基本信息
吴振华  男  博导  中国科学院微电子研究所
电子邮件: wuzhenhua@ime.ac.cn
通信地址: 北京市朝阳区北土城西路3号,微电子研究所
邮政编码: 100029

研究领域

先进技术节点CMOS关键工艺与器件架构,超陡亚阈值摆幅低功耗器件,电子自旋/能谷相关新型量子器件,纳米器件中的热电效应与探测,先进TCAD仿真技术与应用。

招生信息

每年计划招收硕士研究生1名,博士研究生(包括直博)1名。同时欢迎优秀本科生进组开展科研实习。

招生专业
080903-微电子学与固体电子学
080901-物理电子学
招生方向
FinFET, Nanowire FET, 新原理低功耗CMOS架构与关键技术
低维介观系统中电荷/自旋量子输运特性
深度学习方法与半导体器件TCAD仿真

教育背景

2006-09--2011-07   中国科学院半导体研究所   博士
2002-09--2006-07   南京大学   学士

教授课程

集成电路制造工艺与研究方法

获奖及荣誉

2016年度,中国科学院海外人才引进项目。



奖励信息
(1) 中国科学院大学优秀本科生指导教师, 研究所(学校), 2019
专利成果
[1] 张青竹, 殷华湘, 曹磊, 张兆浩, 顾杰, 田佳佳, 李俊杰, 姚佳欣, 李永亮, 张永奎, 吴振华, 赵鸿滨, 罗军, 王文武, 屠海令, 叶甜春. 一种半导体器件的制备方法及半导体器件. CN: CN114005826A, 2022-02-01.
[2] 甘维卓, 吴振华, 许高博, 李俊杰, 殷华湘, 郭鸿. 冷源MOS晶体管及制作方法. CN: CN113745314A, 2021-12-03.
[3] 罗彦娜, 殷华湘, 吴振华, 张青竹, 曹磊. 一种CFET结构、其制备方法以及应用其的半导体器件. CN: CN113206090A, 2021-08-03.
[4] 张青竹, 殷华湘, 曹磊, 张兆浩, 田佳佳, 顾杰, 李俊杰, 姚佳欣, 李永亮, 张永奎, 吴振华, 赵鸿滨, 罗军, 王文武, 屠海令, 叶甜春. 一种Z 2 -FET器件及其制备方法、一种半导体器件. CN: CN113178489A, 2021-07-27.
[5] 顾杰, 殷华湘, 张青竹, 张兆浩, 吴振华. 一种量子点器件及其制备方法. CN: CN113109974A, 2021-07-13.
[6] 张亚东, 刘战峰, 吴振华, 殷华湘. 一种晶圆级二维材料的转移方法及器件制备方法. CN: CN113035781A, 2021-06-25.
[7] 吴振华, 甘维卓, 张兆浩, 张永奎, 李俊杰, 殷华湘, 朱慧珑, 郭鸿. 一种半导体器件及其制造方法、集成电路、电子设备. CN: CN112652664A, 2021-04-13.
[8] 张青竹, 殷华湘, 闫江, 吴振华. 半导体器件及其制作方法. CN: CN107068769B, 2020-12-08.
[9] 李永亮, 都安彦, 吴振华, 李超雷, 王文武. 一种半导体器件及其制作方法及包括该器件的电子设备. CN: CN110224029A, 2019-09-10.
[10] 李俊杰, 李永亮, 周娜, 杨涛, 张青竹, 王桂磊, 李俊峰, 吴振华, 殷华湘, 朱慧珑, 王文武. 纳米线、纳米线围栅器件以及纳米孔筛的制备方法. CN: CN110164762A, 2019-08-23.
[11] 吴振华, 李俊杰, 郭鸿, 甘维卓, 殷华湘, 朱慧珑, 王文武. 半导体器件和制作方法. CN: CN110061060A, 2019-07-26.
[12] 吴振华, 李俊杰, 郭鸿, 甘维卓",null,null,"王文武. 半导体器件和制作方法. CN: CN110061060A, 2019-07-26.
[13] 李俊杰, 王桂磊, 李永亮, 周娜, 杨涛, 傅剑宇, 李俊峰, 吴振华, 殷华湘, 朱慧珑, 王文武. 选择性刻蚀方法及纳米针尖结构的制备方法. CN: CN110002393A, 2019-07-12.
[14] 甘维卓, 张永奎, 李俊杰, 吴振华, 郭鸿, 殷华湘, 朱慧珑, 王文武. 冷源结构MOS晶体管及其制作方法. CN: CN109920842A, 2019-06-21.
[15] 吴振华, 郭鸿, 李俊杰. MOS器件的制作方法. CN: CN109712892A, 2019-05-03.
[16] 李俊杰, 吴振华, 李永亮, 周娜, 张青竹, 王桂磊, 李俊峰, 王文武. 环栅纳米线晶体管及其制备方法. CN: CN109599335A, 2019-04-09.
[17] 朱慧珑. 半导体器件及其制造方法及包括该器件的电子设备. CN: CN109326650A, 2019-02-12.
[18] 李俊杰, 吴振华, 张青竹, 王文武. 包括纳米线的器件与其制作方法. CN: CN108878422A, 2018-11-23.
[19] 李俊杰, 吴振华, 李永亮, 唐波, 王红丽, 王文武. 一种纳米线沟道制作方法. CN: CN108807149A, 2018-11-13.
[20] 李俊杰, 吴振华, 张丹, 罗军, 王文武. 一种纳米线的制作方法. CN: CN108807170A, 2018-11-13.
[21] 张青竹, 殷华湘, 闫江, 吴振华, 周章渝, 秦长亮, 张严波, 张永奎. 半导体器件及其制作方法. CN: CN108735608A, 2018-11-02.
[22] 殷华湘, 顾杰, 张青竹, 许高博, 吴振华. 量子点器件及其制作方法. CN: CN108417635A, 2018-08-17.
[23] 张青竹, 殷华湘",null,"吴振华. 半导体器件及其制作方法. CN: CN107068769A, 2017-08-18.
[24] 张青竹, 殷华湘, 闫江, 吴振华, 周章渝, 秦长亮, 张严波, 张永奎. 半导体器件及其制作方法. CN: CN103311284B, 2015-11-25.

