基本信息

鲁军 男 中国科学院半导体研究所
email: Lujun@semi.ac.cn
address: 北京市海淀区清华东路甲35号
postalCode: 100083
email: Lujun@semi.ac.cn
address: 北京市海淀区清华东路甲35号
postalCode: 100083
招生信息
招生专业
080903-微电子学与固体电子学
招生方向
微电子学与固体电子学
教育背景
2010-09--2012-09 新加坡国立大学 博士后
2005-09--2010-07 中国科学院半导体研究所 博士学位
2001-09--2005-07 河北大学 学士
2005-09--2010-07 中国科学院半导体研究所 博士学位
2001-09--2005-07 河北大学 学士
工作经历
工作简历
2012-09~现在, 中国科学院半导体研究所, 副研究员
2010-09~2012-09,新加坡国立大学, 博士后
2005-09~2010-07,中国科学院半导体研究所, 博士学位
2001-09~2005-07,河北大学, 学士
2010-09~2012-09,新加坡国立大学, 博士后
2005-09~2010-07,中国科学院半导体研究所, 博士学位
2001-09~2005-07,河北大学, 学士
教授课程
半导体自旋电子材料与器件基础
半导体磁性量子结构
半导体磁性量子结构
专利与奖励
专利成果
( 1 ) L1 0 -MnGa或L1 0 -MnAl基宽线性响应磁敏传感器及制备方法, 2018, 第 1 作者, 专利号: CN106129244B
( 2 ) L1 0 ‑MnGa或MnAl基宽线性响应磁敏传感器及制备方法, 2016, 第 1 作者, 专利号: CN106129244A
( 3 ) Heusler合金为插层的MnGa基垂直磁隧道结及制备方法, 2016, 第 1 作者, 专利号: CN105977375A
( 4 ) 一种具有垂直磁各向异性的铁磁颗粒膜的制备方法, 2015, 第 1 作者, 专利号: CN104900242A
( 5 ) 对原位表面磁光克尔效应进行测量的系统及方法, 2010, 第 5 作者, 专利号: CN101685146A
( 6 ) 测量电致自旋荧光的显微测量系统, 2009, 第 4 作者, 专利号: CN101581672A
( 2 ) L1 0 ‑MnGa或MnAl基宽线性响应磁敏传感器及制备方法, 2016, 第 1 作者, 专利号: CN106129244A
( 3 ) Heusler合金为插层的MnGa基垂直磁隧道结及制备方法, 2016, 第 1 作者, 专利号: CN105977375A
( 4 ) 一种具有垂直磁各向异性的铁磁颗粒膜的制备方法, 2015, 第 1 作者, 专利号: CN104900242A
( 5 ) 对原位表面磁光克尔效应进行测量的系统及方法, 2010, 第 5 作者, 专利号: CN101685146A
( 6 ) 测量电致自旋荧光的显微测量系统, 2009, 第 4 作者, 专利号: CN101581672A
出版信息
发表论文
(1) Transverse Magnetoresistance Induced by the Nonuniformity of Superconductor, Nanomaterials, 2022, 第 5 作者
(2) Direct comparison of three-terminal and four-terminal Hanle effects in the persistent photoconductor Al0.3Ga0.7As:Si, PHYSICAL REVIEW MATERIALS, 2022, 第 4 作者
(3) Sharp interface of undoped Ge/SiGe quantum well grown by ultrahigh vacuum chemical vapor deposition, Appl. Phys. Lett, 2022,
(4) Unusual Anomalous Hall Effect in a Co$_{2}$MnSi/MnGa/Pt Trilayer, Unusual Anomalous Hall Effect in a Co2MnSi/MnGa/Pt Trilayer, Chinese Physics Letters, 2020, 第 2 作者 通讯作者
(5) Magnetic characterization of a thin Co2MnSi/L10–MnGa synthetic antiferromagnetic bilayer prepared by MBE, Magnetic characterization of a thin Co2MnSi/L10���MnGa synthetic antiferromagnetic bilayer prepared by MBE*, Chinese Physics B, 2020, 第 2 作者 通讯作者
(6) Observation of tunneling magnetoresistance effect in L1(0)-MnAl/MgO/Co2MnSi/MnAl perpendicular magnetic tunnel junctions, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2019, 第 2 作者 通讯作者
(7) Spin-orbit torque induced magnetization switching in ferrimagnetic Heusler alloy D0(22)-Mn3Ga with large perpendicular magnetic anisotropy, APPLIED PHYSICS LETTERS, 2019,
(8) Tunable Perpendicular Magnetic Anisotropy in Off-Stoichiometric Full-Heusler Alloy Co$_{2}$MnAl, Tunable Perpendicular Magnetic Anisotropy in Off-Stoichiometric Full-Heusler Alloy Co_2MnAl, Chinese Physics Letters, 2019, 第 2 作者
(9) Spontaneous perpendicular exchange bias effect in L1(0)-MnGa/FeMn bilayers grown by molecular-beam epitaxy, APPLIED PHYSICS LETTERS, 2018,
