070205-凝聚态物理

低维纳米材料的第一性原理模拟
宽禁带半导体的理论模拟

2013-09--2015-01   Rice University   联合培养博士
2010-09--2015-06   吉林大学   博士

   

2015-10~2018-02,King Abdullah University of Science and Technology, 博士后

   

[1] Chen, Yang, Zang, Hang, Ben, Jianwei, Zhang, Shanli, Jiang, Ke, Shi, Zhiming, Jia, Yuping, Liu, Mingrui, Sun, Xiaojuan, Li, Dabing. AlGaN UV Detector with Largely Enhanced Heat Dissipation on Mo Substrate Enabled by van der Waals Epitaxy. CRYSTAL GROWTH & DESIGN[J]. 2022, 23: 1162-1171, [2] Zhenyu Li, Jiefei Li, Zexuan Zheng, Kunhong Jiang, Tianrun Zheng, Dongmin Wang, Hang Wei, Zhiming Shi, Xiaotian Li, Haibin Chu. Roles of hydroxyl and oxygen vacancy of CeO_(2)·xH_(2)O in Pd-catalyzed ethanol electro-oxidation. 中国科学:化学英文版[J]. 2022, 65(5): 877-884, http://lib.cqvip.com/Qikan/Article/Detail?id=7107337952.
[3] Chen, Yang, Zang, Hang, Zhang, Shanli, Shi, Zhiming, Ben, Jianwei, Jiang, Ke, Jia, Yuping, Liu, Mingrui, Li, Dabing, Sun, Xiaojuan. Van der Waals Epitaxy of c-Oriented Wurtzite AlGaN on Polycrystalline Mo Substrates for Enhanced Heat Dissipation. ACS APPLIED MATERIALS & INTERFACES[J]. 2022, 14(33): 37947-37957, http://dx.doi.org/10.1021/acsami.2c10039.
[4] Qi, Zhanbin, Shi, Zhiming, Zang, Hang, Ma, Xiaobao, Yang, Yuxin, Jia, Yuping, Jiang, Ke, Sun, Xiaojuan, Li, Dabing. Morphology and carrier mobility of high-B-content BxAl1-xN ternary alloys from an ab initio global search. NANOSCALE[J]. 2022, 14(31): 11335-11342, [5] Tao Huang, Zhicheng Zhu, Chen Zhao, Wenchi Kong, Xuhang Chen, Ruiyan Li, Zhi Yu, Zhiming Shi, Dabing Li, Bai Yang, Weili Yu. Enhancing two-dimensional perovskite photodetector performance through balancing carrier density and directional transport. Journal of Materials Chemistry A[J]. 2022, 10: 21044-21052, [6] Zhao, XinGang, Shi, Zhiming, Wang, Xinjiang, Zou, Hongshuai, Fu, Yuhao, Zhang, Lijun. Band structure engineering through van der Waals heterostructing superlattices oftwo-dimensionaltransition metal dichalcogenides. INFOMAT[J]. 2021, 3(2): 201-211, https://www.webofscience.com/wos/woscc/full-record/WOS:000576372700001.
[7] 隋佳恩, 贲建伟, 臧行, 蒋科, 张山丽, 郭冰亮, 陈洋, 石芝铭, 贾玉萍, 黎大兵, 孙晓娟. 高温热处理a面AlN表面形貌演变机理. 发光学报[J]. 2021, 42(6): 810-817, http://lib.cqvip.com/Qikan/Article/Detail?id=7104814014.
[8] Ke Jiang, Xiaojuan Sun, Zhiming Shi, Hang Zang, Jianwei Ben, HuiXiong Deng, Dabing Li. Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides. LIGHT-SCIENCE & APPLICATIONS[J]. 2021, 10(1): 671-680, https://doaj.org/article/140e562a6c814998ba3234b10cd8dd3d.
[9] Kai, Cuihong, Zang, Hang, Ben, Jianwei, Jiang, Ke, Shi, Zhiming, Jia, Yuping, Cao, Xingzhong, Lu, Wei, Sun, Xiaojuan, Li, Dabing. Origination and evolution of point defects in AlN film annealed at high temperature. JOURNAL OF LUMINESCENCE[J]. 2021, 235: http://dx.doi.org/10.1016/j.jlumin.2021.118032.
[10] Jia, Yuping, Shen, Yutong, Sun, Xiaojuan, Shi, Zhiming, Jiang, Ke, Wu, Tong, Liang, Hongwei, Cui, Xingzhu, Lu, Wei, Li, Dabing. Improved performance of SiC radiation detector based on metal-insulator-semiconductor structures. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT[J]. 2021, 997: http://dx.doi.org/10.1016/j.nima.2021.165166.
