苗金水,研究员,博士生导师,中组部国家海外高层次青年人才

中国科学院上海技术物理研究所所务委员、所学术委员会委员

红外科学与技术全国重点实验室学术带头人

中国科学院杰出科技成就奖

中国电子学会自然科学一等奖

中国科学院生物交叉领域专家组成员

中国科学院基础研究青年团队负责人

首批国防科技海外人才基金负责人(2020年入选,终评 优秀)

上海科技青年35人

上海市闵行区经济委员会副主任(挂职,2024-2025)

IEEE Open Journal of Nanotechnology 副编辑

电子邮件: jsmiao@mail.sitp.ac.cn

通信地址: 上海市虹口区玉田路500号

邮政编码:200083

研究领域

(1)感存算一体红外光电器件与芯片

(2)红外光电探测器物理

(3)铟砷基短中波红外探测材料、器件及其焦平面

招生信息

欢迎物理、电子科学与技术、材料科学与工程、计算机等专业的本科生、硕士/博士研究生以及博士后加入我们课题组!

招生方向:

(1)红外光电探测器:2-3名研究生、1-2名博士后

  • 红外探测器光电联合调控

  • 范德华异质结红外探测器与集成

(2)人工智能红外视觉芯片:2-3名研究生、1-2名博士后

  • 可重构红外光电探测:红外探测多物理场调控机制,可重构探测器内计算硬件架构与电路。

  • 感存算一体化集成创新范式:感存算一体化硬件堆叠架构及其与人工智能算法相互兼容方案,解决感存算融合芯片关键共性技术问题。

招生专业
080903-微电子学与固体电子学
070205-凝聚态物理

教育背景

2014-08--2018-05   美国密歇根州立大学   电子工程、博士
2011-09--2014-06   中国科学院上海技术物理研究所   凝聚态物理、硕士
2007-09--2011-06   山东大学   应用物理、学士

工作经历

   
工作简历
2020-09~现在, 中国科学院上海技术物理研究所, 研究员
2018-05~2020-07,美国宾夕法尼亚大学, 电子工程、博士后

科研成果

Selected Publications 通讯/一作论文(含共同)


14. Reconfigurable, non-volatile neuromorphic photovoltaics

Nature Nanotechnology, 2023, 18, 1303-1310.

13. Heterojunction tunnel triodes based on two-dimensional metal selenide and three-dimensional silicon

Nature Electronics, 2022, 5, 744-751.

12. Exciton-polariton photodiodes

Nature Communications, 2025, accepted

11. Giant bulk photovoltaic effect in one-dimensional van der Waals grain boundary

Nature Communications, 2024, 15: 501.

10. Bio-inspired Mid-Infrared Neuromorphic Transistors for Dynamic Trajectory Perception using PdSe2/Pentacene Heterostructure

Nature Communications, 2025 accepted

9. Momentum-matching and band-alignment van der Waals heterostructures for high-efficiency infrared photodetection

Science Advances, 2022, 8, eabq1781.

8. Infrared optoelectronics in twisted black phosphorus

Nature Communications, 15, 8834 (2024) 

7. Graphene/MoS2/graphene photo-memristors with tunable non-volatile responsivities for neuromorphic vision processing

Light: Science & Applications, 2023, 12:33. (ESI Highly Cited Paper)

6. Critical band-to-band-tunnelling based optoelectronic memory

Light: Science & Applications, 14, 72 (2025)

5. Gate-Tunable Multi-Junction Competition for Position-Wavelength Fusion Perception

Optica, 2026, accepted

4. Deep multiband photodetection enabled by reconfigurable 2D/3D heterointegration band alignment

Optica, 2024, accepted

3. Engineering optical microcavites in black phosphorus photodiodes: a path to ultrafast polarization-sensitive infrared sensing

Advanced Photonics 2025 accepted

2. Ultrasensitive and Fast Gas Detection Based on Room-Temperature Indium Arsenide Mid-Wavelength Infrared Photodetectors

Advanced Functional Materials 2025

1. Hybrid bacteriorhodopsin/zinc oxide synaptic photoconductors for bio-compatible neuromorphic devices

Advanced Functional Materials, 2023 accepted


Full Publications (含共同)


