基本信息
黎大兵 男 博导 长春光学精密机械与物理研究所
电子邮件:lidb@ciomp.ac.cn
通信地址:长春市东南湖大路3888号
邮政编码:130033

研究领域

GaN基光电子材料与器件

招生信息

招收有志于从事GaN研究,具有物理,材料,和电子背景的学生。
招生专业
070205-凝聚态物理
招生方向
GaN基半导体材料MOCVD生长,GaN基紫外光电子器件

教育背景

2001-09--2004-07 中国科学院研究生院(中科院半导体所) 博士
1998-08--2001-03 吉林大学 硕士
1994-08--1998-07 吉林大学 学士
出国学习工作
2004年~2008年 日本三重大学 博士后、JSPS外国人特别研究员

工作经历

2007年至今 中国科学院长春光学精密机械与物理研究所

教授课程

半导体材料与光电子学

专利与奖励

   
奖励信息
(1) 吉林省自然科学学术成果奖,一等奖,省级,2013
(2) 中国科学院青年促进会会员,院级级,2011
(3) 卢嘉锡青年人才奖,院级级,2009
(4) Young Scientist Award,其他级,2006

出版信息

   
发表论文
[1] Zhiwei Xie, Ke Jiang, Shanli Zhang, Jianwei Ben, Mingrui Liu, Shunpeng Lv, Yang Chen, Yuping Jia, Xiaojuan Sun, Dabing Li. Nonvolatile and reconfigurable two-terminal electro-optic duplex memristor based on III-nitride semiconductors. LIGHT: SCIENCE & APPLICATIONS[J]. 2024, 第 10 作者13(1): http://dx.doi.org/10.1038/s41377-024-01422-4.
[2] Materials Today Physics. 2024,   通讯作者  
[3] Chen, Yang, Shi, Zhiming, Zhang, Shanli, Yue, Yuanyuan, Zang, Hang, Ben, Jianwei, Jiang, Ke, Jia, Yuping, Sun, Xiaojuan, Li, Dabing. Centimeter-Transferable III-Nitride Membrane Enabled by Interfacial Adhesion Control for a Flexible Photosensitive Device. ACS APPLIED MATERIALS & INTERFACES[J]. 2023, 第 10 作者  通讯作者  15(26): 31954-31965, http://dx.doi.org/10.1021/acsami.3c04213.
[4] Song, Ying, Shan, Yuwei, Wang, Weiming, Chang, Kainan, Zheng, Ze, Shi, Zhiming, Li, Dabing, Cheng, Jin Luo. Second Harmonic Generation in Exfoliated Few-Layer ReS2. ADVANCED OPTICAL MATERIALS. 2023, 第 7 作者http://dx.doi.org/10.1002/adom.202300111.
[5] Yanze Feng, Runkun Chen, Junbo He, Liujian Qi, Yanan Zhang, Tian Sun, Xudan Zhu, Weiming Liu, Weiliang Ma, Wanfu Shen, Chunguang Hu, Xiaojuan Sun, Dabing Li, Rongjun Zhang, Peining Li, Shaojuan Li. Visible to mid-infrared giant in-plane optical anisotropy in ternary van der Waals crystals. NATURE COMMUNICATIONS[J]. 2023, 第 13 作者14(1): 1-8, http://dx.doi.org/10.1038/s41467-023-42567-x.
[6] 聂子凯, 贲建伟, 张恩韬, 马晓宝, 张山丽, 石芝铭, 吕顺鹏, 蒋科, 孙晓娟, 黎大兵. 台阶聚束AlN高温热退火形貌演化研究. 人工晶体学报. 2023, 第 10 作者52(6): 1016-1024, http://lib.cqvip.com/Qikan/Article/Detail?id=7110025678.
[7] Wang, Xianjun, Jiang, Ke, Sun, Xiaojuan, Zhang, ZiHui, Chen, Yuxuan, Wang, Bingxiang, Li, Dabing. Valence subbands profile regulation in AlGaN quantum well based on k center dot p theory. PHYSICA SCRIPTA[J]. 2023, 第 7 作者  通讯作者  98(3): http://dx.doi.org/10.1088/1402-4896/acb860.
[8] Rajan, Rahul A, Ma, Xiaobao, Li, Dabing, Shi, Zhiming, Yu, Weili, Yang, Jianjun. Inhibiting Nonradiative Recombination and Scattering Losses via Ultrafast Pulse Irradiation for Enhanced Perovskite Lasing. ACS PHOTONICS. 2023, 第 3 作者http://dx.doi.org/10.1021/acsphotonics.3c00669.
[9] Chen, Yuxuan, Jiang, Ke, Sun, Xiaojuan, Zhang, ZiHui, Zhang, Shanli, Ben, Jianwei, Wang, Bingxiang, Guo, Long, Li, Dabing. Optimizing metal/n-AlGaN contact by recessed AlGaN heterostructure with a polarization effect. NANOSCALE ADVANCES[J]. 2023, 第 9 作者  通讯作者  5(9): 2530-2536, http://dx.doi.org/10.1039/d2na00813k.
[10] Opto-Electronic Advances. 2023,   通讯作者  
[11] Yuxuan Chen, Ke Jiang, Xiaojuan Sun, Zi-Hui Zhang, Shanli Zhang, Jianwei Ben, Bingxiang Wang, Long Guo, Dabing Li. Optimizing metal/n-AlGaN contact by recessed AlGaN heterostructure with polarization effect. Nanoscale Advances[J]. 2023, 第 9 作者  通讯作者  