(10) Tunneling Anisotropic Magnetoresistance in $L1_{0}$-MnGa Based Antiferromagnetic Perpendicular Tunnel Junction, Tunneling Anisotropic Magnetoresistance in L10-MnGa Based Antiferromagnetic Perpendicular Tunnel Junction, Chinese Physics Letters, 2018, 第 3 作者
(11) Spin Dynamics in Ferromagnet/10-nm-Thick N-Type GaAs Quantum Well Junctions, Spin Dynamics in Ferromagnet/10-nm-Thick N-Type GaAs Quantum Well Junctions, Chinese Physics Letters, 2017, 第 4 作者
(12) Strong ferromagnetic proximity polarization in ferromagnetic metal MnGa/n-type GaAs quantum well junction, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2017, 第 4 作者
(13) Strong ferromagnetic proximity polarization in ferromagnetic metal MnGa/n-type GaAs quantum well junction, J. PHYS. D: APPL. PHYS., 2017, 第 4 作者
(14) Spin Dynamics in Ferromagnet/10-nm-Thick N-Type GaAs Quantum Well Junctions, Spin Dynamics in Ferromagnet/10-nm-Thick N-Type GaAs Quantum Well Junctions, 中国物理快报:英文版, 2017, 第 4 作者
(15) Spin Dynamics in Ferromagnet/10-nm-Thick N-Type GaAs Quantum Well Junctions, CHINPHYSLETT, 2017, 第 4 作者
(16) Design and Synthesis of an Artificial Perpendicular Hard Ferrimagnet with High Magnetic Field Stabilityies, Scientific Reports, 2017, 第 1 作者
(17) MnGa-based fully perpendicular magnetic tunnel junctions with ultrathin Co 2 MnSi interlayers, SCIENTIFIC REPORTS, 2017, 第 2 作者 通讯作者
(18) MnGa-based fully perpendicular magnetic tunnel junctions with ultrathin Co2MnSi interlayers., SCIENTIFIC REPORTS, 2017, 第 2 作者 通讯作者
(19) Design and Synthesis of an Artificial Perpendicular Hard Ferrimagnet with High Thermal and Magnetic Field Stabilities., SCIENTIFIC REPORTS, 2017, 第 1 作者
(20) Tailoring the interfacial exchange coupling of perpendicularly magnetized Co/L10-Mn1.5Ga, J. Phys. D: Appl. Phys., 2016, 第 1 作者
(21) 垂直磁各向异性L10-Mn1.67Ga超薄膜分子束外延生长与磁性研究, 中国物理学报, 2016, 第 1 作者 通讯作者
(22) 垂直磁各向异性L1_0-Mn_(1.67)Ga超薄膜分子束外延生长与磁性研究, Perpendicular magnetic properties of ultrathin L1_0-Mn_(1.67)Ga films grown by molecular-beam epitaxy, ACTA PHYSICA SINICA, 2016, 第 2 作者 通讯作者
(23) Molecular-beam epitaxy of high-quality diluted magnetic semiconductor (Ga, Mn)Sb single-crystalline films, ACTA PHYSICA SINICA, 2015, 第 2 作者 通讯作者
(24) 高质量稀磁半导体(Ga,Mn)Sb单晶薄膜分子束外延生长, Molecular-beam epitaxy of high-quality diluted magnetic semiconductor (Ga, Mn)Sb single-crystalline films, ACTA PHYSICA SINICA, 2015, 第 2 作者 通讯作者
(25) 高质量稀磁半导体(Ga, Mn)Sb单晶薄膜分子束外延生长, 中国物理学报, 2015, 第 1 作者 通讯作者
(26) Robust Manipulation of Magnetism in Dilute MagneticSemiconductor (Ga,Mn)As by Organic Molecules, ADVANCED MATERIALS, 2015, 第 7 作者
(27) Bias current dependence of the spin lifetime in insulating Al0.3Ga0.7As, APPLIED PHYSICS LETTERS, 2014, 第 3 作者
(28) Magnetization dynamics and Gilbert damping in a hybrid Fe/GaAs heterostructure, SOLID STATE COMMUNICATIONS, 2014, 第 2 作者