出版信息

   
发表论文
[1] Liu, JiangTao, Zhang, Yuan, Cai, Xunming, Huang, Jinbao, Luo, Kun, Li, Hongxu, Zhang, Dejian, Wu, Zhenhua. Robust binarized data analysis with computational ghost imaging. OPTIK[J]. 2023, 272: http://dx.doi.org/10.1016/j.ijleo.2022.170378.
[2] Lin, Liangzhong, Zhan, Guohui, Ling, Yiyun, Lou, Wenkai, Wu, Zhenhua. Electron tunneling through HgTe/CdTe quantum wells with all-electrical superlattice structures. PHYSICA B-CONDENSED MATTER[J]. 2022, 646: http://dx.doi.org/10.1016/j.physb.2022.414344.
[3] Cao, Lei, Zhang, Qingzhu, Luo, Yanna, Gu, Jie, Gan, Weizhuo, Lu, Peng, Yao, Jiaxin, Xu, Haoqing, Zhao, Peng, Luo, Kun, Wu, Yongqin, Bu, Weihai, Wu, Zhenhua, Yin, Huaxiang. Novel Channel-First Fishbone FETs With Symmetrical Threshold Voltages and Balanced Driving Currents Using Single Work Function Metal Process. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2022, 69(11): 5971-5977, http://dx.doi.org/10.1109/TED.2022.3206179.
[4] Xu, Yanli, Zhang, Chuan, Li, Weimin, Li, Rong, Liu, Jiangtao, Liu, Ze, Wu, Zhenhua. High sensitivity ultraviolet graphene-metamaterial integrated electro-optic modulator enhanced by superlubricity. NANOPHOTONICS[J]. 2022, 11(16): 3547-3557, http://dx.doi.org/10.1515/nanoph-2022-0185.
[5] Xu, Haoqing, Gan, Weizhuo, Cao, Lei, Yang, Cheng, Wu, Jiahao, Zhou, Mi, Qu, Hengze, Zhang, Shengli, Yin, Huaxiang, Wu, Zhenhua. A Machine Learning Approach for Optimization of Channel Geometry and Source/Drain Doping Profile of Stacked Nanosheet Transistors. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2022, 69(7): 3568-3574, http://dx.doi.org/10.1109/TED.2022.3175708.
[6] Gu, Jie, Zhang, Qingzhu, Wu, Zhenhua, Luo, Yanna, Cao, Lei, Cai, Yuwei, Yao, Jiaxin, Zhang, Zhaohao, Xu, Gaobo, Yin, Huaxiang, Luo, Jun, Wang, Wenwu. Narrow Sub-Fin Technique for Suppressing Parasitic-Channel Effect in Stacked Nanosheet Transistors. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY[J]. 2022, 10: 35-39, http://dx.doi.org/10.1109/JEDS.2021.3130123.
[7] Luo, Yanna, Zhang, Qingzhu, Cao, Lei, Gan, Weizhuo, Xu, Haoqing, Cao, Yu, Gu, Jie, Xu, Renren, Yan, Gangping, Huo, Jiali, Wu, Zhenhua, Yin, Huaxiang. Investigation of Novel Hybrid Channel Complementary FET Scaling Beyond 3-nm Node From Device to Circuit. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2022, 69(7): 3581-3588, http://dx.doi.org/10.1109/TED.2022.3176843.
[8] Zhang, Dan, Su, Xiaojing, Chang, Hao, Xu, Hao, Wang, Xiaolei, He, Xiaobin, Li, Junjie, Zhao, Fei, Yao, Qide, Luo, Yanna, Ma, Xueli, Yang, Hong, Li, Yongliang, Wu, Zhenhua, Su, Yajuan, Yang, Tao, Wei, Yayi, Du, Anyan, Zhu, Huilong, Li, Junfeng, Yin, Huaxiang, Luo, Jun, Ye, Tianchun, Wang, Wenwu. Advanced process and electron device technology. TSINGHUA SCIENCE AND TECHNOLOGY[J]. 2022, 27(3): 534-558, http://dx.doi.org/10.26599/TST.2021.9010049.
[9] Li, Xinhao, Zhu, Huilong, Gan, Weizhuo, Huang, Weixing, Wu, Zhenhua. A Three-Dimensional Simulation Study of the Novel Comb-Like-Channel Field-Effect Transistors for the 5-nm Technology Node and Beyond. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2022, 69(9): 4786-4790, http://dx.doi.org/10.1109/TED.2022.3188589.
