACS APPLIED MATERIALS & INTERFACES[J]. 2022, 14(33): 37947-37957, http://dx.doi.org/10.1021/acsami.2c10039.
[14] Qi, Zhanbin, Shi, Zhiming, Zang, Hang, Ma, Xiaobao, Yang, Yuxin, Jia, Yuping, Jiang, Ke, Sun, Xiaojuan, Li, Dabing. Morphology and carrier mobility of high-B-content BxAl1-xN ternary alloys from an ab initio global search. NANOSCALE[J]. 2022, 14(31): 11335-11342, [15] An, Junru, Zhao, Xingyu, Zhang, Yanan, Liu, Mingxiu, Yuan, Jian, Sun, Xiaojuan, Zhang, Zhiyu, Wang, Bin, Li, Shaojuan, Li, Dabing. Perspectives of 2D Materials for Optoelectronic Integration. ADVANCED FUNCTIONAL MATERIALS[J]. 2022, 32(14): http://dx.doi.org/10.1002/adfm.202110119.
[16] Zou, Yuting, Shi, Yaru, Wang, Bin, Liu, Mingxiu, An, Junru, Zhang, Nan, Qi, Liujian, Yu, Weili, Li, Dabing, Li, Shaojuan. Electrical and Optoelectrical Dual-Modulation in Perovskite-Based Vertical Field-Effect Transistors. ACS PHOTONICS. 2022, [17] Tao Huang, Zhicheng Zhu, Chen Zhao, Wenchi Kong, Xuhang Chen, Ruiyan Li, Zhi Yu, Zhiming Shi, Dabing Li, Bai Yang, Weili Yu. Enhancing two-dimensional perovskite photodetector performance through balancing carrier density and directional transport. Journal of Materials Chemistry A[J]. 2022, 10: 21044-21052, [18] Chen, Yang, Shi, Zhiming, Zhang, Shanli, Ben, Jianwei, Jiang, Ke, Zang, Hang, Jia, Yuping, Lu, Wei, Li, Dabing, Sun, Xiaojuan. The van der Waals Epitaxy of High-Quality N-Polar Gallium Nitride for High-Response Ultraviolet Photodetectors with Polarization Electric Field Modulation. ADVANCED ELECTRONIC MATERIALS. 2021, [19] 隋佳恩, 贲建伟, 臧行, 蒋科, 张山丽, 郭冰亮, 陈洋, 石芝铭, 贾玉萍, 黎大兵, 孙晓娟. 高温热处理a面AlN表面形貌演变机理. 发光学报[J]. 2021, 42(6): 810-817, http://lib.cqvip.com/Qikan/Article/Detail?id=7104814014.
[20] Ke Jiang, Xiaojuan Sun, Zhiming Shi, Hang Zang, Jianwei Ben, HuiXiong Deng, Dabing Li. Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides. LIGHT-SCIENCE & APPLICATIONS[J]. 2021, 10(1): 671-680, https://doaj.org/article/140e562a6c814998ba3234b10cd8dd3d.
[21] Kai, Cuihong, Zang, Hang, Ben, Jianwei, Jiang, Ke, Shi, Zhiming, Jia, Yuping, Cao, Xingzhong, Lu, Wei, Sun, Xiaojuan, Li, Dabing. Origination and evolution of point defects in AlN film annealed at high temperature. JOURNAL OF LUMINESCENCE[J]. 2021, 235: http://dx.doi.org/10.1016/j.jlumin.2021.118032.
[22] Zang, Hang, Sun, Xiaojuan, Jiang, Ke, Chen, Yang, Zhang, Shanli, Ben, Jianwei, Jia, Yuping, Wu, Tong, Shi, Zhiming, Li, Dabing. Cation Vacancy in Wide Bandgap III-Nitrides as Single-Photon Emitter: A First-Principles Investigation. ADVANCED SCIENCE[J]. 2021, 8(18): http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000678874400001.
[23] Xin Li, Shuyu Ni, Yan Jiang, Jie Li, Wei Wang, Jialei Yuan, Dabing Li, Xiaojuan Sun, Yongjin Wang. AlInGaAs Multiple Quantum Well-Integrated Device with Multifunction Light Emission/Detection and Electro-Optic Modulation in the Near-Infrared Range. ACS OMEGA[J]. 2021, 6(12): 8687-8692, https://doaj.org/article/ee21f5736f3342c081920a8bf5f2cc4e.
[24] Jia, Yuping, Shen, Yutong, Sun, Xiaojuan, Shi, Zhiming, Jiang, Ke, Wu, Tong, Liang, Hongwei, Cui, Xingzhu, Lu, Wei, Li, Dabing. Improved performance of SiC radiation detector based on metal-insulator-semiconductor structures. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT[J]. 2021, 997: http://dx.doi.org/10.1016/j.nima.2021.165166.
[25] Wang, Jiaxing, Chu, Chunshuang, Tian, Kangkai, Che, Jiamang, Shao, Hua, Zhang, Yonghui, Jiang, Ke, Zhang, ZiHui, Sun, Xiaojuan, Li, Dabing. Polarization assisted self-powered GaN-based UV photodetector with high responsivity. PHOTONICS RESEARCH[J]. 2021, 9(5): 734-740, http://dx.doi.org/10.1364/PRJ.418813.
[26] Ben, Jianwei, Liu, Xinke, Wang, Cong, Zhang, Yupeng, Shi, Zhiming, Jia, Yuping, Zhang, Shanli, Zhang, Han, Yu, Wenjie, Li, Dabing, Sun, Xiaojuan. 2D III-Nitride Materials: Properties, Growth, and Applications. ADVANCED MATERIALSnull. 2021, 33(27): http://dx.doi.org/10.1002/adma.202006761.
[27] Shi, Zhiming, Qi, Zhanbin, Zang, Hang, Jiang, Ke, Chen, Yang, Jia, Yuping, Wu, Tong, Zhang, Shanli, Sun, Xiaojuan, Li, Dabing. Point Defects in Monolayer h-AlN as Candidates for Single-Photon Emission. ACS APPLIED MATERIALS AND INTERFACES[J]. 2021, 13(31): 37380-37387, [28] Jia, Yuping, Sun, Xiaojuan, Shi, Zhiming, Jiang, Ke, Wu, Tong, Liang, Hongwei, Cui, Xingzhu, Lu, Wei, Li, Dabing. Improved performance of SiC radiation detectors due to optimized ohmic contact electrode by graphene insertion. DIAMOND AND RELATED MATERIALS[J]. 2021, 115: http://dx.doi.org/10.1016/j.diamond.2021.108355.