[12] Jiang, Nianlei, Chen, Yang, Lv, Bingchen, Jiang, Ke, Zhang, Shanli, Lu, Shunpeng, Li, Shaojuan, Tao, Tao, Sun, Xiaojuan, Li, Dabing. Plasmonic-enhanced efficiency of AlGaN-based deep ultraviolet LED by graphene/Al nanoparticles/graphene hybrid structure. Optics Letters[J]. 2023, 第 10 作者  通讯作者  48(12): 3175-3178, https://opg.optica.org/ol/fulltext.cfm?uri=ol-48-12-3175&id=531326.
[13] Zang, Hang, Liu, Mingrui, Jia, Yuping, Jiang, Ke, Ben, Jianwei, Chen, Yang, Lv, Shunpeng, Sun, Xioajuan, Li, Dabing. Tunable piezoelectric and ferroelectric responses of Al1-xScxN: The role of atomic arrangement. 中国科学 物理学 力学 天文学[J]. 2023, 第 9 作者  通讯作者  66(7): 277711, 
[14] Hang Zang, Zhiming Shi, JianWei Ben, Ke Jiang, Shanli Zhang, Liu, Mingrui, Tong Wu, Yuping Jia, Xiaojuan Sun, Dabing Li. Growth Mechanism and Electronic Property of Stacking Mismatch Boundaries in Wurtzite III-Nitride Materials. Physical Review B[J]. 2023, 第 10 作者  通讯作者  107: 165308, 
[15] Yang, Changjin, Liang, Lei, Qin, Li, Tang, Hui, Lei, Yuxin, Jia, Peng, Chen, Yongyi, Wang, Yubing, Song, Yu, Qiu, Cheng, Zheng, Chuantao, Zhao, Huan, Li, Xin, Li, Dabing, Wang, Lijun. Advances in silicon-based, integrated tunable semiconductor lasers. NANOPHOTONICS[J]. 2023, 第 14 作者12(2): 
[16] Zang, Hang, Ben, Jianwei, Jiang, Ke, Chen, Yang, Zhang, Shanli, Liu, Mingrui, Wu, Tong, Jia, Yuping, Sun, Xiaojuan, Li, Dabing. Growth mechanism and electronic properties of stacking mismatch boundaries in wurtzite III-nitride material. Physical Review B[J]. 2023, 第 10 作者  通讯作者  107(16): 165308, 
[17] Xianjun Wang, Ke Jiang, Xiaojuan Sun, Zi-Hui Zhang, Yuxuan Chen, Bingxiang Wang, Dabing Li. Valence subbands profile regulation in AlGaN quantum well based on k∙p theory. Physica Scripta[J]. 2023, 第 7 作者  通讯作者  
[18] Journal of Physical Chemistry Letters. 2023,   通讯作者  
[19] Chunyue Zhang, Ke Jiang, Xiaojuan Sun, Dabing Li. Recent progress on AlGaN based deep ultraviolet light-emit- 2ting diodes below 250 nm. Crystals[J]. 2022, 第 4 作者  通讯作者  
[20] Fu, Danyang, Lei, Dan, Li, Zhe, Zhang, Gang, Huang, Jiali, Sun, Xiaojuan, Wang, Qikun, Li, Dabing, Wang, Jiang, Wu, Liang. Toward Phi 56 mm Al-Polar AlN Single Crystals Grown by the Homoepitaxial PVT Method. CRYSTAL GROWTH & DESIGN[J]. 2022, 第 8 作者22(5): 3462-3470, http://dx.doi.org/10.1021/acs.cgd.2c00240.
[21] Liu, Mingrui, Yue, Jianing, Meng, Jianchao, Shao, Tingna, Yao, Chunli, Sun, Xiaojuan, Nie, Jiacai, Li, Dabing. Sign reversal of planar Hall effect with temperature in La-doped Sr2IrO4 films. APPLIED PHYSICS LETTERS[J]. 2022, 第 8 作者  通讯作者  122(2): http://dx.doi.org/10.1063/5.0134002.
[22] Chen, Yang, Zang, Hang, Ben, Jianwei, Zhang, Shanli, Jiang, Ke, Shi, Zhiming, Jia, Yuping, Liu, Mingrui, Sun, Xiaojuan, Li, Dabing. AlGaN UV Detector with Largely Enhanced Heat Dissipation on Mo Substrate Enabled by van der Waals Epitaxy. CRYSTAL GROWTH & DESIGN[J]. 2022, 第 10 作者  通讯作者  23: 1162-1171, 
[23] Shi, Zhiming, Zang, Hang, Ma, Xiaobao, Yang, Yuxin, Jiang, Ke, Chen, Yang, Jia, Yuping, Sun, Xiaojuan, Li, Dabing. Grain boundary-driven magnetism in aluminum nitride. APPLIED PHYSICS LETTERS[J]. 2022, 第 9 作者  通讯作者  121(24): 
[24] Chen, Yang, Zang, Hang, Zhang, Shanli, Shi, Zhiming, Ben, Jianwei, Jiang, Ke, Jia, Yuping, Liu, Mingrui, Li, Dabing, Sun, Xiaojuan. Van der Waals Epitaxy of c-Oriented Wurtzite AlGaN on Polycrystalline Mo Substrates for Enhanced Heat Dissipation. ACS APPLIED MATERIALS & INTERFACES[J]. 2022, 第 9 作者14(33): 37947-37957, http://dx.doi.org/10.1021/acsami.2c10039.
