相变存储器材料、器件、纳米工艺与芯片三维集成

优先考虑微电子、半导体、集成电路科学、物理、材料类背景；勤勉务实，具有独立思考、自主学习能力，良好的中英文沟通、表达能力，有实践动手经历，对科研热情专注，有探索精神和强烈的好奇心。

080903-微电子学与固体电子学

相变存储材料与器件
存储芯片集成工艺
新型信息存储器件与前沿应用

2009-09--2014-07   中国科学院大学   工学博士
2005-09--2009-07   华东师范大学   理学学士

2020-09~现在, 中国科学院上海微系统与信息技术研究所, 研究员
2017-08~2020-07,德国马普学会微结构物理研究所, 博士后
2014-07~2017-07,新加坡科技设计大学, 博士后

   

（1） 中国科学院杰出科技成就奖, , 部委级, 2022
（2） 全国颠覆性技术创新大赛总决赛优胜奖, , 部委级, 2022
（3） 上海市浦江（A类）人才计划, 省级, 2021
（4） 国家海外高层次人才, , 国家级, 2021
（5） 上海市海外高层次人才, , 省级, 2021
（6） 上海市优秀博士论文, 省级, 2016
（7） UCAS-BHP BILLITON SCHOLARSHIP, 部委级, 2013

[1] 周夕淋, 方文成, 宋志棠, 闻明, 谭志龙, 宋三年. 一种三维相变存储器及其制备方法. CN: CN115955843A, 2023-04-11.
[2] 李程兴, 周夕淋, 刘卫丽, 宋志棠. 一种高密度相变存储器的制备方法. CN: CN115275001A, 2022-11-01.
[3] 李程兴, 周夕淋, 刘卫丽. 一种高密度相变存储器的制备方法. CN115275001A, 2022-06-28.
[4] 周夕淋, 朱栩旭, 宋志棠, 宋三年. 一种界面相变存储材料、相变存储器及其制备方法. CN: CN115000296A, 2022-09-02.
[5] 周夕淋, 郑加, 宋志棠, 宋三年. 一种高密度相变存储材料、相变存储器及其制备方法. CN: CN114709330A, 2022-07-05.
[6] 周夕淋, 宋志棠, 吴良才, 饶峰. 一种相变存储器单元及其制备方法. CN: CN112635667A, 2021-04-09.
[7] 宋志棠, 吴良才, 纪兴龙, 朱敏, 孟云, 曹良良, 周夕淋, 任堃, 封松林. 一种存储器及其制作方法. CN: CN105322090A, 2016-02-10.
[8] 宋志棠, 吴良才, 周夕淋, 吕士龙. 一种高速低功耗相变存储器单元及其制备方法. CN: CN103531710A, 2014-01-22.
[9] 周夕淋, 宋志棠, 吴良才. 一种相变存储器单元及其制备方法. CN: CN102832340B, 2015-05-13.
[10] 朱敏, 吴良才, 宋志棠, 饶峰, 彭程, 周夕淋, 任堃, 封松林. 一种Sb-Te-Ti相变存储材料及Ti-Sb 2 Te 3 相变存储材料. CN: CN102593355A, 2012-07-18.
[11] 朱敏, 吴良才, 宋志棠, 饶峰, 彭程, 周夕淋, 任堃, 封松林. 一种Ti-Sb 2 Te 3 相变存储材料. CN: CN102593355B, 2013-11-27.
[12] 彭程, 吴良才, 饶峰, 宋志棠, 周夕淋, 朱敏, 刘波. 用于高温环境的N-Ge-Te相变存储材料及制备方法. CN: CN102623632A, 2012-08-01.
[13] 周夕淋, 吴良才, 宋志棠, 饶峰, 彭程, 朱敏. 用于相变存储器的Si-Sb-Te基硫族化合物相变材料. CN: CN102610745A, 2012-07-25.
[14] 饶峰, 宋志棠, 吴良才, 任堃, 周夕淋. 用于相变存储器的Si-Sb-Te材料. CN: CN102130298A, 2011-07-20.
[15] 彭程, 吴良才, 饶峰, 宋志棠, 刘波, 周夕淋, 朱敏. 用于相变存储器的Al-Sb-Te系列相变材料及其制备方法. CN: CN102134698A, 2011-07-27.
[16] 吴良才, 倪鹤南, 宋志棠, 周夕淋, 饶峰. 一种电阻式随机存取存储器及其制造方法. CN: CN102254927A, 2011-11-23.
[17] 周夕淋, 吴良才, 宋志棠, 饶峰. 用于相变存储器的富锑Si-Sb-Te硫族化合物相变材料. CN: CN101924180A, 2010-12-22.

