080903-微电子学与固体电子学

薄膜生长，光电子器件

1998-07--2001-09 浙江大学 博士

   

2004-06--今 中科院上海技术物理研究所 副研究员
2001-07--2004-05 中科院上海技术物理研究所 助理研究员
1995-09--1998-07 兰州理工大学 讲师

   

[1] 林虹宇, 胡淑红, 周子骥, 郝加明, 谢浩, 段永飞, 戴宁. InAs基室温宽波段红外光电探测器. CN: CN214797434U, 2021-11-19.

[2] 林虹宇, 胡淑红, 周子骥, 郝加明, 谢浩, 段永飞, 戴宁. 一种InAs基室温宽波段红外光电探测器. CN: CN112786732A, 2021-05-11.

[3] 胡淑红, 王洋, 吕英飞, 孙艳, 戴宁. 带势垒层结构的砷化铟热光伏电池的液相外延制备方法. CN: CN105047751A, 2015-11-11.

[4] 王洋, 胡淑红, 吕英飞, 戴宁. 一种低温生长变组分镓砷锑薄膜的液相外延方法. CN: CN105002554A, 2015-10-28.

[5] 王洋, 胡淑红, 吕英飞, 戴宁. 一种低温生长富砷的镓砷锑薄膜的液相外延方法. CN: CN105006428A, 2015-10-28.

[6] 胡淑红, 王洋, 吕英飞, 孙艳, 戴宁. 带势垒层结构的砷化铟热光伏电池. CN: CN204680680U, 2015-09-30.

[7] 胡淑红, 王洋, 吕英飞, 孙艳, 戴宁. 一种带势垒层结构的砷化铟热光伏电池. CN: CN104868008A, 2015-08-26.

[8] 胡淑红, 吕英飞, 王洋, 戴宁. 一种应用于液相外延生长的组合式纯化母液的方法. CN: CN104562186A, 2015-04-29.

[9] 王洋, 胡淑红, 吕英飞, 戴宁. 具有纯化母液功能的双衬底槽液相外延石墨舟. CN: CN204224738U, 2015-03-25.

[10] 王洋, 胡淑红, 吕英飞, 戴宁. 一种具有纯化母液功能的双衬底槽液相外延石墨舟. CN: CN104328487A, 2015-02-04.

[11] 吕英飞, 胡淑红, 王洋, 孙常鸿, 邱锋, 俞国林, 戴宁. 基于液相外延技术制备高氮组分的铟砷氮薄膜的方法. CN: CN104032375A, 2014-09-10.

[12] 胡淑红, 邱锋, 吕英飞, 王洋, 戴宁. 多层嵌埋结构GaSb量子点材料的液相外延制备方法. CN: CN103681260A, 2014-03-26.

[13] 邱锋, 胡淑红, 孙常鸿, 王奇伟, 吕英飞, 郭建华, 邓惠勇, 戴宁. 一种用于超薄外延层生长的液相外延石墨舟. CN: CN203128690U, 2013-08-14.

[14] 邱锋, 胡淑红, 孙常鸿, 王奇伟, 吕英飞, 郭建华, 邓惠勇, 戴宁. 一种用于超薄外延层生长的液相外延石墨舟及其生长方法. CN: CN103088410A, 2013-05-08.

[15] 邓惠勇, 郭建华, 邱锋, 吕英飞, 胡淑红, 胡古今, 戴宁. 一种PN结阵列受光的太阳电池. CN: CN202888183U, 2013-04-17.

[16] 邓惠勇, 郭建华, 王奇伟, 邱锋, 孙常鸿, 吕英飞, 孙艳, 胡淑红, 胡古今, 陈鑫, 俞国林, 戴宁. 一种制备InAsSb量子点的方法. 中国: CN102386073A, 2012.03.21.

[17] 邓惠勇, 郭建华, 邱锋, 吕英飞, 胡淑红, 胡古今, 戴宁. 一种pn结阵列受光结构的太阳电池. CN: CN102820287A, 2012-12-12.

[18] 邱锋, 吕英飞, 胡淑红, 郭建华, 邓惠勇, 戴宁. 一种用于液相外延用富镓的砷化镓熔体凝固的方法. CN: CN102732951A, 2012-10-17.

[19] 邱锋, 胡淑红, 孙常鸿, 王奇伟, 吕英飞, 郭建华, 邓惠勇, 戴宁. 一种用于超薄外延层生长的液相外延石墨舟及其生长方法. CN: CN102732952A, 2012-10-17.