[29] Zhu, Shijie, Qiu, Pengjiang, Qian, Zeyuan, Shan, Xinyi, Wang, Zhou, Jiang, Ke, Sun, Xiaojuan, Cui, Xugao, Zhang, Guoqi, Li, Dabing, Tian, Pengfei. 2 Gbps free-space ultraviolet-C communication based on a high-bandwidth micro-LED achieved with pre-equalization. OPTICS LETTERS[J]. 2021, 46(9): 2147-2150, http://dx.doi.org/10.1364/OL.423311.
[30] Chen, Yang, Jiang, Ke, Zang, Hang, Ben, Jianwei, Zhang, Shanli, Shi, Zhiming, Jia, Yuping, Lu, Wei, Li, Dabing, Sun, Xiaojuan. Growth of high-quality wafer-scale graphene on dielectric substrate for high-response ultraviolet photodetector. CARBON[J]. 2021, 175: 155-163, http://dx.doi.org/10.1016/j.carbon.2020.12.055.
[31] Guo, Long, Jiang, Ke, Sun, Xiaojuan, Zhang, Zihui, Ben, Jianwei, Jia, Yuping, Wang, Yong, Li, Dabing. Multiple-quantum-well-induced unipolar carrier transport multiplication in AlGaN solar-blind ultraviolet photodiode. PHOTONICS RESEARCH[J]. 2021, 9(10): 1907-1915, http://dx.doi.org/10.1364/PRJ.435937.
[32] Shi, Zhiming, Qi, Zhanbin, Zang, Hang, Jiang, Ke, Chen, Yang, Jia, Yuping, Wu, Tong, Zhang, Shanli, Sun, Xiaojuan, Li, Dabing. Point Defects in Monolayer h-AlN as Candidates for Single-Photon Emission. ACS APPLIED MATERIALS & INTERFACES[J]. 2021, 13(31): 37370-37377, http://dx.doi.org/10.1021/acsami.1c09175.
[33] Jiang, Ke, Sun, Xiaojuan, Chen, Yuxuan, Zhang, Shanli, Ben, Jianwei, Chen, Yang, Zhang, ZiHui, Jia, Yuping, Shi, Zhiming, Li, Dabing. Three-dimensional metal semiconductor meta bipolar ultraviolet phototransistor based on GaN p-i-n epilayer. APPLIED PHYSICS LETTERS[J]. 2021, 119(16): [34] Chen, Yang, Wu, You, Ben, Jianwei, Jiang, Ke, Jia, Yuping, Zhang, Shanli, Zang, Hang, Shi, Zhiming, Duan, Bin, Sun, Xiaojuan, Li, Dabing. A high-response ultraviolet photodetector by integrating GaN nanoparticles with graphene. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2021, 868: 159281-, http://dx.doi.org/10.1016/j.jallcom.2021.159281.
[35] Kai, Cuihong, Sun, Xiaojuan, Jia, Yuping, Jiang, Ke, Shi, Zhiming, Ben, Jianwei, Wu, You, Wang, Yong, Li, Dabing. Characterization of carrier transport behavior of specific type dislocations in GaN by light assisted KPFM. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2020, 53(23): [36] Zhou, Xingwei, Liu, Xin, Zhang, Jiahao, Zhang, Cai, Yoo, Seung Jo, Kim, JinGyu, Chu, Xianyu, Song, Chao, Wang, Peng, Zhao, Zhenzhen, Li, Dabing, Zhang, Wei, Zheng, Weitao. Highly -dispersed cobalt clusters decorated onto nitrogen -doped carbon nanotubes as multifunctional electrocatalysts for OER, HER and ORR. CARBON[J]. 2020, 166: 284-290, http://dx.doi.org/10.1016/j.carbon.2020.05.037.
[37] Chen, Yang, Jia, YuPing, Shi, ZhiMing, Sun, XiaoJuan, Li, DaBing. Van der Waals Epitaxy: A new way for growth of III-nitrides. SCIENCE CHINA-TECHNOLOGICAL SCIENCES[J]. 2020, 63(3): 528-530, https://www.webofscience.com/wos/woscc/full-record/WOS:000499958400001.
[38] Jia, Yuping, Shi, Zhiming, Hou, Wantong, Zang, Hang, Jiang, Ke, Chen, Yang, Zhang, Shanli, Qi, Zhanbin, Wu, Tong, Sun, Xiaojuan, Li, Dabing. Elimination of the internal electrostatic field in two-dimensional GaN-based semiconductors. NPJ 2D MATERIALS AND APPLICATIONS[J]. 2020, 4(1): https://doaj.org/article/ef6627badb1d40bf9af2c56ce4c8aaaa.
[39] Jiang, Ke, Sun, Xiaojuan, Ben, Jianwei, Shi, Zhiming, Jia, Yuping, Chen, Yang, Zhang, Shanli, Wu, Tong, Lu, Wei, Li, Dabing. Suppressing the luminescence of V cation -related point -defect in AlGaN grown by MOCVD on HVPE-AlN. APPLIED SURFACE SCIENCE[J]. 2020, 520: 146369-, http://dx.doi.org/10.1016/j.apsusc.2020.146369.
[40] 刘博阳, 宋文涛, 刘争晖, 孙晓娟, 王开明, 王亚坤, 张春玉, 陈科蓓, 徐耿钊, 徐科, 黎大兵. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征. 物理学报[J]. 2020, 69(12): 319-327, http://lib.cqvip.com/Qikan/Article/Detail?id=7102009812.
[41] 贲建伟, 孙晓娟, 蒋科, 陈洋, 石芝铭, 臧行, 张山丽, 黎大兵, 吕威. AlGaN基宽禁带半导体光电材料与器件. 人工晶体学报[J]. 2020, 49(11): 2046-2067, http://lib.cqvip.com/Qikan/Article/Detail?id=7103518501.
[42] Jiang, Ke, Sun, Xiaojuan, Zhang, ZiHui, Ben, Jianwei, Che, Jiamang, Shi, Zhiming, Jia, Yuping, Chen, Yang, Zhang, Shanli, Lv, Wei, Li, Dabing. Polarization-enhanced AlGaN solar-blind ultraviolet detectors. PHOTONICS RESEARCH[J]. 2020, 8(7): 1243-1252, http://lib.cqvip.com/Qikan/Article/Detail?id=7102618646.
[43] Ben, Jianwei, Shi, Zhiming, Zang, Hang, Sun, Xiaojuan, Liu, Xinke, Lu, Wei, Li, Dabing. The formation mechanism of voids in physical vapor deposited AlN epilayer during high temperature annealing. APPLIED PHYSICS LETTERS[J]. 2020, 116(25): https://www.webofscience.com/wos/woscc/full-record/WOS:000543514800001.