70. Gate-Tunable Multi-Junction Competition for Position-Wavelength Fusion Perception

Optica, 2026, accepted (通讯)

69. Engineering optical microcavites in black phosphorus photodiodes: a path to ultrafast polarization-sensitive infrared sensing

Advanced Photonics 2025 accepted (通讯)

68. Gate-Tunable Te-WSe2 Heterojunction Diodes for Polarization Detection and Logic Operation Application

Small Methods, 2025 accepted (通讯)

67. Impact of Key Parameters on the Spectral Reconstruction Performance of a Single-Detector Computing Micro-Spectrometer

Advanced Optical Materials, 2025, e01717 (通讯)

66. Bio-inspired Mid-Infrared Neuromorphic Transistors for Dynamic Trajectory Perception using PdSe2/Pentacene Heterostructure

Nature Communications, 2025 accepted (通讯)

65. Self-Powered and Reconfigurable Double-Terminal MoS2 Photodetector for Image Recognition

Nano Letters 2025, 25, 9, 3515–3523 (通讯)

64. Critical band-to-band-tunnelling based optoelectronic memory

Light: Science & Applications 14, 72 (2025) (一作)

63. Ultrasensitive and Fast Gas Detection Based on Room-Temperature Indium Arsenide Mid-Wavelength Infrared Photodetectors

Advanced Functional Materials 2025 (通讯)

62. A universal optoelectronic imaging platform with wafer-scale integration of two-dimensional semiconductors

Chip, 3, 4, 2024 (通讯)

61. Programmable nonlinear optical neuromorphic computing with bare 2D material MoS2

Nature Communications, 15, 10290 (2024)

60. Infrared optoelectronics in twisted black phosphorus

Nature Communications, 15, 8834 (2024) (一作)

59. Recent Advances in the A-Site Cation Engineering of Lead Halide Perovskites

Advanced Optical Materials, 12, 30, 2024 (通讯)

58. Deep multiband photodetection enabled by reconfigurable 2D/3D heterointegration band alignment

Optica, 2024, accepted. (通讯)

57. Horizontally Oriented Growth of Highly Conductive MoO2 Nanobelts on Sapphire

Crystal Growth & Desgin, 2024, accepted. (通讯)

56. High performance low power multilevel oxide based RRAM devices based on TiON/GaO hybrid structure

Applied Physics Letters. 2024 (通讯)

55. In-situ edge extraction enabled by reconfigurable van der Waals infrared photodetectors

Applied Physics Letters. 2024 (通讯)

54. Reconfigurable, non-volatile neuromorphic photovoltaics

Nature Nanotechnology, 2023 accepted. (通讯/一作)

53. Giant bulk photovoltaic effect in one-dimensional van der Waals grain boundary

Nature Communications, 2023, accpeted. (通讯)

52. Van der Waals integration of two-dimensional materials and bulk semiconductors for infrared photodetection technology

MRS Bulletin, 2023 (通讯)

51. Floating gate photo-memory devices based on van der Waals heterostructures for neuromorphic image recognition

Applied Physics Letters, 2023 accepted (通讯)

50. High-performance violet phosphorus photodetectors with van der Waals assisted contacts

SCIENCE CHINA Physics, Mechanics & Astronomy, 2023 accepted (通讯)

49. Hybrid bacteriorhodopsin/zinc oxide synaptic photoconductors for bio-compatible neuromorphic devices

Advanced Functional Materials, 2023 accepted (通讯)

48. Gate-tunable van der Waals photodiodes with an ultrahigh peak-to-valley current ratio

Small, 2023 accepted (通讯)

47. Heterojunction infrared photodiodes with high dynamic range based on lead sulfide quantum dot and zinc oxide nanomembrane

IEEE Transactions on Nanotechnology, 2023 accepted (通讯)

46. Graphene/MoS2/graphene photo-memristors with tunable non-volatile responsivities for neuromorphic vision processing

Light: Science & Applications, 2023 accepted (通讯)