   

[1] Mengyu Zhang, Ruobing Wang, Xixi Zou, Sannian Song, Yun Bao, Liangcai Wu, Zhitang Song, Xilin Zhou. Understanding the microstructure evolution of carbon-doped Sb2Te3 phase change material for high thermal stability memory application. Applied Physics Letters[J]. 2024, 第 8 作者  通讯作者  
[2] Wencheng Fang, Jia Zheng, Jiarui Zhang, Chengxing Li, Ruobing Wang, Sannian Song, Xi Li, Zhitang Song, Xilin Zhou. 300mm integration of a scalable phase change material spacer by inductively coupled plasma etching. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING[J]. 2023, 第 9 作者  通讯作者  164: http://dx.doi.org/10.1016/j.mssp.2023.107591.
[3] Jiarui Zhang, Wencheng Fang, Ruobing Wang, Chengxing Li, Jia Zheng, Xixi Zou, Sannian Song, Zhitang Song, Xilin Zhou. Nanoscale Phase Change Material Array by Sub-Resolution Assist Feature for Storage Class Memory Application. NANOMATERIALS[J]. 2023, 第 9 作者  通讯作者  13(6): https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10059855/.
[4] Zheng, Jia, Fang, Wencheng, Li, Chengxing, Liu, Weili, Song, Sannian, Song, Zhitang, Zhou, Xilin. The effect of slurry pH on the chemical mechanical planarization of a carbon-doped Ge2Sb2Te5 phase change material. JOURNAL OF MATERIALS CHEMISTRY C[J]. 2022, 第 7 作者  通讯作者  10(44): 16739-16750, 
[5] Yicheng Guan, Xilin Zhou, Fan Li, Tianping Ma, SeeHun Yang, Stuart S P Parkin. Ionitronic manipulation of current-induced domain wall motion in synthetic antiferromagnets. NATURE COMMUNICATIONS[J]. 2021, 第 2 作者12(1): http://dx.doi.org/10.1038/s41467-021-25292-1.
[6] Behera, Jitendra K, Zhou, Xilin, Tai, Bo, Simpson, Robert E. Design of c-Axis-Oriented Pnictogen Chalcogenides. ACS APPLIED ELECTRONIC MATERIALS[J]. 2021, 第 2 作者  通讯作者  3(7): 3114-3122, http://dx.doi.org/10.1021/acsaelm.1c00340.
[7] Guan, Yicheng, Zhou, Xilin, Ma, Tianping, Blaesing, Robin, Deniz, Hakan, Yang, SeeHun, Parkin, Stuart S P. Increased Efficiency of Current-Induced Motion of Chiral Domain Walls by Interface Engineering. ADVANCED MATERIALS. 2021, 第 2 作者33(10): https://www.doi.org/10.1002/adma.202007991.
[8] Jeon, KunRok, Jeon, JaeChun, Zhou, Xilin, Migliorini, Andrea, Yoon, Jiho, Parkin, Stuart S P. Giant Transition-State Quasiparticle Spin-Hall Effect in an Exchange-Spin-Split Superconductor Detected by Nonlocal Magnon Spin Transport. ACS NANO[J]. 2020, 第 3 作者14(11): 15874-15883, https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7735746/.
[9] Behera, Jitendra K, Wang, WeiJie, Zhou, Xilin, Guan, Shan, Weikang, Wu, Shengyuan, Yang A, Simpson, Robert E. Resistance modulation in Ge2Sb2Te5. Journal of Materials Sciences and Technology[J]. 2020, 第 3 作者50: 171-177, https://www.jmst.org/EN/10.1016/j.jmst.2020.03.016.
[10] Dong, Weiling, Liu, Hailong, Behera, Jitendra K, Lu, Li, Ng, Ray J H, Sreekanth, Kandammathe Valiyaveedu, Zhou, Xilin, Yang, Joel K W, Simpson, Robert E. Wide Bandgap Phase Change Material Tuned Visible Photonics. ADVANCED FUNCTIONAL MATERIALS[J]. 2019, 第 7 作者29(6): http://dx.doi.org/10.1002/adfm.201806181.