[44] CHEN Yang, JIA YuPing, SHI ZhiMing, SUN XiaoJuan, LI DaBing. Van der Waals epitaxy: A new way for growth of Ⅲ-nitrides. 中国科学:技术科学英文版[J]. 2020, 63(3): 528-530, http://lib.cqvip.com/Qikan/Article/Detail?id=7101120270.
[45] Liu BoYang, Song WenTao, Liu ZhengHui, Sun XiaoJuan, Wang KaiMing, Wang YaKun, Zhang ChunYu, Chen KeBei, Xu GengZhao, Xu Ke, Li DaBing. Characterization of phase separation on AlGaN surfaces by in-situ photoluminescence spectroscopy and high spatially resolved surface potential images. ACTA PHYSICA SINICA[J]. 2020, 69(12): https://www.webofscience.com/wos/woscc/full-record/WOS:000560743400016.
[46] Wu, You, Sun, Xiaojuan, Shi, Zhiminq, Jia, Yuping, Jiang, Ke, Ben, Jianwei, Kai, Cuihong, Wang, Yong, Lu, Wei, Li, Dabing. In situ fabrication of Al surface plasmon nanoparticles by metal-organic chemical vapor deposition for enhanced performance of AlGaN deep ultraviolet detectors. NANOSCALE ADVANCES[J]. 2020, 2(5): 1854-1858, https://www.webofscience.com/wos/woscc/full-record/WOS:000536705700045.
[47] Chen, Yang, Zang, Hang, Jiang, Ke, Ben, Jianwei, Zhang, Shanli, Shi, Zhiming, Jia, Yuping, Lu, Wei, Sun, Xiaojuan, Li, Dabing. Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy. APPLIED PHYSICS LETTERS[J]. 2020, 117(5): 051601-, https://www.webofscience.com/wos/woscc/full-record/WOS:000559329700001.
[48] Chen, Yang, Zang, Hang, Jiang, Ke, Ben, Jianwei, Zhang, Shanli, Shi, Zhiming, Jia, Yuping, Lu, Wei, Sun, Xiaojuan, Li, Dabing. Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy (vol 117, 051601, 2020). APPLIED PHYSICS LETTERSnull. 2020, 117(9): https://www.webofscience.com/wos/woscc/full-record/WOS:000568861700001.
[49] Liu, Xinke, Wang, HaoYu, Chiu, HsienChin, Chen, Yuxuan, Li, Dabing, Huang, ChongRong, Kao, HsuanLing, Kuo, HaoChung, Chen, SungWen Huang. Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2020, 814: http://dx.doi.org/10.1016/j.jallcom.2019.152293.
[50] Wu, You, Li, Zhiwen, Ang, KahWee, Jia, Yuping, Shi, Zhiming, Huang, Zhi, Yu, Wenjie, Sun, Xiaojuan, Liu, Xinke, Li, Dabing. Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors. PHOTONICS RESEARCH[J]. 2019, 7(10): 1127-1133, https://www.webofscience.com/wos/woscc/full-record/WOS:000488619700003.
[51] Kai Cuihong, Sun Xiaojuan, Jia Yuping, Shi Zhiming, Jiang Ke, Ben Jianwei, Wu You, Wang Yong, Liu Henan, Li Xiaohang, Li Dabing. Carrier behavior in the vicinity of pit defects in GaN characterized by ultraviolet light-assisted Kelvin probe force microscopy. SCIENCE CHINA. PHYSICS, MECHANICS & ASTRONOMY[J]. 2019, 62(6): https://www.sciengine.com/doi/10.1007/s11433-018-9320-x.
[52] Liu, Xinke, Chen, Yuxuan, Li, Dabing, Wang, ShengWen, Ting, ChaoCheng, Chen, Lin, Ang, KahWee, Qiu, ChengWei, Chueh, YuLun, Sun, Xiaojuan, Kuo, HaoChung. Nearly lattice-matched molybdenum disulfide/gallium nitride heterostructure enabling high-performance phototransistors. PHOTONICS RESEARCH[J]. 2019, 7(3): 311-317, https://www.webofscience.com/wos/woscc/full-record/WOS:000460138000012.
[53] Wang, Lin, Chen, Li, Wong, Swee Liang, Huang, Xin, Liao, Wugang, Zhu, Chunxiang, Lim, YeeFun, Li, Dabing, Liu, Xinke, Chi, Dongzhi, Ang, KohWee. Electronic Devices and Circuits Based on Wafer-Scale Polycrystalline Monolayer MoS2 by Chemical Vapor Deposition. ADVANCED ELECTRONIC MATERIALS[J]. 2019, 5(8): https://www.webofscience.com/wos/woscc/full-record/WOS:000479319100017.
[54] Chen, SungWen Huang, Wang, HaoYu, Hu, Cong, Chen, Yong, Wang, Hao, Wang, Jiale, He, Wei, Sun, Xiaojuan, Chiu, HsienChin, Kuo, HaoChung, Wang, Weicong, Xu, Ke, Li, Dabing, Liu, Xinke. Vertical GaN-on-GaN PIN diodes fabricated on free-standing GaN wafer using an ammonothermal method. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2019, 804: 435-440, http://dx.doi.org/10.1016/j.jallcom.2019.07.021.
[55] ZShi, ZCao, XSun, YJia, DLi, LCavallo, USchwingenschlogl. Uncovering the Mechanism Behind the Improved Stability of 2D OrganicInorganic Hybrid Perovskites. SMALL[J]. 2019, 15(16): https://www.webofscience.com/wos/woscc/full-record/WOS:000467263300012.
[56] Chen, Yuxuan, Li, Kuilong, Li, Zhiwen, Hu, Shengqun, Sun, Xiaojuan, Shi, Zhiming, Liu, Xinke, Li, Dabing. Enhancing thermal properties of few-layer boron nitride by high-k Al2O3 capping layer. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2019, 797: 262-268, http://dx.doi.org/10.1016/j.jallcom.2019.05.115.
[57] JLYuan, YJiang, ZShi, XMGao, YJWang, XJSun. 286 nm monolithic multicomponent system. JAPANESE JOURNAL OF APPLIED PHYSICS[J]. 2019, 58(1): 5-, https://www.webofscience.com/wos/woscc/full-record/WOS:000453032500006.