[11] Ben, Jianwei, Liu, Xinke, Wang, Cong, Zhang, Yupeng, Shi, Zhiming, Jia, Yuping, Zhang, Shanli, Zhang, Han, Yu, Wenjie, Li, Dabing, Sun, Xiaojuan. 2D III-Nitride Materials: Properties, Growth, and Applications. ADVANCED MATERIALSnull. 2021, 33(27): http://dx.doi.org/10.1002/adma.202006761.
[12] Shi, Zhiming, Qi, Zhanbin, Zang, Hang, Jiang, Ke, Chen, Yang, Jia, Yuping, Wu, Tong, Zhang, Shanli, Sun, Xiaojuan, Li, Dabing. Point Defects in Monolayer h-AlN as Candidates for Single-Photon Emission. ACS APPLIED MATERIALS AND INTERFACES[J]. 2021, 13(31): 37380-37387, [13] Jia, Yuping, Sun, Xiaojuan, Shi, Zhiming, Jiang, Ke, Wu, Tong, Liang, Hongwei, Cui, Xingzhu, Lu, Wei, Li, Dabing. Improved performance of SiC radiation detectors due to optimized ohmic contact electrode by graphene insertion. DIAMOND AND RELATED MATERIALS[J]. 2021, 115: http://dx.doi.org/10.1016/j.diamond.2021.108355.
[14] Chen, Yang, Jiang, Ke, Zang, Hang, Ben, Jianwei, Zhang, Shanli, Shi, Zhiming, Jia, Yuping, Lu, Wei, Li, Dabing, Sun, Xiaojuan. Growth of high-quality wafer-scale graphene on dielectric substrate for high-response ultraviolet photodetector. CARBON[J]. 2021, 175: 155-163, http://dx.doi.org/10.1016/j.carbon.2020.12.055.
[15] Jiang, Ke, Sun, Xiaojuan, Chen, Yuxuan, Zhang, Shanli, Ben, Jianwei, Chen, Yang, Zhang, ZiHui, Jia, Yuping, Shi, Zhiming, Li, Dabing. Three-dimensional metal semiconductor meta bipolar ultraviolet phototransistor based on GaN p-i-n epilayer. APPLIED PHYSICS LETTERS[J]. 2021, 119(16): [16] Li, Zhenyu, Li, Jiefei, Jiang, Kunhong, Yuan, Songyuan, Yu, Dangkai, Wei, Hang, Shi, Zhiming, Li, Xiaotian, Chu, Haibin. PdCoNi alloy nanoparticles decorated, nitrogen-doped carbon nanotubes for highly active and durable oxygen reduction electrocatalysis. CHEMICAL ENGINEERING JOURNAL[J]. 2021, 411: http://dx.doi.org/10.1016/j.cej.2021.128527.
[17] Chen, Yang, Wu, You, Ben, Jianwei, Jiang, Ke, Jia, Yuping, Zhang, Shanli, Zang, Hang, Shi, Zhiming, Duan, Bin, Sun, Xiaojuan, Li, Dabing. A high-response ultraviolet photodetector by integrating GaN nanoparticles with graphene. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2021, 868: 159281-, http://dx.doi.org/10.1016/j.jallcom.2021.159281.
[18] Kai, Cuihong, Sun, Xiaojuan, Jia, Yuping, Jiang, Ke, Shi, Zhiming, Ben, Jianwei, Wu, You, Wang, Yong, Li, Dabing. Characterization of carrier transport behavior of specific type dislocations in GaN by light assisted KPFM. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2020, 53(23): [19] Hou, Wantong, Qi, Zhanbin, Zang, Hang, Yan, Yan, Shi, Zhiming. Thickness and strain engineering of structural and electronic properties for 2D square-octagon AlN. INTERNATIONAL JOURNAL OF SMART AND NANO MATERIALS[J]. 2020, 11(3): 288-297, http://lib.cqvip.com/Qikan/Article/Detail?id=7108157897.
[20] Chen, Yang, Jia, YuPing, Shi, ZhiMing, Sun, XiaoJuan, Li, DaBing. Van der Waals Epitaxy: A new way for growth of III-nitrides. SCIENCE CHINA-TECHNOLOGICAL SCIENCES[J]. 2020, 63(3): 528-530, https://www.webofscience.com/wos/woscc/full-record/WOS:000499958400001.