[11] Behera, Jitendra K, Zhou, Xilin, Ranjan, Alok, Simpson, Robert E. Sb2Te3 and Its Superlattices: Optimization by Statistical Design. ACS APPLIED MATERIALS & INTERFACES[J]. 2018, 第 2 作者10(17): 15040-15050, https://www.webofscience.com/wos/woscc/full-record/WOS:000431723400088.
[12] Dong, Weiling, Qiu, Yimei, Zhou, Xilin, Banas, Agnieszka, Banas, Krzysztof, Breese, Mark B H, Cao, Tun, Simpson, Robert E. Tunable Mid-Infrared Phase-Change Metasurface. ADVANCED OPTICAL MATERIALS[J]. 2018, 第 3 作者6(14): https://www.webofscience.com/wos/woscc/full-record/WOS:000439490700002.
[13] Li, Chao, Hu, Chaoquan, Wang, Jianbo, Yu, Xiao, Yang, Zhongbo, Liu, Jian, Li, Yuankai, Bi, Chaobin, Zhou, Xilin, Zheng, Weitao. Understanding phase-change materials with unexpectedly low resistance drift for phase-change memories. JOURNAL OF MATERIALS CHEMISTRY C[J]. 2018, 第 9 作者  通讯作者  6(13): 3387-3394, https://www.webofscience.com/wos/woscc/full-record/WOS:000431290600026.
[14] Cao, Tun, Zhang, Xinyu, Dong, Weiling, Lu, Li, Zhou, Xilin, Zhuang, Xin, Deng, Junhong, Cheng, Xing, Li, Guixin, Simpson, Robert E. Tuneable Thermal Emission Using Chalcogenide Metasurface. ADVANCED OPTICAL MATERIALS[J]. 2018, 第 5 作者6(16): https://www.webofscience.com/wos/woscc/full-record/WOS:000442207500006.
[15] Zhou, Xilin, Behera, Jitendra K, Lv, Shilong, Wu, Liangcai, Song, Zhitang, Simpson, Robert E. Avalanche atomic switching in strain engineered Sb2Te3-GeTe interfacial phase-change memory cells. NANO FUTURES[J]. 2017, 第 1 作者  通讯作者  1(2): https://www.webofscience.com/wos/woscc/full-record/WOS:000458233400006.
[16] Behera, Jitendra K, Zhou, Xilin, Tominaga, Junji, Simpson, Robert E. Laser switching and characterisation of chalcogenides: systems, measurements, and applicability to photonics Invited. OPTICAL MATERIALS EXPRESS[J]. 2017, 第 2 作者7(10): 3741-3759, https://www.webofscience.com/wos/woscc/full-record/WOS:000412046800029.
[17] Zhou, Xilin, Kalikka, Janne, Ji, Xinglong, Wu, Liangcai, Song, Zhitang, Simpson, Robert E. Phase-Change Memory Materials by Design: A Strain Engineering Approach. ADVANCED MATERIALS[J]. 2016, 第 1 作者  通讯作者  28(15): 3007-3016, https://www.webofscience.com/wos/woscc/full-record/WOS:000374336700021.
[18] Kalikka, Janne, Zhou, Xilin, Behera, Jitendra, Nannicini, Giacomo, Simpson, Robert E. Evolutionary design of interfacial phase change van der Waals heterostructures. NANOSCALE[J]. 2016, 第 2 作者8(42): 18212-18220, https://www.webofscience.com/wos/woscc/full-record/WOS:000387427400025.
[19] Zhou, Xilin, Du, Yonghua, Behera, Jitendra K, Wu, Liangcai, Songs, Zhitang, Simpson, Robert E. Oxygen Tuned Local Structure and Phase-Change Performance of Germanium Telluride. ACS APPLIED MATERIALS & INTERFACES[J]. 2016, 第 1 作者  通讯作者  8(31): 20185-20191, 
[20] 吴良才, 宋志棠, 周夕淋, 饶峰, 封松林. 相变存储器材料研究. 中国科学. 物理学, 力学, 天文学[J]. 2016, 第 3 作者46(10): 107309-1, https://www.sciengine.com/doi/10.1360/SSPMA2016-00216.
