研究领域为低维半导体材料与器件，研究方向包括微电子和光电子，涉及的材料体系包括氧化物、硫化物、非晶碳、石墨烯等。具体研究方向为：（1）用于人工智能的忆阻器基神经突触仿生电子器件；（2）用于环境净化和新能源的可见光光催化材料及相关器件；（3）用于照明及显示的新型LED导光板和扩散板。

       研究领域详细介绍网页：https://zhugefei.nimte.ac.cn

080501-材料物理与化学
080502-材料学

功能材料与纳米器件
新能源材料及相关技术

2002-04--2005-03   浙江大学   博士
1999-09--2002-03   西安交通大学   硕士
1995-09--1999-07   西安交通大学   本科

   

（1） 电致阻变材料与阻变存储器研究, 二等奖, 市地级, 2015

（ 1 ） 一种高纯碳化硼粉体的制备方法, 发明, 2009, 第 1 作者, 专利号: ZL 200910153736.1
（ 2 ） 一种电阻型随机存储器的存储单元及其制备方法, 发明, 2010, 第 2 作者, 专利号: ZL 2009 1 0100140.5
（ 3 ） 一种电阻型随机存储器的存储单元及其制备方法, 发明, 2010, 第 2 作者, 专利号: ZL 2009 1 0100141.X
（ 4 ） 一种氮掺杂多孔碳薄膜的制备方法及其产品, 发明, 2013, 第 1 作者, 专利号: 201310445981.6
（ 5 ） 一种电阻型随机存储器的存储单元的制备方法及其产品, 发明, 2014, 第 1 作者, 专利号: 201410204899.9
（ 6 ） 一种电阻型随机存储器的存储单元及其制备方法, 发明, 2013, 第 1 作者, 专利号: 201310446932.4
（ 7 ） 一种生物神经突触仿生电子 器件单元的制备方法及其产品, 发明, 2014, 第 1 作者, 专利号: 201410687913.5
（ 8 ） 一种生物神经突触仿生电子器件及其制备方法, 发明, 2015, 第 1 作者, 专利号: 201510255588.X
（ 9 ） 一种电阻型随机存储器的存储单元及其制备方法, 发明, 2017, 第 1 作者, 专利号: ZL 2013 1 0446932.4

   