45. Greenhouse gas detection based on infrared nanophotonic devices

IEEE Open Journal of Nanotechnology, 2023 accepted. (通讯)

44. Fast near-infrared photodetectors from p-type SnSe nanoribbons

Nanotechnology 2023, 34 245202 (通讯)

43. Robust and Enhanced Short-Wave Near-Infrared Light Emission in Phosphorene through Photon-Activated Oxidation

ACS Photonics, 2022 accepted (通讯)

42. Geometry-asymmetric photodetectors from metal-semiconductor-metal van der Waals heterostructures

Materials Horizons, 2022 accepted (通讯)

41. Heterojunction tunnel triodes based on two-dimensional metal selenide and three-dimensional silicon

Nature Electronics, 2022 accepted. (通讯/一作)

40. Momentum-matching and band-alignment van der Waals heterostructures for high-efficiency infrared photodetection

Science Advances, 2022 accepted. (通讯)

39. Direct mapping and characterization of the surface local field in InGaAs/InP avalanche photodetectors

Infrared Physics & Technology, 123, 104162 (2022). (通讯)

38. Controllable carrier polarity in 2D HfS2 (1-x) Te2x for short-wave infrared photodiodes

Infrared Physics & Technology, 123, 104139 (2022). (通讯)

37. MoS2 Nanoribbon Transistor for Logic Electronics

IEEE Transactions on Electron Devices, 69 (6), 3433-3438 (2022).

36. Infrared photodetector based on 2D monoclinic gold phosphide nanosheets yielded from one-step chemical vapor transport deposition

Applied Physics Letters, 120 (13), 131104 (2022).

35. Emerging Single‐Photon Detectors Based on Low‐Dimensional Materials

Small, 18 (5), 2103963 (2022). (通讯)

34. High-detectivity tin disulfide nanowire photodetectors with manipulation of localized ferroelectric polarization field

Nanophotonics, 10 (18), 4637-4644 (2021). (通讯)

33. Controllable doping in 2D layered materials

Advanced Materials, 33 (48), 2104942 (2021).

32. Ternary 2D Layered Material FePSe3 and Near‐Infrared Photodetector

Advanced Electronic Materials 7 (8), 2100207 (2021).

31. Anisotropic photoresponse of layered rhenium disulfide synaptic transistors

Chinese Physics B 30 (8), 088503 (2021). (通讯)

30. Recent progress on electrical and optical manipulations of perovskite photodetectors

Advanced Science, 8 (14), 2100569 (2021).

29. Narrowing Bandgap of HfS2 by Te Substitution for Short‐Wavelength Infrared Photodetection

Advanced Optical Materials, 9 (11), 2002248 (2021). (通讯)

28. Recent progress and challenges on two-dimensional material photodetectors from the perspective of advanced characterization technologies

Nano Research, 14 (6), 1840-1862 (2021).

27. Avalanche photodetectors based on two-dimensional layered materials

Nano Research, 14 (6), 1878-1888 (2021). (通讯)

26. Unipolar barrier photodetectors based on van der Waals heterostructures

Nature Electronics, 4 (5), 357-363 (2021).

25. Post-CMOS compatible aluminum scandium nitride/2D channel ferroelectric field-effect-transistor memory

Nano Letters, 21 (9), 3753-3761 (2021).

24. Blackbody-sensitive room-temperature infrared photodetectors based on low-dimensional tellurium grown by chemical vapor deposition

Science Advances, 7 (16), eabf7358 (2021).

23. Direct optoelectronic imaging of 2D semiconductor–3D metal buried interfaces

ACS Nano, 15 (3), 5618-5630 (2021).

22. Giant gate-tunability of complex refractive index in semiconducting carbon nanotubes

ACS Photonics, 7 (10), 2896-2905 (2020).

21. Hybrid exciton-plasmon-polaritons in van der Waals semiconductor gratings

Nature Communications, 11 (1), 1-9 (2020).

20. Gate-tunable semiconductor heterojunctions from 2D/3D van der Waals interfaces

Nano Letters, 20 (4), 2907-2915 (2020). (一作)

19. High efficiency and fast van der Waals hetero-photodiodes with a unilateral depletion region

Nature Communications, 10 (1), 1-8 (2019).

