基本信息
王晓磊 男 硕导 中国科学院微电子研究所
电子邮件： wangxiaolei@ime.ac.cn
通信地址： 北京市朝阳区北土城西路3号
邮政编码：
电子邮件： wangxiaolei@ime.ac.cn
通信地址： 北京市朝阳区北土城西路3号
邮政编码：
研究领域
铁电器件
招生信息
招生专业
080903-微电子学与固体电子学
招生方向
铁电器件
教育背景
2008-09--2013-06 中国科学院大学 博士
2004-09--2008-06 西北工业大学 学士
2004-09--2008-06 西北工业大学 学士
学历
研究生
学位
博士
本科
2004-2008年：西北工业大学，应用物理系
博士
2008-2013年：中国科学院大学
工作经历
2013年7月至今：中国科学院微电子研究所
工作简历
2020-07~现在, 中国科学院微电子研究所, 研究员
2016-01~2020-07,中国科学院微电子研究所, 副研究员
2013-07~2016-01,中国科学院微电子研究所, 助理研究员
2016-01~2020-07,中国科学院微电子研究所, 副研究员
2013-07~2016-01,中国科学院微电子研究所, 助理研究员
教授课程
半导体材料与器件的分析与表征
专利与奖励
专利成果
[1] 段佳辉, 王文武, 项金娟, 马雪丽, 王晓磊, 李永亮. 一种电荷捕获型存储器及其制作方法. CN: CN111463217A, 2020-07-28.
[2] 项金娟, 王晓磊, 高建峰, 李亭亭, 李俊峰, 赵超, 王文武. 一种半导体器件制备方法及制备得到的半导体器件. CN: CN110349915A, 2019-10-18.
[3] 项金娟, 王晓磊, 李亭亭. 半导体器件与其制作方法. CN: CN109599367A, 2019-04-09.
[4] 项金娟, 王晓磊, 李亭亭, 王文武, 赵超. 半导体器件与其制作方法. 中国: CN109599367A, 2019-04-09.
[5] 马雪丽, 王晓磊, 王文武. 一种纳米线结构及其制造方法. CN: CN108470685A, 2018-08-31.
[6] 马雪丽, 王晓磊, 王文武. 一种CMOS纳米线及其制造方法. CN: CN108172546A, 2018-06-15.
[7] 马雪丽, 王晓磊, 王文武. 一种堆叠纳米线及其制造方法. CN: CN108155101A, 2018-06-12.
[8] 项金娟, 王晓磊, 杨红, 刘实, 李俊峰, 王文武, 赵超. 一种基于可变功函数栅极的晶体管器件及其制备方法. CN: CN107039283A, 2017-08-11.
[9] 项金娟, 王晓磊, 杨红, 王文武, 赵超. 一种基于单原子层沉积的金属生长方法. CN: CN106987825A, 2017-07-28.
[10] 韩锴, 王晓磊, 王文武, 杨红, 马雪丽. 一种半导体结构及其制作方法. CN: CN103681801A, 2014-03-26.
[11] 韩锴, 王晓磊, 王文武, 杨红, 马雪丽. 具有双功函数金属栅的互补场效应晶体管及其制造方法. CN: CN103579113A, 2014-02-12.
[12] 韩锴, 王晓磊, 王文武, 杨红, 马雪丽. 一种低功函数金属栅形成方法. CN: CN103545182A, 2014-01-29.
[13] 王文武, 陈世杰, 王晓磊, 韩锴, 陈大鹏. 一种半导体器件及其制造方法. CN: CN102064176B, 2013-03-20.
[14] 王文武, 韩锴, 王晓磊, 马雪丽, 陈大鹏. 一种界面优化的锗基半导体器件及其制造方法. CN: CN102339736A, 2012-02-01.
[15] 王文武, 韩锴, 王晓磊, 马雪丽, 陈大鹏. 一种基于栅极替代工艺的制造半导体器件的方法. CN: CN102339752A, 2012-02-01.