[25] Qi, Zhanbin, Shi, Zhiming, Zang, Hang, Ma, Xiaobao, Yang, Yuxin, Jia, Yuping, Jiang, Ke, Sun, Xiaojuan, Li, Dabing. Morphology and carrier mobility of high-B-content BxAl1-xN ternary alloys from an ab initio global search. NANOSCALE[J]. 2022, 第 9 作者  通讯作者  14(31): 11335-11342, http://dx.doi.org/10.1039/d2nr00467d.
[26] An, Junru, Zhao, Xingyu, Zhang, Yanan, Liu, Mingxiu, Yuan, Jian, Sun, Xiaojuan, Zhang, Zhiyu, Wang, Bin, Li, Shaojuan, Li, Dabing. Perspectives of 2D Materials for Optoelectronic Integration. ADVANCED FUNCTIONAL MATERIALS[J]. 2022, 第 10 作者  通讯作者  32(14): http://dx.doi.org/10.1002/adfm.202110119.
[27] Zou, Yuting, Shi, Yaru, Wang, Bin, Liu, Mingxiu, An, Junru, Zhang, Nan, Qi, Liujian, Yu, Weili, Li, Dabing, Li, Shaojuan. Electrical and Optoelectrical Dual-Modulation in Perovskite-Based Vertical Field-Effect Transistors. ACS PHOTONICS[J]. 2022, 第 9 作者10(7): 2280-2289, http://dx.doi.org/10.1021/acsphotonics.2c01501.
[28] Tao Huang, Zhicheng Zhu, Chen Zhao, Wenchi Kong, Xuhang Chen, Ruiyan Li, Zhi Yu, Zhiming Shi, Dabing Li, Bai Yang, Weili Yu. Enhancing two-dimensional perovskite photodetector performance through balancing carrier density and directional transport. Journal of Materials Chemistry A[J]. 2022, 第 9 作者10: 21044-21052, 
[29] Chen, Yang, Shi, Zhiming, Zhang, Shanli, Ben, Jianwei, Jiang, Ke, Zang, Hang, Jia, Yuping, Lu, Wei, Li, Dabing, Sun, Xiaojuan. The van der Waals Epitaxy of High-Quality N-Polar Gallium Nitride for High-Response Ultraviolet Photodetectors with Polarization Electric Field Modulation. ADVANCED ELECTRONIC MATERIALS. 2021, 第 9 作者
[30] Jiang, Ke, Sun, Xiaojuan, Shi, Zhiming, Zang, Hang, Ben, Jianwei, Deng, HuiXiong, Li, Dabing. Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides. LIGHT-SCIENCE & APPLICATIONS[J]. 2021, 第 7 作者  通讯作者  10(1): 671-680, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=6959709&detailType=1.
[31] 隋佳恩, 贲建伟, 臧行, 蒋科, 张山丽, 郭冰亮, 陈洋, 石芝铭, 贾玉萍, 黎大兵, 孙晓娟. 高温热处理a面AlN表面形貌演变机理. 发光学报[J]. 2021, 第 10 作者42(6): 810-817, https://doi.org/10.37188/CJL.20210111.
[32] Kai, Cuihong, Zang, Hang, Ben, Jianwei, Jiang, Ke, Shi, Zhiming, Jia, Yuping, Cao, Xingzhong, Lu, Wei, Sun, Xiaojuan, Li, Dabing. Origination and evolution of point defects in AlN film annealed at high temperature. JOURNAL OF LUMINESCENCE[J]. 2021, 第 10 作者  通讯作者  235: http://dx.doi.org/10.1016/j.jlumin.2021.118032.
[33] Zang, Hang, Sun, Xiaojuan, Jiang, Ke, Chen, Yang, Zhang, Shanli, Ben, Jianwei, Jia, Yuping, Wu, Tong, Shi, Zhiming, Li, Dabing. Cation Vacancy in Wide Bandgap III-Nitrides as Single-Photon Emitter: A First-Principles Investigation. ADVANCED SCIENCE[J]. 2021, 第 10 作者  通讯作者  8(18): http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000678874400001.
[34] Xin Li, Shuyu Ni, Yan Jiang, Jie Li, Wei Wang, Jialei Yuan, Dabing Li, Xiaojuan Sun, Yongjin Wang. AlInGaAs Multiple Quantum Well-Integrated Device with Multifunction Light Emission/Detection and Electro-Optic Modulation in the Near-Infrared Range. ACS OMEGA[J]. 2021, 第 7 作者6(12): 8687-8692, https://doaj.org/article/ee21f5736f3342c081920a8bf5f2cc4e.
[35] Jia, Yuping, Shen, Yutong, Sun, Xiaojuan, Shi, Zhiming, Jiang, Ke, Wu, Tong, Liang, Hongwei, Cui, Xingzhu, Lu, Wei, Li, Dabing. Improved performance of SiC radiation detector based on metal-insulator-semiconductor structures. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT[J]. 2021, 第 10 作者  通讯作者  997: http://dx.doi.org/10.1016/j.nima.2021.165166.
