基本信息
罗庆 男 硕导 中国科学院微电子研究所
电子邮件： luoqing@ime.ac.cn
通信地址： 北京市朝阳区北土城西路3号
邮政编码：
电子邮件： luoqing@ime.ac.cn
通信地址： 北京市朝阳区北土城西路3号
邮政编码：
招生信息
招生专业
080903-微电子学与固体电子学
085400-电子信息
085400-电子信息
招生方向
新型存储器
工作经历
工作简历
2022-09~现在, 中国科学院微电子研究所, 研究员
2022-09~现在, 中国科学院微电子研究所, 副研究员
2017-07~2019-12,中国科学院微电子研究所, 助理研究员
2022-09~现在, 中国科学院微电子研究所, 副研究员
2017-07~2019-12,中国科学院微电子研究所, 助理研究员
专利与奖励
专利成果
（ 1 ） 可编程二极管的制备方法及铁电存储器, 发明专利, 2021, 第 1 作者, 专利号: CN112259537A
（ 2 ） 一种选通管及其制备方法, 发明专利, 2021, 第 1 作者, 专利号: CN112216793A
（ 3 ） 互补型存储单元及其制备方法、互补型存储器, 发明专利, 2020, 第 1 作者, 专利号: CN112002364A
（ 4 ） 对称型存储单元及BNN电路, 发明专利, 2020, 第 1 作者, 专利号: CN112002362A
（ 5 ） 用于选通管疲劳特性测试的装置及方法, 发明专利, 2020, 第 1 作者, 专利号: CN111965462A
（ 6 ） 一种提升选通管器件性能的方法、系统、设备和介质, 发明专利, 2020, 第 1 作者, 专利号: CN111769133A
（ 7 ） 反铁电存储器, 发明专利, 2020, 第 1 作者, 专利号: CN111769122A
（ 8 ） 1S1R MEMORY INTEGRATED STRUCTURE AND METHOD FOR FABRICATING THE SAME, 发明专利, 2020, 第 1 作者, 专利号: US20200176674(A1)
（ 9 ） 融合型存储器的写入、擦除方法, 专利授权, 2019, 第 2 作者, 专利号: CN109887532A
（ 10 ） 融合型存储器, 专利授权, 2019, 第 2 作者, 专利号: CN109860190A
（ 11 ） 神经网络运算系统, 发明专利, 2019, 第 3 作者, 专利号: CN109829540A
（ 12 ） 1S1R存储器集成结构及其制备方法, 发明专利, 2018, 第 1 作者, 专利号: CN108630810A
（ 13 ） 自整流阻变存储器及其制备方法, 发明专利, 2018, 第 1 作者, 专利号: CN108493336A
（ 14 ） 用于双极性阻变存储器的选择器件及其制备方法, 专利授权, 2017, 第 2 作者, 专利号: CN107204397A
（ 15 ） 基于过渡金属氧化物的选择器及其制备方法, 发明专利, 2017, 第 2 作者, 专利号: CN106910759A
（ 16 ） 阻变存储器及其制备方法, 发明专利, 2017, 第 1 作者, 专利号: CN106711326A
（ 17 ） Method for collecting signal with sampling frequency lower than Nyquist frequency, 发明专利, 2016, 第 5 作者, 专利号: US09455741B2
（ 18 ） 基于两端器件的脉冲参数测试系统, 发明专利, 2016, 第 2 作者, 专利号: CN105957558A
（ 19 ） 一种自选通阻变存储器件及其制备方法, 发明专利, 2016, 第 4 作者, 专利号: CN105826468A
（ 20 ） 一种基于压缩感知的一维信号随机采样方法, 发明专利, 2014, 第 2 作者, 专利号: CN103795422A
（ 21 ） 一种基于柔性衬底的传感器模块, 发明专利, 2014, 第 5 作者, 专利号: CN103645215A
（ 22 ） 一种基于块对角阵观测矩阵构造的信号压缩传感方法, 发明专利, 2014, 第 5 作者, 专利号: CN103532566A
（ 23 ） 一种随机采样斜率模数转换器, 发明专利, 2014, 第 5 作者, 专利号: CN103532552A
（ 24 ） 适用于一维缓变信号的随机采样器, 发明专利, 2013, 第 2 作者, 专利号: CN103391099A
（ 25 ） 一种以低于奈奎斯特频率的采样频率进行信号采集方法, 发明专利, 2013, 第 5 作者, 专利号: CN103346798A
（ 26 ） 基于压缩感知理论的气体识别方法, 发明专利, 2013, 第 4 作者, 专利号: CN103346799A