[58] Shi Zhiming, Sun Xiaojuan, Jia Yuping, Liu Xinke, Zhang Shanli, Qi Zhanbin, Li Dabing. Construction of van der Waals substrates for largely mismatched heteroepitaxy systems using first principles. SCIENCE CHINA. PHYSICS, MECHANICS & ASTRONOMY[J]. 2019, 62(12): 7-, https://www.sciengine.com/doi/10.1007/s11433-019-1448-3.
[59] Jinmin Li, Xinqiang Wang, Dabing Li, Tongbo Wei. Preface to the Special Topic on Deep Ultraviolet Light-Emitting Materials and Devices. 半导体学报:英文版. 2019, 40(12): 1-1, http://lib.cqvip.com/Qikan/Article/Detail?id=7100567363.
[60] 余恒炜, 孙晓娟, 王星辰, 蒋科, 吴忧, 程东碧, 石芝铭, 贾玉萍, 黎大兵. 量子随机数高斯噪声信号发生器. 光学精密工程[J]. 2019, 27(7): 1492-1499, http://lib.cqvip.com/Qikan/Article/Detail?id=7002697587.
[61] Jiang, Ke, Sun, Xiaojuan, Ben, Jianwei, Shi, Zhiming, Jia, Yuping, Wu, You, Kai, Cuihong, Wang, Yong, Li, Dabing. Suppressing the compositional non-uniformity of AlGaN grown on a HVPE-AlN template with large macro-steps. CRYSTENGCOMM[J]. 2019, 21(33): 4864-4873, https://www.webofscience.com/wos/woscc/full-record/WOS:000481891000020.
[62] Jianwei Ben, Xiaojuan Sun, Yuping Jia, Ke Jiang, Zhiming Shi, You Wu, Cuihong Kai, Yong Wang, Xuguang Luo, Zhe Chuan Feng, Dabing Li. Influence of Dislocations on the Refractive Index of AlN by Nanoscale Strain Field. NANOSCALE RESEARCH LETTERS[J]. 2019, 14(1): 1-7, http://dx.doi.org/10.1186/s11671-019-3018-7.
[63] ZhiMing Shi, XiaoJuan Sun, YuPing Jia, XinKe Liu, ShanLi Zhang, ZhanBin Qi, DaBing Li. Construction of van der Waals substrates for largely mismatched heteroepitaxy systems using first principles. 中国科学:物理学、力学、天文学英文版[J]. 2019, 62(12): 89-95, http://lib.cqvip.com/Qikan/Article/Detail?id=7100270254.
[64] Liu, Xinke, Li, Kuilong, Sun, Xiaojuan, Shi, Zhiming, Huang, Zhonghui, Li, Zhiwen, Min, Long, Botcha, Venkatadivakar, Chen, Xingyuan, Xu, Xiangfu, Li, Dabing. Modified band alignment at multilayer MoS2/Al2O3 heterojunctions by nitridation treatment. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2019, 793: 599-603, http://dx.doi.org/10.1016/j.jallcom.2019.04.227.
[65] Liu, Jingying, Shabbir, Babar, Wang, Chujie, Wan, Tao, Ou, Qingdong, Yu, Pei, Tadich, Anton, Jiao, Xuechen, Chu, Dewei, Qi, Dongchen, Li, Dabing, Kan, Ruifeng, Huang, Yamin, Dong, Yemin, Jasieniak, Jacek, Zhang, Yupeng, Bao, Qiaoliang. Flexible, Printable Soft-X-Ray Detectors Based on All-Inorganic Perovskite Quantum Dots. ADVANCED MATERIALS[J]. 2019, 31(30): [66] Du, Chunhua, Jing, Liang, Jiang, Chunyan, Liu, Ting, Pu, Xiong, Sun, Jiangman, Li, Dabing, Hu, Weiguo. An effective approach to alleviating the thermal effect in microstripe array-LEDs via the piezo-phototronic effect. MATERIALS HORIZONS[J]. 2018, 5(1): 116-122, https://www.webofscience.com/wos/woscc/full-record/WOS:000419151900014.
[67] Li, Dabing, Jiang, Ke, Sun, Xiaojuan, Guo, Chunlei. AlGaN photonics: recent advances in materials and ultraviolet devices. ADVANCES IN OPTICS AND PHOTONICSnull. 2018, 10(1): 43-110, https://www.webofscience.com/wos/woscc/full-record/WOS:000428791000002.
[68] Ben, Jianwei, Sun, Xiaojuan, Jia, Yuping, Jiang, Ke, Shi, Zhiming, Liu, Henan, Wang, Yong, Kai, Cuihong, Wu, You, Li, Dabing. Defect evolution in AlN templates on PVD-AlN/sapphire substrates by thermal annealing. CRYSTENGCOMM[J]. 2018, 20(32): 4623-4629, https://www.webofscience.com/wos/woscc/full-record/WOS:000442612000013.
[69] Wu, You, Sun, XiaoJuan, Jia, YuPing, Li, DaBing. Review of improved spectral response of ultraviolet photodetectors by surface plasmon. CHINESE PHYSICS B[J]. 2018, 27(12): http://lib.cqvip.com/Qikan/Article/Detail?id=6100082021.
[70] Feng, Meixin, He, Junlei, Sun, Qian, Gao, Hongwei, Li, Zengcheng, Zhou, Yu, Liu, Jianping, Zhang, Shuming, Li, Deyao, Zhang, Liqun, Sun, Xiaojuan, Li, Dabing, Wang, Huaibing, Ikeda, Masao, Wang, Rongxin, Yang, Hui. Room-temperature electrically pumped InGaN-based microdisk laser grown on Si. OPTICS EXPRESS[J]. 2018, 26(4): 5043-5051, http://ir.sinano.ac.cn/handle/332007/6103.
[71] Fu, Ying Hao, Sun, Xiaojuan, Ben, Jianwei, Jiang, Ke, Jia, Yuping, Liu, Henan, Li, Zhiming, Li, Dabing. Effect of V-Pits on the Property of GaN Epilayer Grown by Metalorganic Chemical Vapor Deposition. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY[J]. 2018, 18(11): 7527-7531, https://www.webofscience.com/wos/woscc/full-record/WOS:000443946600035.
[72] Jiang, Ke, Sun, Xiaojuan, Ben, Jianwei, Jia, Yuping, Liu, Henan, Wang, Yong, Wu, You, Kai, Cuihong, Li, Dabing. The defect evolution in homoepitaxial AlN layers grown by high-temperature metal-organic chemical vapor deposition. CRYSTENGCOMM[J]. 2018, 20(19): 2720-2728, https://www.webofscience.com/wos/woscc/full-record/WOS:000437646000010.