[20] 邱锋, 胡淑红, 王奇伟, 孙常鸿, 吕英飞, 郭建华, 邓惠勇, 戴宁. 一种全自动控制的液相外延设备及控制方法. CN: CN102677162A, 2012-09-19.

[21] 孙常鸿, 胡淑红, 王奇伟, 邓惠勇, 邱锋, 吕英飞, 郭建华, 戴宁. 一种可连续生长多层膜的防止母液残留的液相外延石墨舟. CN: CN102383190A, 2012-03-21.

[22] 胡淑红, 戴宁. 锑化镓量子点的液相外延制备方法. CN: CN102347221A, 2012-02-08.

[23] 邓惠勇, 王奇伟, 吴杰, 胡淑红, 郭少令, 陈鑫, 戴宁. 一种砷化铟红外光伏电池. CN: CN201749863U, 2011-02-16.

[24] 邓惠勇, 王奇伟, 吴杰, 胡淑红, 郭少令, 陈鑫, 戴宁. 一种InAs红外光伏电池及液相外延的制备方法. CN: CN101924147A, 2010-12-22.

[25] 王 仍, 方维政, 赵 培, 张 雷, 袁诗鑫, 张惠尔, 胡淑红, 戴宁. 锌镉碲单晶的生长和退火方法以及退火专用坩埚. CN: CN101275281A, 2008-10-01.

[26] 胡淑红, 戴宁. 铟砷锑厚膜材料的制备方法. CN: CN101275280A, 2008-10-01.

[27] 胡淑红, 戴宁, 孟祥建, 胡古今, 孙艳, 王根水. 锆钛酸铅厚膜材料的制备方法. CN: CN1210223C, 2005-07-13.

   

