Professor Liu zhiqiang
He has won the first prize of National Science and Technology Progress Award, the second prize of National Technology Invention Award, Beijing Science and Technology Award, He was responsible for the major and key programs of National High-Tech Research and Development Plan.
research spans a broad spectrum in the areas of III-V thin film, nanowire growth for optoelectronic and other applications. Current research philosophy is focused on innovations in materials that bring new functionality to devices, including wide bandgap materials growth, material characterization, the first principle calculation and devices fabrication. he has made pioneering contributions and received about $5million research funding. The research has resulted in more than 150 papers and 30 patents. Significant research contributions include:
• pioneering contributions in nitride van der walls epitaxy
• Detailed and systemically study of carrier combination process, especially efficiency droop mechanism. I proposed a series of novel quantum structure to improve the efficiency of LEDs and addressed the issue of efficiency Droop, which is hot topic in both academic and industrial field. Based on this work, we reported the world record Droop rate for high power LEDs. The efficient droop rate was below 13% at 100A/cm2.
• First proposed a new highly p-doping mechanism, namely “impurity resonate state p doping”. Prof. Amano commented: it is a new p-doping mechanism, and could be used in high Al deep-UV LEDs. I also reported the world best p-type conductivity of GaN.
• First MOCVD growth of Ga(Gd)N materials, the first room temperature device showing spin injection using Ga(Gd)N based materials and devices.
• First explanation of the mechanism of magnetic prosperity in n-type Ga(Gd)N materials
• First successfully developed the vertical structure LEDs in china, applied 12 patents, reported three world record nitrides LEDs results and won the second prize national Science and Technology Award.
• Pioneer works on van der waals nitride growth on graphene layers, and reported graphene blue LEDs and AlN material.
• Reported 209 nm deep UV nanowire LEDs, it is one of the world shortest wavelength LEDs
• Recently, my research expand to nurturing the application of new Techs.
Ph.D. supervisor
Email: lzq@semi.ac.cn
Research Areas
wide-band gap material and device
nitrides materials growth
nitrides light emitting device
Education
• Institute of Semiconductors, Chinese Academy of Sciences (IOS, CAS): Ph.D. Nitride material and device 2004-2007
• Nanjing University, China: Postdoc. Nitride material and device 2009-2010
Experience
• University of North Carolina at Charlotte (UNCC), USA : visiting professor, nitrides growth, and material DFT calculation (2011-2012)
Work Experience
• Institute of Semiconductors, Chinese Academy of Sciences (IOS, CAS) (2007-2010)
Director of fabrication department:
Nitride LEDs processing, Flip-Chip and vertical LEDs fabrication.
• Nanjing University, China
Nitride material and device (2009-2010)
• University of North Carolina at Charlotte (UNCC), USA
visiting professor:
nitrides growth, and material DFT calculation (2011-2012)
• Institute of Semiconductors, Chinese Academy of Sciences (IOS, CAS) (2012-till now)
Director of fabrication department, lead scientist of National High-tech R&D Program:
Thin film nitrides growth, nanowire growth, High power LEDs and material DFT calculation
• Norwegian University of Science and Technology (NTNU), Norway (Mar to Jul, 2018)
visiting professor
nitrides growth (2018)
Publications
（2） Theoretical Analysis and Experimental Realization of Highly Effective Acceptor Ionization in GaN via Mg Co-doped with 4d-Element (In), ES Materials and Manufacturing, 2019, 第 1 作者
（3） Enhancement of Heat Dissipation in Ultraviolet Light-Emitting Diodes by a Vertically Oriented Graphene Nanowall Buffer Layer, Adv. Mater, 2019, 通讯作者
（4） Key Factors to Address the Issue of Global Energy and Environment Crisis, ES Materials and Manufacturing, 2019, 第 1 作者
（5） High Brightness Blue Light-Emitting Diodes Enabled by Directly Grown Graphene Buffer Layer, Adv. Mater, 2018, 第 5 作者
（6） Ultrafast Growth of Horizontal GaN Nanowires by HVPE through Flipping the Substrate, Nanoscale, 2018, 通讯作者
（7） Crystallographic orientation control and optical properties of GaN nanowires, RSC Advances, 2018, 通讯作者
（8） Generated carrier dynamics in V-pit enhanced InGaN/GaN light emitting diode, ACS Photonics, 2018, 第 7 作者
（9） Influence of lateral growth on the optical properties of GaN nanowires grown by hydride vapor phase epitaxy, Journal of Applied Physics, 2018, 通讯作者
（10） Direct growth of AlGaN nanorod LEDs on graphene covered Si, Materials, 2018, 通讯作者
（11） Direct van der Waals epitaxy of crack-free AlN thin film on epitaxial WS2, Materials, 2018, 通讯作者
（12） A Wirelessly Controllable Optoelectronic Device for Optogenetics, IEEE Photonics Technology Letters, 2018, 通讯作者
（13） In Operando Micro-Raman Three-Dimensional Thermometry with Diffraction-Limit Spatial Resolution for GaN-based Light-Emitting Diodes, PHYSICAL REVIEW APPLIED, 2018, 第 3 作者
（14） Impurity resonant state p-doping layer for high-efficiency nitride-based light-emitting diodes, Semicond. Sci. Technol., 2018, 第 1 作者
（15） Fast Growth of Strain-Free AlN on Graphene-Buffered Sapphire, J. Am. Chem. Soc., 2018, 其他（合作组作者）