（ 27 ） 基于多级压缩感知的信号采样系统及方法, 发明专利, 2013, 第 5 作者, 专利号: CN103281087A
（ 28 ） 一种制备原位掺杂Pt的NiO有序纳米线阵列的方法, 发明专利, 2013, 第 10 作者, 专利号: CN103072942A
（ 29 ） 在常温下检测气体的基于柔性衬底的敏感膜的制备方法, 发明专利, 2013, 第 7 作者, 专利号: CN103033539A
（ 30 ） 在常温下检测气体的基于柔性衬底的敏感膜的制备方法, 发明专利, 2013, 第 7 作者, 专利号: CN103033538A
（ 31 ） 一种基于柔性衬底的气体传感器敏感膜的制备方法, 发明专利, 2013, 第 7 作者, 专利号: CN103033537A
（ 2 ） 一种选通管及其制备方法, 发明专利, 2021, 第 1 作者, 专利号: CN112216793A
（ 3 ） 互补型存储单元及其制备方法、互补型存储器, 发明专利, 2020, 第 1 作者, 专利号: CN112002364A
（ 4 ） 对称型存储单元及BNN电路, 发明专利, 2020, 第 1 作者, 专利号: CN112002362A
（ 5 ） 用于选通管疲劳特性测试的装置及方法, 发明专利, 2020, 第 1 作者, 专利号: CN111965462A
（ 6 ） 一种提升选通管器件性能的方法、系统、设备和介质, 发明专利, 2020, 第 1 作者, 专利号: CN111769133A
（ 7 ） 反铁电存储器, 发明专利, 2020, 第 1 作者, 专利号: CN111769122A
（ 8 ） 1S1R MEMORY INTEGRATED STRUCTURE AND METHOD FOR FABRICATING THE SAME, 发明专利, 2020, 第 1 作者, 专利号: US20200176674(A1)
（ 9 ） 融合型存储器的写入、擦除方法, 专利授权, 2019, 第 2 作者, 专利号: CN109887532A
（ 10 ） 融合型存储器, 专利授权, 2019, 第 2 作者, 专利号: CN109860190A
（ 11 ） 神经网络运算系统, 发明专利, 2019, 第 3 作者, 专利号: CN109829540A
（ 12 ） 1S1R存储器集成结构及其制备方法, 发明专利, 2018, 第 1 作者, 专利号: CN108630810A
（ 13 ） 自整流阻变存储器及其制备方法, 发明专利, 2018, 第 1 作者, 专利号: CN108493336A
（ 14 ） 用于双极性阻变存储器的选择器件及其制备方法, 专利授权, 2017, 第 2 作者, 专利号: CN107204397A
（ 15 ） 基于过渡金属氧化物的选择器及其制备方法, 发明专利, 2017, 第 2 作者, 专利号: CN106910759A
（ 16 ） 阻变存储器及其制备方法, 发明专利, 2017, 第 1 作者, 专利号: CN106711326A
（ 17 ） Method for collecting signal with sampling frequency lower than Nyquist frequency, 发明专利, 2016, 第 5 作者, 专利号: US09455741B2
（ 18 ） 基于两端器件的脉冲参数测试系统, 发明专利, 2016, 第 2 作者, 专利号: CN105957558A
（ 19 ） 一种自选通阻变存储器件及其制备方法, 发明专利, 2016, 第 4 作者, 专利号: CN105826468A
（ 20 ） 一种基于压缩感知的一维信号随机采样方法, 发明专利, 2014, 第 2 作者, 专利号: CN103795422A
（ 21 ） 一种基于柔性衬底的传感器模块, 发明专利, 2014, 第 5 作者, 专利号: CN103645215A
（ 22 ） 一种基于块对角阵观测矩阵构造的信号压缩传感方法, 发明专利, 2014, 第 5 作者, 专利号: CN103532566A
（ 23 ） 一种随机采样斜率模数转换器, 发明专利, 2014, 第 5 作者, 专利号: CN103532552A
（ 24 ） 适用于一维缓变信号的随机采样器, 发明专利, 2013, 第 2 作者, 专利号: CN103391099A
（ 25 ） 一种以低于奈奎斯特频率的采样频率进行信号采集方法, 发明专利, 2013, 第 5 作者, 专利号: CN103346798A
（ 26 ） 基于压缩感知理论的气体识别方法, 发明专利, 2013, 第 4 作者, 专利号: CN103346799A