[21] Jia, Yuping, Shi, Zhiming, Hou, Wantong, Zang, Hang, Jiang, Ke, Chen, Yang, Zhang, Shanli, Qi, Zhanbin, Wu, Tong, Sun, Xiaojuan, Li, Dabing. Elimination of the internal electrostatic field in two-dimensional GaN-based semiconductors. NPJ 2D MATERIALS AND APPLICATIONS[J]. 2020, 4(1): https://doaj.org/article/ef6627badb1d40bf9af2c56ce4c8aaaa.
[22] Jiang, Ke, Sun, Xiaojuan, Ben, Jianwei, Shi, Zhiming, Jia, Yuping, Chen, Yang, Zhang, Shanli, Wu, Tong, Lu, Wei, Li, Dabing. Suppressing the luminescence of V cation -related point -defect in AlGaN grown by MOCVD on HVPE-AlN. APPLIED SURFACE SCIENCE[J]. 2020, 520: 146369-, http://dx.doi.org/10.1016/j.apsusc.2020.146369.
[23] 贲建伟, 孙晓娟, 蒋科, 陈洋, 石芝铭, 臧行, 张山丽, 黎大兵, 吕威. AlGaN基宽禁带半导体光电材料与器件. 人工晶体学报[J]. 2020, 49(11): 2046-2067, http://lib.cqvip.com/Qikan/Article/Detail?id=7103518501.
[24] Jiang, Ke, Sun, Xiaojuan, Zhang, ZiHui, Ben, Jianwei, Che, Jiamang, Shi, Zhiming, Jia, Yuping, Chen, Yang, Zhang, Shanli, Lv, Wei, Li, Dabing. Polarization-enhanced AlGaN solar-blind ultraviolet detectors. PHOTONICS RESEARCH[J]. 2020, 8(7): 1243-1252, http://lib.cqvip.com/Qikan/Article/Detail?id=7102618646.
[25] Ben, Jianwei, Shi, Zhiming, Zang, Hang, Sun, Xiaojuan, Liu, Xinke, Lu, Wei, Li, Dabing. The formation mechanism of voids in physical vapor deposited AlN epilayer during high temperature annealing. APPLIED PHYSICS LETTERS[J]. 2020, 116(25): https://www.webofscience.com/wos/woscc/full-record/WOS:000543514800001.
[26] Chen, Yang, Zang, Hang, Jiang, Ke, Ben, Jianwei, Zhang, Shanli, Shi, Zhiming, Jia, Yuping, Lu, Wei, Sun, Xiaojuan, Li, Dabing. Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy. APPLIED PHYSICS LETTERS[J]. 2020, 117(5): 051601-, https://www.webofscience.com/wos/woscc/full-record/WOS:000559329700001.
[27] Chen, Yang, Zang, Hang, Jiang, Ke, Ben, Jianwei, Zhang, Shanli, Shi, Zhiming, Jia, Yuping, Lu, Wei, Sun, Xiaojuan, Li, Dabing. Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy (vol 117, 051601, 2020). APPLIED PHYSICS LETTERSnull. 2020, 117(9): https://www.webofscience.com/wos/woscc/full-record/WOS:000568861700001.
[28] Kai Cuihong, Sun Xiaojuan, Jia Yuping, Shi Zhiming, Jiang Ke, Ben Jianwei, Wu You, Wang Yong, Liu Henan, Li Xiaohang, Li Dabing. Carrier behavior in the vicinity of pit defects in GaN characterized by ultraviolet light-assisted Kelvin probe force microscopy. SCIENCE CHINA. PHYSICS, MECHANICS & ASTRONOMY[J]. 2019, 62(6): https://www.sciengine.com/doi/10.1007/s11433-018-9320-x.
[29] Wu, You, Li, Zhiwen, Ang, KahWee, Jia, Yuping, Shi, Zhiming, Huang, Zhi, Yu, Wenjie, Sun, Xiaojuan, Liu, Xinke, Li, Dabing. Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors. PHOTONICS RESEARCH[J]. 2019, 7(10): 1127-1133, https://www.webofscience.com/wos/woscc/full-record/WOS:000488619700003.
[30] ZShi, ZCao, XSun, YJia, DLi, LCavallo, USchwingenschlogl. Uncovering the Mechanism Behind the Improved Stability of 2D OrganicInorganic Hybrid Perovskites. SMALL[J]. 2019, 15(16): https://www.webofscience.com/wos/woscc/full-record/WOS:000467263300012.