[73] Feng, Meixin, Li, Zengcheng, Wang, Jin, Zhou, Rui, Sun, Qian, Sun, Xiaojuan, Li, Dabing, Gao, Hongwei, Zhou, Yu, Zhang, Shuming, Li, Deyao, Zhang, Liqun, Liu, Jianping, Wang, Huaibing, Ikeda, Masao, Zheng, Xinhe, Yang, Hui. Room-Temperature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si. ACS PHOTONICS[J]. 2018, 5(3): 699-704, http://ir.sinano.ac.cn/handle/332007/6054.
[74] Jia, Yuping, Sun, Xiaojuan, Shi, Zhiming, Jiang, Ke, Liu, Henan, Ben, Jianwei, Li, Dabing. Modulating the Surface State of SiC to Control Carrier Transport in Graphene/SiC. SMALL[J]. 2018, 14(26): https://www.webofscience.com/wos/woscc/full-record/WOS:000436408800015.
[75] Sun, Yi, Zhou, Kun, Feng, Meixin, Li, Zengcheng, Zhou, Yu, Sun, Qian, Liu, Jianping, Zhang, Liqun, Li, Deyao, Sun, Xiaojuan, Li, Dabing, Zhang, Shuming, Ikeda, Masao, Yang, Hui. Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si. LIGHT-SCIENCE & APPLICATIONS[J]. 2018, 7(1): http://ir.sinano.ac.cn/handle/332007/5976.
[76] Wang, Yongjin, Wang, Xin, Zhu, Bingcheng, Shi, Zheng, Yuan, Jialei, Gao, Xumin, Liu, Yuhuai, Sun, Xiaojuan, Li, Dabing, Amano, Hiroshi. Full-duplex light communication with a monolithic multicomponent system. LIGHT-SCIENCE & APPLICATIONS[J]. 2018, 7(1): https://doaj.org/article/5cd40c03f2f0436ebfedddd7e9428fe5.
[77] Chen, Haifeng, Chen, Yiren, Song, Hang, Li, Zhiming, Jiang, Hong, Li, Dabing, Miao, Guoqing, Sun, Xiaojuan, Zhang, Zhiwei. Experimental Evaluation of the Average Energy for Impact Ionization by Holes in Al0.4Ga0.6N Alloy. IEEE PHOTONICS JOURNAL[J]. 2017, 9(2): https://doaj.org/article/4e1d42d7706c4683ae1034f43bd70f7f.
[78] Li, DaBing, Sun, XiaoJuan, Jia, YuPing, Stockman, Mark I, Paudel, Hari P, Song, Hang, Jiang, Hong, Li, ZhiMing. Direct observation of localized surface plasmon field enhancement by Kelvin probe force microscopy. LIGHT-SCIENCE & APPLICATIONS[J]. 2017, 6(8): e17038-, https://www.webofscience.com/wos/woscc/full-record/WOS:000408584200004.
[79] Zhang, Guoqiang, Sun, Shaorui, Jiang, Wenshuai, Miao, Xiang, Zhao, Zhao, Zhang, Xiaoyan, Qu, Dan, Zhang, Duoying, Li, Dabing, Sun, Zaicheng. A Novel Perovskite SrTiO3-Ba2FeNbO6 Solid Solution for Visible Light Photocatalytic Hydrogen Production. ADVANCED ENERGY MATERIALS[J]. 2017, 7(2): http://dx.doi.org/10.1002/aenm.201600932.
[80] Zhang, Zhiwei, Miao, Guoqing, Song, Hang, Li, Dabing, Jiang, Hong, Li, Zhiming, Chen, Yiren, Sun, Xiaojuan. High in content InGaAs near-infrared detectors: growth, structural design and photovoltaic properties. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING[J]. 2017, 123(4): https://www.webofscience.com/wos/woscc/full-record/WOS:000397581200004.
[81] Chen, Haifeng, Chen, YiRen, Song, Hang, Li, ZhiMing, Jiang, Hong, Li, DaBing, Miao, GuoQing, Sun, XiaoJuan, Zhang, ZhiWei. Dependence of dark current and photoresponse on polarization charges for AlGaN-based heterojunction p-i-n photodetectors. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE[J]. 2017, 214(6): https://www.webofscience.com/wos/woscc/full-record/WOS:000403339900018.
[82] Miao, Xiang, Yan, Xinlong, Qu, Dan, Li, Dabing, Tao, Franklin Feng, Sun, Zaicheng. Red Emissive Sulfur, Nitrogen Codoped Carbon Dots and Their Application in Ion Detection and Theraonostics. ACS APPLIED MATERIALS & INTERFACES[J]. 2017, 9(22): 18549-18556, https://www.webofscience.com/wos/woscc/full-record/WOS:000403136400019.
[83] Li, Jinping, Miao, Guoqing, Zeng, Yugang, Zhang, Zhiwei, Li, Dabing, Song, Hang, Jiang, Hong, Chen, Yiren, Sun, Xiaojuan, Li, Zhiming. Relationship between dislocations and misfit strain relaxation in InGaAs/GaAs heterostructures. CRYSTENGCOMM[J]. 2017, 19(1): 88-92, https://www.webofscience.com/wos/woscc/full-record/WOS:000392451600012.
[84] Miao, Xiang, Yan, Xinlong, Qu, Dan, Li, Dabing, Tao, Franklin Feng, Sun, Zaicheng. Red Emissive Sulfur, Nitrogen Codoped Carbon Dots and Their Application in Ion Detection and Theranostics (vol 9, pg 18549, 2017). ACS APPLIED MATERIALS & INTERFACES. 2017, 9(29): 25062-25062, https://www.webofscience.com/wos/woscc/full-record/WOS:000406646300077.
[85] Zhang, XueYu, Sun, ShiHan, Sun, XiaoJuan, Zhao, YanRong, Chen, Li, Yang, Yue, Lu, Wei, Li, DaBing. Plasma-induced, nitrogen-doped graphene-based aerogels for high-performance supercapacitors. LIGHT-SCIENCE & APPLICATIONS[J]. 2016, 5(10): e16130-, http://ir.ciomp.ac.cn/handle/181722/57446.
[86] Li, Dabing. GaN-on-Si laser diode: open up a new era of Si-based optical interconnections. SCIENCE BULLETIN[J]. 2016, 61(22): 1723-1725, http://lib.cqvip.com/Qikan/Article/Detail?id=74888487504849545050484852.