[16] 王文武, 韩锴, 王晓磊, 马雪丽, 陈大鹏. 一种半导体器件及其制造方法. 中国: CN102299156A, 2011-12-28.
[17] 王晓磊. 一种半导体器件及其制造方法. CN: CN102299155A, 2011-12-28.
[18] 王晓磊, 王文武, 韩锴, 陈大鹏. 一种半导体器件的形成方法及其半导体器件. CN: CN102299110A, 2011-12-28.
[19] 王晓磊, 王文武, 陈世杰, 韩锴, 陈大鹏. 一种制作CMOSFETs器件结构的方法. CN: CN102104024A, 2011-06-22.
[20] 王文武, 陈世杰, 王晓磊, 韩锴, 陈大鹏. 一种改善高介电常数栅介质界面特性的方法. CN: CN102044442A, 2011-05-04.
[2] 项金娟, 王晓磊, 高建峰, 李亭亭, 李俊峰, 赵超, 王文武. 一种半导体器件制备方法及制备得到的半导体器件. CN: CN110349915A, 2019-10-18.
[3] 项金娟, 王晓磊, 李亭亭. 半导体器件与其制作方法. CN: CN109599367A, 2019-04-09.
[4] 项金娟, 王晓磊, 李亭亭, 王文武, 赵超. 半导体器件与其制作方法. 中国: CN109599367A, 2019-04-09.
[5] 马雪丽, 王晓磊, 王文武. 一种纳米线结构及其制造方法. CN: CN108470685A, 2018-08-31.
[6] 马雪丽, 王晓磊, 王文武. 一种CMOS纳米线及其制造方法. CN: CN108172546A, 2018-06-15.
[7] 马雪丽, 王晓磊, 王文武. 一种堆叠纳米线及其制造方法. CN: CN108155101A, 2018-06-12.
[8] 项金娟, 王晓磊, 杨红, 刘实, 李俊峰, 王文武, 赵超. 一种基于可变功函数栅极的晶体管器件及其制备方法. CN: CN107039283A, 2017-08-11.
[9] 项金娟, 王晓磊, 杨红, 王文武, 赵超. 一种基于单原子层沉积的金属生长方法. CN: CN106987825A, 2017-07-28.
[10] 韩锴, 王晓磊, 王文武, 杨红, 马雪丽. 一种半导体结构及其制作方法. CN: CN103681801A, 2014-03-26.
[11] 韩锴, 王晓磊, 王文武, 杨红, 马雪丽. 具有双功函数金属栅的互补场效应晶体管及其制造方法. CN: CN103579113A, 2014-02-12.
[12] 韩锴, 王晓磊, 王文武, 杨红, 马雪丽. 一种低功函数金属栅形成方法. CN: CN103545182A, 2014-01-29.
[13] 王文武, 陈世杰, 王晓磊, 韩锴, 陈大鹏. 一种半导体器件及其制造方法. CN: CN102064176B, 2013-03-20.
[14] 王文武, 韩锴, 王晓磊, 马雪丽, 陈大鹏. 一种界面优化的锗基半导体器件及其制造方法. CN: CN102339736A, 2012-02-01.
[15] 王文武, 韩锴, 王晓磊, 马雪丽, 陈大鹏. 一种基于栅极替代工艺的制造半导体器件的方法. CN: CN102339752A, 2012-02-01.
[16] 王文武, 韩锴, 王晓磊, 马雪丽, 陈大鹏. 一种半导体器件及其制造方法. 中国: CN102299156A, 2011-12-28.
[17] 王晓磊. 一种半导体器件及其制造方法. CN: CN102299155A, 2011-12-28.
[18] 王晓磊, 王文武, 韩锴, 陈大鹏. 一种半导体器件的形成方法及其半导体器件. CN: CN102299110A, 2011-12-28.
[19] 王晓磊, 王文武, 陈世杰, 韩锴, 陈大鹏. 一种制作CMOSFETs器件结构的方法. CN: CN102104024A, 2011-06-22.