18. Screen‐printed soft capacitive sensors for spatial mapping of both positive and negative pressures

Advanced Functional Materials, 29 (23), 1809116 (2019).

17. Black phosphorus electronic and optoelectronic devices

2D Materials, 6 (3), 032003 (2019). (通讯)

16. Fully printed flexible dual-gate carbon nanotube thin-film transistors with tunable ambipolar characteristics for complementary logic circuits

ACS Nano, 12 (11), 11572-11578 (2018).

15. Direct printing for additive patterning of silver nanowires for stretchable sensor and display applications

Advanced Materials Technologies, 3 (2), 1700232 (2018).

14. Single pixel black phosphorus photodetector for near‐infrared imaging

Small, 14 (2), 1702082 (2018). (一作)

13. Vertically stacked and self-encapsulated van der Waals heterojunction diodes using two-dimensional layered semiconductors

ACS Nano, 11 (10), 10472-10479 (2017). (一作)

12. Fully Printed Silver‐Nanoparticle‐Based Strain Gauges with Record High Sensitivity

Advanced Electronic Materials, 3 (7), 1700067 (2017).

11. Fully printed flexible carbon nanotube photodetectors

Applied Physics Letters, 110 (12), 123105 (2017).

10. Photothermal Effect Induced Negative Photoconductivity and High Responsivity in Flexible Black Phosphorus Transistors

ACS Nano, 11 (6), 6048–6056 (2017). (一作)

9. Air-Stable Humidity Sensor Using Few-Layer Black Phosphorus

ACS Applied Materials & Interfaces, 9, 10019-10026 (2017). (一作)

8. Fully printed stretchable thin-film transistors and integrated logic circuits

ACS Nano, 10 (12), 11459-11468 (2016).

7. Black Phosphorus Schottky Diodes: Channel Length Scaling and Application as Photodetectors

Advanced Electronic Materials, 2, 1500346 (2016). (一作)

6. Ultrashort channel length black phosphorus field-effect transistors

ACS Nano, 9 (9), 9236-9243 (2015). (一作)

5. Fully printed foldable integrated logic gates with tunable performance using semiconducting carbon nanotubes

Advanced Functional Materials 25 (35), 5698-5705 (2015).

4. Surface Plasmon‐Enhanced Photodetection in Few Layer MoS2 Phototransistors with Au Nanostructure Arrays

Small, 11 (20), 2392-2398 (2015). (一作)

3. High‐responsivity graphene/InAs nanowire heterojunction near‐infrared photodetectors with distinct photocurrent on/off ratios

Small, 11 (8), 936-942 (2015). (一作)

2. Anomalous and highly efficient InAs nanowire phototransistors based on majority carrier transport at room temperature

Advanced Materials, 26 (48), 8203-8209 (2014).

1. Single InAs nanowire room-temperature near-infrared photodetectors

ACS Nano, 8 (4), 3628-3635 (2014). (一作)

指导学生

已指导学生

郝春慧  硕士研究生  085400-电子信息  

王昊  博士研究生  080903-微电子学与固体电子学  

现指导学生

李雨桐  硕士研究生  085400-电子信息  

孙聚一  硕士研究生  085400-电子信息  

林宏忆  硕士研究生  085400-电子信息  

徐敏霞  硕士研究生  085400-电子信息  

王金津  博士研究生  080903-微电子学与固体电子学  

董祎  硕士研究生  080903-微电子学与固体电子学  

李唐鑫  博士研究生  080903-微电子学与固体电子学  

佘宜洪  博士研究生  080903-微电子学与固体电子学  

方悦悦  硕士研究生  080903-微电子学与固体电子学  

蒋羽  硕士研究生  080903-微电子学与固体电子学  

张吉悦  硕士研究生  085408-光电信息工程  

郭恒睿  硕士研究生  085408-光电信息工程  

石祥阳  硕士研究生  085408-光电信息工程  

赵莹滢  硕士研究生  080902-电路与系统