[1] Zhou, Ziji, Lin, Hongyu, Pan, Xiaohang, Tan, Chong, Zhou, Dongjie, Wen, Zhengji, Sun, Yan, Hu, Shuhong, Dai, Ning, Chu, Junhao, Hao, Jiaming. Surface plasmon enhanced InAs-based mid-wavelength infrared photodetector. APPLIED PHYSICS LETTERS[J]. 2023, 122(9): http://dx.doi.org/10.1063/5.0140370.
[2] Xie, Hao, Lin, Hongyu, Zhou, Ziji, Wen, Zhengji, Sun, Yan, Hao, Jiaming, Hu, Shuhong, Dai, Ning. Room-temperature InAsSb pBin detectors for mid-infrared application. INFRARED PHYSICS & TECHNOLOGY[J]. 2023, 128: http://dx.doi.org/10.1016/j.infrared.2022.104475.
[3] 陆宏波, 李欣益, 李戈, 张玮, 胡淑红, 戴宁, 杨瑰婷. InGaAsP/InGaAs双结太阳电池的开路电压损耗抑制. 红外与毫米波学报[J]. 2021, 40(1): 7-11, http://lib.cqvip.com/Qikan/Article/Detail?id=7103993087.
[4] 陆宏波, 李欣益, 李戈, 张玮, 胡淑红, 戴宁, 杨瑰婷. InGaAsP/InGaAs双结太阳电池的开路电压损耗抑制（英文）. 红外与毫米波学报. 2021, 7-11, https://kns.cnki.net/KCMS/detail/detail.aspx?dbcode=CJFQ&dbname=CJFDLAST2021&filename=HWYH202101003&v=MTk5MzhSOGVYMUx1eFlTN0RoMVQzcVRyV00xRnJDVVI3dWZZZWRuRkN2bFVML1BMVHJTWnJHNEhORE1ybzlGWjQ=.
[5] 陆宏波, 李戈, 李欣益, 张玮, 胡淑红, 戴宁. 晶格小失配InGaAsP材料特性及太阳电池应用. 发光学报[J]. 2020, 41(4): 351-356, http://lib.cqvip.com/Qikan/Article/Detail?id=7101477010.
[6] Xie, Hao, Lin, Hongyu, Xu, Qianqian, Lu, Hongbo, Sun, Yan, Hu, Shuhong, Dai, Ning. Investigation of surface morphology of InAs1-x-ySbxPy epilayers grown by liquid phase epitaxy. JOURNAL OF CRYSTAL GROWTH[J]. 2020, 534: http://dx.doi.org/10.1016/j.jcrysgro.2019.125464.
[7] Zhang, Kaixuan, Du, Yongping, Qi, Zeming, Cheng, Bin, Fan, Xiaodong, Wei, Laiming, Li, Lin, Wang, Dongli, Yu, Guolin, Hu, Shuhong, Sun, Changhong, Huang, Zhiming, Chu, Junhao, Wan, Xiangang, Zeng, Changgan. Room-Temperature Anisotropic Plasma Mirror and Polarization-Controlled Optical Switch Based on Type-II Weyl Semimetal WP2. PHYSICAL REVIEW APPLIED[J]. 2020, 13(1): https://www.webofscience.com/wos/woscc/full-record/WOS:000510177000002.
[8] Lu, Hongbo, Li, Xinyi, Zhang, Wei, Li, Ge, Hu, Shuhong, Dai, Ning. MOVPE grown 1.0 eV InGaAsP solar cells with bandgap-voltage offset near to ideal radiative recombination limit. SOLAR ENERGY MATERIALS AND SOLAR CELLS[J]. 2019, 196: 65-69, http://dx.doi.org/10.1016/j.solmat.2019.03.032.
[9] 林虹宇, 谢浩, 王洋, 陆宏波, 孙艳, 胡淑红, 陈鑫, 戴宁. 基于液相外延的InAs基红外探测器InAsSbP阻挡层的仿真. 光学学报[J]. 2019, 39(5): 42-48, http://lib.cqvip.com/Qikan/Article/Detail?id=7002280331.
[10] Xie, Hao, Lin, Hongyu, Wang, Yang, Lu, Hongbo, Sun, Yan, Hao, Jiaming, Hu, Shuhong, Dai, Ning. Liquid phase epitaxy growth and photoluminescence of InAs(1-x-y)Sb(x)P(y)epilayer. MATERIALS RESEARCH EXPRESS[J]. 2019, 6(8): https://www.webofscience.com/wos/woscc/full-record/WOS:000470233500001.
[11] Wang, Yang, Hu, Shuhong, Xie, Hao, Lin, Hongyu, Lu, Hongbo, Wang, Chao, Sun, Yan, Dai, Ning. Photoluminescence investigation of type-II GaSb/GaAs quantum dots grown by liquid phase epitaxy. INFRARED PHYSICS & TECHNOLOGY[J]. 2018, 91: 68-71, http://dx.doi.org/10.1016/j.infrared.2018.03.023.
[12] Wang, Yang, Hu, Shuhong, Xie, Hao, Sun, Yan, Wang, Chao, Dai, Ning. Phonon replicas of type-II GaSb/GaAs quantum dot structure grown by liquid phase epitaxy. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING[J]. 2018, 124(10): http://dx.doi.org/10.1007/s00339-018-2105-4.
[13] 谢浩, 胡淑红, 王洋, 黄田田, 潘晓航, 孙艳, 戴宁. 两种液相外延模式生长GaAs0.9Sb0.1薄膜的性能. 激光与光电子学进展[J]. 2017, 54(11): 326-330, http://lib.cqvip.com/Qikan/Article/Detail?id=673750243.
[14] Wang, Yang, Hu, Shuhong, Zhou, Wei, Sun, Yan, Zhang, Bin, Wang, Chao, Dai, Ning. LPE growth and optical characteristics of GaAs1-xSbx epilayer. JOURNAL OF CRYSTAL GROWTH[J]. 2017, 463: 123-127, http://dx.doi.org/10.1016/j.jcrysgro.2017.01.040.