[10] Zhan, Guohui, Yang, Zhilong, Luo, Kun, Zhang, Dong, Lou, Wenkai, Liu, Jiangtao, Wu, Zhenhua, Chang, Kai. Spin-dependent tunneling in 2D MnBi2Te4-based magnetic tunnel junctions. MRS BULLETIN[J]. 2022, 47(12): 1177-1184, http://dx.doi.org/10.1557/s43577-022-00381-8.
[11] Lin, LiangZhong, Ling, YiYun, Zhang, Dong, Wu, ZhenHua. Electron tunneling through double-electric barriers on HgTe/CdTe heterostructure interface. CHINESE PHYSICS B[J]. 2022, 31(11): 487-492, [12] Sun, Xiaoting, Zhang, Yadong, Jia, Kunpeng, Tian, Guoliang, Yu, Jiahan, Xiang, Jinjuan, Yang, Ruixia, Wu, Zhenhua, Yin, Huaxiang. Improved performance of MoS2 FET by in situ NH3 doping in ALD Al2O3 dielectric. CHINESE PHYSICS B[J]. 2022, 31(7): 560-564, [13] Liu, Jianhua, Luo, Kun, Chang, Hudong, Sun, Bing, Zhang, Shengli, Wu, Zhenhua. Tunable giant magnetoresistance ratio in bilayer CuPc molecular devices. RSC ADVANCES[J]. 2022, 12(6): 3386-3393, http://dx.doi.org/10.1039/d1ra07360e.
[14] Yang, Jialin, Chen, Chuyao, Zhang, Jingwen, Zhou, Wenhan, Qu, Hengze, Li, Jing, Guo, Tingting, Shi, Xiaoqin, Wu, Zhenhua, Zhang, Shengli. High-Performance p-type 2D FET Based on Monolayer GeC with High Hole Mobility: A DFT-NEGF Study. ADVANCED ELECTRONIC MATERIALS[J]. 2022, 8(10): http://dx.doi.org/10.1002/aelm.202200388.
[15] Qi, Guodong, Gan, Weizhuo, Xu, Lijun, Liu, Jiangtao, Yang, Qihang, Zhu, Xiaona, Zhou, Jiuren, Ma, Xinyu, Hu, Guangxi, Chen, Tao, Yu, Shaofeng, Wu, Zhenhua, Yin, Huaxiang, Lu, Ye. The Device and Circuit Level Benchmark of Si-Based Cold Source FETs for Future Logic Technology. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2022, 69(6): 3483-3489, http://dx.doi.org/10.1109/TED.2022.3164372.
[16] Lin, Liangzhong, Zhu, Jiaji, Zhang, Dong, Wu, Zhenhua. Spin-polarized charge transport through a single barrier in HgTe/CdTe heterostructure interface. SOLID STATE COMMUNICATIONS[J]. 2022, 350: http://dx.doi.org/10.1016/j.ssc.2022.114772.
[17] Wang, Zhen, Li, Xiaojing, Wu, Zhenhua. Electronic and optical properties of the edge states in phosphorene quantum rings. APPLIED SURFACE SCIENCE[J]. 2021, 541: http://dx.doi.org/10.1016/j.apsusc.2020.148317.
[18] Huang, Weixing, Zhu, Huilong, Zhang, Yongkui, Wu, Zhenhua, Jia, Kunpeng, Yin, Xiaogen, Li, Yangyang, Li, Chen, Ai, Xuezheng, Huo, Qiang, Li, Junfeng. Investigation of negative DIBL effect for ferroelectric-based FETs to improve MOSFETs and CMOS circuits. MICROELECTRONICS JOURNAL[J]. 2021, 114: http://dx.doi.org/10.1016/j.mejo.2021.105110.
[19] Zhang, ShuHui, Yang, Jin, Shao, DingFu, Wu, Zhenhua, Yang, Wen. Robust wavefront dislocations of Friedel oscillations in gapped graphene. PHYSICAL REVIEW B[J]. 2021, 103(16): http://dx.doi.org/10.1103/PhysRevB.103.L161407.
[20] Gu, Jie, Wu, Zhenhua, Zhang, Qinzhu, Yao, Jiaxin, Zhang, Zhaohao, Li, Junjie, Cai, Yuwei, Xu, Renren, Xu, Gaobo, Yin, Huaxiang, Li, Junfeng, Wang, Wenwu, Ye, Tianchun. Quantum Dot With a Diamond-Shaped Channel MOSFET on a Bulk Si Substrate. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2021, 68(1): 405-410, https://www.webofscience.com/wos/woscc/full-record/WOS:000602689000026.