[20] 王文武, 陈世杰, 王晓磊, 韩锴, 陈大鹏. 一种改善高介电常数栅介质界面特性的方法. CN: CN102044442A, 2011-05-04.
出版信息
发表论文
[1] Chai, Junshuai, Xu, Hao, Xiang, Jinjuan, Zhang, Yuanyuan, Zhao, Shujing, Tian, Fengbin, Duan, Jiahui, Han, Kai, Wang, Xiaolei, Luo, Jun, Wang, Wenwu, Ye, Tianchun. First-principles study of oxygen vacancy defects in orthorhombic Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_2$/Si gate stack. 2022, http://arxiv.org/abs/2204.13864.
[2] Chai, Junshuai, Xu, Hao, Xiang, Jinjuan, Zhang, Yuanyuan, Zhao, Shujing, Tian, Fengbin, Duan, Jiahui, Han, Kai, Wang, Xiaolei, Luo, Jun, Wang, Wenwu, Ye, Tianchun. First-principles study of oxygen vacancy defects in orthorhombic Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_2$/Si gate stack. 2022, http://arxiv.org/abs/2204.13864.
[3] Jia, Xinpei, Xiang, Jinjuan, Xu, Hao, Liu, Wenjun, Wang, Xiaolei, Wang, Wenwu. Depolarization Field in FeFET Considering Minor Loop Operation and Charge Trapping. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2022, 69(5): 2711-2717, http://dx.doi.org/10.1109/TED.2022.3161399.
[4] Jia, Xinpei, Xiang, Jinjuan, Xu, Hao, Liu, Wenjun, Wang, Xiaolei, Wang, Wenwu. Depolarization Field in FeFET Considering Minor Loop Operation and Charge Trapping. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2022, 69(5): 2711-2717, http://dx.doi.org/10.1109/TED.2022.3161399.
[5] Duan, Jiahui, Xu, Hao, Zhao, Shujing, Tian, Fengbin, Xiang, Jinjuan, Han, Kai, Li, Tingting, Wang, Xiaolei, Wang, Wenwu, Ye, Tianchun. Impact of mobility degradation on endurance fatigue of FeFET with TiN/Hf0.5Zr0.5O2/SiOx/Si (MFIS) gate structure. JOURNAL OF APPLIED PHYSICS[J]. 2022, 131(13): [6] Duan, Jiahui, Xu, Hao, Zhao, Shujing, Tian, Fengbin, Xiang, Jinjuan, Han, Kai, Li, Tingting, Wang, Xiaolei, Wang, Wenwu, Ye, Tianchun. Impact of mobility degradation on endurance fatigue of FeFET with TiN/Hf0.5Zr0.5O2/SiOx/Si (MFIS) gate structure. JOURNAL OF APPLIED PHYSICS[J]. 2022, 131(13): [7] Zhao, Shujing, Tian, Fengbin, Xu, Hao, Xiang, Jinjuan, Li, Tingting, Chai, Junshuai, Duan, Jiahui, Han, Kai, Wang, Xiaolei, Wang, Wenwu, Ye, Tianchun. Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO2/Si (MFIS) Gate Structure. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2022, 69(3): 1561-1567, http://dx.doi.org/10.1109/TED.2021.3139285.
[8] Zhao, Shujing, Tian, Fengbin, Xu, Hao, Xiang, Jinjuan, Li, Tingting, Chai, Junshuai, Duan, Jiahui, Han, Kai, Wang, Xiaolei, Wang, Wenwu, Ye, Tianchun. Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO2/Si (MFIS) Gate Structure. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2022, 69(3): 1561-1567, http://dx.doi.org/10.1109/TED.2021.3139285.
[9] Sun, Xiaoqing, Zhang, Yuanyuan, Xiang, Jinjuan, Han, Kai, Wang, Xiaolei, Wang, Wenwu, Ye, Tianchun. The Effect of Interface Traps at the Si/SiO2 Interface on the Transient Negative Capacitance of Ferroelectric FETs. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2021, 68(9): 4735-4740, http://dx.doi.org/10.1109/TED.2021.3097008.