[36] Shi, Zhiming, Qi, Zhanbin, Zang, Hang, Jiang, Ke, Chen, Yang, Jia, Yuping, Wu, Tong, Zhang, Shanli, Sun, Xiaojuan, Li, Dabing. Point Defects in Monolayer h-AlN as Candidates for Single-Photon Emission. ACS APPLIED MATERIALS AND INTERFACES[J]. 2021, 第 10 作者  通讯作者  13(31): 37380-37387, 
[37] Wang, Jiaxing, Chu, Chunshuang, Tian, Kangkai, Che, Jiamang, Shao, Hua, Zhang, Yonghui, Jiang, Ke, Zhang, ZiHui, Sun, Xiaojuan, Li, Dabing. Polarization assisted self-powered GaN-based UV photodetector with high responsivity. PHOTONICS RESEARCH[J]. 2021, 第 10 作者9(5): 734-740, http://dx.doi.org/10.1364/PRJ.418813.
[38] Ben, Jianwei, Liu, Xinke, Wang, Cong, Zhang, Yupeng, Shi, Zhiming, Jia, Yuping, Zhang, Shanli, Zhang, Han, Yu, Wenjie, Li, Dabing, Sun, Xiaojuan. 2D III-Nitride Materials: Properties, Growth, and Applications. ADVANCED MATERIALS. 2021, 第 10 作者33(27): http://dx.doi.org/10.1002/adma.202006761.
[39] Jia, Yuping, Sun, Xiaojuan, Shi, Zhiming, Jiang, Ke, Wu, Tong, Liang, Hongwei, Cui, Xingzhu, Lu, Wei, Li, Dabing. Improved performance of SiC radiation detectors due to optimized ohmic contact electrode by graphene insertion. DIAMOND AND RELATED MATERIALS[J]. 2021, 第 9 作者  通讯作者  115: http://dx.doi.org/10.1016/j.diamond.2021.108355.
[40] Zhu, Shijie, Qiu, Pengjiang, Qian, Zeyuan, Shan, Xinyi, Wang, Zhou, Jiang, Ke, Sun, Xiaojuan, Cui, Xugao, Zhang, Guoqi, Li, Dabing, Tian, Pengfei. 2 Gbps free-space ultraviolet-C communication based on a high-bandwidth micro-LED achieved with pre-equalization. OPTICS LETTERS[J]. 2021, 第 10 作者46(9): 2147-2150, http://dx.doi.org/10.1364/OL.423311.
[41] Chen, Yang, Jiang, Ke, Zang, Hang, Ben, Jianwei, Zhang, Shanli, Shi, Zhiming, Jia, Yuping, Lu, Wei, Li, Dabing, Sun, Xiaojuan. Growth of high-quality wafer-scale graphene on dielectric substrate for high-response ultraviolet photodetector. CARBON[J]. 2021, 第 9 作者175: 155-163, http://dx.doi.org/10.1016/j.carbon.2020.12.055.
[42] Guo, Long, Jiang, Ke, Sun, Xiaojuan, Zhang, Zihui, Ben, Jianwei, Jia, Yuping, Wang, Yong, Li, Dabing. Multiple-quantum-well-induced unipolar carrier transport multiplication in AlGaN solar-blind ultraviolet photodiode. PHOTONICS RESEARCH[J]. 2021, 第 8 作者9(10): 1907-1915, http://dx.doi.org/10.1364/PRJ.435937.
[43] Shi, Zhiming, Qi, Zhanbin, Zang, Hang, Jiang, Ke, Chen, Yang, Jia, Yuping, Wu, Tong, Zhang, Shanli, Sun, Xiaojuan, Li, Dabing. Point Defects in Monolayer h-AlN as Candidates for Single-Photon Emission. ACS APPLIED MATERIALS & INTERFACES[J]. 2021, 第 10 作者  通讯作者  13(31): 37370-37377, http://dx.doi.org/10.1021/acsami.1c09175.
[44] Jiang, Ke, Sun, Xiaojuan, Chen, Yuxuan, Zhang, Shanli, Ben, Jianwei, Chen, Yang, Zhang, ZiHui, Jia, Yuping, Shi, Zhiming, Li, Dabing. Three-dimensional metal semiconductor meta bipolar ultraviolet phototransistor based on GaN p-i-n epilayer. APPLIED PHYSICS LETTERS[J]. 2021, 第 10 作者  通讯作者  119(16): 
[45] Chen, Yang, Wu, You, Ben, Jianwei, Jiang, Ke, Jia, Yuping, Zhang, Shanli, Zang, Hang, Shi, Zhiming, Duan, Bin, Sun, Xiaojuan, Li, Dabing. A high-response ultraviolet photodetector by integrating GaN nanoparticles with graphene. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2021, 第 11 作者868: 159281, http://dx.doi.org/10.1016/j.jallcom.2021.159281.