[87] 张进成, 王新强, 黎大兵, 刘斌, 孙钱. 大失配、强极化第三代半导体材料体系生长动力学和载流子调控规律. 发光学报[J]. 2016, 37(11): 1305-1309, http://lib.cqvip.com/Qikan/Article/Detail?id=670638891.
[88] Sun, Xiaojuan, Li, Dabing, Li, Zhiming, Song, Hang, Jiang, Hong, Chen, Yiren, Miao, Guoqing, Zhang, Zhiwei. High spectral response of self-driven GaN-based detectors by controlling the contact barrier height. SCIENTIFIC REPORTS[J]. 2015, 5: http://ir.ciomp.ac.cn/handle/181722/55272.
[89] Liu, Xiaotong, Li, Dabing, Sun, Xiaojuan, Li, Zhiming, Song, Hang, Jiang, Hong, Chen, Yiren. Tunable Dipole Surface Plasmon Resonances of Silver Nanoparticles by Cladding Dielectric Layers. SCIENTIFIC REPORTS[J]. 2015, 5: http://ir.ciomp.ac.cn/handle/181722/55440.
[90] Bao, Guanghong, Li, Dabing, Sun, Xiaojuan, Jiang, Mingming, Li, Zhiming, Song, Hang, Jiang, Hong, Chen, Yiren, Miao, Guoqing, Zhang, Zhiwei. Enhanced spectral response of an AlGaN-based solar-blind ultraviolet photodetector with Al nanoparticles. OPTICS EXPRESS[J]. 2014, 22(20): 24286-24293, http://www.irgrid.ac.cn/handle/1471x/942984.
[91] Chen, Yiren, Song, Hang, Li, Dabing, Sun, Xiaojuan, Jiang, Hong, Li, Zhiming, Miao, Guoqing, Zhang, Zhiwei, Zhou, Yue. Influence of the growth temperature of AlN nucleation layer on AlN template grown by high-temperature MOCVD. MATERIALS LETTERS[J]. 2014, 114(26-28): 26-28, http://dx.doi.org/10.1016/j.matlet.2013.09.096.
[92] Liu, Xiaotong, Li, Dabing, Sun, Xiaojuan, Li, Zhiming, Song, Hang, Jiang, Hong, Chen, Yiren. Stress-induced in situ epitaxial lateral overgrowth of high-quality GaN. CRYSTENGCOMM[J]. 2014, 16(34): 8058-8063, http://www.irgrid.ac.cn/handle/1471x/943416.
[93] Chen, Yiren, Hu, Liqin, Song, Hang, Jiang, Hong, Li, Dabing, Miao, Guoqing, Li, Zhiming, Sun, Xiaojuan, Zhang, Zhiwei, Guo, Tailiang. Optimized performances of tetrapod-like ZnO nanostructures for a triode structure field emission planar light source. NANOSCALE[J]. 2014, 6(22): 13544-13549, http://www.irgrid.ac.cn/handle/1471x/943266.
[94] Chen, Yiren, Song, Hang, Jiang, Hong, Li, Zhiming, Zhang, Zhiwei, Sun, Xiaojuan, Li, Dabing, Miao, Guoqing. Reproducible bipolar resistive switching in entire nitride AlN/n-GaN metal-insulator-semiconductor device and its mechanism. APPLIED PHYSICS LETTERS[J]. 2014, 105(19): http://www.irgrid.ac.cn/handle/1471x/943355.
[95] Sun, Xiaojuan, Li, Dabing, Chen, Yiren, Song, Hang, Jiang, Hong, Li, Zhiming, Miao, Guoqing, Zhang, Zhiwei. In situ observation of two-step growth of AlN on sapphire using high-temperature metal-organic chemical vapour deposition. CRYSTENGCOMM[J]. 2013, 15(30): 6066-6073, http://www.irgrid.ac.cn/handle/1471x/842461.
[96] Li, Dabing, Stockman, Mark I. Electric Spaser in the Extreme Quantum Limit. PHYSICAL REVIEW LETTERS[J]. 2013, 110(10): http://www.irgrid.ac.cn/handle/1471x/842384.
[97] 贾辉, 陈一仁, 孙晓娟, 黎大兵, 宋航, 蒋红, 缪国庆, 李志明. 预通三甲基铝对AlN薄膜的结构与应变的影响. 发光学报[J]. 2012, 33(1): 82-87, http://lib.cqvip.com/Qikan/Article/Detail?id=40878503.
[98] 王新建, 宋航, 黎大兵, 蒋红, 李志明, 缪国庆, 陈一仁, 孙晓娟. 氮化铝薄膜的硅热扩散掺杂研究(英文). 发光学报[J]. 2012, 768-773, http://ir.ciomp.ac.cn/handle/181722/27435.
[99] Sun, Xiaojuan, Li, Dabing, Song, Hang, Chen, Yiren, Jiang, Hong, Miao, Guoqing, Li, Zhiming. Short-wavelength light beam in situ monitoring growth of InGaN/GaN green LEDs by MOCVD. NANOSCALE RESEARCH LETTERS[J]. 2012, 7: http://ir.ciomp.ac.cn/handle/181722/34343.
[100] 贾辉, 陈一仁, 孙晓娟, 黎大兵, 宋航, 蒋红, 缪国庆, 李志明. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文). 发光学报[J]. 2012, 33(1): 82-87, http://ir.ciomp.ac.cn/handle/181722/28230.
[101] You, Kun, Jiang, Hong, Li, Dabing, Sun, Xiaojuan, Song, Hang, Chen, Yiren, Li, Zhiming, Miao, Guoqing, Liu, Hongbo. Shift of responsive peak in GaN-based metal-insulator-semiconductor photodetectors. APPLIED PHYSICS LETTERS[J]. 2012, 100(12): http://ir.ciomp.ac.cn/handle/181722/24695.
[102] 王新建, 宋航, 黎大兵, 蒋红, 李志明, 缪国庆, 孙晓娟, 陈一仁, 贾辉. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文). 发光学报[J]. 2012, 33(2): 227-232, http://lib.cqvip.com/Qikan/Article/Detail?id=40878537.
[103] Xiaojuan Sun, Dabing Li, Hang Song, Yiren Chen, Hong Jiang, Guoqing Miao, Zhiming Li. Short-wavelength light beam in situ monitoring growth of InGaN. NANOSCALE RESEARCH LETTERS. 2012, 7(1): 282-282, http://dx.doi.org/10.1186/1556-276X-7-282.
[104] Jia Hui, Chen Yiren, Sun Xiaojuan, Li Dabing, Song Hang, Jiang Hong, Miao Guoqing, Li Zhiming. AlN插入层对a-AlGaN的外延生长的影响(英文). 发光学报[J]. 2012, 33(5): 519-524, http://lib.cqvip.com/Qikan/Article/Detail?id=41980903.
[105] 贾辉, 陈一仁, 孙晓娟, 黎大兵, 宋航, 蒋红, 缪国庆, 李志明. 初始化生长条件对a-GaN中应变的影响. 发光学报[J]. 2012, 33(6): 581-585, http://lib.cqvip.com/Qikan/Article/Detail?id=42278189.