[15] 胡淑红. 液相外延制备的InAs0.94Sb0.06薄膜的光学性质. 红外与毫米波报. 2016, [16] Qiu, Feng, Qiu, Weiyang, Li, Yulian, Wang, Xingjun, Zhang, Yun, Zhou, Xiaohao, Lv, Yingfei, Sun, Yan, Deng, Huiyong, Hu, Shuhong, Dai, Ning, Wang, Chong, Yang, Yu, Zhuang, Qiandong, Hayne, Manus, Krier, A. An investigation of exciton behavior in type-II self-assembled GaSb/GaAs quantum dots. NANOTECHNOLOGY[J]. 2016, 27(6): http://dx.doi.org/10.1088/0957-4484/27/6/065602.
[17] 胡淑红. An investigation of exaction behavior in type-II self-assembled GASb/GaAs quantum dots. Nanotechnology. 2016, [18] Lv YingFei, Zhou Wei, Wang Yang, Yu GuoLin, Hu ShuHong, Dai Ning. Investigations on optical properties of LPE-grown InAs0.94 Sb-0.06 film. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2016, 35(1): 42-+, https://www.webofscience.com/wos/woscc/full-record/WOS:000371376400008.
[19] Lv YingFei, Zhou Wei, Wang Yang, Yu GuoLin, Hu ShuHong, Dai Ning. Investigations on optical properties of LPE-grown InAs0.94 Sb-0.06 film. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2016, 35(1): 42-+, https://www.webofscience.com/wos/woscc/full-record/WOS:000371376400008.
[20] 胡淑红. High-purity InAsSb epilayer grown by LPE technique. Journal of Crystal Growth. 2015, [21] Lv, Y F, Hu, S H, Zhou, W, Xu, Y G, Wang, Y, Wang, R, Yu, G L, Dai, N. Band to band optical absorption in LPE-growth InAs0.94Sb0.06 film. INFRARED PHYSICS & TECHNOLOGY[J]. 2015, 71: 175-178, https://www.webofscience.com/wos/woscc/full-record/WOS:000360594900021.
[22] Zhang, Kenan, Hu, Shuhong, Zhang, Yun, Zhang, Tianning, Zhou, Xiaohao, Sun, Yan, Li, TianXin, Fan, Hong Jin, Shen, Guozhen, Chen, Xin, Dai, Ning. Self-Induced Uniaxial Strain in MoS2 Mono layers with Local van der Waals-Stacked Inter layer Interactions. ACS NANO[J]. 2015, 9(3): 2704-2710, http://ir.semi.ac.cn/handle/172111/26874.
[23] Lv, Y F, Hu, S H, Xu, Y G, Zhang, Y, Wang, Y, Wang, R, Yu, G L, Dai, N. The complete absorption spectra of InAs0.87Sb0.13 films grown by liquid phase epitaxy. APPLIED SURFACE SCIENCE[J]. 2015, 347: 286-290, http://dx.doi.org/10.1016/j.apsusc.2015.04.070.
[24] Lv, Y F, Hu, S H, Yang, X Y, Wang, Y, Sun, C H, Qiu, F, Cong, R, Dong, W J, Zhang, Y, Yu, G L, Dai, N. LPE growth and characterization of InAs1-xNx films. JOURNALOFCRYSTALGROWTH[J]. 2014, 398: 1-4, http://dx.doi.org/10.1016/j.jcrysgro.2014.04.005.
[25] 胡淑红, 邱锋, 吕英飞, 孙常鸿, 王奇伟, 郭建华, 邓惠勇, 戴宁, ZHUANGQianDong, YINMin, KRIERAnthony. GaSb量子点液相外延生长研究. 红外毫米波学报[J]. 2013, 32(3): http://202.127.1.142/handle/181331/7694.
[26] 胡淑红, 邱锋, 吕英飞, 孙常鸿, 王奇伟, 郭建华, 邓惠勇, 戴宁, Zhuang Qiandong, Yin Min, Krier Anthony. GaSb量子点液相外延生长. 红外与毫米波学报[J]. 2013, 32(3): 220-224, http://lib.cqvip.com/Qikan/Article/Detail?id=46252894.
[27] Hu ShuHong, Qiu Feng, Lv YingFei, Sun ChangHong, Wang QiWei, Guo JianHua, Deng HuiYong, Dai Ning, Zhuang QianDong, Yin Min, Krier Anthony. GaSb Quantum Dots growth by Liquid Phase Epitaxy. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2013, 32(3): 220-224, https://www.webofscience.com/wos/woscc/full-record/WOS:000321722400006.
[28] Li, Dong, Li, Gaofang, Kong, Hui, Shu, Shiwei, Ma, Guohong, Ge, Jin, Hu, Shuhong, Dai, Ning. The Extraordinary Transmission Spectrum in Terahertz Regime: Combination of Shape Resonances and Rayleigh anomalies. JOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES[J]. 2012, 33(2): 212-217, http://202.127.1.142/handle/181331/7153.
[29] Li, Gaofang, Jin, Zuanming, Xue, Xin, Lin, Xian, Ma, Guohong, Hu, Shuhong, Dai, Ning. Terahertz coherent control of surface plasmon polariton propagation in subwavelength metallic hole arrays. APPLIED PHYSICS LETTERS[J]. 2012, 100(19): http://www.irgrid.ac.cn/handle/1471x/596196.