（ 27 ） 基于多级压缩感知的信号采样系统及方法, 发明专利, 2013, 第 5 作者, 专利号: CN103281087A
（ 28 ） 一种制备原位掺杂Pt的NiO有序纳米线阵列的方法, 发明专利, 2013, 第 10 作者, 专利号: CN103072942A
（ 29 ） 在常温下检测气体的基于柔性衬底的敏感膜的制备方法, 发明专利, 2013, 第 7 作者, 专利号: CN103033539A
（ 30 ） 在常温下检测气体的基于柔性衬底的敏感膜的制备方法, 发明专利, 2013, 第 7 作者, 专利号: CN103033538A
（ 31 ） 一种基于柔性衬底的气体传感器敏感膜的制备方法, 发明专利, 2013, 第 7 作者, 专利号: CN103033537A
出版信息
发表论文
[1] Science. 2023, 通讯作者
[2] Huoqiang, Xiaoxin Xu, Qing Luo, Guozhong Xing, Feng Zhang, Ming Liu. A Computing-in-memory macro with three-dimensional random-access memory. Nature Electronics[J]. 2022, 第 3 作者
[3] Yaxin Ding, Junjie An, Jiabin Shen, Shujing Jia, Jingrui Guo, Lingfei Wang, Tiancheng Gong, Pengfei Jiang, Yuan Wang, Yuting Chen, Min Zhu, Chunmeng Dou, Qing Luo. Low‐Voltage and High Thermal Stability Single‐Element Te Selector with Failed Bit Pruning Operation Enabling Robust Cross‐Point Memory. Advanced Electronic Materials[J]. 2022,
[4] 丁庆婷, 蒋海军, 李憬, 刘超, 余杰, 陈佩, 赵昱霖, 丁亚欣, 龚天城, 杨建国, 罗庆, 刘琦, 吕杭炳, 刘明. Unified 0.75pJ/Bit TRNG and Attack Resilient 2F2/Bit PUF for Robust Hardware Security Solutions with 4-layer Stacking 3D NbOx Threshold Switching Array. 2021 IEEE International Electron Devices Meeting (IEDM). 2021, 第 11 作者
[5] 窦春萌, 许晓欣, 张续猛, 王琳方, 叶望, 安俊杰, 杨建国, 罗庆, 时拓, 刘璟, 尚大山, 张峰, 刘琦, 刘明. Enabling RRAM-Based Brain-Inspired Computation by Co-design of Device, Circuit, and System. IEDM. 2021, 第 8 作者
[6] 龚天成, 胡乔, 张栋林, 蒋海军, 杨建国, 许晓欣, 罗庆, 刘琦, 吕杭炳, 刘明. A 128kb Stochastic Computing Chip based on RRAM Flicker Noise with High Noise Density and Nearly Zero Autocorrelation on 28-nm CMOS Platform. 2021 IEEE International Electron Devices Meeting (IEDM). 2021, 第 7 作者
[7] Reaz, Mahmud, Tonigan, Andrew M, Li, Kan, Smith, M Brandon, Rony, Mohammed W, Gorchichko, Mariia, OHara, Andrew, Linten, Dimitri, Mitard, Jerome, Fang, Jingtian, Zhang, En Xia, Alles, Michael L, Weller, Robert A, Fleetwood, Daniel M, Reed, Robert A, Fischetti, Massimo, V, Pantelides, Sokrates T, WeedenWright, Stephanie L, Schrimpf, Ronald D. 3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2021, 68(5): 2556-2563, http://dx.doi.org/10.1109/TED.2021.3068328.