[46] Chen, Yang, Zang, Hang, Jiang, Ke, Ben, Jianwei, Zhang, Shanli, Shi, Zhiming, Jia, Yuping, Lu, Wei, Sun, Xiaojuan, Li, Dabing. Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy (vol 117, 051601, 2020). APPLIED PHYSICS LETTERS. 2020, 第 10 作者  通讯作者  117(9): https://www.webofscience.com/wos/woscc/full-record/WOS:000568861700001.
[47] Liu, Xinke, Wang, HaoYu, Chiu, HsienChin, Chen, Yuxuan, Li, Dabing, Huang, ChongRong, Kao, HsuanLing, Kuo, HaoChung, Chen, SungWen Huang. Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2020, 第 5 作者814: http://dx.doi.org/10.1016/j.jallcom.2019.152293.
[48] Kai, Cuihong, Sun, Xiaojuan, Jia, Yuping, Jiang, Ke, Shi, Zhiming, Ben, Jianwei, Wu, You, Wang, Yong, Li, Dabing. Characterization of carrier transport behavior of specific type dislocations in GaN by light assisted KPFM. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2020, 第 9 作者  通讯作者  53(23): 
[49] Zhou, Xingwei, Liu, Xin, Zhang, Jiahao, Zhang, Cai, Yoo, Seung Jo, Kim, JinGyu, Chu, Xianyu, Song, Chao, Wang, Peng, Zhao, Zhenzhen, Li, Dabing, Zhang, Wei, Zheng, Weitao. Highly -dispersed cobalt clusters decorated onto nitrogen -doped carbon nanotubes as multifunctional electrocatalysts for OER, HER and ORR. CARBON[J]. 2020, 第 11 作者166: 284-290, http://dx.doi.org/10.1016/j.carbon.2020.05.037.
[50] Chen, Yang, Jia, YuPing, Shi, ZhiMing, Sun, XiaoJuan, Li, DaBing. Van der Waals Epitaxy: A new way for growth of III-nitrides. SCIENCE CHINA-TECHNOLOGICAL SCIENCES[J]. 2020, 第 5 作者63(3): 528-530, https://www.webofscience.com/wos/woscc/full-record/WOS:000499958400001.
[51] Jia, Yuping, Shi, Zhiming, Hou, Wantong, Zang, Hang, Jiang, Ke, Chen, Yang, Zhang, Shanli, Qi, Zhanbin, Wu, Tong, Sun, Xiaojuan, Li, Dabing. Elimination of the internal electrostatic field in two-dimensional GaN-based semiconductors. NPJ 2D MATERIALS AND APPLICATIONS[J]. 2020, 第 11 作者  通讯作者  4(1): https://doaj.org/article/ef6627badb1d40bf9af2c56ce4c8aaaa.
[52] Jiang, Ke, Sun, Xiaojuan, Ben, Jianwei, Shi, Zhiming, Jia, Yuping, Chen, Yang, Zhang, Shanli, Wu, Tong, Lu, Wei, Li, Dabing. Suppressing the luminescence of V cation -related point -defect in AlGaN grown by MOCVD on HVPE-AlN. APPLIED SURFACE SCIENCE[J]. 2020, 第 10 作者  通讯作者  520: 146369, http://dx.doi.org/10.1016/j.apsusc.2020.146369.
[53] 贲建伟, 孙晓娟, 蒋科, 陈洋, 石芝铭, 臧行, 张山丽, 黎大兵, 吕威. AlGaN基宽禁带半导体光电材料与器件. 人工晶体学报[J]. 2020, 第 8 作者49(11): 2046-2067, http://lib.cqvip.com/Qikan/Article/Detail?id=7103518501.
[54] 刘博阳, 宋文涛, 刘争晖, 孙晓娟, 王开明, 王亚坤, 张春玉, 陈科蓓, 徐耿钊, 徐科, 黎大兵. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征. 物理学报[J]. 2020, 第 11 作者69(12): 319-327, https://wulixb.iphy.ac.cn/cn/article/doi/10.7498/aps.69.20200099.
[55] Jiang, Ke, Sun, Xiaojuan, Zhang, ZiHui, Ben, Jianwei, Che, Jiamang, Shi, Zhiming, Jia, Yuping, Chen, Yang, Zhang, Shanli, Lv, Wei, Li, Dabing. Polarization-enhanced AlGaN solar-blind ultraviolet detectors. PHOTONICS RESEARCH[J]. 2020, 第 11 作者8(7): 1243-1252, http://lib.cqvip.com/Qikan/Article/Detail?id=7102618646.
[56] Ben, Jianwei, Shi, Zhiming, Zang, Hang, Sun, Xiaojuan, Liu, Xinke, Lu, Wei, Li, Dabing. The formation mechanism of voids in physical vapor deposited AlN epilayer during high temperature annealing. APPLIED PHYSICS LETTERS[J]. 2020, 第 7 作者  通讯作者  116(25): https://www.webofscience.com/wos/woscc/full-record/WOS:000543514800001.
[57] CHEN Yang, JIA YuPing, SHI ZhiMing, SUN XiaoJuan, LI DaBing. Van der Waals epitaxy: A new way for growth of Ⅲ-nitrides. 中国科学:技术科学英文版[J]. 2020, 第 5 作者63(3): 528-530, http://lib.cqvip.com/Qikan/Article/Detail?id=7101120270.