(29) Perpendicularly magnetized tau-MnAl (001) thin films epitaxied on GaAs, APPLIED PHYSICS LETTERS, 2013,
(30) Structural characterization and magnetic properties of perpendicularly magnetized MnAl films grown by molecular-beam epitaxy, ACTA PHYSICA SINICA, 2013, 第 4 作者
(31) Spin transport and accumulation in the persistent photoconductor Al0.3Ga0.7As, APPLIED PHYSICS LETTERS, 2013, 第 3 作者
(32) Tailoring magnetism of multifunctional MnxGa films with giant perpendicular anisotropy, APPLIED PHYSICS LETTERS, 2013,
(33) Structural characterization and magnetic properties of perpendicularly magnetized MnAl films grown by molecular-beam epitaxy, ACTA PHYSICA SINICA, 2013, 第 4 作者
(34) Evidence for Structural Phase Transitions Induced by the Triple Phase Line Shift in Self-Catalyzed GaAs Nanowires, NANO LETTERS, 2012, 第 3 作者
(35) Migration Enhanced Molecular-Beam Epitaxy of III-V Quantum Dot Arrays Using Non-Lithographic AAO Template, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2012,
(36) Raman study of ultrathin fe3o4 films on gaas(001) substrate: stoichiometry, epitaxial orientation and strain, JOURNAL OF RAMAN SPECTROSCOPY, 2011, 第 4 作者
(37) Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110), NANOSCALE RESEARCH LETTERS, 2011, 第 2 作者
(38) Band-tail shape and transport near the metal-insulator transition in Si-doped, PHYSICAL REVIEW B, 2010,
(39) Fe 和(Ga,Cr)As 薄膜的分子束外延生长及磁学性质, 2010, 第 1 作者
(40) Band-tail shape and transport near the metal-insulator transition in si-doped al0.3ga0.7as, PHYSICAL REVIEW B, 2010, 第 3 作者
(41) Spin relaxation and dephasing mechanism in (Ga,Mn)As studied by time-resolved Kerr rotation, APPLIED PHYSICS LETTERS, 2009, 第 5 作者
(42) Growth parameter dependence of magnetic property of CrAs thin film, CHINESE PHYSICS, 2007, 第 6 作者
(2) Direct comparison of three-terminal and four-terminal Hanle effects in the persistent photoconductor Al0.3Ga0.7As:Si, PHYSICAL REVIEW MATERIALS, 2022, 第 4 作者
(3) Sharp interface of undoped Ge/SiGe quantum well grown by ultrahigh vacuum chemical vapor deposition, Appl. Phys. Lett, 2022,
(4) Unusual Anomalous Hall Effect in a Co$_{2}$MnSi/MnGa/Pt Trilayer, Unusual Anomalous Hall Effect in a Co2MnSi/MnGa/Pt Trilayer, Chinese Physics Letters, 2020, 第 2 作者 通讯作者
(5) Magnetic characterization of a thin Co2MnSi/L10–MnGa synthetic antiferromagnetic bilayer prepared by MBE, Magnetic characterization of a thin Co2MnSi/L10���MnGa synthetic antiferromagnetic bilayer prepared by MBE*, Chinese Physics B, 2020, 第 2 作者 通讯作者
(6) Observation of tunneling magnetoresistance effect in L1(0)-MnAl/MgO/Co2MnSi/MnAl perpendicular magnetic tunnel junctions, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2019, 第 2 作者 通讯作者
(7) Spin-orbit torque induced magnetization switching in ferrimagnetic Heusler alloy D0(22)-Mn3Ga with large perpendicular magnetic anisotropy, APPLIED PHYSICS LETTERS, 2019,