[10] Sun, Xiaoqing, Zhang, Yuanyuan, Xiang, Jinjuan, Han, Kai, Wang, Xiaolei, Wang, Wenwu, Ye, Tianchun. The Effect of Interface Traps at the Si/SiO2 Interface on the Transient Negative Capacitance of Ferroelectric FETs. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2021, 68(9): 4735-4740, http://dx.doi.org/10.1109/TED.2021.3097008.
[11] Zhao, Shujing, Tian, Fengbin, Xu, Hao, Xiang, Jinjuan, Li, Tingting, Chai, Junshuai, Duan, Jiahui, Han, Kai, Wang, Xiaolei, Wang, Wenwu, Ye, Tianchun. Experimental Extraction and Simulation of Charge Trapping during Endurance of FeFET with TiN/HfZrO/SiO2/Si (MFIS) Gate Structure. 2021, http://arxiv.org/abs/2106.15939.
[12] Zhao, Shujing, Tian, Fengbin, Xu, Hao, Xiang, Jinjuan, Li, Tingting, Chai, Junshuai, Duan, Jiahui, Han, Kai, Wang, Xiaolei, Wang, Wenwu, Ye, Tianchun. Experimental Extraction and Simulation of Charge Trapping during Endurance of FeFET with TiN/HfZrO/SiO2/Si (MFIS) Gate Structure. 2021, http://arxiv.org/abs/2106.15939.
[13] Zhang, Yuanyuan, Sun, Xiaoqing, Chai, Junshuai, Xu, Hao, Ma, Xueli, Xiang, Jinjuan, Han, Kai, Wang, Xiaolei, Wang, Wenwu, Ye, Tianchun. Thermodynamic driving force of transient negative capacitance of ferroelectric capacitors. APPLIED PHYSICS LETTERS[J]. 2021, 119(2): http://dx.doi.org/10.1063/5.0039246.
[14] Zhang, Yuanyuan, Sun, Xiaoqing, Chai, Junshuai, Xu, Hao, Ma, Xueli, Xiang, Jinjuan, Han, Kai, Wang, Xiaolei, Wang, Wenwu, Ye, Tianchun. Thermodynamic driving force of transient negative capacitance of ferroelectric capacitors. APPLIED PHYSICS LETTERS[J]. 2021, 119(2): http://dx.doi.org/10.1063/5.0039246.
[15] Zhang, Yuanyuan, Ma, Xueli, Wang, Xiaolei, Han, Kai, Xiang, Jinjuan, Wang, Wenwu. On the applicability of Gibbs free energy landscape to the definition and understanding of transient negative capacitance in a ferroelectric capacitor. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2020, 53(45): http://dx.doi.org/10.1088/1361-6463/aba70e.
[16] Zhang, Yuanyuan, Ma, Xueli, Wang, Xiaolei, Han, Kai, Xiang, Jinjuan, Wang, Wenwu. On the applicability of Gibbs free energy landscape to the definition and understanding of transient negative capacitance in a ferroelectric capacitor. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2020, 53(45): http://dx.doi.org/10.1088/1361-6463/aba70e.
[17] Wang, Xiaolei, Sun, Xiaoqing, Zhang, Yuanyuan, Zhou, Lixing, Xiang, Jinjuan, Ma, Xueli, Yang, Hong, Li, Yongliang, Han, Kai, Luo, Jun, Zhao, Chao, Wang, Wenwu. Impact of Charges at Ferroelectric/Interlayer Interface on Depolarization Field of Ferroelectric FET With Metal/Ferroelectric/Interlayer/Si Gate-Stack. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2020, 67(10): 4500-4506, https://www.webofscience.com/wos/woscc/full-record/WOS:000572635400090.
[18] Wang, Xiaolei, Sun, Xiaoqing, Zhang, Yuanyuan, Zhou, Lixing, Xiang, Jinjuan, Ma, Xueli, Yang, Hong, Li, Yongliang, Han, Kai, Luo, Jun, Zhao, Chao, Wang, Wenwu. Impact of Charges at Ferroelectric/Interlayer Interface on Depolarization Field of Ferroelectric FET With Metal/Ferroelectric/Interlayer/Si Gate-Stack. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2020, 67(10): 4500-4506, https://www.webofscience.com/wos/woscc/full-record/WOS:000572635400090.