[21] Kalikka, Janne, Zhou, Xilin, Dilcher, Eric, Wall, Simon, Li, Ju, Simpson, Robert E. Strain-engineered diffusive atomic switching in two-dimensional crystals. NATURE COMMUNICATIONS[J]. 2016, 第 2 作者7(1): https://doaj.org/article/70e7cb50a1674a8cba79f84b584759c4.
[22] Meng, Yun, Zhou, Xilin, Han, Peigao, Song, Zhitang, Wu, Liangcai, Zhu, Chengqiu, Guo, Wenjing, Xu, Ling, Ma, Zhongyuan, Song, Lianke. Study on WSb3Te material for phase-change memory applications. APPLIED SURFACE SCIENCE[J]. 2015, 第 2 作者355: 667-671, http://dx.doi.org/10.1016/j.apsusc.2015.07.069.
[23] Zhou, Xilin, Dong, Weiling, Zhang, Hao, Simpson, Robert E. A zero density change phase change memory material: GeTe-O structural characteristics upon crystallisation. SCIENTIFIC REPORTS[J]. 2015, 第 1 作者5: https://www.webofscience.com/wos/woscc/full-record/WOS:000356097800001.
[24] Wang, Yuchan, Chen, Xiaogang, Cheng, Yan, Zhou, Xilin, Lv, Shilong, Chen, Yifeng, Wang, Yueqing, Zhou, Mi, Chen, Houpeng, Zhang, Yiyun, Song, Zhitang, Feng, Gaoming. RESET Distribution Improvement of Phase Change Memory: The Impact of Pre-Programming. IEEE ELECTRON DEVICE LETTERS[J]. 2014, 第 4 作者35(5): 536-538, https://www.webofscience.com/wos/woscc/full-record/WOS:000335147600012.
[25] Zhou, Xilin, Xia, Mengjiao, Rao, Feng, Wu, Liangcai, Li, Xianbin, Song, Zhitang, Feng, Songlin, Sun, Hongbo. Understanding Phase-Change Behaviors of Carbon-Doped Ge2Sb2Te5 for Phase-Change Memory Application. ACS APPLIED MATERIALS & INTERFACES[J]. 2014, 第 1 作者6(16): 14207-14214, https://www.webofscience.com/wos/woscc/full-record/WOS:000341122000107.
[26] Zhou, Wangyang, Wu, Liangcai, Zhou, Xilin, Rao, Feng, Song, Zhitang, Yao, Dongning, Yin, Weijun, Song, Sannian, Liu, Bo, Qian, Bo, Feng, Songlin. High thermal stability and low density variation of carbon-doped Ge2Sb2Te5 for phase-change memory application. APPLIED PHYSICS LETTERS[J]. 2014, 第 3 作者105(24): https://www.webofscience.com/wos/woscc/full-record/WOS:000346643600069.
[27] Zhou, Xilin, Wu, Liangcai, Song, Zhitang, Cheng, Yan, Rao, Feng, Ren, Kun, Song, Sannian, Liu, Bo, Feng, Songlin. Nitrogen-doped Sb-rich Si-Sb-Te phase-change material for high-performance phase-change memory. ACTA MATERIALIA[J]. 2013, 第 1 作者61(19): 7324-7333, https://www.webofscience.com/wos/woscc/full-record/WOS:000327683700026.
[28] 谷立新, 周夕淋, 张斌, 张滔, 刘显强, 韩晓东, 吴良才, 宋志棠, 张泽. Sb含量对GeTe-Sb相变薄膜电学性能和微观结构的影响. 电子显微学报[J]. 2013, 第 2 作者32(3): 192-197, http://lib.cqvip.com/Qikan/Article/Detail?id=46582392.
[29] Peng, Cheng, Wu, Liangcai, Rao, Feng, Song, Zhitang, Lv, Shilong, Zhou, Xilin, Du, Xiaofeng, Cheng, Yan, Yang, Pingxiong, Chu, Junhao. A simple method used to evaluate phase-change materials based on focused-ion beam technique. APPLIED PHYSICS LETTERS[J]. 2013, 第 6 作者102(20): https://www.webofscience.com/wos/woscc/full-record/WOS:000320619300096.