（16） Nanostructure Nitride Light Emitting Diodes via Talbot Effect using Improved Colloidal Photolithography, Nanoscale, 2017, 通讯作者
（17） Selective-area growth of periodic nanopyramid light-emitting diode arrays on GaN/sapphire templates patterned by multiple-exposure colloidal lithography, Nanotechnology, 2017, 第 6 作者
（18） Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides, Sci Rep., 2016, 第 1 作者
（19） Co-doping of magnesium with indium in nitrides: first principle calculation and experiment., RSC Advances, 2016, 第 1 作者
（20） Investigation of Isoelectronic Doping in p-GaN Based on The Thermal Quenching of UVL Band, IEEE Photonics Journal, 2016, 通讯作者
（21） Investigation of Isoelectronic Doping in p-GaN Based on The Thermal Quenching of UVL Band, IEEE Photonics Journal, 2016, 通讯作者
（22） Molecular beam epitaxial growth and characterization of Al(Ga)N nanowire deep ultraviolet light emitting diodes and lasers, Journal of Physics, 2016, 通讯作者
（23） Supplementary Information, Data, 2016, 第 1 作者
（24） Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides, Scientific Reports, 2016, 第 1 作者
（25） Electroless Silver Plating Reflectors to Boost the Performance of Vertical Light-Emitting Diodes, IEEE Photonics Journal, 2016, 第 6 作者
（26） Carrier leakage effect on efficiency droop in InGaN/GaN light-emitting diodes, Modern Physics Letters, 2016, 通讯作者
（27） Analysis of symmetry breaking configurations in metal nanocavities: Identification of resonances for generating high-order magnetic modes and multiple tunable magnetic- electric Fano resonances, Journal of Applied Physics, 2016, 通讯作者
（28） Interface and photoluminescence characteristics of graphene-(GaN/InGaN)n multiple quantum wells hybrid structure, Journal of Applied Physics, 2016, 通讯作者
（29） Analysis of symmetry breaking configurations in metal nanocavities: Identification of resonances for generating high-order magnetic modes and multiple tunable magnetic- electric Fano resonances, JAP, 2016, 通讯作者
（30） Overshoot effects of electron on efficiency droop in InGaN/GaN MQW light-emitting diodes, AIP Advances, 2016, 通讯作者
（31） Enhancing the performance of blue GaN-based light emitting diodes with carrier concentration adjusting layer, AIP Advances, 2016, 第 2 作者
（32） Enhancing the performance of blue GaN-based light emitting diodes with carrier concentration adjusting layer, AIP Advances, 2016, 第 2 作者
（33） Overshoot effects of electron on efficiency droop in InGaN/GaN MQW light-emitting diodes, AIP Advances, 2016, 通讯作者
（34） High-Performance Nitride Vertical Light-Emitting Diodes Based on Cu Electroplating Technical Route, IEEE Transactions on Electron Devices, 2016, 通讯作者
（35） Enhancing the performance of blue GaN-based light emitting diodes with carrier concentration adjusting layer, AIP Advances, 2016, 通讯作者
（36） The structural properties of InGaN alloys and the interdependence on the thermoelectric behavior, AIP Advances, 2016, 第 4 作者
（37） High-Performance Nitride Vertical Light-Emitting Diodes Based on Cu Electroplating Technical Route, IEEE Transactions on Electron Devices, 2016, 第 3 作者
（38） The structural properties of InGaN alloys and the interdependence on the thermoelectric behavior, AIP Advances, 2016, 第 4 作者
（39） Broadband light-absorption InGaN photoanode assisted by imprint patterning and ZnO nanowire growth for energy conversion, Nanotechnology, 2016, 通讯作者
（40） Hybrid Tunnel Junction-Graphene Transparent Conductive Electrodes for Nitride Lateral Light Emitting Diodes., ACS Appl Mater Interfaces, 2015, 通讯作者
（41） Enhancing the performance of blue GaN-based light emitting diodes with double electron blocking layers, AIP Advances, 2015, 通讯作者
（42） Excitonic localization in AlN-rich AlxGa1− xN/AlyGa1− yN multi-quantum-well grain boundaries., Applied Physics Letters, 2014, 第 3 作者
（43） Enhanced performance of InGaN-based light emitting diodes through a special etch and regrown process in n-GaN layer, Optics express., 2014, 第 4 作者
（44） , Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells., J. Appl. Phys, 2014, 通讯作者
（45） Performance enhancement of blue light-emitting diodes by adjusting the p-type doped last barrier, Appl. Phys. A , 2014, 通讯作者
（46） Investigation of the wet-etching mechanism of Ga-polar AlGaN/GaN micro-pillars., Journal of Crystal Growth, 2014, 通讯作者
（47） Excitonic localization in AlN-rich AlxGa1xN/AlyGa1yN multi-quantum-well grain, Appl. Phys. Lett, 2014, 第 3 作者
（48） Design of Shallow Acceptors in GaN through Zinc–Magnium Codoping:, Applied Physics Express, 2013, 第 1 作者
（49） Enhancing the performance of green GaN-based light-emitting diodes with graded superlattice AlGaN/GaN inserting layer, Applied Physics Letts , 2013, 通讯作者
（50） Pyramid Array InGaN/GaN core-Shell Light Emitting Diodes with Homogeneous Multilayer Graphene Electrodes, Applied Physics Express , 2013, 通讯作者
（51） The fabrication of GaN-based nanorod light-emitting diodes with multilayer graphene transparent electrodes, J. Appl. Phys, 2013, 通讯作者
（52） Ferromagnetism and its stability in n-type Gd-doped GaN: First-principles, Applied Physics Letts, 2012, 第 1 作者
（53） p-InGaN/AlGaN Electron Blocking Layer for InGaN/GaN Blue Light-Emitting Diodes , Applied Physics Letts , 2012, 第 1 作者
（54） Efficiency droop in InGaN/GaN multiple-quantum-well blue light-emitting, Applied Physics Letts, 2011, 第 1 作者