[21] Zhang, Qingzhu, Gu, Jie, Xu, Renren, Cao, Lei, Li, Junjie, Wu, Zhenhua, Wang, Guilei, Yao, Jiaxin, Zhang, Zhaohao, Xiang, Jinjuan, He, Xiaobin, Kong, Zhenzhen, Yang, Hong, Tian, Jiajia, Xu, Gaobo, Mao, Shujuan, Radamson, Henry H, Yin, Huaxiang, Luo, Jun. Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices. NANOMATERIALS[J]. 2021, 11(3): https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7998492/.
[22] Zhang, Yadong, Sun, Xiaoting, Jia, Kunpeng, Yin, Huaxiang, Luo, Kun, Yu, Jiahan, Wu, Zhenhua. Enhancement of InSe Field-Effect-Transistor Performance against Degradation of InSe Film in Air Environment. NANOMATERIALS[J]. 2021, 11(12): http://dx.doi.org/10.3390/nano11123311.
[23] Cai, Yuwei, Zhang, Qinzhu, Zhang, Zhaohao, Xu, Gaobo, Luo, Yanna, Gu, Jie, Gan, Weizhuo, Lin, Xiang, Xu, Renren, Wu, Zhenhua, Yin, Huaxiang, Wang, Wenwu, Xu, Qiuxia, Ye, Tianchun. Endurance Characteristics of Negative Capacitance FinFETs With Negligible Hysteresis. IEEE ELECTRON DEVICE LETTERS[J]. 2021, 42(2): 260-263, https://www.webofscience.com/wos/woscc/full-record/WOS:000613404400032.
[24] Zhang, Qingzhu, Tu, Hailing, Zhang, Zhaohao, Li, Junjie, Wei, Feng, Wang, Guilei, Han, Jiaohao, Zhao, Hongbin, Zhang, Yongkui, Li, Yongliang, Wu, Zhenhua, Gu, Jie, Xu, Renren, Bai, Guibin, Xu, Gaobo, Wei, Qianhui, Fan, Yanyan, Yan, Jiang, Li, Bo, Xu, Qiuxia, Yin, Huaxiang, Wang, Wenwu. Optimization of zero-level interlayer dielectric materials for gate-all-around silicon nanowire channel fabrication in a replacement metal gate process. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING[J]. 2021, 121: http://dx.doi.org/10.1016/j.mssp.2020.105434.
[25] Zhou, Wenhan, Zhang, Shengli, Cao, Jiang, Wu, Zhenhua, Wang, Yangyang, Zhang, Yunwei, Yan, Zhong, Qu, Hengze, Zeng, Haibo. Modulating tunneling width and energy window for high-on-current two-dimensional tunnel field-effect transistors. NANO ENERGY[J]. 2021, 81: http://dx.doi.org/10.1016/j.nanoen.2020.105642.
[26] Cai, Yuwei, Zhang, Qingzhu, Zhang, Zhaohao, Xu, Gaobo, Wu, Zhenhua, Gu, Jie, Li, Junjie, Xiang, Jinjuan, Yin, Huaxiang. Influence of Applied Stress on the Ferroelectricity of Thin Zr-Doped HfO2 Films. APPLIED SCIENCES-BASEL[J]. 2021, 11(9): http://dx.doi.org/10.3390/app11094295.
[27] Zhang, Fan, Peng, Yue, Deng, Xinran, Huo, Jiali, Liu, Yan, Han, Genquan, Wu, Zhenhua, Yin, Huaxiang, Hao, Yue. Theoretical Study of Negative Capacitance FinFET With Quasi-Antiferroelectric Material. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2021, 68(6): 3074-3079, http://dx.doi.org/10.1109/TED.2021.3074352.
[28] Gu, Jie, Zhang, Qingzhu, Wu, Zhenhua, Yao, Jiaxin, Zhang, Zhaohao, Zhu, Xiaohui, Wang, Guilei, Li, Junjie, Zhang, Yongkui, Cai, Yuwei, Xu, Renren, Xu, Gaobo, Xu, Qiuxia, Yin, Huaxiang, Luo, Jun, Wang, Wenwu, Ye, Tianchun. Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs. NANOMATERIALS[J]. 2021, 11(2): https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7911106/.