[19] Duan, Jiahui, Xiang, Jinjuan, Zhou, Lixing, Wang, Xiaolei, Ma, Xueli, Wang, Wenwu. Electron mobility in silicon nanowires using nonlinear surface roughness scattering model. JAPANESE JOURNAL OF APPLIED PHYSICS[J]. 2020, 59(3): https://www.webofscience.com/wos/woscc/full-record/WOS:000518948000001.
[20] Duan, Jiahui, Xiang, Jinjuan, Zhou, Lixing, Wang, Xiaolei, Ma, Xueli, Wang, Wenwu. Electron mobility in silicon nanowires using nonlinear surface roughness scattering model. JAPANESE JOURNAL OF APPLIED PHYSICS[J]. 2020, 59(3): https://www.webofscience.com/wos/woscc/full-record/WOS:000518948000001.
[21] Ma, Xueli, Zhou, Lixing, Xiang, Jinjuan, Yang, Hong, Wang, Xiaolei, Li, Yongliang, Zhang, Jing, Zhao, Chao, Yin, Huaxiang, Wang, Wenwu, Ye, Tianchun. Identification of a suitable passivation route for high-k/SiGe interface based on ozone oxidation. APPLIED SURFACE SCIENCE[J]. 2019, 493: 478-484, http://dx.doi.org/10.1016/j.apsusc.2019.07.050.
[22] Ma, Xueli, Zhou, Lixing, Xiang, Jinjuan, Yang, Hong, Wang, Xiaolei, Li, Yongliang, Zhang, Jing, Zhao, Chao, Yin, Huaxiang, Wang, Wenwu, Ye, Tianchun. Identification of a suitable passivation route for high-k/SiGe interface based on ozone oxidation. APPLIED SURFACE SCIENCE[J]. 2019, 493: 478-484, http://dx.doi.org/10.1016/j.apsusc.2019.07.050.
[23] Zhou, Lixing, Wang, Xiaolei, Han, Kai, Ma, Xueli, Wang, Yanrong, Xiang, Jinjuan, Yang, Hong, Zhang, Jing, Zhao, Chao, Ye, Tianchun, Wang, Wenwu. Experimental Investigation of Remote Coulomb Scattering on Mobility Degradation of Ge pMOSFET by Various PDA Ambiences. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2019, 66(4): 1669-1674, [24] Zhou, Lixing, Wang, Xiaolei, Han, Kai, Ma, Xueli, Wang, Yanrong, Xiang, Jinjuan, Yang, Hong, Zhang, Jing, Zhao, Chao, Ye, Tianchun, Wang, Wenwu. Experimental Investigation of Remote Coulomb Scattering on Mobility Degradation of Ge pMOSFET by Various PDA Ambiences. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2019, 66(4): 1669-1674, [25] Zhou, Lixing, Wang, Xiaolei, Ma, Xueli, Han, Kai, Wang, Yanrong, Xiang, Jinjuan, Yang, Hong, Zhang, Jing, Zhao, Chao, Ye, Tianchun, Wang, Wenwu. Comprehensive investigation of the interfacial charges and dipole in GeOx/AL(2)O(3) gate stacks of Ge MOS capacitor by postdeposition annealing. JAPANESE JOURNAL OF APPLIED PHYSICS[J]. 2018, 57(10): https://www.webofscience.com/wos/woscc/full-record/WOS:000445003200001.
[26] Zhou, Lixing, Wang, Xiaolei, Ma, Xueli, Han, Kai, Wang, Yanrong, Xiang, Jinjuan, Yang, Hong, Zhang, Jing, Zhao, Chao, Ye, Tianchun, Wang, Wenwu. Comprehensive investigation of the interfacial charges and dipole in GeOx/AL(2)O(3) gate stacks of Ge MOS capacitor by postdeposition annealing. JAPANESE JOURNAL OF APPLIED PHYSICS[J]. 2018, 57(10): https://www.webofscience.com/wos/woscc/full-record/WOS:000445003200001.