[1] Yang, Ruqi, Yin, Lei, Lu, Jianguo, Lu, Bojing, Pi, Xiaodong, Li, Siqin, Fei Zhuge, Lu, Yangdan, Shao, Wenyi, Ye, Zhizhen. Optoelectronic Artificial Synaptic Device Based on Amorphous InAlZnO Films for Learning Simulations. ACS APPLIED MATERIALS & INTERFACES[J]. 2022, 14(41): 46866-46875, http://dx.doi.org/10.1021/acsami.2c14029.
[2] Geng, Xiaoying, Hu, Lingxiang, Fei Zhuge, Wei, Xianhua. Retina-Inspired Two-Terminal Optoelectronic Neuromorphic Devices with Light-Tunable Short-Term Plasticity for Self-Adjusting Sensing. ADVANCED INTELLIGENT SYSTEMS[J]. 2022, 4(6): https://doaj.org/article/afdad6228f05458f8b8c3f6e02210747.
[3] 沈柳枫, 胡令祥, 康逢文, 叶羽敏, 诸葛飞. “光电神经形态器件及其应用”. 物理学报. 2022, 71(14): 80-102, https://d.wanfangdata.com.cn/periodical/wlxb202214005.
[4] Hu, Lingxiang, Yang, Jing, Wang, Jingrui, Cheng, Peihong, Chua, Leon O, Zhuge, Fei. All-Optically Controlled Memristor for Optoelectronic Neuromorphic Computing. ADVANCED FUNCTIONAL MATERIALS[J]. 2021, 31(4): https://www.webofscience.com/wos/woscc/full-record/WOS:000590569500001.
[5] Wang, Jingrui, Xia, Zhuge, Fei, Zhuge. Hybrid oxide brain-inspired neuromorphic devices for hardware implementation of artificial intelligence. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS[J]. 2021, 22(1): 326-344, https://doaj.org/article/167695ce5b914dac9159ee05091cd221.
[6] Wang, Yuchen, Hu, Lingxiang, Wei, Xianhua, Zhuge, Fei. Ultralow operation voltages of a transparent memristor based on bilayer ITO. APPLIEDPHYSICSLETTERS[J]. 2020, 116(22): https://www.webofscience.com/wos/woscc/full-record/WOS:000540740400001.
[7] Xia Zhuge, Wang, Jingrui, Fei Zhuge. Photonic Synapses for Ultrahigh-Speed Neuromorphic Computing. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS[J]. 2019, 13(9): http://dx.doi.org/10.1002/pssr.201900082.
[8] Wang, Jingrui, Zhuge, Fei. Memristive Synapses for Brain-Inspired Computing. ADVANCED MATERIALS TECHNOLOGIESnull. 2019, 4(3): http://dx.doi.org/10.1002/admt.201800544.
[9] Hu, Lingxiang, Fu, Sheng, Chen, Youhu, Cao, Hongtao, Liang, Lingyan, Zhang, Hongliang, Gao, Junhua, Wang, Jingrui, Zhuge, Fei. Ultrasensitive Memristive Synapses Based on Lightly Oxidized Sulfide Films. ADVANCED MATERIALS[J]. 2017, 29(24): http://ir.nimte.ac.cn/handle/174433/13766.
[10] Xu, D, Shangguan, X N, Wang, S M, Cao, H T, Liang, L Y, Zhang, H L, Gao, J H, Long, W M, Wang, J R, Zhuge, F. Coexistence of two types of metal filaments in oxide memristors. AIP ADVANCES[J]. 2017, 7(2): http://ir.nimte.ac.cn/handle/174433/14012.
[11] Pan, Ruobing, Li, Jun, Zhuge, Fei, Zhu, Liqiang, Liang, Lingyan, Zhang, Hongliang, Gao, Junhua, Cao, Hongtao, Fu, Bing, Li, Kang. Synaptic devices based on purely electronic memristors. APPLIED PHYSICS LETTERS[J]. 2016, 108(1): http://www.corc.org.cn/handle/1471x/2235169.
[12] Wang, Jingrui, Pan, Ruobing, Cao, Hongtao, Wang, Yang, Liang, Lingyan, Zhang, Hongliang, Gao, Junhua, Zhuge, Fei. Anomalous rectification in a purely electronic memristor. APPLIED PHYSICS LETTERS[J]. 2016, 109(14): https://www.webofscience.com/wos/woscc/full-record/WOS:000386152800063.
[13] Zhuge, Fei, Li, Jun, Chen, Hao, Wang, Jun, Zhu, Liqiang, Bian, Baoru, Fu, Bing, Wang, Qin, Li, Le, Pan, Ruobing, Liang, Lingyan, Zhang, Hongliang, Cao, Hongtao, Zhang, Hong, Li, Zhicheng, Gao, Junhua, Li, Kang. Single-crystalline metal filament-based resistive switching in a nitrogen-doped carbon film containing conical nanopores. APPLIEDPHYSICSLETTERS[J]. 2015, 106(8): https://www.webofscience.com/wos/woscc/full-record/WOS:000350546600062.
[14] Zhuge, Fei, Li, Kang, Fu, Bing, Zhang, Hongliang, Li, Jun, Chen, Hao, Liang, Lingyan, Gao, Junhua, Cao, Hongtao, Liu, Zhimin, Luo, Hao. Mechanism for resistive switching in chalcogenide-based electrochemical metallization memory cells. AIP ADVANCES[J]. 2015, 5(5): https://doaj.org/article/6f4c54f746564ae885735cc3c1113824.