[8] XiaoXinXu, QingLuo, TianChengGong, HangBingLv, QiLiu, MingLiu. Resistive switching memory for high density storage and computing. Chinese Physics B[J]. 2021, 第 2 作者30(5): 58702-058702, https://cpb.iphy.ac.cn/EN/10.1088/1674-1056/abe0c4.
[9] Jiang, Pengfei, Luo, Qing, Xu, Xiaoxin, Gong, Tiancheng, Yuan, Peng, Wang, Yuan, Gao, Zhaomeng, Wei, Wei, Tai, Lu, Lv, Hangbing. Wake-Up Effect in HfO2-Based Ferroelectric Films. ADVANCED ELECTRONIC MATERIALS. 2021, 第 2 作者 通讯作者 7(1): http://dx.doi.org/10.1002/aelm.202000728.
[10] Gong, Tiancheng, Dong, Danian, Luo, Qing, Xu, Xiaoxin, Yang, Jianguo, Yu, Jie, Ding, Qingting, Lv, Hangbing, Liu, Ming. Quantitative Analysis on Resistance Fluctuation of Resistive Random Access Memory by Low Frequency Noise Measurement. IEEE ELECTRON DEVICE LETTERS[J]. 2021, 第 3 作者42(3): 312-314, https://www.webofscience.com/wos/woscc/full-record/WOS:000622098100004.
[11] Xu, Xiaoxin, Yu, Jie, Gong, Tiancheng, Yang, Jianguo, Yin, Jiahao, Dong, Da Nian, Luo, Qing, Liu, Jing, Yu, Zhaoan, Liu, Qi, Lv, Hangbing, Liu, Ming, IEEE. First Demonstration of OxRRAM Integration on 14nm FinFet Platform and Scaling Potential Analysis towards Sub-10nm Node. 2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM). 2020, 第 7 作者
[12] Huo, Qiang, Liu, Ming, Song, Renjun, Lei, Dengyun, Luo, Qing, Wu, Zhenhua, Wu, Zuheng, Zhao, Xiaojin, Zhang, Feng, Li, Ling. Demonstration of 3D Convolution Kernel Function Based on 8-Layer 3D Vertical Resistive Random Access Memory. IEEE ELECTRON DEVICE LETTERS[J]. 2020, 第 5 作者41(3): 497-500, http://dx.doi.org/10.1109/LED.2020.2970536.
[13] Liu, Chao, Yang, Jianguo, Jiang, Pengfei, Wang, Qiao, Zhang, Donglin, Gong, Tiancheng, Ding, Qingting, Zhao, Yuling, Luo, Qing, Xue, Xiaoyong, Lv, Hangbing, Liu, Ming. A Low Power 4T2C nvSRAM With Dynamic Current Compensation Operation Scheme. IEEETRANSACTIONSONVERYLARGESCALEINTEGRATIONVLSISYSTEMS[J]. 2020, 第 9 作者28(11): 2469-2473, http://dx.doi.org/10.1109/TVLSI.2020.3019524.
[14] Cheng, Long, Li, Jiancong, Zheng, HaoXuan, Yuan, Peng, Yin, Jiahao, Yang, Ling, Luo, Qing, Li, Yi, Lv, Hangbing, Chang, TingChang, Miao, Xiangshui. In-Memory Hamming Weight Calculation in a 1T1R Memristive Array. ADVANCED ELECTRONIC MATERIALS[J]. 2020, 第 7 作者6(9): https://www.webofscience.com/wos/woscc/full-record/WOS:000555849700001.
[15] Zhang, Xumeng, Zhuo, Ye, Luo, Qing, Wu, Zuheng, Midya, Rivu, Wang, Zhongrui, Song, Wenhao, Wang, Rui, Upadhyay, Navnidhi K, Fang, Yilin, Kiani, Fatemeh, Rao, Mingyi, Yang, Yang, Xia, Qiangfei, Liu, Qi, Liu, Ming, Yang, J Joshua. An artificial spiking afferent nerve based on Mott memristors for neurorobotics. NATURE COMMUNICATIONS[J]. 2020, 第 3 作者11(1):
[16] Qing Luo, Yan Cheng, Jianguo Yang, Rongrong Cao, Haili Ma, Yang Yang, Rong Huang, Wei Wei, Yonghui Zheng, Tiancheng Gong, Jie Yu, Xiaoxin Xu, Peng Yuan, Xiaoyan Li, Lu Tai, Haoran Yu, Dashan Shang, Qi Liu, Bing Yu, Qiwei Ren, Hangbing Lv, Ming Liu. A highly CMOS compatible hafnia-based ferroelectric diode. NATURE COMMUNICATIONS[J]. 2020, 第 1 作者11(1): https://doaj.org/article/c59ff6c19c2849768da9016b0a30f359.