(8) Tunable Perpendicular Magnetic Anisotropy in Off-Stoichiometric Full-Heusler Alloy Co$_{2}$MnAl, Tunable Perpendicular Magnetic Anisotropy in Off-Stoichiometric Full-Heusler Alloy Co_2MnAl, Chinese Physics Letters, 2019, 第 2 作者
(9) Spontaneous perpendicular exchange bias effect in L1(0)-MnGa/FeMn bilayers grown by molecular-beam epitaxy, APPLIED PHYSICS LETTERS, 2018,
(10) Tunneling Anisotropic Magnetoresistance in $L1_{0}$-MnGa Based Antiferromagnetic Perpendicular Tunnel Junction, Tunneling Anisotropic Magnetoresistance in L10-MnGa Based Antiferromagnetic Perpendicular Tunnel Junction, Chinese Physics Letters, 2018, 第 3 作者
(11) Spin Dynamics in Ferromagnet/10-nm-Thick N-Type GaAs Quantum Well Junctions, Spin Dynamics in Ferromagnet/10-nm-Thick N-Type GaAs Quantum Well Junctions, Chinese Physics Letters, 2017, 第 4 作者
(12) Strong ferromagnetic proximity polarization in ferromagnetic metal MnGa/n-type GaAs quantum well junction, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2017, 第 4 作者
(13) Strong ferromagnetic proximity polarization in ferromagnetic metal MnGa/n-type GaAs quantum well junction, J. PHYS. D: APPL. PHYS., 2017, 第 4 作者
(14) Spin Dynamics in Ferromagnet/10-nm-Thick N-Type GaAs Quantum Well Junctions, Spin Dynamics in Ferromagnet/10-nm-Thick N-Type GaAs Quantum Well Junctions, 中国物理快报:英文版, 2017, 第 4 作者
(15) Spin Dynamics in Ferromagnet/10-nm-Thick N-Type GaAs Quantum Well Junctions, CHINPHYSLETT, 2017, 第 4 作者
(16) Design and Synthesis of an Artificial Perpendicular Hard Ferrimagnet with High Magnetic Field Stabilityies, Scientific Reports, 2017, 第 1 作者
(17) MnGa-based fully perpendicular magnetic tunnel junctions with ultrathin Co 2 MnSi interlayers, SCIENTIFIC REPORTS, 2017, 第 2 作者 通讯作者
(18) MnGa-based fully perpendicular magnetic tunnel junctions with ultrathin Co2MnSi interlayers., SCIENTIFIC REPORTS, 2017, 第 2 作者 通讯作者
(19) Design and Synthesis of an Artificial Perpendicular Hard Ferrimagnet with High Thermal and Magnetic Field Stabilities., SCIENTIFIC REPORTS, 2017, 第 1 作者
(20) Tailoring the interfacial exchange coupling of perpendicularly magnetized Co/L10-Mn1.5Ga, J. Phys. D: Appl. Phys., 2016, 第 1 作者
(21) 垂直磁各向异性L10-Mn1.67Ga超薄膜分子束外延生长与磁性研究, 中国物理学报, 2016, 第 1 作者 通讯作者
(22) 垂直磁各向异性L1_0-Mn_(1.67)Ga超薄膜分子束外延生长与磁性研究, Perpendicular magnetic properties of ultrathin L1_0-Mn_(1.67)Ga films grown by molecular-beam epitaxy, ACTA PHYSICA SINICA, 2016, 第 2 作者 通讯作者
(23) Molecular-beam epitaxy of high-quality diluted magnetic semiconductor (Ga, Mn)Sb single-crystalline films, ACTA PHYSICA SINICA, 2015, 第 2 作者 通讯作者
(24) 高质量稀磁半导体(Ga,Mn)Sb单晶薄膜分子束外延生长, Molecular-beam epitaxy of high-quality diluted magnetic semiconductor (Ga, Mn)Sb single-crystalline films, ACTA PHYSICA SINICA, 2015, 第 2 作者 通讯作者
(25) 高质量稀磁半导体(Ga, Mn)Sb单晶薄膜分子束外延生长, 中国物理学报, 2015, 第 1 作者 通讯作者
(26) Robust Manipulation of Magnetism in Dilute MagneticSemiconductor (Ga,Mn)As by Organic Molecules, ADVANCED MATERIALS, 2015, 第 7 作者