[27] Zhou, Lixing, Wang, Xiaolei, Ma, Xueli, Han, Kai, Wang, Yanrong, Xiang, Jinjuan, Yang, Hong, Zhang, Jing, Zhao, Chao, Ye, Tianchun, Wang, Wenwu. Identification of interfacial defects in a Ge gate stack based on ozone passivation. SEMICONDUCTOR SCIENCE AND TECHNOLOGY[J]. 2018, 33(11): https://www.webofscience.com/wos/woscc/full-record/WOS:000446824200002.
[28] Zhou, Lixing, Wang, Xiaolei, Ma, Xueli, Han, Kai, Wang, Yanrong, Xiang, Jinjuan, Yang, Hong, Zhang, Jing, Zhao, Chao, Ye, Tianchun, Wang, Wenwu. Identification of interfacial defects in a Ge gate stack based on ozone passivation. SEMICONDUCTOR SCIENCE AND TECHNOLOGY[J]. 2018, 33(11): https://www.webofscience.com/wos/woscc/full-record/WOS:000446824200002.
[29] Zhou, Lixing, Wang, Xiaolei, Han, Kai, Ma, Xueli, Wang, Yanrong, Xiang, Jinjuan, Yang, Hong, Zhang, Jing, Zhao, Chao, Ye, Tianchun, Radamson, Henry H, Wang, Wenwu. Understanding dipole formation at dielectric/dielectric hetero-interface. APPLIED PHYSICS LETTERS[J]. 2018, 113(18): https://www.webofscience.com/wos/woscc/full-record/WOS:000449146400006.
[30] Zhou, Lixing, Wang, Xiaolei, Han, Kai, Ma, Xueli, Wang, Yanrong, Xiang, Jinjuan, Yang, Hong, Zhang, Jing, Zhao, Chao, Ye, Tianchun, Radamson, Henry H, Wang, Wenwu. Understanding dipole formation at dielectric/dielectric hetero-interface. APPLIED PHYSICS LETTERS[J]. 2018, 113(18): https://www.webofscience.com/wos/woscc/full-record/WOS:000449146400006.
[31] Zhou, Lixing, Wang, Xiaolei, Ma, Xueli, Xiang, Jinjuan, Yang, Hong, Zhao, Chao, Ye, Tianchun, Wang, Wenwu. Hole mobility degradation by remote Coulomb scattering and charge distribution in Al2O3/GeOx gate stacks in bulk Ge pMOSFET with GeOx grown by ozone oxidation. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2017, 50(24): https://www.webofscience.com/wos/woscc/full-record/WOS:000402368700002.
[32] Zhou, Lixing, Wang, Xiaolei, Ma, Xueli, Xiang, Jinjuan, Yang, Hong, Zhao, Chao, Ye, Tianchun, Wang, Wenwu. Hole mobility degradation by remote Coulomb scattering and charge distribution in Al2O3/GeOx gate stacks in bulk Ge pMOSFET with GeOx grown by ozone oxidation. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2017, 50(24): https://www.webofscience.com/wos/woscc/full-record/WOS:000402368700002.
[33] Xiang, Jinjuan, Wang, Xiaolei, Li, Tingting, Gao, Jianfeng, Han, Kai, Yu, Jiahan, Wang, Wenwu, Li, Junfeng, Zhao, Chao. Investigation of Thermal Atomic Layer Deposited TaAlC with Low Effective Work-Function on HfO2 Dielectric Using TaCl5 and TEA as Precursors. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY[J]. 2017, 6(1): P38-P41, http://dx.doi.org/10.1149/2.0141701jss.