[31] Chen, Yuxuan, Li, Kuilong, Li, Zhiwen, Hu, Shengqun, Sun, Xiaojuan, Shi, Zhiming, Liu, Xinke, Li, Dabing. Enhancing thermal properties of few-layer boron nitride by high-k Al2O3 capping layer. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2019, 797: 262-268, http://dx.doi.org/10.1016/j.jallcom.2019.05.115.
[32] Shi Zhiming, Sun Xiaojuan, Jia Yuping, Liu Xinke, Zhang Shanli, Qi Zhanbin, Li Dabing. Construction of van der Waals substrates for largely mismatched heteroepitaxy systems using first principles. SCIENCE CHINA. PHYSICS, MECHANICS & ASTRONOMY[J]. 2019, 62(12): 7-, https://www.sciengine.com/doi/10.1007/s11433-019-1448-3.
[33] 余恒炜, 孙晓娟, 王星辰, 蒋科, 吴忧, 程东碧, 石芝铭, 贾玉萍, 黎大兵. 量子随机数高斯噪声信号发生器. 光学精密工程[J]. 2019, 27(7): 1492-1499, http://lib.cqvip.com/Qikan/Article/Detail?id=7002697587.
[34] Jiang, Ke, Sun, Xiaojuan, Ben, Jianwei, Shi, Zhiming, Jia, Yuping, Wu, You, Kai, Cuihong, Wang, Yong, Li, Dabing. Suppressing the compositional non-uniformity of AlGaN grown on a HVPE-AlN template with large macro-steps. CRYSTENGCOMM[J]. 2019, 21(33): 4864-4873, https://www.webofscience.com/wos/woscc/full-record/WOS:000481891000020.
[35] Jianwei Ben, Xiaojuan Sun, Yuping Jia, Ke Jiang, Zhiming Shi, You Wu, Cuihong Kai, Yong Wang, Xuguang Luo, Zhe Chuan Feng, Dabing Li. Influence of Dislocations on the Refractive Index of AlN by Nanoscale Strain Field. NANOSCALE RESEARCH LETTERS[J]. 2019, 14(1): 1-7, http://dx.doi.org/10.1186/s11671-019-3018-7.
[36] ZhiMing Shi, XiaoJuan Sun, YuPing Jia, XinKe Liu, ShanLi Zhang, ZhanBin Qi, DaBing Li. Construction of van der Waals substrates for largely mismatched heteroepitaxy systems using first principles. 中国科学:物理学、力学、天文学英文版[J]. 2019, 62(12): 89-95, http://lib.cqvip.com/Qikan/Article/Detail?id=7100270254.
[37] Liu, Xinke, Li, Kuilong, Sun, Xiaojuan, Shi, Zhiming, Huang, Zhonghui, Li, Zhiwen, Min, Long, Botcha, Venkatadivakar, Chen, Xingyuan, Xu, Xiangfu, Li, Dabing. Modified band alignment at multilayer MoS2/Al2O3 heterojunctions by nitridation treatment. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2019, 793: 599-603, http://dx.doi.org/10.1016/j.jallcom.2019.04.227.
[38] Ben, Jianwei, Sun, Xiaojuan, Jia, Yuping, Jiang, Ke, Shi, Zhiming, Liu, Henan, Wang, Yong, Kai, Cuihong, Wu, You, Li, Dabing. Defect evolution in AlN templates on PVD-AlN/sapphire substrates by thermal annealing. CRYSTENGCOMM[J]. 2018, 20(32): 4623-4629, https://www.webofscience.com/wos/woscc/full-record/WOS:000442612000013.
[39] Shi, Zhiming, Zhang, Qingyun, Schwingenschlogl, Udo. Alloying as a Route to Monolayer Transition Metal Dichalcogenides with Improved Optoelectronic Performance: Mo(S1-xSex)(2) and Mo1-yWyS2. ACS APPLIED ENERGY MATERIALS[J]. 2018, 1(5): 2208-+, http://dx.doi.org/10.1021/acsaem.8b00288.
[40] Shi, Zhiming, Wang, Xinjiang, Sun, Yuanhui, Li, Yawen, Zhang, Lijun. Interlayer coupling in two-dimensional semiconductor materials. SEMICONDUCTOR SCIENCE AND TECHNOLOGYnull. 2018, 33(9): https://www.webofscience.com/wos/woscc/full-record/WOS:000442339000001.