[106] 贾辉, 陈一仁, 孙晓娟, 黎大兵, 宋航, 蒋红, 缪国庆, 李志明. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响. 发光学报[J]. 2012, 33(8): 879-882, http://lib.cqvip.com/Qikan/Article/Detail?id=42993523.
[107] 王新建, 宋航, 黎大兵, 蒋红, 李志明, 缪国庆, 陈一仁, 孙晓娟. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文). 发光学报[J]. 2012, 33(10): 1089-1094, http://lib.cqvip.com/Qikan/Article/Detail?id=43609428.
[108] Li, Dabing, Sun, Xiaojuan, Song, Hang, Li, Zhiming, Chen, Yiren, Jiang, Hong, Miao, Guoqing. Realization of a High-Performance GaN UV Detector by Nanoplasmonic Enhancement. ADVANCED MATERIALS[J]. 2012, 24(6): 845-+, http://ir.ciomp.ac.cn/handle/181722/24636.
[109] 贾辉, 陈一仁, 孙晓娟, 黎大兵, 宋航, 蒋红, 缪国庆, 李志明. AlN插入层对a-AlGaN的外延生长的影响(英文). 发光学报[J]. 2012, 33(5): 519-524, http://lib.cqvip.com/Qikan/Article/Detail?id=41980903.
[110] Jia Hui, Chen Yiren, Sun Xiaojuan, Li Dabing, Song Hang, Jiang Hong, Miao Guoqing, Li Zhiming. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文). 发光学报[J]. 2012, 33(1): 82-87, http://ir.ciomp.ac.cn/handle/181722/28230.
[111] 王新建, 宋航, 黎大兵, 蒋红, 李志明, 缪国庆, 陈一仁, 孙晓娟. 氮化铝薄膜的硅热扩散掺杂研究. 发光学报[J]. 2012, 33(7): 768-773, http://lib.cqvip.com/Qikan/Article/Detail?id=42719457.
[112] 尤坤, 宋航, 黎大兵, 刘洪波, 李志明, 陈一仁, 蒋红, 孙晓娟, 缪国庆. GaN基MIS紫外探测器的电学及光电特性. 发光学报[J]. 2012, 33(1): 55-61, http://lib.cqvip.com/Qikan/Article/Detail?id=40878497.
[113] Chen, Yiren, Jiang, Hong, Li, Dabing, Song, Hang, Li, Zhiming, Sun, Xiaojuan, Miao, Guoqing, Zhao, Haifeng. Improved field emission performance of carbon nanotube by introducing copper metallic particles. NANOSCALE RESEARCH LETTERS[J]. 2011, 6(1): 537-537, http://ir.ciomp.ac.cn/handle/181722/4073.
[114] 黎大兵. Influence of threading dislocations on GaN-based metal-semiconductormetal. Applied Physcis Letters. 2011, [115] Sun, Xiaojuan, Li, Dabing, Jiang, Hong, Li, Zhiming, Song, Hang, Chen, Yiren, Miao, Guoqing. Improved performance of GaN metal-semiconductor-metal ultraviolet detectors by depositing SiO2 nanoparticles on a GaN surface. APPLIED PHYSICS LETTERS[J]. 2011, 98(12): http://ir.ciomp.ac.cn/handle/181722/26082.
[116] Liu, Xia, Song, Hang, Miao, Guoqing, Jiang, Hong, Cao, Lianzhen, Li, Dabing, Sun, Xiaojuan, Chen, Yiren. Influence of thermal annealing duration of buffer layer on the crystalline quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD. APPLIED SURFACE SCIENCE[J]. 2011, 257(6): 1996-1999, http://dx.doi.org/10.1016/j.apsusc.2010.09.041.
[117] 宋航, 黎大兵, 陈一仁. Influence of threading dislocations on GaN-based metal…. APPLIED PHYSICS LETTERS[J]. 2011, 98(1): 011108-1, http://ir.ciomp.ac.cn/handle/181722/4078.
[118] Liu, Xia, Song, Hang, Miao, Guoqing, Jiang, Hong, Cao, Lianzhen, Sun, Xiaojuan, Li, Dabing, Chen, Yiren, Li, Zhiming. Influence of buffer layer thickness and epilayer's growth temperature on crystalline quality of InAs0.6P0.4/Inp grown by LP-MOCVD. SOLID STATE COMMUNICATIONS[J]. 2011, 151(12): 904-907, http://dx.doi.org/10.1016/j.ssc.2011.03.027.
[119] Shi, K, Liu, X L, Li, D B, Wang, J, Song, H P, Xu, X Q, Wei, H Y, Jiao, C M, Yang, S Y, Song, H, Zhu, Q S, Wang, Z G. Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy. APPLIED SURFACE SCIENCE[J]. 2011, 257(18): 8110-8112, http://dx.doi.org/10.1016/j.apsusc.2011.04.118.
[120] 黎大兵, 宋航, 陈一仁. Improved performance of GaN metal-semiconductor-metal ultraviolet detectors by…. APPLIED PHYSICS LETTERS[J]. 2011, 98(12): 121117-1, http://ir.ciomp.ac.cn/handle/181722/4074.
[121] Li, Dabing, Sun, Xiaojuan, Song, Hang, Li, Zhiming, Jiang, Hong, Chen, Yiren, Miao, Guoqing, Shen, Bo. Effect of asymmetric Schottky barrier on GaN-based metal-semiconductor-metal ultraviolet detector. APPLIED PHYSICS LETTERS[J]. 2011, 99(26): http://ir.ciomp.ac.cn/handle/181722/4053.
[122] Shi, K, Li, D B, Song, H P, Guo, Y, Wang, J, Xu, X Q, Liu, J M, Yang, A L, Wei, H Y, Zhang, B, Yang, S Y, Liu, X L, Zhu, Q S, Wang, Z G. Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy. NANOSCALE RESEARCH LETTERS[J]. 2011, 6(1): http://ir.semi.ac.cn/handle/172111/21263.
[123] Liu, Xia, Song, Hang, Miao, Guoqing, Jiang, Hong, Cao, Lianzhen, Li, Dabing, Sun, Xiaojuan, Chen, Yiren, Li, Zhiming. Effect of buffer layer annealing temperature on the crystalline quality of In0.82Ga0.18As layers grown by two-step growth method. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2011, 509(24): 6751-6755, http://ir.ciomp.ac.cn/handle/181722/26074.
[124] 黎大兵. Determination of InN/Diamond Heterojunction Band Offset…. NANOSCALE RESEARCH LETTERS[J]. 2011, 6(1): 50-, http://ir.ciomp.ac.cn/handle/181722/4049.