[30] Zhou, Xilin, Wu, Liangcai, Song, Zhitang, Rao, Feng, Ren, Kun, Peng, Cheng, Song, Sannian, Liu, Bo, Xu, Ling, Feng, Songlin. Phase transition characteristics of Al-Sb phase change materials for phase change memory application. APPLIED PHYSICS LETTERS[J]. 2013, 第 1 作者  通讯作者  103(7): https://www.webofscience.com/wos/woscc/full-record/WOS:000323769000045.
[31] Yao, Dongning, Zhou, Xilin, Wu, Liangcai, Song, Zhitang, Cheng, Limin, Rao, Feng, Liu, Bo, Feng, Songlin. Investigation on nitrogen-doped Ge2Sb2Te5 material for phase-change memory application. SOLID-STATE ELECTRONICS[J]. 2013, 第 2 作者79: 138-141, http://dx.doi.org/10.1016/j.sse.2012.07.020.
[32] Zhu, Min, Wu, Liangcai, Song, Zhitang, Rao, Feng, Cai, Daolin, Peng, Cheng, Zhou, Xilin, Ren, Kun, Song, Sannian, Liu, Bo, Feng, Songlin. Ti10Sb60Te30 for phase change memory with high-temperature data retention and rapid crystallization speed. APPLIED PHYSICS LETTERS[J]. 2012, 第 7 作者100(12): http://ir.sim.ac.cn/handle/331004/115549.
[33] Wu, Liangcai, Zhu, Min, Song, Zhitang, Lv, Shilong, Zhou, Xilin, Peng, Cheng, Rao, Feng, Song, Sannian, Liu, Bo, Feng, Songlin. Investigation on Sb-rich Sb-Se-Te phase-change material for phase change memory application. JOURNAL OF NON-CRYSTALLINE SOLIDS[J]. 2012, 第 5 作者358(17): 2409-2411, http://dx.doi.org/10.1016/j.jnoncrysol.2011.12.087.
[34] Peng, Cheng, Wu, Liangcai, Rao, Feng, Song, Zhitang, Yang, Pingxiong, Song, Hongjia, Ren, Kun, Zhou, Xilin, Zhu, Min, Liu, Bo, Chu, Junhao. W-Sb-Te phase-change material: A candidate for the trade-off between programming speed and data retention. APPLIED PHYSICS LETTERS[J]. 2012, 第 8 作者101(12): http://ir.sim.ac.cn/handle/331004/115561.
[35] Peng, Cheng, Wu, Liangcai, Rao, Feng, Song, Zhitang, Yang, Pingxiong, Cheng, Limin, Li, Juntao, Zhou, Xilin, Zhu, Min, Liu, Bo, Chu, Junhao. Improved Thermal Stability and Electrical Properties for Al-Sb-Te Based Phase-Change Memory. ECS SOLID STATE LETTERS[J]. 2012, 第 8 作者1(2): P38-P41, https://www.webofscience.com/wos/woscc/full-record/WOS:000318339500014.
[36] ZHANGXu, LIUBo, PENGCheng, RAOFeng, ZHOUXiLin, SONGSanNian, WANGLiangYong, CHENGYan, WULiangCai, YAODongNing, SONGZhiTang, FENGSongLin. Germanium Nitride as a Buffer Layer for Phase Change Memory. Chinese Physics Letters[J]. 2012, 第 5 作者29(10): 107201-107201, https://cpl.iphy.ac.cn/10.1088/0256-307X/29/10/107201.
[37] Zhou, Xilin, Wu, Liangcai, Song, Zhitang, Rao, Feng, Zhu, Min, Peng, Cheng, Yao, Dongning, Song, Sannian, Liu, Bo, Feng, Songlin. Carbon-doped Ge2Sb2Te5 phase change material: A candidate for high-density phase change memory application. APPLIED PHYSICS LETTERS[J]. 2012, 第 1 作者  通讯作者  101(14): http://ir.sim.ac.cn/handle/331004/114745.
[38] Zhou, Xilin, Wu, Liangcai, Song, Zhitang, Rao, Feng, Ren, Kun, Peng, Cheng, Guo, Xiaohui, Liu, Bo, Feng, Songlin. Study on Interface Adhesion between Phase Change Material Film and SiO2 Layer by Nanoscratch Test. JAPANESE JOURNAL OF APPLIED PHYSICS[J]. 2011, 第 1 作者  通讯作者  50(9): http://ir.sim.ac.cn/handle/331004/115523.