[34] Xiang, Jinjuan, Wang, Xiaolei, Li, Tingting, Gao, Jianfeng, Han, Kai, Yu, Jiahan, Wang, Wenwu, Li, Junfeng, Zhao, Chao. Investigation of Thermal Atomic Layer Deposited TaAlC with Low Effective Work-Function on HfO2 Dielectric Using TaCl5 and TEA as Precursors. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY[J]. 2017, 6(1): P38-P41, http://dx.doi.org/10.1149/2.0141701jss.
[35] Zhang, Jing, Wei, Shuhua, Wang, Xiaolei, Xiang, Jinjuan, Wang, Wenwu. Experimental estimation of charge neutrality level of SiO2. APPLIED SURFACE SCIENCE[J]. 2017, 422: 690-695, http://dx.doi.org/10.1016/j.apsusc.2017.06.078.
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[43] Wang, Xiaolei, Xiang, Jinjuan, Wang, Shengkai, Wang, Wenwu, Zhao, Chao, Ye, Tianchun, Xiong, Yuhua, Zhang, Jing. Remote interfacial dipole scattering and electron mobility degradation in Ge field-effect transistors with GeOx/Al2O3 gate dielectrics. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2016, 49(25): https://www.webofscience.com/wos/woscc/full-record/WOS:000378089600010.
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[47] Wang, Xiaolei, Xiang, Jinjuan, Wang, Wenwu, Xiong, Yuhua, Zhang, Jing, Zhao, Chao. Investigation on the dominant key to achieve superior Ge surface passivation by GeOx based on the ozone oxidation. APPLIED SURFACE SCIENCE[J]. 2015, 357: 1857-1862, http://dx.doi.org/10.1016/j.apsusc.2015.09.084.
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[49] 王文武. A possible origin of core-level shifts in SiO2/Si stacks. Appl. Phys. Lett.. 2013, [50] 王文武. A possible origin of core-level shifts in SiO2/Si stacks. Appl. Phys. Lett.. 2013, [51] Wang, Xiaolei, Xiang, Jinjuan, Wang, Wenwu, Zhang, Jing, Han, Kai, Yang, Hong, Ma, Xueli, Zhao, Chao, Chen, Dapeng, Ye, Tianchun. Reexamination of band offset transitivity employing oxide heterojunctions. APPLIED PHYSICS LETTERS[J]. 2013, 102(3): http://www.irgrid.ac.cn/handle/1471x/1091020.
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科研活动
科研项目
（ 1 ） 金属/界面层/n型锗结构中的固定电荷和界面偶极子对其接触电阻的调制效果和机理的研究, 主持, 国家级, 2015-01--2018-12
（ 2 ） 中国科学院青年创新促进会, 主持, 部委级, 2014-01--2017-12
（ 3 ） 高k金属栅的阈值调控, 主持, 国家级, 2019-01--2020-12
（ 4 ） Ge基器件的远程库伦散射机制的研究, 参与, 国家级, 2017-01--2020-12
（ 5 ） 铁电存储器阵列, 参与, 省级, 2021-03--2022-12
（ 6 ） 基于铁电/介电界面电荷技术调控HfO2基铁电晶体管的退极化电场的方法研究, 主持, 研究所（学校）, 2020-07--2021-12
（ 2 ） 中国科学院青年创新促进会, 主持, 部委级, 2014-01--2017-12
（ 3 ） 高k金属栅的阈值调控, 主持, 国家级, 2019-01--2020-12
（ 4 ） Ge基器件的远程库伦散射机制的研究, 参与, 国家级, 2017-01--2020-12
（ 5 ） 铁电存储器阵列, 参与, 省级, 2021-03--2022-12
（ 6 ） 基于铁电/介电界面电荷技术调控HfO2基铁电晶体管的退极化电场的方法研究, 主持, 研究所（学校）, 2020-07--2021-12
指导学生
已指导学生
代钢 硕士研究生 085208-电子与通信工程
现指导学生
赵淑景 硕士研究生 085209-集成电路工程
邵宪周 硕士研究生 080903-微电子学与固体电子学
徐双双 硕士研究生 085400-电子信息
赵园园 硕士研究生 085400-电子信息
丁雅静 硕士研究生 085400-电子信息