[29] Ying Zhao, 汪令飞, Zhenhua Wu, Franz Schanovsky, 许晓欣, Hong Yang, Lai, jinru, Donyang Liu, Xichen Chuai, Yue Su, Xingsheng Wang, Ling Li, Ming Liu. A Unified Physical BTI Compact Model in Variability-Aware DTCO Flow: Device Characterization and Circuit Evaluation on Reliability of Scaling Technology Nodes. Symposium on VLSI Technology,null. 2021, [30] Liu, JianHua, Luo, Kun, Huang, Kailiang, Sun, Bing, Zhang, Shengli, Wu, ZhenHua. Tunable conductance and spin filtering in twisted bilayer copper phthalocyanine molecular devices. NANOSCALEADVANCES[J]. 2021, 3(12): 3497-3501, http://dx.doi.org/10.1039/d0na01079k.
[31] Xia, Xinyan, Guo, Shiying, Xu, Lili, Guo, Tingting, Wu, Zhenhua, Zhang, Shengli. Sensing Performance of SO2, SO3 and NO2 Gas Molecules on 2D Pentagonal PdSe2: A First-Principle Study. IEEE ELECTRON DEVICE LETTERS[J]. 2021, 42(4): 573-576, http://dx.doi.org/10.1109/LED.2021.3059667.
[32] Zhou, Mimi, Zhou, Chaobiao, Luo, Kun, Li, Weimin, Liu, Jiangtao, Liu, Ze, Wu, Zhenhua. Ultrawide bandwidth and sensitive electro-optic modulator based on a graphene nanoelectromechanical system with superlubricity. CARBON[J]. 2021, 176: 228-234, http://dx.doi.org/10.1016/j.carbon.2020.12.041.
[33] Lin, Liangzhong, Liu, Yanfei, Yu, Jiahan, Zhu, Jiaji, Zhang, Dong, Wu, Zhenhua. Spin-flip manipulation in HgTe/CdTe heterostructure interface states with Rashba and Dresselhuas spin-orbit interactions. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES[J]. 2021, 125: http://dx.doi.org/10.1016/j.physe.2020.114427.
[34] 刘孟淦, 陆丛研, 杨冠华, Weizhuo Gan, 彭松昂, zhenhua wu, Jiebin Niu, Jiawei Wang, 汪令飞, Mengmeng Li, Di Geng, 卢年端, Wei Cao, Deji Akinwande, Ling Li, Ming Liu. Analog Monolayer MoS2 Transistor with Record-high Intrinsic Gain (> 100 dB) and Ultra-low Saturation Voltage (< 0.1 V) by Source Engineering. 2021 Symposium on VLSI Technologynull. 2021, [35] Huo, Qiang, Liu, Ming, Song, Renjun, Lei, Dengyun, Luo, Qing, Wu, Zhenhua, Wu, Zuheng, Zhao, Xiaojin, Zhang, Feng, Li, Ling. Demonstration of 3D Convolution Kernel Function Based on 8-Layer 3D Vertical Resistive Random Access Memory. IEEE ELECTRON DEVICE LETTERS[J]. 2020, 41(3): 497-500, http://dx.doi.org/10.1109/LED.2020.2970536.
[36] Luo, Kun, Yang, Wen, Pan, Yu, Yin, Huaxiang, Zhao, Chao, Wu, Zhenhua. Ab-Initio Simulations of Monolayer InSe and MoS2 Strain Effect: From Electron Mobility to Photoelectric Effect. JOURNAL OF ELECTRONIC MATERIALS[J]. 2020, 49(1): 559-565, http://dx.doi.org/10.1007/s11664-019-07809-z.
[37] Huang, Weixing, Zhu, Huilong, Jia, Kunpeng, Wu, Zhenhua, Yin, Xiaogen, Huo, Qiang, Zhang, Yongkui. Investigation of device-circuit for negative capacitance vertical nanowire FETs based on SPICE model. SEMICONDUCTOR SCIENCE AND TECHNOLOGY[J]. 2020, 35(8): https://www.webofscience.com/wos/woscc/full-record/WOS:000552686400001.
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[104] Wu, Zhenhua, Chang, Kai, Liu, J T, Li, X J, Chan, K S. The Hartman effect in graphene. JOURNAL OF APPLIED PHYSICS[J]. 2009, 105(4): http://ir.semi.ac.cn/handle/172111/7337.
发表著作
(1) <科学>杂志精选论文, 科学出版社, 2008-05, 第 5 作者