[39] Zhou, Xilin, Wu, Liangcai, Song, ZT, Rao, Feng, Ren, Kun, Cheng, Yan, Liu, B, Yao, Dongning, Feng, SL, Chen, Bomy. Investigation on phase change behaviors of Si-Sb-Te alloy: The effect of tellurium segregation. MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS.NEW FUNCTIONAL MATERIALS AND EMERGING DEVICE ARCHITECTURES FOR NONVOLATILE MEMORIES[J]. 2011, 第 1 作者1337: 123-128, http://ir.sim.ac.cn/handle/331004/109159.
[40] Zhou, Xilin, Wu, Liangcai, Song, Zhitang, Rao, Feng, Liu, Bo, Yao, Dongning, Yin, Weijun, Feng, Songlin, Chen, Bomy. Investigation of Sb-rich Si2Sb2+x Te-6 material for phase change random access memory application. APPLIEDPHYSICSAMATERIALSSCIENCEPROCESSING[J]. 2011, 第 1 作者  通讯作者  103(4): 1077-1081, http://ir.sim.ac.cn/handle/331004/115512.
[41] Zhou, Xilin, Wu, Liangcai, Song, Zhitang, Rao, Feng, Ren, Kun, Peng, Cheng, Liu, Bo, Yao, Dongning, Feng, Songlin, Chen, Bomy. Investigation of phase transition behaviors of the nitrogen-doped Sb-rich Si-Sb-Te films for phase-change memory. THIN SOLID FILMS[J]. 2011, 第 1 作者520(3): 1155-1159, http://dx.doi.org/10.1016/j.tsf.2011.08.111.
[42] Zhu, Min, Wu, Liangcai, Rao, Feng, Song, Zhitang, Li, Xuelai, Peng, Cheng, Zhou, Xilin, Ren, Kun, Yao, Dongning, Feng, Songlin. N-doped Sb2Te phase change materials for higher data retention. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2011, 第 7 作者509(41): 10105-10109, http://ir.sim.ac.cn/handle/331004/115528.
[43] Rao, Feng, Song, Zhitang, Ren, Kun, Zhou, Xilin, Cheng, Yan, Wu, Liangcai, Liu, Bo. Si-Sb-Te materials for phase change memory applications. NANOTECHNOLOGY[J]. 2011, 第 4 作者22(14): http://ir.sim.ac.cn/handle/331004/115508.
[44] Zhou, Xilin, Wu, Liangcai, Song, Zhitang, Rao, Feng, Cheng, Yan, Peng, Cheng, Yao, Dongning, Song, Sannian, Liu, Bo, Feng, Songlin, Chen, Bomy. Sb-rich Si-Sb-Te phase change material for multilevel data storage: The degree of disorder in the crystalline state. APPLIED PHYSICS LETTERS[J]. 2011, 第 1 作者  通讯作者  99(3): http://www.irgrid.ac.cn/handle/1471x/390869.
[45] Peng, Cheng, Song, Zhitang, Rao, Feng, Wu, Liangcai, Zhu, Min, Song, Hongjia, Liu, Bo, Zhou, Xilin, Yao, Dongning, Yang, Pingxiong, Chu, Junhao. Al1.3Sb3Te material for phase change memory application. APPLIED PHYSICS LETTERS[J]. 2011, 第 8 作者99(4): http://ir.sim.ac.cn/handle/331004/115518.
[46] Wu, Liangcai, Zhou, Xilin, Song, Zhitang, Zhu, Min, Cheng, Yan, Rao, Feng, Song, Sannian, Liu, Bo, Feng, Songlin. Sb-rich Si-Sb-Te Phase-Change Material for Phase-Change Random Access Memory Applications. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2011, 第 2 作者58(12): 4423-4426, http://ir.sim.ac.cn/handle/331004/115533.
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（ 1 ） Bi2X3基超晶格相变材料与器件及其低功耗高速阈值转变机理, 负责人, 国家任务, 2022-01--2025-12
（ 2 ） 高密度超晶格相变材料与器件及其转变机理研究, 负责人, 地方任务, 2021-10--2023-09
（ 3 ） 超晶格相变存储器原子级界面调控与机理, 负责人, 研究所自主部署, 2021-01--2023-12
（ 4 ） 超晶格相变存储器研究, 负责人, 研究所自主部署, 2020-06--2022-05
（ 5 ） 下一代信息存储技术, 负责人, 国家任务, 2022-01--2024-12