[30] 邱锋, 胡淑红, 孙常鸿, 吕英飞, 王奇伟, 孙艳, 邓惠勇, 戴宁. 稀氮 Ⅲ-Ⅴ族InAsN和InSbN中长波红外光电材料与器件. 红外[J]. 2012, 33(2): 1-7, http://lib.cqvip.com/Qikan/Article/Detail?id=40866710.
[31] 孔辉, 李高芳, 马国宏, 胡淑红, 戴宁. 亚波长金属块阵列中太赫兹波的传输特性研究. 光子学报[J]. 2012, 888-892, http://lib.cqvip.com/Qikan/Article/Detail?id=1001842647.
[32] 胡淑红. Growth and Raman spectra of GaSb quantum dots in GaAs matrices by liquid phase epitaxy. Chinese Optics Letters,. 2012, [33] 胡淑红. InAsxSb1-x single crystalline films with cut-off wavelength of 7-8 µm grown on (100) InSb substrate by liquid phase epitaxy. Journal of Alloy and Compounds. 2012, [34] 胡淑红. LPE growth and characterization of mid-infrared InAsSb film on InAs substrate. J.Cryst. Growth. 2011, [35] 王仍, 林杏潮, 张莉萍, 张可锋, 焦翠灵, 陆液, 邵秀华, 李向阳, 葛进, 胡淑红, 戴宁. Hg_（1-x）Cd_xTe晶体生长及太赫兹性能研究. 红外与毫米波学报[J]. 2011, 30(5): 401-405, http://lib.cqvip.com/Qikan/Article/Detail?id=39593021.
[36] Wang Reng, Lin XingCao, Zhang LiPing, Zhang KeFeng, Jiao CuiLing, Lu Ye, Shao XiuHua, Li XiangYang, Ge Jin, Hu ShuHong, Dai Ning. Growth and terahertz characterization of Hg1-x Cd-x Te crystal. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2011, 30(5): 401-U132, https://www.webofscience.com/wos/woscc/full-record/WOS:000296436700004.
[37] Li FangFang, Li Dong, Shu ShiWei, Ma GuoHong, Ge Jin, Hu ShuHong, Dai Ning. POLARIZED TERAHERTZ WAVE TRANSMISSION THROUGH WIRE GRATINGS. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2010, 29(6): 452-456, https://www.webofscience.com/wos/woscc/full-record/WOS:000285662200013.
[38] 孙常鸿, 胡淑红, 王奇伟, 吴杰, 何家玉, 戴宁. 非致冷InAsSb中长波红外探测器研究评述. 中国电子科学研究院学报[J]. 2010, 11-18, http://lib.cqvip.com/Qikan/Article/Detail?id=32951300.
[39] 胡淑红. Dielectric functions and the interband critical points of InAsSb films grown by a modified LPE techniques. Physica B. 2010, [40] Deng HuiYong, Wang QiWei, Tao JunChao, Wu Jie, Hu ShuHong, Chen Xin, Dai Ning. Electrical Property of Infrared-Sensitive InAs Solar Cells. CHINESE PHYSICS LETTERS[J]. 2010, 27(11): 95-98, http://lib.cqvip.com/Qikan/Article/Detail?id=35574324.
[41] Ge Jin, Wang Reng, Hu Shuhong, Dai Ning, Li Dong, Ma Hong, Ma Guohong. Distinguishment of the different parts of objects by terahertz imaging. 5th international symposium on advanced optical manufacturing and testing technologies - optoelectronic materials and devices for detector, imager, display, and energy conversion technologynull. 2010, http://www.corc.org.cn/handle/1471x/2313990.
[42] Li FangFang, Li Dong, Shu ShiWei, Ma GuoHong, Ge Jin, Hu ShuHong, Dai Ning. POLARIZED TERAHERTZ WAVE TRANSMISSION THROUGH WIRE GRATINGS. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2010, 29(6): 452-456, https://www.webofscience.com/wos/woscc/full-record/WOS:000285662200013.
[43] 邓惠勇, 王奇伟, 陶俊超, 吴杰, 胡淑红, 陈鑫, 戴宁. Electrical Property of Infrared-Sensitive InAs Solar Cells. 中国物理快报：英文版[J]. 2010, 27(11): 95-98, http://lib.cqvip.com/Qikan/Article/Detail?id=35574324.
[44] 孙常鸿, 胡淑红, 王奇伟. High quality mid-infrared InAs film grown on (100) GaSb substrate by LPE using a ternary melt. 第四届国际光电子探测与成像技术学术交流会 ISPDI2011，null. 2010, http://202.127.1.142/handle/181331/5890.
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（1） InAs基半导体材料的热光伏效应及其在低温辐射体热光伏发电中的应用基础研究，主持，国家级，2013-01--2016-12
（2） 面向火车红外轴温探测器应用的inAsSb红外探测器材料的生长研究，主持，省级，2010-01--2012-01
（3） 硅基长波红外材料InAsSb单晶的生长及其性能研究，主持，国家级，2007-01--2008-01
（4） InAsSb单晶的生长及其性能研究，主持，省级，2006-06--2008-06

已指导学生

孙常鸿  博士研究生  080903-微电子学与固体电子学  

邱锋  博士研究生  080903-微电子学与固体电子学  

吕英飞  博士研究生  080903-微电子学与固体电子学