[41] Jia, Yuping, Sun, Xiaojuan, Shi, Zhiming, Jiang, Ke, Liu, Henan, Ben, Jianwei, Li, Dabing. Modulating the Surface State of SiC to Control Carrier Transport in Graphene/SiC. SMALL[J]. 2018, 14(26): https://www.webofscience.com/wos/woscc/full-record/WOS:000436408800015.
[42] Shi, Zhiming, Schwingenschlogl, Udo. Interaction of Monovacancies in Graphene. JOURNAL OF PHYSICAL CHEMISTRY C[J]. 2017, 121(4): 2459-2465, https://www.webofscience.com/wos/woscc/full-record/WOS:000393443200049.
[43] Shi, Zhiming, Kutana, Alex, Yu, Guangtao, Chen, Wei, Yakobson, Boris I, Schwingenschlogl, Udo, Huang, Xuri. Tailoring the Electronic and Magnetic Properties of Two-Dimensional Silicon Carbide Sheets and Ribbons by Fluorination. JOURNALOFPHYSICALCHEMISTRYC[J]. 2016, 120(28): 15407-15414, https://www.webofscience.com/wos/woscc/full-record/WOS:000380590600048.
[44] Shi, Zhiming, Kutana, Alex, Yakobson, Boris I. How Much N-Doping Can Graphene Sustain?. JOURNAL OF PHYSICAL CHEMISTRY LETTERS[J]. 2015, 6(1): 106-112, http://dx.doi.org/10.1021/jz502093c.
[45] Shi, Zhiming, Zhang, Zhuhua, Kutana, Alex, Yakobson, Boris I. Predicting Two-Dimensional Silicon Carbide Mono layers. ACS NANO[J]. 2015, 9(10): 9802-9809, https://www.webofscience.com/wos/woscc/full-record/WOS:000363915300035.
[46] Zou, Xiaolong, Liu, Mingjie, Shi, Zhiming, Yakobson, Boris I. Environment-Controlled Dislocation Migration and Superplasticity in Monolayer MoS2. NANO LETTERS[J]. 2015, 15(5): 3495-3500, https://www.webofscience.com/wos/woscc/full-record/WOS:000354906000107.
[47] Shi, Zhiming, Zhao, Xingang, Huang, Xuri. First principles investigation on the stability, magnetic and electronic properties of the fully and partially hydrogenated BN nanoribbons in different conformers. JOURNAL OF MATERIALS CHEMISTRY C[J]. 2013, 1(41): 6890-6898, https://www.webofscience.com/wos/woscc/full-record/WOS:000325763600022.
[48] Guan, Jia, Chen, Wei, Li, Yafei, Yu, Guangtao, Shi, Zhiming, Huang, Xuri, Sun, Chiachung, Chen, Zhongfang. An Effective Approach to Achieve a Spin Gapless SemiconductorHalf-MetalMetal Transition in Zigzag Graphene Nanoribbons: Attaching A Floating Induced Dipole Field via Interactions. ADVANCED FUNCTIONAL MATERIALS[J]. 2013, 23(12): 1507-1518, https://www.webofscience.com/wos/woscc/full-record/WOS:000316321800005.
[49] 石芝铭, 陈巍, 万素琴, 李辉, 黄旭日. 杂原子掺杂的含单空位缺陷BN纳米管的非线性光学性质. 高等学校化学学报[J]. 2013, 34(2): 441-446, http://lib.cqvip.com/Qikan/Article/Detail?id=44726471.
[50] Yang Chen, Ke Jiang, Hang Zang, Jianwei Ben, Shanli Zhang, Zhiming Shi, Yuping Jia, Wei L, Dabing Li, Xiaojuan Sun. In situ growth of high-quality wafer-scale graphene on dielectric substrate for high-responsivity ultraviolet photodetector. CARBON. http://dx.doi.org/10.1016/j.carbon.2020.12.055.

   

（ 1 ） 二维AlGaN的外延生长及物性研究, 主持, 国家级, 2019-01--2021-12
（ 2 ） 大功率氮化镓绿光激光器的材料生长与物理机制, 参与, 国家级, 2019-01--2023-12
（ 3 ） AlGaN材料的外延生长及物性研究, 主持, 部委级, 2018-02--2021-02

（1）低维氮化硼带隙调控的 第一性原理研究   第十五届全国MOCVD学术会议   2018-08-23

现指导学生

齐占斌  博士研究生  070205-凝聚态物理