[17] Yu Jie, Xu Xiaoxin, Gong Tiancheng, Luo Qing, Tai Lu, Li Xiaoyan, Yuan Peng, Dong Danian, Yin Jiahao, Ding Qingting, Lv Hangbing, Liu Ming, IEEE. Uniformity and Endurance Enhancement of Valance Changed Resistive Switching Memory (VCM) by a New Pulse Method. 2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC). 2019, 第 4 作者http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000483036000027.
[18] Luo, Qing, Zhang, Xumeng, Yu, Jie, Wang, Wei, Gong, Tiancheng, Xu, Xiaoxin, Yin, Jiahao, Yuan, Peng, Tai, Lu, Dong, Danian, Lv, Hangbing, Long, Shibing, Liu, Qi, Liu, Ming. Memory Switching and Threshold Switching in a 3D Nanoscaled NbOX System. IEEE ELECTRON DEVICE LETTERS[J]. 2019, 第 1 作者40(5): 718-721, http://dx.doi.org/10.1109/LED.2019.2904279.
[19] Yin, Jiahao, Dou, Chunmeng, Dong, Danian, Yu, Jie, Xu, Xiaoxin, Luo, Qing, Gong, Tiancheng, Tai, Lu, Yuan, Peng, Xue, Xiaoyong, Liu, Ming, Lv, Hangbing. A 0.75V reference clamping sense amplifier for low-power high-density ReRAM with dynamic pre-charge technique. IEICE ELECTRONICS EXPRESS[J]. 2019, 第 6 作者16(12): http://dx.doi.org/10.1587/elex.16.20190201.
[20] Luo, Qing, Ma, Haili, Su, Hailei, Xue, KanHao, Cao, Rongrong, Gao, Zhaomeng, Yu, Jie, Gong, Tiancheng, Xu, Xiaoxin, Yin, Jiahao, Yuan, Peng, Tai, Lu, Dong, Danian, Long, Shibing, Liu, Qi, Miao, XiangShui, Lv, Hangbing, Liu, Ming. Composition-Dependent Ferroelectric Properties in Sputtered HfXZr1-XO2 Thin Films. IEEE ELECTRON DEVICE LETTERS[J]. 2019, 第 1 作者40(4): 570-573, http://dx.doi.org/10.1109/LED.2019.2902609.
[21] 郑旭, 余兆安, 罗庆. 三维神经网络中Nb2O5-x突触器件的脉冲操作模式优化研究. 微纳电子与智能制造[J]. 2019, 第 3 作者71-75, http://lib.cqvip.com/Qikan/Article/Detail?id=00002FUILH387JP167DO5JP16NR.
[22] Yu, Jie, Xu, Xiaoxin, Gong, Tiancheng, Luo, Qing, Dong, Danian, Yuan, Peng, Tai, Lu, Yin, Jiahao, Zhu, Xi, Wu, Xiulong, Lv, Hangbing, Liu, Ming. Suppression of Filament Overgrowth in Conductive Bridge Random Access Memory by Ta2O5/TaOx Bi-Layer Structure. NANOSCALE RESEARCH LETTERS[J]. 2019, 第 4 作者14(1): https://doaj.org/article/7ee6b4b8ee664d50b8088691c5f2d980.
[23] 于浩然, 马海力, 罗庆. 下电极TiN粗糙度对HZO薄膜铁电性的影响. 湘潭大学学报:自然科学版[J]. 2019, 第 3 作者41(5): 121-126, http://lib.cqvip.com/Qikan/Article/Detail?id=7100750048.