(27) Bias current dependence of the spin lifetime in insulating Al0.3Ga0.7As, APPLIED PHYSICS LETTERS, 2014, 第 3 作者
(28) Magnetization dynamics and Gilbert damping in a hybrid Fe/GaAs heterostructure, SOLID STATE COMMUNICATIONS, 2014, 第 2 作者
(29) Perpendicularly magnetized tau-MnAl (001) thin films epitaxied on GaAs, APPLIED PHYSICS LETTERS, 2013,
(30) Structural characterization and magnetic properties of perpendicularly magnetized MnAl films grown by molecular-beam epitaxy, ACTA PHYSICA SINICA, 2013, 第 4 作者
(31) Spin transport and accumulation in the persistent photoconductor Al0.3Ga0.7As, APPLIED PHYSICS LETTERS, 2013, 第 3 作者
(32) Tailoring magnetism of multifunctional MnxGa films with giant perpendicular anisotropy, APPLIED PHYSICS LETTERS, 2013,
(33) Structural characterization and magnetic properties of perpendicularly magnetized MnAl films grown by molecular-beam epitaxy, ACTA PHYSICA SINICA, 2013, 第 4 作者
(34) Evidence for Structural Phase Transitions Induced by the Triple Phase Line Shift in Self-Catalyzed GaAs Nanowires, NANO LETTERS, 2012, 第 3 作者
(35) Migration Enhanced Molecular-Beam Epitaxy of III-V Quantum Dot Arrays Using Non-Lithographic AAO Template, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2012,
(36) Raman study of ultrathin fe3o4 films on gaas(001) substrate: stoichiometry, epitaxial orientation and strain, JOURNAL OF RAMAN SPECTROSCOPY, 2011, 第 4 作者
(37) Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110), NANOSCALE RESEARCH LETTERS, 2011, 第 2 作者
(38) Band-tail shape and transport near the metal-insulator transition in Si-doped, PHYSICAL REVIEW B, 2010,
(39) Fe 和(Ga,Cr)As 薄膜的分子束外延生长及磁学性质, 2010, 第 1 作者
(40) Band-tail shape and transport near the metal-insulator transition in si-doped al0.3ga0.7as, PHYSICAL REVIEW B, 2010, 第 3 作者
(41) Spin relaxation and dephasing mechanism in (Ga,Mn)As studied by time-resolved Kerr rotation, APPLIED PHYSICS LETTERS, 2009, 第 5 作者
(42) Growth parameter dependence of magnetic property of CrAs thin film, CHINESE PHYSICS, 2007, 第 6 作者
科研活动
科研项目
( 1 ) 高MOS沟道迁移率及其低温电子输运与器件研究, 负责人, 国家任务, 2024-12--2029-11
( 2 ) 第三代磁存储器的新材料及器件原理研究, 参与, 中国科学院计划, 2016-08--2021-07
( 3 ) Co2MnSi/L10-MnGa 磁性双层膜的垂直磁各向异性及自旋极化度, 负责人, 国家任务, 2014-01--2016-12
( 4 ) 高灵敏磁传感与磁电隔离耦合关键材料和器件, 参与, 国家任务, 2014-01--2016-12
( 5 ) 新型半导体基垂直磁各向异性材料及器件, 参与, 国家任务, 2014-01--2018-12
( 2 ) 第三代磁存储器的新材料及器件原理研究, 参与, 中国科学院计划, 2016-08--2021-07
( 3 ) Co2MnSi/L10-MnGa 磁性双层膜的垂直磁各向异性及自旋极化度, 负责人, 国家任务, 2014-01--2016-12
( 4 ) 高灵敏磁传感与磁电隔离耦合关键材料和器件, 参与, 国家任务, 2014-01--2016-12
( 5 ) 新型半导体基垂直磁各向异性材料及器件, 参与, 国家任务, 2014-01--2018-12
参与会议
(1)L10-MnGa based magnetic tunnel junction for high magnetic field sensor 2017-09-22
(2)高质量稀磁半导体(Ga,Mn)Sb薄膜及其异质结构的分子束外延生长 第十一届全国分子束外延学术会议 2015-08-25
(3)XMCD study of Co(Fe)/MnGa bilayer 2013-05-19
(2)高质量稀磁半导体(Ga,Mn)Sb薄膜及其异质结构的分子束外延生长 第十一届全国分子束外延学术会议 2015-08-25
(3)XMCD study of Co(Fe)/MnGa bilayer 2013-05-19