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[113] 王新建, 宋航, 黎大兵, 蒋红, 李志明, 缪国庆, 孙晓娟, 陈一仁, 贾辉. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文). 发光学报[J]. 2012, 第 3 作者33(2): 227-232, http://lib.cqvip.com/Qikan/Article/Detail?id=40878537.
[114] Xiaojuan Sun, Dabing Li, Hang Song, Yiren Chen, Hong Jiang, Guoqing Miao, Zhiming Li. Short-wavelength light beam in situ monitoring growth of InGaN. NANOSCALE RESEARCH LETTERS. 2012, 第 2 作者7(1): 282-282, http://dx.doi.org/10.1186/1556-276X-7-282.
[115] Jia Hui, Chen Yiren, Sun Xiaojuan, Li Dabing, Song Hang, Jiang Hong, Miao Guoqing, Li Zhiming. AlN插入层对a-AlGaN的外延生长的影响(英文). 发光学报[J]. 2012, 第 4 作者33(5): 519-524, http://lib.cqvip.com/Qikan/Article/Detail?id=41980903.
[116] 贾辉, 陈一仁, 孙晓娟, 黎大兵, 宋航, 蒋红, 缪国庆, 李志明. 初始化生长条件对a-GaN中应变的影响. 发光学报[J]. 2012, 第 4 作者33(6): 581-585, https://doi.org/10.3788/fgxb20123306.0581.
[117] 贾辉, 陈一仁, 孙晓娟, 黎大兵, 宋航, 蒋红, 缪国庆, 李志明. SiO2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响. 发光学报[J]. 2012, 第 4 作者33(8): 879-882, https://doi.org/10.3788/fgxb20123308.0879.
[118] 王新建, 宋航, 黎大兵, 蒋红, 李志明, 缪国庆, 陈一仁, 孙晓娟. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文). 发光学报[J]. 2012, 第 3 作者33(10): 1089-1094, http://lib.cqvip.com/Qikan/Article/Detail?id=43609428.
[119] Li, Dabing, Sun, Xiaojuan, Song, Hang, Li, Zhiming, Chen, Yiren, Jiang, Hong, Miao, Guoqing. Realization of a High-Performance GaN UV Detector by Nanoplasmonic Enhancement. ADVANCED MATERIALS[J]. 2012, 第 1 作者  通讯作者  24(6): 845-+, http://ir.ciomp.ac.cn/handle/181722/24636.
[120] 贾辉, 陈一仁, 孙晓娟, 黎大兵, 宋航, 蒋红, 缪国庆, 李志明. AlN插入层对a-AlGaN的外延生长的影响(英文). 发光学报[J]. 2012, 第 4 作者33(5): 519-524, http://lib.cqvip.com/Qikan/Article/Detail?id=41980903.
[121] Jia Hui, Chen Yiren, Sun Xiaojuan, Li Dabing, Song Hang, Jiang Hong, Miao Guoqing, Li Zhiming. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文). 发光学报[J]. 2012, 第 4 作者33(1): 82-87, http://ir.ciomp.ac.cn/handle/181722/28230.
[122] 尤坤, 宋航, 黎大兵, 刘洪波, 李志明, 陈一仁, 蒋红, 孙晓娟, 缪国庆. GaN基MIS紫外探测器的电学及光电特性. 发光学报[J]. 2012, 第 3 作者33(1): 55-61, https://doi.org/10.3788/fgxb20123301.0055.
[123] 王新建, 宋航, 黎大兵, 蒋红, 李志明, 缪国庆, 陈一仁, 孙晓娟. 氮化铝薄膜的硅热扩散掺杂研究. 发光学报[J]. 2012, 第 3 作者33(7): 768-773, http://lib.cqvip.com/Qikan/Article/Detail?id=42719457.
[124] Chen, Yiren, Jiang, Hong, Li, Dabing, Song, Hang, Li, Zhiming, Sun, Xiaojuan, Miao, Guoqing, Zhao, Haifeng. Improved field emission performance of carbon nanotube by introducing copper metallic particles. NANOSCALE RESEARCH LETTERS[J]. 2011, 第 3 作者6(1): 537-537, http://ir.ciomp.ac.cn/handle/181722/4073.
[125] 黎大兵. Influence of threading dislocations on GaN-based metal-semiconductormetal. Applied Physcis Letters. 2011, 第 1 作者
[126] Sun, Xiaojuan, Li, Dabing, Jiang, Hong, Li, Zhiming, Song, Hang, Chen, Yiren, Miao, Guoqing. Improved performance of GaN metal-semiconductor-metal ultraviolet detectors by depositing SiO2 nanoparticles on a GaN surface. APPLIED PHYSICS LETTERS[J]. 2011, 第 2 作者98(12): http://ir.ciomp.ac.cn/handle/181722/26082.
[127] Liu, Xia, Song, Hang, Miao, Guoqing, Jiang, Hong, Cao, Lianzhen, Li, Dabing, Sun, Xiaojuan, Chen, Yiren. Influence of thermal annealing duration of buffer layer on the crystalline quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD. APPLIED SURFACE SCIENCE[J]. 2011, 第 6 作者257(6): 1996-1999, http://dx.doi.org/10.1016/j.apsusc.2010.09.041.