[15] Chen, Hao, Zhuge, Fei, Fu, Bing, Li, Jun, Wang, Jun, Wang, Weigao, Wang, Qin, Li, Le, Li, Fagen, Zhang, Haolei, Liang, Lingyan, Luo, Hao, Wang, Mei, Gao, Junhua, Cao, Hongtao, Zhang, Hong, Li, Zhicheng. Forming-free resistive switching in a nanoporous nitrogen-doped carbon thin film with ready-made metal nanofilaments. CARBON[J]. 2014, 76: 459-463, http://dx.doi.org/10.1016/j.carbon.2014.04.091.
[16] 诸葛飞. Nonvolatile bistable resistive switching in a new polyimide bearing 9-pheny-9H-carbazole pendant. Journal of Materials Chemistry. 2012, [17] Peng, Shanshan, Zhuge, Fei, Chen, Xinxin, Zhu, Xiaojian, Hu, Benlin, Pan, Liang, Chen, Bin, Li, RunWei. Mechanism for resistive switching in an oxide-based electrochemical metallization memory. APPLIED PHYSICS LETTERS[J]. 2012, 100(7): http://www.irgrid.ac.cn/handle/1471x/755194.
[18] Zhuge, Fei, Peng, Shanshan, He, Congli, Zhu, Xiaojian, Chen, Xinxin, Liu, Yiwei, Li, RunWei. Improvement of resistive switching in Cu/ZnO/Pt sandwiches by weakening the randomicity of the formation/rupture of Cu filaments. NANOTECHNOLOGY[J]. 2011, 22(27): https://www.webofscience.com/wos/woscc/full-record/WOS:000291021200007.
[19] Zhuge, Fei, Hu, Benlin, He, Congli, Zhou, Xufeng, Liu, Zhaoping, Li, RunWei. Mechanism of nonvolatile resistive switching in graphene oxide thin films. CARBON[J]. 2011, 49(12): 3796-3802, http://dx.doi.org/10.1016/j.carbon.2011.04.071.
[20] Zhu, Xiaojian, Zhuge, Fei, Li, Mi, Yin, Kuibo, Liu, Yiwei, Zuo, Zhenghu, Chen, Bin, Li, RunWei. Microstructure dependence of leakage and resistive switching behaviours in Ce-doped BiFeO3 thin films. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2011, 44(41): https://www.webofscience.com/wos/woscc/full-record/WOS:000295460000008.
[21] Chen, Bin, Li, Mi, Liu, Yiwei, Zuo, Zhenghu, Zhuge, Fei, Zhan, QingFeng, Li, RunWei. Effect of top electrodes on photovoltaic properties of polycrystalline BiFeO3 based thin film capacitors. NANOTECHNOLOGY[J]. 2011, 22(19): https://www.webofscience.com/wos/woscc/full-record/WOS:000288750800003.
[22] Yin, Kuibo, Li, Mi, Liu, Yiwei, He, Congli, Zhuge, Fei, Chen, Bin, Lu, Wei, Pan, Xiaoqing, Li, RunWei. Resistance switching in polycrystalline BiFeO3 thin films. APPLIED PHYSICS LETTERS[J]. 2010, 97(4): http://ir.nimte.ac.cn/handle/174433/643.
[23] Zhuge, F, Dai, W, He, C L, Wang, A Y, Liu, Y W, Li, M, Wu, Y H, Cui, P, Li, RunWei. Nonvolatile resistive switching memory based on amorphous carbon. APPLIED PHYSICS LETTERS[J]. 2010, 96(16): http://ir.nimte.ac.cn/handle/174433/303.
[24] Li, Mi, Zhuge, Fei, Zhu, Xiaojian, Yin, Kuibo, Wang, Jinzhi, Liu, Yiwei, He, Congli, Chen, Bin, Li, RunWei. Nonvolatile resistive switching in metal/La-doped BiFeO3/Pt sandwiches. NANOTECHNOLOGY[J]. 2010, 21(42): http://ir.nimte.ac.cn/handle/174433/1544.
[25] Shang, D S, Shi, L, Sun, J R, Shen, B G, Zhuge, F, Li, R W, Zhao, Y G. Improvement of reproducible resistance switching in polycrystalline tungsten oxide films by in situ oxygen annealing. APPLIED PHYSICS LETTERS[J]. 2010, 96(7): http://ir.iphy.ac.cn/handle/311004/39670.
[26] He, C L, Zhuge, F, Zhou, X F, Li, M, Zhou, G C, Liu, Y W, Wang, J Z, Chen, B, Su, W J, Liu, Z P, Wu, Y H, Cui, P, Li, RunWei. Nonvolatile resistive switching in graphene oxide thin films. APPLIED PHYSICS LETTERS[J]. 2009, 95(23): http://ir.nimte.ac.cn/handle/174433/381.

（ 1 ） 石墨烯物理及应用, Physics and Applications of Graphene, InTech, 2011-04, 第 1 作者
（ 2 ） 石墨烯研究新进展, New Progress on Graphene Research, InTech, 2013-03, 第 1 作者

   

（ 1 ） 非晶碳薄膜中可逆巨电致电阻效应的研究, 主持, 国家级, 2010-01--2013-12
（ 2 ） 碳基薄膜阻变效应的研究, 主持, 国家级, 2012-01--2014-12
（ 3 ） 单根氧化物半导体纳米线中巨电致电阻效应的机理研究, 主持, 国家级, 2013-01--2016-12
（ 4 ） 基于非晶碳纳米忆阻器的神经突触仿生器件研究, 主持, 国家级, 2015-01--2018-12
（ 5 ） 基于氧化物纳米忆阻器的神经突触仿生器件研究, 主持, 省级, 2015-01--2018-12
（ 6 ） 用于构建人工神经网络的纯电子型忆阻器突触阵列研究, 主持, 国家级, 2017-01--2020-12

已指导学生

彭姗姗  02  19575  

杨智唤  02  19216  

王妹  02  19216  

现指导学生

付圣   01  19216  

俞家欢  02  19216