科研活动

   
科研项目
( 1 ) 高迁移率二维料铟硒及其异质结构的物性、量子输运性质调控和器件应用研究, 主持, 国家级, 2018-01--2021-12
( 2 ) 半导体二维原子晶体材料的制备与器件特性, 参与, 国家级, 2016-07--2021-06
( 3 ) 亚10纳米工艺节点CMOS架构材料可行性方案的探索研究, 主持, 市地级, 2016-06--2018-12
( 4 ) 新型二维材料纳米微结构中电荷输运的介观调控, 主持, 市地级, 2016-06--2017-07
( 5 ) 亚10纳米工艺节点CMOS path finding PDK 先导研究, 主持, 部委级, 2016-06--2018-12
( 6 ) 10纳米 FinFET path finding 研究, 主持, 国家级, 2016-06--2020-12
( 7 ) 亚5纳米工艺节点超低功耗高性能半导体器件探索研究, 主持, 部委级, 2019-09--2021-08
( 8 ) 超陡亚阈值摆幅低功耗新原理器件, 主持, 省级, 2018-08--2019-08
( 9 ) 超薄ZrO2栅介质NC-FinFET及其可靠性研究, 参与, 国家级, 2020-01--2023-12
( 10 ) 先进工艺节点器件与单元电路协同优化研究, 主持, 部委级, 2018-12--2021-06
( 11 ) 集成电路核心器件先进仿真方法和TCAD工具研究, 主持, 部委级, 2021-01--2023-12

指导学生

现指导学生

刘建华  博士研究生  080903-微电子学与固体电子学  

甘维卓  博士研究生  080903-微电子学与固体电子学  

李仕信  硕士研究生  080903-微电子学与固体电子学  

徐浩清  硕士研究生  080903-微电子学与固体电子学  

霍嘉丽  博士研究生  080903-微电子学与固体电子学  

徐丽君  博士研究生  080903-微电子学与固体电子学  

占国慧  博士研究生  080903-微电子学与固体电子学  

狄兆海  硕士研究生  085400-电子信息  

时玉坤  硕士研究生  085400-电子信息