[128] 宋航, 黎大兵, 陈一仁. Influence of threading dislocations on GaN-based metal…. APPLIED PHYSICS LETTERS[J]. 2011, 第 2 作者98(1): 011108-1, http://ir.ciomp.ac.cn/handle/181722/4078.
[129] Liu, Xia, Song, Hang, Miao, Guoqing, Jiang, Hong, Cao, Lianzhen, Sun, Xiaojuan, Li, Dabing, Chen, Yiren, Li, Zhiming. Influence of buffer layer thickness and epilayer's growth temperature on crystalline quality of InAs0.6P0.4/Inp grown by LP-MOCVD. SOLID STATE COMMUNICATIONS[J]. 2011, 第 7 作者151(12): 904-907, http://dx.doi.org/10.1016/j.ssc.2011.03.027.
[130] Shi, K, Liu, X L, Li, D B, Wang, J, Song, H P, Xu, X Q, Wei, H Y, Jiao, C M, Yang, S Y, Song, H, Zhu, Q S, Wang, Z G. Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy. APPLIED SURFACE SCIENCE[J]. 2011, 257(18): 8110-8112, http://dx.doi.org/10.1016/j.apsusc.2011.04.118.
[131] 黎大兵, 宋航, 陈一仁. Improved performance of GaN metal-semiconductor-metal ultraviolet detectors by…. APPLIED PHYSICS LETTERS[J]. 2011, 第 1 作者98(12): 121117-1, http://ir.ciomp.ac.cn/handle/181722/4074.
[132] Li, Dabing, Sun, Xiaojuan, Song, Hang, Li, Zhiming, Jiang, Hong, Chen, Yiren, Miao, Guoqing, Shen, Bo. Effect of asymmetric Schottky barrier on GaN-based metal-semiconductor-metal ultraviolet detector. APPLIED PHYSICS LETTERS[J]. 2011, 第 1 作者  通讯作者  99(26): http://ir.ciomp.ac.cn/handle/181722/4053.
[133] Shi, K, Li, D B, Song, H P, Guo, Y, Wang, J, Xu, X Q, Liu, J M, Yang, A L, Wei, H Y, Zhang, B, Yang, S Y, Liu, X L, Zhu, Q S, Wang, Z G. Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy. NANOSCALE RESEARCH LETTERS[J]. 2011, 6(1): http://ir.semi.ac.cn/handle/172111/21263.
[134] Liu, Xia, Song, Hang, Miao, Guoqing, Jiang, Hong, Cao, Lianzhen, Li, Dabing, Sun, Xiaojuan, Chen, Yiren, Li, Zhiming. Effect of buffer layer annealing temperature on the crystalline quality of In0.82Ga0.18As layers grown by two-step growth method. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2011, 第 6 作者509(24): 6751-6755, http://ir.ciomp.ac.cn/handle/181722/26074.
[135] 黎大兵. Determination of InN/Diamond Heterojunction Band Offset…. NANOSCALE RESEARCH LETTERS[J]. 2011, 第 1 作者6(1): 50, http://ir.ciomp.ac.cn/handle/181722/4049.
[136] Li, Dabing, Sun, Xiaojuan, Song, Hang, Li, Zhiming, Chen, Yiren, Miao, Guoqing, Jiang, Hong. Influence of threading dislocations on GaN-based metal-semiconductor-metal ultraviolet photodetectors. APPLIED PHYSICS LETTERS[J]. 2011, 第 1 作者  通讯作者  98(1): http://ir.ciomp.ac.cn/handle/181722/26053.
[137] LiDaBing, HuWeiGuo, MiyakeHideto, HiramatsuKazumasa, SongHang. Enhanced deep ultraviolet emission from Si-doped AlxGa1-xN/AlN MQWs. Chinese Physics B[J]. 2010, 第 1 作者  通讯作者  19(12): 127801-127801, https://cpb.iphy.ac.cn/EN/10.1088/1674-1056/19/12/127801.
[138] Yu, Shuzhen, Miao, Guoqing, Jin, Yixin, Zhang, Ligong, Song, Hang, Jiang, Hong, Li, Zhiming, Li, Dabing, Sun, Xiaojuan. Growth and optical properties of catalyst-free InP nanowires on Si (100) substrates. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES[J]. 2010, 第 8 作者42(5): 1540-1543, http://ir.ciomp.ac.cn/handle/181722/26178.
[139] Liu, Xia, Jiang, Hong, Miao, Guoqing, Song, Hang, Cao, Lianzhen, Li, Zhiming, Li, Dabing. Effect of epilayer's growth temperature on crystalline quality of InAs0.6P0.4/InP grown by two-step growth method. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2010, 第 7 作者506(2): 530-532, http://ir.ciomp.ac.cn/handle/181722/26156.
[140] 蒋红, 宋航, 赵海峰, 李志明, 黎大兵. 电泳和电镀法增强碳纳米管场发射特性的研究. 真空科学与技术学报[J]. 2010, 第 5 作者64-67, http://lib.cqvip.com/Qikan/Article/Detail?id=32763712.