[24] Danian Dong, Xiulong Wu, Tiancheng Gong, Ming Liu, Hangbing Lv, Jie Yu, Xiaoxin Xu, Xi Zhu, Jiahao Yin, Peng Yuan, Qing Luo, Lu Tai. Suppression of filament overgrowth in conductive bridge random access memory by tao/tao bi-layer structure.. NANOSCALE RESEARCH LETTERS[J]. 2019, 第 11 作者Vol.14 no.1: 111, http://www.corc.org.cn/handle/1471x/2205900.
[25] Ma, Haili, Zhang, Xumeng, Wu, Facai, Luo, Qing, Gong, Tiancheng, Yuan, Peng, Xu, Xiaoxin, Liu, Yu, Zhao, Shengjie, Zhang, Kaiping, Lu, Cheng, Zhang, Peiwen, Feng, Jie, Lv, Hangbing, Liu, Ming. A Self-Rectifying Resistive Switching Device Based on HfO2/TaOx Bilayer Structure. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2019, 第 4 作者66(2): 924-928, http://dx.doi.org/10.1109/TED.2018.2883192.
[26] Cao, Rongrong, Song, Bing, Shang, D S, Yang, Yang, Luo, Qing, Wu, Shuyu, Li, Yue, Wang, Yan, Lv, Hangbing, Liu, Qi, Liu, Ming. Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode. IEEE ELECTRON DEVICE LETTERS[J]. 2019, 第 5 作者40(11): 1744-1747,
[27] Gong, Tiancheng, Luo, Qing, Lv, Hangbing, Xu, Xiaoxin, Yu, Jie, Yuan, Peng, Dong, Danian, Chen, Chuanbing, Yin, Jiahao, Tai, Lu, Zhu, Xi, Liu, Qi, Long, Shibing, Liu, Ming. Unveiling the Switching Mechanism of a TaOx/HfO2 Self-Selective Cell by Probing the Trap Profiles With RTN Measurements. IEEE ELECTRON DEVICE LETTERS[J]. 2018, 第 2 作者39(8): 1152-1155, http://dx.doi.org/10.1109/LED.2018.2849730.
[28] Wu, Quantan, Wang, Hong, Luo, Qing, Banerjee, Writam, Cao, Jingchen, Zhang, Xumeng, Wu, Facai, Liu, Qi, Li, Ling, Liu, Ming. Full imitation of synaptic metaplasticity based on memristor devices. NANOSCALE[J]. 2018, 第 3 作者10(13): 5875-5881, https://www.webofscience.com/wos/woscc/full-record/WOS:000428788200012.
[29] Luo, Qing, Zhang, Xumeng, Hu, Yuan, Gong, Tiancheng, Xu, Xiaoxin, Yuan, Peng, Ma, Haili, Dong, Danian, Lv, Hangbing, Long, Shibing, Liu, Qi, Liu, Ming. Self-Rectifying and Forming-Free Resistive-Switching Device for Embedded Memory Application. IEEE ELECTRON DEVICE LETTERS[J]. 2018, 第 1 作者39(5): 664-667, http://dx.doi.org/10.1109/LED.2018.2821162.
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科研活动
科研项目
（ 1 ） 阻变存储器的三维集成, 负责人, 国家任务, 2020-01--2022-12
（ 2 ） 基于ALD氧化物半导体的2T0C三维DRAM存储器, 负责人, 国家任务, 2023-01--2027-12
（ 3 ） 铪基铁电存储器机理与集成技术研究, 负责人, 国家任务, 2022-11--2025-10
（ 2 ） 基于ALD氧化物半导体的2T0C三维DRAM存储器, 负责人, 国家任务, 2023-01--2027-12
（ 3 ） 铪基铁电存储器机理与集成技术研究, 负责人, 国家任务, 2022-11--2025-10
指导学生
已指导学生
王博平 硕士研究生 085400-电子信息
现指导学生
彭学阳 硕士研究生 080903-微电子学与固体电子学
李冠霖 硕士研究生 080903-微电子学与固体电子学
袁鸿烨 硕士研究生 085400-电子信息
刘炫熙 硕士研究生 085400-电子信息
乔栋平 硕士研究生 085400-电子信息
魏倩倩 硕士研究生 085400-电子信息
于迅 硕士研究生 085400-电子信息
张传理 硕士研究生 080903-微电子学与固体电子学