[125] Li, Dabing, Sun, Xiaojuan, Song, Hang, Li, Zhiming, Chen, Yiren, Miao, Guoqing, Jiang, Hong. Influence of threading dislocations on GaN-based metal-semiconductor-metal ultraviolet photodetectors. APPLIED PHYSICS LETTERS[J]. 2011, 98(1): http://ir.ciomp.ac.cn/handle/181722/26053.
[126] Li DaBing, Hu WeiGuo, Hideto, Miyake, Kazumasa, Hiramatsu, Song Hang. Enhanced deep ultraviolet emission from Si-doped AlxGa1-xN/AlN MQWs. CHINESEPHYSICSB[J]. 2010, 19(12): http://lib.cqvip.com/Qikan/Article/Detail?id=36050962.
[127] Liu, Xia, Jiang, Hong, Miao, Guoqing, Song, Hang, Cao, Lianzhen, Li, Zhiming, Li, Dabing. Effect of epilayer's growth temperature on crystalline quality of InAs0.6P0.4/InP grown by two-step growth method. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2010, 506(2): 530-532, http://ir.ciomp.ac.cn/handle/181722/26156.
[128] Yu, Shuzhen, Miao, Guoqing, Jin, Yixin, Zhang, Ligong, Song, Hang, Jiang, Hong, Li, Zhiming, Li, Dabing, Sun, Xiaojuan. Growth and optical properties of catalyst-free InP nanowires on Si (100) substrates. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES[J]. 2010, 42(5): 1540-1543, http://ir.ciomp.ac.cn/handle/181722/26178.
[129] 蒋红, 宋航, 赵海峰, 李志明, 黎大兵. 电泳和电镀法增强碳纳米管场发射特性的研究. 真空科学与技术学报[J]. 2010, 64-67, http://lib.cqvip.com/Qikan/Article/Detail?id=32763712.
[130] 缪国庆, 张立功, 宋航, 蒋红, 黎大兵, 李志明, 孙晓娟. Si衬底上InP纳米线的晶体结构和光学性质. 发光学报[J]. 2010, 31(5): 767-772, http://lib.cqvip.com/Qikan/Article/Detail?id=35499542.
[131] 宋航, 蒋红, 缪国庆, 黎大兵, 李志明, 孙晓娟, 陈一仁. 多层GaSb(QDs)/GaAs生长中量子点的聚集及发光特性. 发光学报[J]. 2010, 31(6): 859-863, http://lib.cqvip.com/Qikan/Article/Detail?id=36325789.
[132] Hu, Weiguo, Ma, Bei, Li, Dabing, Miyagawa, Reina, Miyake, Hideto, Hiramatsu, Kazumasa. Effects of the AlN Interlayer on the Distribution and Mobility of Two-Dimensional Electron Gas in AlGaN/AlN/GaN Heterojunctions. JAPANESE JOURNAL OF APPLIED PHYSICS[J]. 2010, 49(3): 035701-, http://www.irgrid.ac.cn/handle/1471x/611180.
[133] Cao, Lianzhen, Jiang, Hong, Song, Hang, Li, Zhiming, Liu, Xia, Guo, Wanguo, Yan, Dawei, Sun, Xiaojuan, Zhao, Haifeng, Miao, Guoqing, Li, Dabing. Aloetic-Shaped SiC Nanowires: Synthesis and Field Electron Emission Properties. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY[J]. 2010, 10(3): 2104-2107, http://www.irgrid.ac.cn/handle/1471x/611436.
[134] Hu, Weiguo, Ma, Bei, Li, Dabing, Miyake, Hideto, Hiramatsu, Kazumasa. In-plane electric field induced by polarization and lateral photovoltaic effect in a-plane GaN. APPLIED PHYSICS LETTERS[J]. 2009, 94(23): http://ir.ciomp.ac.cn/handle/181722/26347.
[135] Sun, Xiaojuan, Hu, Lizhong, Song, Hang, Li, Zhiming, Li, Dabing, Jiang, Hong, Miao, Guoqing. Selective wet etching of Al0.7Ga0.3As layer in concentrated HCl solution for peeling off GaAs microtips. SOLID-STATE ELECTRONICS[J]. 2009, 53(9): 1032-1035, http://dx.doi.org/10.1016/j.sse.2009.04.009.
[136] Li, Dabing, Ma, Bei, Miyagawa, Reina, Hu, Weiguo, Narukawa, Mitsuhisa, Miyake, Hideto, Hiramatsu, Kazumasa. Photoluminescence study of Si-doped a-plane GaN grown by MOVPE. JOURNAL OF CRYSTAL GROWTH[J]. 2009, 311(10): 2906-2909, http://dx.doi.org/10.1016/j.jcrysgro.2009.01.041.
[137] Hu, Weiguo, Ma, Bei, Li, Dabing, Narukawa, Mitsuhisa, Miyake, Hideto, Hiramatsu, Kazumasa. Mobility enhancement of 2DEG in MOVPE-grown AlGaN/AlN/GaN HEMT structure using vicinal (0001) sapphire. SUPERLATTICES AND MICROSTRUCTURES[J]. 2009, 46(6): 812-816, http://dx.doi.org/10.1016/j.spmi.2009.09.008.
[138] Yu, Shuzhen, Miao, Guoqing, Jin, Yixin, Zhang, Tiemin, Song, Hang, Jiang, Hong, Li, Zhiming, Li, Dabing, Sun, Xiaojuan. Investigation on growth related aspects of catalyst-free InP nanowires grown by metal organic chemical vapor deposition. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2009, 479(1-2): 832-834, http://ir.ciomp.ac.cn/handle/181722/26322.
[139] Yang Chen, Ke Jiang, Hang Zang, Jianwei Ben, Shanli Zhang, Zhiming Shi, Yuping Jia, Wei L, Dabing Li, Xiaojuan Sun. In situ growth of high-quality wafer-scale graphene on dielectric substrate for high-responsivity ultraviolet photodetector. CARBON. http://dx.doi.org/10.1016/j.carbon.2020.12.055.

科研活动

   
科研项目
(1) 新型光电子器件与材料,主持,国家级,2014-01--2016-12
(2) 表面等离激元增强AlGaN基深紫外LED研究,主持,国家级,2013-01--2016-12
(3) XXX器件与材料,参与,国家级,2012-01--2014-12
(4) 氮化物半导体激子束缚调控和高密度激子发光机理研究,参与,国家级,2011-01--2015-12

合作情况


目前,与日本、美国等大学和研究机构建立了良好的合作关系。

指导学生

已指导学生

贾辉  博士研究生  070205-凝聚态物理  

孙晓娟  博士研究生  070205-凝聚态物理  

陈一仁  博士研究生  070205-凝聚态物理  

现指导学生

包广宏  硕士研究生  070205-凝聚态物理  

徐昌一  硕士研究生  070205-凝聚态物理  

蒋科  硕士研究生  070205-凝聚态物理  

贲建伟  硕士研究生  070205-凝聚态物理  

刘小桐  博士研究生  070205-凝聚态物理