[141] 缪国庆, 张立功, 宋航, 蒋红, 黎大兵, 李志明, 孙晓娟. Si衬底上InP纳米线的晶体结构和光学性质. 发光学报[J]. 2010, 第 5 作者31(5): 767-772, http://lib.cqvip.com/Qikan/Article/Detail?id=35499542.
[142] 宋航, 蒋红, 缪国庆, 黎大兵, 李志明, 孙晓娟, 陈一仁. 多层GaSb(QDs)/GaAs生长中量子点的聚集及发光特性. 发光学报[J]. 2010, 第 4 作者31(6): 859-863, http://lib.cqvip.com/Qikan/Article/Detail?id=36325789.
[143] Hu, Weiguo, Ma, Bei, Li, Dabing, Miyagawa, Reina, Miyake, Hideto, Hiramatsu, Kazumasa. Effects of the AlN Interlayer on the Distribution and Mobility of Two-Dimensional Electron Gas in AlGaN/AlN/GaN Heterojunctions. JAPANESE JOURNAL OF APPLIED PHYSICS[J]. 2010, 第 3 作者49(3): 035701, http://www.irgrid.ac.cn/handle/1471x/611180.
[144] Cao, Lianzhen, Jiang, Hong, Song, Hang, Li, Zhiming, Liu, Xia, Guo, Wanguo, Yan, Dawei, Sun, Xiaojuan, Zhao, Haifeng, Miao, Guoqing, Li, Dabing. Aloetic-Shaped SiC Nanowires: Synthesis and Field Electron Emission Properties. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY[J]. 2010, 第 11 作者10(3): 2104-2107, http://www.irgrid.ac.cn/handle/1471x/611436.
[145] Hu, Weiguo, Ma, Bei, Li, Dabing, Miyake, Hideto, Hiramatsu, Kazumasa. In-plane electric field induced by polarization and lateral photovoltaic effect in a-plane GaN. APPLIED PHYSICS LETTERS[J]. 2009, 第 3 作者94(23): http://ir.ciomp.ac.cn/handle/181722/26347.
[146] Sun, Xiaojuan, Hu, Lizhong, Song, Hang, Li, Zhiming, Li, Dabing, Jiang, Hong, Miao, Guoqing. Selective wet etching of Al0.7Ga0.3As layer in concentrated HCl solution for peeling off GaAs microtips. SOLID-STATE ELECTRONICS[J]. 2009, 第 5 作者53(9): 1032-1035, http://dx.doi.org/10.1016/j.sse.2009.04.009.
[147] Li, Dabing, Ma, Bei, Miyagawa, Reina, Hu, Weiguo, Narukawa, Mitsuhisa, Miyake, Hideto, Hiramatsu, Kazumasa. Photoluminescence study of Si-doped a-plane GaN grown by MOVPE. JOURNAL OF CRYSTAL GROWTH[J]. 2009, 第 1 作者311(10): 2906-2909, http://dx.doi.org/10.1016/j.jcrysgro.2009.01.041.
[148] Hu, Weiguo, Ma, Bei, Li, Dabing, Narukawa, Mitsuhisa, Miyake, Hideto, Hiramatsu, Kazumasa. Mobility enhancement of 2DEG in MOVPE-grown AlGaN/AlN/GaN HEMT structure using vicinal (0001) sapphire. SUPERLATTICES AND MICROSTRUCTURES[J]. 2009, 第 3 作者46(6): 812-816, http://dx.doi.org/10.1016/j.spmi.2009.09.008.
[149] Yu, Shuzhen, Miao, Guoqing, Jin, Yixin, Zhang, Tiemin, Song, Hang, Jiang, Hong, Li, Zhiming, Li, Dabing, Sun, Xiaojuan. Investigation on growth related aspects of catalyst-free InP nanowires grown by metal organic chemical vapor deposition. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2009, 第 8 作者479(1-2): 832-834, http://ir.ciomp.ac.cn/handle/181722/26322.
[150] Yang Chen, Ke Jiang, Hang Zang, Jianwei Ben, Shanli Zhang, Zhiming Shi, Yuping Jia, Wei L, Dabing Li, Xiaojuan Sun. In situ growth of high-quality wafer-scale graphene on dielectric substrate for high-responsivity ultraviolet photodetector. CARBON. 第 9 作者http://dx.doi.org/10.1016/j.carbon.2020.12.055.

科研活动

   
科研项目
(1) 新型光电子器件与材料,主持,国家级,2014-01--2016-12
(2) 表面等离激元增强AlGaN基深紫外LED研究,主持,国家级,2013-01--2016-12
(3) XXX器件与材料,参与,国家级,2012-01--2014-12
(4) 氮化物半导体激子束缚调控和高密度激子发光机理研究,参与,国家级,2011-01--2015-12

合作情况


目前,与日本、美国等大学和研究机构建立了良好的合作关系。

指导学生

已指导学生

贾辉  博士研究生  070205-凝聚态物理  

孙晓娟  博士研究生  070205-凝聚态物理  

陈一仁  博士研究生  070205-凝聚态物理  

现指导学生

包广宏  硕士研究生  070205-凝聚态物理  

徐昌一  硕士研究生  070205-凝聚态物理  

蒋科  硕士研究生  070205-凝聚态物理  

贲建伟  硕士研究生  070205-凝聚态物理  

刘小桐  博士研究生  070205-凝聚态物理