（1）Racetrack memory by design: enhanced current induced domain wall motion through interfacial engineering   2019-09-20
（2）Design of Highly C-Axis Oriented Bismuth Chalcogenides for Strain Engineered Interfacial Phase Change Memory   2017-04-20
（3）Strain Engineered Diffusive Atomic Switching in Chalcogenide Heterostructure Superlattices   2016-03-31
（4）Strained interfacial phase-change memory based on GeTe-SbxTe1-x superlattices   2015-09-06

现指导学生

陈嬗雯  硕士研究生  080903-微电子学与固体电子学  

方文成，博士研究生，080903-微电子学与固体电子学，已毕业

李程兴，博士研究生，080903-微电子学与固体电子学，已毕业

王若冰，博士研究生，080903-微电子学与固体电子学，已毕业

张家睿，硕士研究生，080500-材料科学与工程，已毕业

郑加，博士研究生，080903-微电子学与固体电子学，在读

万子琦，博士研究生，080903-微电子学与固体电子学，在读

陈雨晴，博士研究生，080903-微电子学与固体电子学，在读

邹茜茜，博士研究生，080500-材料科学与工程，在读

刘瑾，硕士研究生，080500-材料科学与工程，在读

王志强，博士研究生，080903-微电子学与固体电子学，在读

周靖博，博士研究生，080903-微电子学与固体电子学，在读

禹宁，博士研究生，080903-微电子学与固体电子学，在读